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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Diodentyp | Spannung - Peak Reverse (max) | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 3n248 | - - - | ![]() | 2326 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 165 ° C (TJ) | K. Loch | 4-sip, kbpm | Standard | Kbpm | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 1 | 1 V @ 1 a | 5 µa @ 200 V. | 1,5 a | Einphase | 200 v | ||||||||||||||||||||||||||||||||||||||
![]() | KSH2955TF | 0,1900 | ![]() | 83 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | D-Pak | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-KSH2955TF-600039 | 1 | 60 v | 10 a | 50 µA | PNP | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||||||||||||||
![]() | KSH2955TF-FS | - - - | ![]() | 4129 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | D-Pak | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 60 v | 10 a | 50 µA | PNP | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||||||||||||
![]() | KSC2688YSTU | 0,1900 | ![]() | 156 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,25 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 60 | 300 V | 200 ma | 100 µA (ICBO) | Npn | 1,5 V @ 5ma, 50 mA | 100 @ 10 mA, 10 V. | 80MHz | ||||||||||||||||||||||||||||||||||||
![]() | KSA1298OMTF | 0,0200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 25 v | 800 mA | 100NA (ICBO) | PNP | 400 mv @ 20 mA, 500 mA | 100 @ 100 mA, 1V | 120 MHz | ||||||||||||||||||||||||||||||||||||
![]() | FDB5690 | 1.6000 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 32a (TC) | 6 V, 10V | 27mohm @ 16a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1120 PF @ 25 V. | - - - | 58W (TC) | ||||||||||||||||||||||||||||||||
![]() | FDMA8884 | 1.0000 | ![]() | 6776 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 6,5a (TA), 8a (TC) | 4,5 V, 10 V. | 23mohm @ 6.5a, 10V | 3v @ 250 ähm | 7,5 NC @ 10 V | ± 20 V | 450 PF @ 15 V | - - - | 1,9W (TA) | |||||||||||||||||||||||||||||||||
![]() | FCP190N65F | - - - | ![]() | 2948 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | FCP190 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 20,6a (TC) | 10V | 190mohm @ 10a, 10V | 5v @ 2MA | 78 NC @ 10 V | ± 20 V | 3225 PF @ 25 V. | - - - | 208W (TC) | ||||||||||||||||||||||||||||||||
![]() | FDI040N06 | 1.7200 | ![]() | 252 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 120a (TC) | 10V | 4mohm @ 75a, 10V | 4,5 V @ 250 ähm | 133 NC @ 10 V | ± 20 V | 8235 PF @ 25 V. | - - - | 231W (TC) | ||||||||||||||||||||||||||||||||
![]() | 2N7002va | 0,2800 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | 2N7002 | MOSFET (Metalloxid) | 250 MW | SOT-563F | Herunterladen | Ear99 | 8541.21.0095 | 1.078 | 2 n-kanal (dual) | 60 v | 280 Ma | 7.5OHM @ 50 Ma, 5V | 2,5 V @ 250 ähm | - - - | 50pf @ 25v | Logikpegel -tor | ||||||||||||||||||||||||||||||||||
![]() | FDP023N08B-F102 | - - - | ![]() | 3201 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | - - - | 2156-FDP023N08B-F102 | 1 | N-Kanal | 75 V | 120a (TC) | 10V | 2,35 MOHM @ 75A, 10V | 3,8 V @ 250 ähm | 195 NC @ 10 V. | ± 20 V | 13765 PF @ 37,5 V. | - - - | 245W (TC) | ||||||||||||||||||||||||||||||||||
![]() | SS9015DBU | 0,0200 | ![]() | 779 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1 | 45 V | 100 ma | 50na (ICBO) | PNP | 700 mv @ 5ma, 100 mA | 400 @ 1ma, 5v | 190 MHz | ||||||||||||||||||||||||||||||||||
![]() | KSA642GBU | 0,0200 | ![]() | 6342 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.726 | 25 v | 300 ma | 100NA (ICBO) | PNP | 600mv @ 30 mA, 300 mA | 200 @ 50 Ma, 1V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | FPF2C8P2NL07A | 81.4200 | ![]() | 131 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | F2 -Modul | 135 w | Standard | F2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | DRIPHASE | Feldstopp | 650 V | 30 a | 2,2 V @ 15V, 30a | 250 µA | Ja | ||||||||||||||||||||||||||||||||||||
![]() | D44H11 | - - - | ![]() | 6175 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0075 | 50 | 80 v | 10 a | 10 µA | Npn | 1v @ 400 mA, 8a | 60 @ 2a, 1V | 50 MHz | ||||||||||||||||||||||||||||||||||||
![]() | TN5415a | 0,0500 | ![]() | 1778 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.456 | 200 v | 100 ma | 50 µA | PNP | 2,5 V @ 5 mA, 50 mA | 30 @ 50 Ma, 10 V | - - - | ||||||||||||||||||||||||||||||||||||
![]() | BC850BMTF | 0,0600 | ![]() | 102 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||||||||||||
![]() | FFSH2065A | - - - | ![]() | 9891 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-247-2 | SIC (Silicon Carbide) Schottky | To-247-2 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FFSH2065A-600039 | 1 | Keine Erholungszeit> 500 mA (IO) | 650 V | 1,75 V @ 20 a | 0 ns | 200 µA @ 650 V | -55 ° C ~ 175 ° C. | 25a | 1085PF @ 1V, 100 kHz | ||||||||||||||||||||||||||||||||||||
![]() | Fqpf13n50t | - - - | ![]() | 1468 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 12,5a (TC) | 10V | 430mohm @ 6.25a, 10V | 5 V @ 250 ähm | 60 nc @ 10 v | ± 30 v | 2300 PF @ 25 V. | - - - | 56W (TC) | ||||||||||||||||||||||||||||||||
![]() | FCH170N60 | 3.1900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 102 | N-Kanal | 600 V | 22a (TC) | 10V | 170Mohm @ 11a, 10V | 3,5 V @ 250 ähm | 55 NC @ 10 V | ± 20 V | 2860 PF @ 380 V | - - - | 227W (TC) | |||||||||||||||||||||||||||||||||
![]() | Fdd6682_nl | 0,9600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75A (TA) | 4,5 V, 10 V. | 6,2 Mohm @ 17a, 10V | 3v @ 250 ähm | 31 NC @ 5 V. | ± 20 V | 2400 PF @ 15 V | - - - | 1.6W (TA) | ||||||||||||||||||||||||||||||
![]() | FDC655an | 1.7900 | ![]() | 299 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | N-Kanal | 30 v | 6.3a (ta) | 4,5 V, 10 V. | 27mohm @ 6.3a, 10V | 3v @ 250 ähm | 13 NC @ 5 V | ± 20 V | 830 PF @ 15 V | - - - | 1.6W (TA) | ||||||||||||||||||||||||||||||||
![]() | KSC2756RMTF | 0,0200 | ![]() | 7282 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 150 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.740 | 15 dB ~ 23 dB | 20V | 30 ma | Npn | 60 @ 5ma, 10V | 850 MHz | 6,5 dB bei 200 MHz | ||||||||||||||||||||||||||||||||||||
![]() | MMBF4091 | - - - | ![]() | 3799 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-MMBF4091-600039 | Ear99 | 8541.21.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FCP25N60N-F102 | 3.0600 | ![]() | 581 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 25a (TC) | 10V | 125mohm @ 12.5a, 10V | 4v @ 250 ähm | 74 NC @ 10 V | ± 30 v | 3352 PF @ 100 V | - - - | 216W (TC) | |||||||||||||||||||||||||||||||||
![]() | Fqpf3n50c | 0,7000 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 3a (TC) | 10V | 2,5 Ohm bei 1,5a, 10 V | 4v @ 250 ähm | 13 NC @ 10 V | ± 30 v | 365 PF @ 25 V. | - - - | 25W (TC) | ||||||||||||||||||||||||||||||||
![]() | FQP11N40 | 0,8300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 11.4a (TC) | 10V | 480MOHM @ 5.7a, 10V | 5 V @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1400 PF @ 25 V. | - - - | 147W (TC) | ||||||||||||||||||||||||||||||||
![]() | FQI5N15TU | 0,4100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 150 v | 5.4a (TC) | 10V | 800 MOHM @ 2,7A, 10V | 4v @ 250 ähm | 7 NC @ 10 V | ± 25 V | 230 PF @ 25 V. | - - - | 3,75W (TA), 54W (TC) | ||||||||||||||||||||||||||||||||
![]() | Fjy4013r | 0,0200 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy401 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 2.2 Kohms | 47 Kohms | ||||||||||||||||||||||||||||||||||
![]() | MPSH17 | 0,0600 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MPSH17 | 350 MW | To-92-3 | Herunterladen | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.000 | 24 dB | 15 v | - - - | Npn | 25 @ 5ma, 10V | 800 MHz | 6db @ 200MHz |
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