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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce |
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![]() | VS-GT75YF120NT | 139.9800 | ![]() | 108 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Kasten | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 431 w | Standard | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | 112-VS-GT75YF120NT | Ear99 | 8541.29.0095 | 12 | Volle Brucke | TRABENFELD STOPP | 1200 V | 118 a | 2,6 V @ 15V, 75a | 100 µA | Ja | |||||||||||||||
![]() | VS-50MT060PHTAPBF | 72.2800 | ![]() | 7222 | 0.00000000 | Vishay General Semiconductor - DioDes Division | Hexfred® | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | 12-MTP-Modul | 50MT060 | 305 w | Standard | 12-MTP | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 112-VS-50MT060PHTAPBF | 1 | Halbbrücke | TRABENFELD STOPP | 600 V | 121 a | 1,64 V @ 15V, 50a | 100 µA | Ja | 6000 PF @ 25 V. | ||||||||||||||||
CPV363M4F | - - - | ![]() | 2178 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | 19-sip (13 Leads), IMS-2 | CPV363 | 36 w | Standard | IMS-2 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 84 | Drei -Phase -wechselrichter | - - - | 600 V | 16 a | 1,63v @ 15V, 16a | 250 µA | NEIN | 1.1 NF @ 30 V | ||||||||||||||||
![]() | GB35XF120K | - - - | ![]() | 4628 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Veraltet | 150 ° C (TJ) | Chassis -berg | Econo2 | GB35 | 284 w | Standard | - - - | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 14 | Drei -Phase -wechselrichter | Npt | 1200 V | 50 a | 3v @ 15V, 50a | 100 µA | NEIN | 3.475 NF @ 30 V | |||||||||||||||
![]() | VS-GB600AH120N | - - - | ![]() | 3189 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Doppelter int-a-pak (5) | GB600 | 3125 w | Standard | Double Int-a-Pak | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | VSGB600AH120N | Ear99 | 8541.29.0095 | 12 | Einzel | - - - | 1200 V | 910 a | 1,9 V @ 15V, 600A (Typ) | 5 Ma | NEIN | 41 NF @ 25 V | |||||||||||||
![]() | VS-100MT060WDF | - - - | ![]() | 8536 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Tablett | Veraltet | 150 ° C (TJ) | Chassis -berg | 16-MTP-Modul | 100MT060 | 462 w | Standard | MTP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | VS100MT060WDF | Ear99 | 8541.29.0095 | 105 | - - - | 600 V | 121 a | 2,29 V @ 15V, 60a | 100 µA | Ja | 9.5 NF @ 30 V | ||||||||||||||
![]() | VS-GP300TD60S | - - - | ![]() | 5442 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Dual Int-A-Pak (3 + 8) | GP300 | 1136 w | Standard | Dual Int-A-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 12 | Halbbrücke | PT, Graben | 600 V | 580 a | 1,45 V @ 15V, 300A | 150 µa | NEIN | |||||||||||||||
![]() | VS-40MT060WFHT | - - - | ![]() | 2539 | 0.00000000 | Vishay General Semiconductor - DioDes Division | Hexfred® | Tablett | Veraltet | 150 ° C (TJ) | Chassis -berg | 12-MTP-Modul | 40MT060 | 284 w | Standard | 12-MTP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 112-VS-40MT060WFHT | Ear99 | 8541.29.0095 | 105 | Volle Brucke | - - - | 600 V | 67 a | - - - | 250 µA | Ja | |||||||||||||||
![]() | VS-GT80DA120U | 38.9900 | ![]() | 3455 | 0.00000000 | Vishay General Semiconductor - DioDes Division | Hexfred® | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | GT80 | 658 w | Standard | SOT-227 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 10 | Einzel | Graben | 1200 V | 139 a | 2,55 V @ 15V, 80a | 100 µA | NEIN | 4.4 NF @ 25 V | ||||||||||||||
![]() | VS-20MT120UFAPBF | - - - | ![]() | 8023 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Tablett | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 16-MTP-Modul | 20mt120 | 240 w | Standard | MTP | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | VS20MT120UFAPBF | Ear99 | 8541.29.0095 | 105 | Vollbrückke Wechselrichter | Npt | 1200 V | 20 a | 4,66v @ 15V, 40a | 250 µA | NEIN | 3.79 NF @ 30 V | |||||||||||||
Cpv363m4u | - - - | ![]() | 1226 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | 19-sip (13 Leads), IMS-2 | CPV363 | 36 w | Standard | IMS-2 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 160 | Drei -Phase -wechselrichter | - - - | 600 V | 13 a | 2v @ 15V, 13a | 250 µA | NEIN | 1.1 NF @ 30 V | |||||||||||||||
![]() | VS-20MT050XC | - - - | ![]() | 5741 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Tablett | Aktiv | - - - | - - - | - - - | 20mt050 | - - - | - - - | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | VS20MT050XC | Ear99 | 8541.29.0095 | 10 | - - - | - - - | - - - | NEIN | ||||||||||||||||||
![]() | FA38SA50LC | - - - | ![]() | 4174 | 0.00000000 | Vishay General Semiconductor - DioDes Division | Hexfet® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | FA38 | MOSFET (Metalloxid) | SOT-227 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 10 | N-Kanal | 500 V | 38a (TC) | 10V | 130mohm @ 23a, 10V | 4v @ 250 ähm | 420 NC @ 10 V | ± 20 V | 6900 PF @ 25 V. | - - - | 500W (TC) | ||||||||||||
![]() | VS-FC420SA10 | 23.7600 | ![]() | 6400 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | FC420 | MOSFET (Metalloxid) | SOT-227 | Herunterladen | Nicht Anwendbar | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 10 | N-Kanal | 100 v | 435a (TC) | 10V | 2,15 MOHM @ 200A, 10V | 3,8 V @ 750 ähm | 375 NC @ 10 V. | ± 20 V | 17300 PF @ 25 V. | - - - | 652W (TC) | |||||||||||||
VS-GP250SA60S | - - - | ![]() | 7566 | 0.00000000 | Vishay General Semiconductor - DioDes Division | - - - | Rohr | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | SOT-227-4, MiniBloc | GP250 | 893 w | Standard | SOT-227 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 10 | Einzel | PT, Graben | 600 V | 380 a | 1,3 V @ 15V, 100a | 100 µA | NEIN |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus