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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max Eingang LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) VCE (ON) (max) @ vge, IC Strom - Sammler Cutoff (max) NTC Thermistor Eingabekapazität (cies) @ vce
VS-GT250SA60S Vishay General Semiconductor - Diodes Division VS-GT250SA60S 35.5788
RFQ
 ECAD 5342 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Aktiv -40 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc 750 w Standard SOT-227 Herunterladen UnberÜHrt Ereichen 112-VS-GT250SA60S Ear99 8541.29.0095 160 Einzel TRABENFELD STOPP 600 V 359 a 1,16 V @ 15V, 100a 100 µA NEIN 24.2 NF @ 25 V.
VS-GA400TD60S Vishay General Semiconductor - Diodes Division VS-GA400TD60S - - -
RFQ
 ECAD 6642 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg Dual Int-A-Pak (3 + 8) GA400 1563 w Standard Dual Int-A-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSGA400TD60S Ear99 8541.29.0095 12 Halbbrücke - - - 600 V 750 a 1,52 V @ 15V, 400A 1 Ma NEIN
VS-GB100TP120N Vishay General Semiconductor - Diodes Division VS-GB100TP120N - - -
RFQ
 ECAD 2414 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet 150 ° C (TJ) Chassis -berg Int-a-Pak GB100 650 w Standard Int-a-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSGB100TP120N Ear99 8541.29.0095 24 Halbbrücke - - - 1200 V 200 a 2,2 V @ 15V, 100a 5 Ma NEIN 7.43 NF @ 25 V
VS-GB100YG120NT Vishay General Semiconductor - Diodes Division VS-GB100YG120NT - - -
RFQ
 ECAD 1943 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Chassis -berg Modul GB100 625 w Standard Econo3 4pack - - - Ear99 8541.29.0095 10 Volle Brucke Npt 1200 V 127 a 4V @ 15V, 100a 80 µA Ja
VS-GT200TP065N Vishay General Semiconductor - Diodes Division VS-GT200TP065N - - -
RFQ
 ECAD 7892 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Veraltet -40 ° C ~ 175 ° C (TJ) Chassis -berg Int-a-Pak GT200 600 w Standard Int-a-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 24 Halbbrücke Graben 650 V 221 a 2,12 V @ 15V, 200a 60 µA NEIN
VS-GP400TD60S Vishay General Semiconductor - Diodes Division VS-GP400TD60S - - -
RFQ
 ECAD 1185 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg Dual Int-A-Pak (3 + 8) GP400 1563 w Standard Dual Int-A-Pak Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 12 Halbbrücke PT, Graben 600 V 758 a 1,52 V @ 15V, 400A 200 µA NEIN
VS-FA72SA50LC Vishay General Semiconductor - Diodes Division VS-FA72SA50LC - - -
RFQ
 ECAD 1930 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc FA72 MOSFET (Metalloxid) SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSFA72SA50LC Ear99 8541.29.0095 160 N-Kanal 500 V 72a (TC) 10V 80Mohm @ 34a, 10V 4v @ 250 ähm 338 NC @ 10 V. ± 20 V 10000 PF @ 25 V. - - - 1136W (TC)
VS-FA40SA50LC Vishay General Semiconductor - Diodes Division VS-FA40SA50LC 24.7261
RFQ
 ECAD 2509 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc FA40 MOSFET (Metalloxid) SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSFA40SA50LC Ear99 8541.29.0095 160 N-Kanal 500 V 40a (TC) 10V 130mohm @ 23a, 10V 4v @ 250 ähm 420 NC @ 10 V ± 20 V 6900 PF @ 25 V. - - - 543W (TC)
VS-GP100TS60SFPBF Vishay General Semiconductor - Diodes Division VS-GP100TS60SFPBF - - -
RFQ
 ECAD 6512 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg Int-a-Pak GP100 781 w Standard Int-a-Pak Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 15 Halbbrücke PT, Graben 600 V 337 a 1,34 V @ 15V, 100a 150 µa NEIN
VS-ETF150Y65U Vishay General Semiconductor - Diodes Division VS-ETF150Y65U - - -
RFQ
 ECAD 4463 0.00000000 Vishay General Semiconductor - DioDes Division - - - Tablett Veraltet 175 ° C (TJ) Chassis -berg Emipak-2b ETF150 417 w Standard Emipak-2b Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 60 Drei -Level -Wechselrichter Graben 650 V 142 a 2.06 V @ 15V, 100a 100 µA NEIN 6.6 NF @ 30 V
