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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Diodenkonfiguration | Spannung - DC Reverse (VR) (max) | Strom - Dieschnittlich Behaben (IO) (Pro -Diode) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FQP6N50C | 0,7500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 5.5a (TC) | 10V | 1,2OHM @ 2,8a, 10 V. | 4v @ 250 ähm | 25 NC @ 10 V | ± 30 v | 700 PF @ 25 V. | - - - | 98W (TC) | ||||||||||||||||||||||||||||||||||
![]() | FCPF380N65FL1 | - - - | ![]() | 6833 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 10.2a (TC) | 10V | 380MOHM @ 5.1a, 10V | 5v @ 1ma | 43 NC @ 10 V | ± 20 V | 1680 PF @ 100 V | - - - | 33W (TC) | |||||||||||||||||||||||||||||||||||
![]() | KSD1417TU | - - - | ![]() | 3788 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | K. Loch | To-220-3 Full Pack | 2 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 60 v | 7 a | 100 µA (ICBO) | NPN - Darlington | 2v @ 14ma, 7a | 2000 @ 3a, 3v | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | MBR3045stg | 0,8600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | SwitchMode ™ | Rohr | Veraltet | K. Loch | To-220-3 | MBR3045 | Schottky | To-220ab | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 45 V | 15a | 620 mv @ 15 a | 200 µA @ 45 V | -65 ° C ~ 175 ° C. | ||||||||||||||||||||||||||||||||||||||
![]() | FDG311N | 0,1900 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metalloxid) | SC-88 (SC-70-6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 20 v | 1,9a (ta) | 2,5 V, 4,5 V. | 115mohm @ 1,9a, 4,5 V. | 1,5 V @ 250 ähm | 4,5 NC @ 4,5 V. | ± 8 v | 270 PF @ 10 V. | - - - | 750 MW (TA) | |||||||||||||||||||||||||||||||||||
![]() | MMBD1504 | 0,0900 | ![]() | 37 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Standard | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0070 | 3.000 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 1 Paar Gemeinsamer Kathode | 200 v | 200 ma | 1,1 V @ 200 Ma | 10 na @ 180 v | 150 ° C (max) | |||||||||||||||||||||||||||||||||||||||
![]() | TIP31C | 0,3700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 | 40 w | To-220 | - - - | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-tip31c-600039 | 873 | 100 v | 3 a | 200 µA | Npn | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | ||||||||||||||||||||||||||||||||||||||
![]() | FFA05U120DNTU | 2.4000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | TO-3P-3, SC-65-3 | Standard | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 30 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Gemeinsamer Kathode | 1200 V | 5a | 3,5 V @ 5 a | 100 ns | 5 µa @ 1200 V | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||
![]() | SSU1N50BTU | 0,3500 | ![]() | 55 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | SSU1N50 | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 520 v | 1.3a (TC) | 10V | 5.3OHM @ 650 mA, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 340 PF @ 25 V. | - - - | 2,5 W (TA), 26W (TC) | |||||||||||||||||||||||||||||||
![]() | BAV21-T50R | 0,0200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-204AH, Do-35, axial | Standard | Do-35 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-BAV21-T50R-600039 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 250 V | 1,25 V @ 200 Ma | 50 ns | 100 Na @ 200 V. | 175 ° C (max) | 200 ma | 5PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
![]() | Fjv4113rmtf | - - - | ![]() | 4762 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV411 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 2.2 Kohms | 47 Kohms | ||||||||||||||||||||||||||||||||||
![]() | BZX84C6v2 | - - - | ![]() | 1299 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 6% | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 250 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-BZX84C6V2-600039 | 1 | 900 mv @ 10 mA | 3 µa @ 4 V. | 6.2 v | 6 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | FDZ595PZ | - - - | ![]() | 2593 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | 250 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFD08S60S-F085 | - - - | ![]() | 2501 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Stealth ™ II | Schüttgut | Aktiv | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Standard | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 600 V | 2,6 V @ 8 a | 30 ns | 100 µA @ 600 V | -65 ° C ~ 150 ° C. | 8a | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | 1n3070 | 6.2400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204AH, Do-35, axial | Standard | DO-35 (Do-204AH) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.10.0070 | 49 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1 V @ 100 mA | 50 ns | 100 na @ 175 V | 175 ° C (max) | 500 mA | 5PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||
