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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - vorwärts (vf) (max) @ if | Strom - reverse -lockage @ vr | Strom - Dassche Anitt Buhben (IO) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 2N4402TFR | 0,0200 | ![]() | 6833 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.166 | 40 v | 600 mA | - - - | PNP | 750 MV @ 50 Ma, 500 mA | 50 @ 150 mA, 2V | - - - | ||||||||||||||||||||||||||||||||||
![]() | Fqd4p25tf | - - - | ![]() | 3345 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 250 V | 3.1a (TC) | 10V | 2,1OHM @ 1,55A, 10V | 5 V @ 250 ähm | 14 NC @ 10 V | ± 30 v | 420 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||||||||||||||
![]() | BC559CTA | - - - | ![]() | 8389 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | |||||||||||||||||||||||||||||||||||
![]() | FDS6630A | 0,2600 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 6,5a (ta) | 4,5 V, 10 V. | 38mohm @ 6.5a, 10V | 3v @ 250 ähm | 7 NC @ 5 V | ± 20 V | 460 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||
![]() | GBPC12005W | 0,8800 | ![]() | 1110 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | 4 Quadratmeter, gbpc-w | Standard | Gbpc-w | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 32 | 1,1 V @ 6 a | 5 µa @ 50 V | 12 a | Einphase | 50 v | ||||||||||||||||||||||||||||||||||||
![]() | Fjy3002r | 0,0300 | ![]() | 682 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 10 Kohms | 10 Kohms | ||||||||||||||||||||||||||||||
![]() | MMBT5088 | - - - | ![]() | 3594 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 30 v | 100 ma | 50na (ICBO) | Npn | 500mv @ 1ma, 10 mA | 350 @ 1ma, 5V | 50 MHz | ||||||||||||||||||||||||||||||||
![]() | FDD5N50TF | 0,2900 | ![]() | 1986 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 100 | N-Kanal | 500 V | 4a (TC) | 10V | 1,4ohm @ 2a, 10 V. | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 640 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||||||||||||
![]() | TIP31B | 0,1500 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | TIP31 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 80 v | 3 a | 300 µA | Npn | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||||||||||
![]() | 1N4731atr | 0,0300 | ![]() | 249 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1N4731 | 1 w | Do-41 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 3.000 | 10 µa @ 1 V | 4.3 v | 9 Ohm | ||||||||||||||||||||||||||||||||||
![]() | KSB1116SYBU | 0,0500 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | ||||||||||||||||||||||||||||||||||
![]() | ISL9N315AD3ST | 0,3600 | ![]() | 71 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 15mohm @ 30a, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 20 V | 900 PF @ 15 V | - - - | 55W (TA) | ||||||||||||||||||||||||||||
![]() | FDS6670A | 0,3900 | ![]() | 110 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 779 | N-Kanal | 30 v | 13a (ta) | 4,5 V, 10 V. | 8mohm @ 13a, 10V | 3v @ 250 ähm | 30 NC @ 5 V | ± 20 V | 2220 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||||||
![]() | MMBZ5252B | 0,0200 | ![]() | 149 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBZ52 | 300 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 659 | 900 mv @ 10 mA | 100 Na @ 18 V. | 24 v | 33 Ohm | |||||||||||||||||||||||||||||||||
![]() | MPSA28 | 0,0700 | ![]() | 9106 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1,198 | 80 v | 500 mA | 500NA | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 200 MHz | ||||||||||||||||||||||||||||||||||
![]() | KSD882YS | - - - | ![]() | 3614 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1 w | To-126-3 | Herunterladen | Ear99 | 8542.39.0001 | 769 | 30 v | 3 a | 1 µA (ICBO) | Npn | 500mv @ 200 Ma, 2a | 160 @ 1a, 2v | 90 MHz | |||||||||||||||||||||||||||||||||||
![]() | FQD19N10LTF | 0,3400 | ![]() | 3288 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5 | N-Kanal | 100 v | 15,6a (TC) | 5v, 10V | 100MOHM @ 7.8a, 10V | 2v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 870 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||||||||||||||||||
![]() | PN3638 | 0,0200 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | PN36 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 17.374 | 25 v | 800 mA | 35na | PNP | 1v @ 30 mA, 300 mA | 30 @ 300 mA, 2V | - - - | |||||||||||||||||||||||||||||||
![]() | 1N4735a | 0,0800 | ![]() | 93 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204Al, Do-41, axial | 1 w | Do-41 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 3845-1n4735a | Ear99 | 1 | 10 µa @ 3 V | 6.2 v | 2 Ohm | |||||||||||||||||||||||||||||||||||
![]() | FDD6N50TM | - - - | ![]() | 3527 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 6a (TC) | 10V | 900mohm @ 3a, 10V | 5 V @ 250 ähm | 16.6 NC @ 10 V. | ± 30 v | 9400 PF @ 25 V. | - - - | 89W (TC) | |||||||||||||||||||||||||||||||
![]() | HN1B01FDW1T1G | 0,0400 | ![]() | 48 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-74, SOT-457 | HN1B01 | 380 MW | SC-74 | Herunterladen | Ear99 | 8541.21.0095 | 7.474 | 50V | 200 ma | 2 µA | NPN, PNP | 250mv @ 10 mA, 100 mA / 300 mv @ 10 mA, 100 mA | 200 @ 2ma, 6v | - - - | ||||||||||||||||||||||||||||||||||
![]() | Fqpf6n60 | 0,9400 | ![]() | 887 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 3.6a (TC) | 10V | 1,5OHM @ 1,8a, 10V | 5 V @ 250 ähm | 25 NC @ 10 V | ± 30 v | 1000 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||||||||||||||||||||
![]() | KSE700stu | - - - | ![]() | 3558 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 40 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1,209 | 60 v | 4 a | 100 µA | PNP - Darlington | 2,5 V @ 30 Ma, 1,5a | 750 @ 1,5a, 3V | - - - | ||||||||||||||||||||||||||||||||||
![]() | Mmbth34 | 0,1900 | ![]() | 51 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | - - - | 40V | 50 ma | Npn | 15 @ 20 mA, 2V | 500 MHz | - - - | ||||||||||||||||||||||||||||||||||
![]() | Fdd6n25tm | 0,2800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | Ear99 | 8542.39.0001 | 1.086 | N-Kanal | 250 V | 4.4a (TC) | 10V | 1,1OHM @ 2,2a, 10 V. | 5 V @ 250 ähm | 6 nc @ 10 v | ± 30 v | 250 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||||||||||
![]() | FDMS4435BZ | 0,5600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 532 | P-Kanal | 30 v | 9a (ta), 18a (TC) | 4,5 V, 10 V. | 20mohm @ 9a, 10V | 3v @ 250 ähm | 47 NC @ 10 V | ± 25 V | 2050 PF @ 15 V | - - - | 2,5 W (TA), 39 W (TC) | |||||||||||||||||||||||||||||||
![]() | FDU6512a | 0,7800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 386 | N-Kanal | 20 v | 10.7a (TA), 36a (TC) | 2,5 V, 4,5 V. | 21mohm @ 10.7a, 4,5 V. | 1,5 V @ 250 ähm | 19 NC @ 4,5 V. | ± 12 V | 1082 PF @ 10 V | - - - | 3,8 W (TA), 43W (TC) | ||||||||||||||||||||||||||||||
![]() | FNB81560T3 | 11.8900 | ![]() | 720 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 8 | Schüttgut | Aktiv | K. Loch | 25-Powerdip-Modul (0,815 ", 20,70 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase Wechselrichter | 15 a | 600 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||
![]() | HUFA76419S3ST | - - - | ![]() | 1642 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 700 | N-Kanal | 60 v | 29a (TC) | 4,5 V, 10 V. | 35mohm @ 29a, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 16 v | 900 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||||||||||||||||||||
![]() | HUF75345p3_NS2552 | 1.0000 | ![]() | 4961 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 |
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