VS-GT100TS065N Vishay General Semiconductor - Diodes Division VS-GT100TS065N 74.1100
RFQ
 ECAD 5534 0.00000000 Vishay General Semiconductor - DioDes Division - - - Kasten Aktiv -40 ° C ~ 175 ° C (TJ) Chassis -berg Modul 259 w Standard INT-A-PAK IGBT - - - ROHS3 -KONFORM 1 (unbegrenzt) 112-VS-GT100TS065N 15 Halbbrückke Wechselrichter TRABENFELD STOPP 650 V 96 a 2,3 V @ 15V, 100a 50 µA NEIN
VS-GT75LA60UF Vishay General Semiconductor - Diodes Division VS-GT75LA60UF 40.2600
RFQ
 ECAD 4260 0.00000000 Vishay General Semiconductor - DioDes Division Fred Pt® Schüttgut Aktiv -40 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc GT75 231 w Standard SOT-227 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 112-VS-GT75LA60UF 1 Einzelhubschlaar TRABENFELD STOPP 600 V 81 a 2,26 V @ 15V, 70a 100 µA NEIN
CPV362M4F Vishay General Semiconductor - Diodes Division CPV362M4F - - -
RFQ
 ECAD 7380 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Aktiv -40 ° C ~ 150 ° C (TJ) K. Loch 19-sip (13 Leads), IMS-2 CPV362 23 w Standard IMS-2 - - - Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 160 Drei -Phase -wechselrichter - - - 600 V 8.8 a 1,66 V @ 15V, 8,8a 250 µA NEIN 340 PF @ 30 V
VS-EMF050J60U Vishay General Semiconductor - Diodes Division VS-EMF050J60U - - -
RFQ
 ECAD 5252 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet 150 ° C (TJ) Chassis -berg Emipak2 EMF050 338 w Standard Emipak2 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSEMF050J60U Ear99 8541.29.0095 56 Drei -Level -Wechselrichter - - - 600 V 88 a 2,1 V @ 15V, 50a 100 µA NEIN 9.5 NF @ 30 V
VS-GB05XP120KTPBF Vishay General Semiconductor - Diodes Division VS-GB05XP120KTPBF - - -
RFQ
 ECAD 5750 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Aktiv -40 ° C ~ 150 ° C (TJ) Chassis -berg 12-MTP-Modul GB05 76 w Standard MTP Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSGB05XP120KTPBF Ear99 8541.29.0095 105 Drei -Phase -wechselrichter - - - 1200 V 12 a - - - 250 µA Ja
FA57SA50LC Vishay General Semiconductor - Diodes Division FA57SA50LC - - -
RFQ
 ECAD 7881 0.00000000 Vishay General Semiconductor - DioDes Division Hexfet® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc FA57 MOSFET (Metalloxid) SOT-227 - - - Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 10 N-Kanal 500 V 57a (TC) 10V 80Mohm @ 34a, 10V 4v @ 250 ähm 338 NC @ 10 V. ± 20 V 10000 PF @ 25 V. - - - 625W (TC)
VS-GT55NA120UX Vishay General Semiconductor - Diodes Division VS-GT55NA120ux 37.4900
RFQ
 ECAD 159 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Aktiv -40 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc 291 w Standard SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen 112-VS-GT55NA120ux Ear99 8541.29.0095 10 Einzelhubschlaar TRABENFELD STOPP 1200 V 68 a 2,8 V @ 15V, 50a 50 µA NEIN
VS-CPV363M4KPBF Vishay General Semiconductor - Diodes Division VS-CPV363M4KPBF - - -
RFQ
 ECAD 3037 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) K. Loch 19-sip (13 Leads), IMS-2 CPV363 36 w Standard IMS-2 - - - ROHS3 -KONFORM 1 (unbegrenzt) Ear99 8541.29.0095 160 - - - 600 V 11 a 2,1 V @ 15V, 6a 250 µA NEIN 740 PF @ 30 V
VS-FB180SA10P Vishay General Semiconductor - Diodes Division VS-FB180SA10P - - -
RFQ
 ECAD 3277 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc FB180 MOSFET (Metalloxid) SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) VSFB180SA10P Ear99 8541.29.0095 160 N-Kanal 100 v 180a (TC) 10V 6,5 MOHM @ 180A, 10V 4v @ 250 ähm 380 nc @ 10 v ± 20 V 10700 PF @ 25 V. - - - 480W (TC)
GA400TD25S Vishay General Semiconductor - Diodes Division GA400TD25S - - -
RFQ
 ECAD 6917 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg Dual Int-A-Pak (3 + 8) GA400 1350 w Standard Dual Int-A-Pak Herunterladen Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 10 Halbbrücke - - - 250 V 400 a 1,6 V @ 15V, 400A 500 µA NEIN 36 NF @ 30 V
VS-GB75YF120N Vishay General Semiconductor - Diodes Division VS-GB75YF120N - - -
RFQ
 ECAD 9089 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet 150 ° C (TJ) Chassis -berg Modul GB75 480 w Standard Econo2 4pack Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Vsgb75yf120n Ear99 8541.29.0095 12 - - - 1200 V 100 a 4,5 V @ 15V, 100a 250 µA NEIN
VS-CPV363M4UPBF Vishay General Semiconductor - Diodes Division VS-CPV363M4UPBF - - -
RFQ
 ECAD 3479 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) K. Loch 19-sip (13 Leads), IMS-2 CPV363 36 w Standard IMS-2 - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 160 - - - 600 V 13 a 2,2 V @ 15V, 6,8a 250 µA NEIN 1.1 NF @ 30 V
VS-ENK025C65S Vishay General Semiconductor - Diodes Division VS-ENK025C65S 71.2300
RFQ
 ECAD 10 0.00000000 Vishay General Semiconductor - DioDes Division * Kasten Aktiv Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen 112-VS-Enk025C65s Ear99 8541.29.0095 100
VS-GA100NA60UP Vishay General Semiconductor - Diodes Division VS-GA100NA60UP - - -
RFQ
 ECAD 8659 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc GA100 250 w Standard SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) VSGA100NA60UP Ear99 8541.29.0095 180 Einzel - - - 600 V 100 a 2,1 V @ 15V, 50a 250 µA NEIN 7.4 NF @ 30 V
VS-FC270SA20 Vishay General Semiconductor - Diodes Division VS-FC270SA20 27.3100
RFQ
 ECAD 3308 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc FC270 MOSFET (Metalloxid) SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 10 N-Kanal 200 v 287a (TC) 10V 4,7mohm @ 200a, 10V 4,3 V @ 1ma 250 NC @ 10 V ± 20 V 16500 PF @ 100 V - - - 937W (TC)
VS-GB100DA60UP Vishay General Semiconductor - Diodes Division VS-GB100DA60UP - - -
RFQ
 ECAD 4740 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg SOT-227-4, MiniBloc GB100 447 w Standard SOT-227 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) VSGB100DA60UP Ear99 8541.29.0095 180 Einzel - - - 600 V 125 a 2,8 V @ 15V, 100a 100 µA NEIN
VS-150MT060WDF Vishay General Semiconductor - Diodes Division VS-150MT060WDF - - -
RFQ
 ECAD 7943 0.00000000 Vishay General Semiconductor - DioDes Division - - - Rohr Veraltet 150 ° C (TJ) Chassis -berg 12-MTP-Modul 150mt060 543 w Standard 12-MTP PressFit - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 105 Dual Buck Chopper - - - 600 V 138 a 2,48 V @ 15V, 80a 100 µA Ja 14 NF @ 30 V
VS-GB100LH120N Vishay General Semiconductor - Diodes Division VS-GB100LH120N - - -
RFQ
 ECAD 2036 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg Doppelter int-a-pak (3 + 4) GB100 833 w Standard Double Int-a-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSGB100LH120N Ear99 8541.29.0095 12 Einzel - - - 1200 V 200 a 1,77 V @ 15V, 100A (Typ) 1 Ma NEIN 8.96 NF @ 25 V
VS-GB300LH120N Vishay General Semiconductor - Diodes Division VS-GB300LH120N - - -
RFQ
 ECAD 5475 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet 150 ° C (TJ) Chassis -berg Doppelter int-a-pak (3 + 4) GB300 1645 w Standard Double Int-a-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen VSGB300LH120N Ear99 8541.29.0095 12 Einzel - - - 1200 V 500 a 2V @ 15V, 300A (Typ) 5 Ma NEIN 21.2 NF @ 25 V.
VS-GB200TH120U Vishay General Semiconductor - Diodes Division VS-GB200th120U - - -
RFQ
 ECAD 9330 0.00000000 Vishay General Semiconductor - DioDes Division - - - Schüttgut Veraltet 150 ° C (TJ) Chassis -berg Doppelter int-a-pak (3 + 4) GB200 1316 w Standard Double Int-a-Pak - - - ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Vsgb200th120u Ear99 8541.29.0095 12 Halbbrücke - - - 1200 V 330 a 3,6 V @ 15V, 200a 5 Ma NEIN 16.9 NF @ 30 V
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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SIC
AD9208BBPZ-3000

196-LFBGA Expositionspad

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