![]() | BD241BTU | 0,2500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 40 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 80 v | 3 a | 300 µA | Npn | 1,2 V @ 600 Ma, 3a | 25 @ 1a, 4V | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | MMBD1401A | 0,0300 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Standard | SOT-23-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 175 v | 1 V @ 200 Ma | 50 ns | 100 na @ 175 V | 150 ° C (max) | 200 ma | 2PF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||||||
![]() | FDMS7696a | 0,1500 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS7696 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FLZ22VC | 0,0200 | ![]() | 47 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | ± 3% | -65 ° C ~ 175 ° C. | Oberflächenhalterung | Do-213AC, Mini-Melf, SOD-80 | 500 MW | SOD-80 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0050 | 2.500 | 1,2 V @ 200 Ma | 133 na @ 17 v | 21.7 v | 25,6 Ohm | ||||||||||||||||||||||||||||||||||||||||
![]() | 1N5243BTR | 0,0200 | ![]() | 170 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 500 NA @ 9.9 V. | 13 v | 13 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | BAV99WT1G | 1.0000 | ![]() | 3243 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | BAV99 | Standard | SC-70-3 (SOT323) | Herunterladen | Ear99 | 8541.10.0070 | 1 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 1 Paar Serie Verbindung | 100 v | 215 Ma (DC) | 1,25 V @ 150 mA | 6 ns | 2,5 µa @ 70 V | -65 ° C ~ 150 ° C. | ||||||||||||||||||||||||||||||||||||||
![]() | Mm3z3v9c | 1.0000 | ![]() | 5882 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 150 ° C. | Oberflächenhalterung | SC-90, SOD-323F | 200 MW | SOD-323F | Herunterladen | Ear99 | 8541.10.0050 | 1 | 1 V @ 10 mA | 2,7 µa @ 1 V | 3,9 v | 84 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | MMBTA05 | - - - | ![]() | 5097 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBTA05 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0075 | 3.000 | 60 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||||||
FDW2506P | 0,6400 | ![]() | 180 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 600 MW | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 20V | 5.3a | 22mohm @ 5,3a, 4,5 V. | 1,5 V @ 250 ähm | 34nc @ 4,5V | 1015PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||||||||
![]() | 1N4744A-T50A | - - - | ![]() | 6004 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-1n4744a-T50A-600039 | 1 | 5 µa @ 11,4 V | 15 v | 14 Ohm | |||||||||||||||||||||||||||||||||||||||||
![]() | 2N5401_D28Z | 1.0000 | ![]() | 2181 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | Nicht Anwendbar | Ear99 | 8541.21.0075 | 2.000 | 150 v | 600 mA | 50na (ICBO) | PNP | 500mv @ 5ma, 50 mA | 60 @ 10ma, 5V | 400 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | KSP24TA | 0,0200 | ![]() | 9807 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 135 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.407 | 30 v | 100 ma | 50na (ICBO) | Npn | - - - | 30 @ 8ma, 10V | 620 MHz | ||||||||||||||||||||||||||||||||||||||
![]() | 2SA1699E-PM-AA | 0,5300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156-2SA1699E-PM-AA-600039 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFB3904 | 0,0800 | ![]() | 423 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | Ffb39 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 40V | 200 ma | - - - | 2 NPN (Dual) | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||||||||||||||||||
![]() | FMG1G75US60H | 39.0100 | ![]() | 80 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr-Ga | 310 w | Standard | 19 Uhr-Ga | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 15 | Einzel | - - - | 600 V | 75 a | 2,8 V @ 15V, 75a | 250 µA | NEIN | 7.056 NF @ 30 V |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus