Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FCD620N60ZF | - - - | ![]() | 4587 | 0.00000000 | Fairchild Semiconductor | Hiperfet ™, polar ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 600 V | 7.3a (TC) | 10V | 620mohm @ 3,6a, 10 V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1135 PF @ 25 V. | - - - | 89W (TC) | ||||||||||||||||||||||||||||
![]() | FJX4006RTF | 0,0300 | ![]() | 93 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | FJX400 | 200 MW | SC-70 (SOT323) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 10 Kohms | 47 Kohms | ||||||||||||||||||||||||||
![]() | Fqu10n20TU | 0,4600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 200 v | 7.6a (TC) | 10V | 360 MOHM @ 3,8a, 10V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 670 PF @ 25 V. | - - - | 2,5 W (TA), 51W (TC) | ||||||||||||||||||||||||||
![]() | FDMS7696a | 0,1500 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS7696 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | |||||||||||||||||||||||||||||||||||||
![]() | FLZ22VC | 0,0200 | ![]() | 47 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 17 v | 21.7 v | 25,6 Ohm | ||||||||||||||||||||||||||||||||
![]() | 1n5227b | 0,0300 | ![]() | 247 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 175 ° C (TJ) | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,5 V @ 200 Ma | 15 µa @ 1 V | 3.6 V | 24 Ohm | |||||||||||||||||||||||||||||||||
![]() | IRLS620A | 0,1900 | ![]() | 9510 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1.494 | N-Kanal | 200 v | 4.1a (TC) | 5v | 800mohm @ 2.05a, 5V | 2v @ 250 ähm | 15 NC @ 5 V | ± 20 V | 430 PF @ 25 V. | - - - | 26W (TC) | ||||||||||||||||||||||||
![]() | FDMC0205 | 0,1900 | ![]() | 188 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMC02 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | |||||||||||||||||||||||||||||||||||||
![]() | HUF76145S3 | - - - | ![]() | 8130 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 4,5 MOHM @ 75A, 10V | 3v @ 250 ähm | 156 NC @ 10 V | ± 20 V | 4900 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||||||||||||||
![]() | BZX55C30 | 0,0500 | ![]() | 62 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 7% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 22 v | 30 v | 80 Ohm | ||||||||||||||||||||||||||||||||
![]() | MMBZ5231B_S00Z | 1.0000 | ![]() | 8874 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | ||||||||||||||||||||||||||||||||||||||||
FDW2511NZ | 0,3600 | ![]() | 348 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1.6W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 7.1a | 20mohm @ 7.1a, 4,5 V. | 1,5 V @ 250 ähm | 17.3nc @ 4,5V | 1000pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||
![]() | BC850AMTF | 0,0200 | ![]() | 121 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC850 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||
![]() | BZX79C5V6-T50A | 0,0200 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,5 V @ 100 mA | 1 µa @ 2 V. | 5.6 v | 40 Ohm | |||||||||||||||||||||||||||||||||
![]() | FDMC8884-FS | - - - | ![]() | 5564 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | N-Kanal | 30 v | 9A (TA), 15a (TC) | 19Mohm @ 9a, 10V | 2,5 V @ 250 ähm | 14 NC @ 10 V | ± 20 V | 685 PF @ 15 V | - - - | 2,3 W (TA), 18W (TC) | |||||||||||||||||||||||||
![]() | S2m | - - - | ![]() | 4700 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | Do-214aa, SMB | S2m | Standard | Do-214AA (SMB) | Herunterladen | Ear99 | 8541.10.0080 | 1 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 1000 v | 1,15 V @ 2 a | 1,5 µs | 1 µA @ 1000 V | -50 ° C ~ 150 ° C. | 2a | 30pf @ 4v, 1 MHz | ||||||||||||||||||||||||||||||
![]() | BDW93C | 1.0000 | ![]() | 3705 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 100 v | 12 a | 1ma | NPN - Darlington | 3v @ 100 mA, 10a | 750 @ 5a, 3v | - - - | |||||||||||||||||||||||||||||||
![]() | FDMT800152DC | 3.3400 | ![]() | 7916 | 0.00000000 | Fairchild Semiconductor | Dual Cool ™, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | 8-Dual Cool ™ 88 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 13a (ta), 72a (TC) | 6 V, 10V | 9mohm @ 13a, 10V | 4v @ 250 ähm | 83 NC @ 10 V | ± 20 V | 5875 PF @ 75 V | - - - | 3.2W (TA), 113W (TC) | |||||||||||||||||||||||||||
![]() | KSH29CTF | - - - | ![]() | 2532 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH29 | 1,56 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 1 a | 50 µA | Npn | 700 MV @ 125 Ma, 1a | 15 @ 1a, 4V | 3MHz | |||||||||||||||||||||||||||
![]() | BC857BMTF | 0,0200 | ![]() | 6711 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC857 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 10,592 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||||||
![]() | FQB12N60TM | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 217 | N-Kanal | 600 V | 10.5a (TC) | 10V | 700MOHM @ 5.3A, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 3.13W (TA), 180 W (TC) | ||||||||||||||||||||||||
![]() | 1N4744A-T50R | 0,0500 | ![]() | 13 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4744 | 1 w | Do-41 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 5 µa @ 11,4 V | 15 v | 14 Ohm | ||||||||||||||||||||||||||||||
![]() | FLZ33VB | 0,0200 | ![]() | 68 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 25 v | 31.1 v | 55 Ohm | ||||||||||||||||||||||||||||||||
![]() | BZX55C15 | 0,0600 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 1.000 | 1,3 V @ 100 mA | 100 na @ 11 v | 15 v | 30 Ohm | ||||||||||||||||||||||||||||||||
![]() | FJC2383YTF | 1.0000 | ![]() | 8581 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 160 v | 1 a | 1 µA (ICBO) | Npn | 1,5 V @ 50 Ma, 500 mA | 160 @ 200 Ma, 5V | 100 MHz | ||||||||||||||||||||||||||||||
![]() | HUF75333S3 | 0,6200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 66a (TC) | 10V | 16mohm @ 66a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||
![]() | 1N756a | 1.9200 | ![]() | 141 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 156 | 1,5 V @ 200 Ma | 100 na @ 1 v | 8.2 v | 8 Ohm | ||||||||||||||||||||||||||||||||
![]() | KSB1116SYTA | 0,0500 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | ||||||||||||||||||||||||||||||
![]() | BCX19 | 0,0500 | ![]() | 161 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX19 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.800 | 45 V | 500 mA | 100NA (ICBO) | Npn | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||
![]() | FLZ30VC | 0,0200 | ![]() | 4458 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 4,045 | 1,2 V @ 200 Ma | 133 na @ 23 v | 29.1 v | 46 Ohm |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus