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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Toleranz | Spannung - Bewort | Biebstemperatur | Montagetyp | Paket / Herbst | Typ | Grundproduktnummer | Eingabetyp | Frequenz | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | Geschwindigkeit | FET -Typ | Aktuelle Bewertung (Verstärker) | Strom - Hold (ih) (max) | Testedingung | Leistung - Ausgabe | Gewinnen | Aktuell | Stromspannung | Spannung - Isolation | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Triactyp | Spannung - Staat | Strom - Auf Status (It (RMS)) (max) | Spannung - Gate Trigger (VGT) (max) | Strom - nicht -rep. Surge 50, 60 Hz (ITSM) | Strom - Gate Trigger (IGT) (max) | RAUSCHFIGUR | Spannung - DC Reverse (VR) (max) | Spannung - vorwärts (vf) (max) @ if | Reverse Recovery Time (TRR) | Strom - reverse -lockage @ vr | Biebstemperatur - übergang | Strom - Dassche Anitt Buhben (IO) | Kapazität @ vr, f | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Spannung - Zener (NOM) (VZ) | Impedanz (max) (ZZT) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | 2SD1619T-TD-E-FS | 0,1100 | ![]() | 46 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1.000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RFD8P06LE | 0,3300 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 8a (TC) | 4,5 V, 5 V. | 300mohm @ 8a, 5V | 2v @ 250 ähm | 30 NC @ 10 V | ± 10 V | 675 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5821 | 0,2000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Do-201aa, Do-27, axial | 1n58 | Schottky | Do-201 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.10.0080 | 1.603 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 30 v | 900 mv @ 9.4 a | 2 ma @ 30 v | -50 ° C ~ 150 ° C. | 3a | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDB2532-F085 | - - - | ![]() | 3736 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 79a (TC) | 6 V, 10V | 16mohm @ 33a, 10V | 4v @ 250 ähm | 107 NC @ 10 V | ± 20 V | 5870 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BZX85C18-T50R | 0,0300 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C (TJ) | K. Loch | Do-204Al, Do-41, axial | 1 w | DO-204AL (DO-41) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.10.0050 | 1 | 1,2 V @ 200 Ma | 500 NA @ 12,5 V. | 18 v | 20 Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FSB50825A | 5.0100 | ![]() | 922 | 0.00000000 | Fairchild Semiconductor | Bewegung SPM® 5 | Schüttgut | Aktiv | K. Loch | 23-Powerdip-Modul (0,551 ", 14,00 mm) | Mosfet | Herunterladen | Ear99 | 8542.39.0001 | 1 | 3 Phase | 3.6 a | 250 V | 1500 VRMs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7052 | 0,0600 | ![]() | 5293 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12 | 100 v | 1,5 a | 200na | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 1000 @ 1a, 5v | 200 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BCX71J | 0,0300 | ![]() | 118 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX71 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 100 ma | 20na | PNP | 550 MV @ 1,25 mA, 50 mA | 250 @ 2MA, 5V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FFPF10UP20STU | 0,5300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | To-220-2 Full Pack | Standard | To-220f-2l | Herunterladen | Ear99 | 8542.39.0001 | 567 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 200 v | 1,15 V @ 10 a | 35 ns | 100 µA @ 200 V. | -65 ° C ~ 150 ° C. | 10a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FGH75N60SFTU | - - - | ![]() | 1451 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 452 w | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | 400 V, 75A, 3OHM, 15 V. | Feldstopp | 600 V | 150 a | 225 a | 2,9 V @ 15V, 75A | 2,7MJ (EIN), 1MJ (AUS) | 250 NC | 26ns/138ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSD261GBU | 0,0300 | ![]() | 4116 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 9.000 | 20 v | 500 mA | 100NA (ICBO) | Npn | 400 mv @ 50 mA, 500 mA | 200 @ 100ma, 1V | - - - | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N4001 | 0,0200 | ![]() | 131 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Do-204Al, Do-41, axial | Standard | DO-204AL (DO-41) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 5.000 | Standardwiederherhersterung> 500 ns,> 200 Ma (IO) | 50 v | 1,1 V @ 1 a | 5 µa @ 50 V | -55 ° C ~ 175 ° C. | 1a | 15PF @ 4V, 1 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | RFD8P05SM | 1.0000 | ![]() | 7129 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | P-Kanal | 50 v | 8a (TC) | 300mohm @ 8a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FPAM50LH60 | 31.8600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | PFC SPM® 2 | Schüttgut | Aktiv | K. Loch | 32-Powerdip-Modul (1,370 ", 34,80 mm) | IGBT | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 Phase | 50 a | 600 V | 2500 VRMs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5244BTR | 0,0300 | ![]() | 174 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | ± 5% | -65 ° C ~ 200 ° C. | K. Loch | Do-204AH, Do-35, axial | 500 MW | DO-35 (Do-204AH) | Herunterladen | Ear99 | 8541.10.0050 | 11.539 | 1,2 V @ 200 Ma | 100 na @ 10 v | 14 v | 15 Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FKN08PN40S | 0,1400 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | K. Loch | To-226-3, bis 92-3 (to-226aa) | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.30.0080 | 1.000 | Einzel | 15 Ma | Logik - Sensitive Gate | 400 V | 800 mA | 2 v | 8a @ 60Hz | 5 Ma | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BD233Stu | 0,1400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 25 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 60 | 45 V | 2 a | 100 µA (ICBO) | Npn | 600mv @ 100 mA, 1a | 25 @ 1a, 2v | 3MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJC2383OTF | 0,0700 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 160 v | 1 a | 1 µA (ICBO) | Npn | 1,5 V @ 50 Ma, 500 mA | 100 @ 200 Ma, 5V | 100 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MMSD4448 | 0,0300 | ![]() | 76 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SOD-123 | Standard | SOD-123 | Herunterladen | Ear99 | 8542.39.0001 | 10.764 | Kleine Signal = <200 Ma (IO), Jede Geschwindigkeit | 100 v | 1 V @ 100 mA | 4 ns | 5 µa @ 75 V | 150 ° C (max) | 200 ma | 2PF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N5247 | 0,1800 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 30 v | To-226-3, bis 92-3 (to-226aa) | 2N5247 | 400 MHz | Jfet | To-92-3 | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | 0000.00.0000 | 1 | N-Kanal | - - - | - - - | - - - | 4db | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75545p3_R4932 | - - - | ![]() | 2302 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MBRP745TU | 0,3000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-2 | Schottky | To-220-2 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.10.0080 | 50 | SCHNELLE WEDERHERSTELLUNG = <500NS,> 200 Ma (IO) | 45 V | 650 MV @ 7,5 a | 1 ma @ 45 v | -65 ° C ~ 150 ° C. | 7.5a | - - - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PN2907ATF | 0,0400 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.036 | 60 v | 800 mA | 20na (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDP6676 | 0,9800 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 84a (ta) | 4,5 V, 10 V. | 6mohm @ 42a, 10V | 3v @ 250 ähm | 60 NC @ 5 V | ± 16 v | 5324 PF @ 15 V | - - - | 93W (TC) | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSE13003th1ATU | 0,4100 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 20 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V | 1,5 a | - - - | Npn | 3v @ 500 mA, 1,5a | 9 @ 500 mA, 2V | 4MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | KSA709YTA | 0,0600 | ![]() | 395 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 150 v | 700 Ma | 100NA (ICBO) | PNP | 400mv @ 20 mA, 200 mA | 120 @ 50 Ma, 2V | 50 MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQAF6N80 | 1.6000 | ![]() | 892 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 800 V | 4.4a (TC) | 10V | 1,95OHM @ 2,2a, 10 V. | 5 V @ 250 ähm | 31 NC @ 10 V | ± 30 v | 1500 PF @ 25 V. | - - - | 90W (TC) | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FJPF13007H1TTU | 0,4300 | ![]() | 75 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 40 w | To-220f-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 400 V | 8 a | - - - | Npn | 3v @ 2a, 8a | 15 @ 2a, 5v | 4MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002 | - - - | ![]() | 1501 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 2N7002 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 60 v | 115 Ma (TC) | 5v, 10V | 7.5OHM @ 50 Ma, 5V | ± 20 V | 50 PF @ 25 V. | 200 MW (TC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FQAF14N30 | 1.0400 | ![]() | 310 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 310 | N-Kanal | 300 V | 11.4a (TC) | 10V | 290MOHM @ 5.7A, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1360 PF @ 25 V. | - - - | 90W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
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