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Bild | Produktnummer | Preisgestaltung (USD) | Menge | ECAD | Menge verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Betriebstemperatur | Montagetyp | Paket / Fall | Grundproduktnummer | Technologie | Kraft - Max | Lieferantengerätepaket | Datenblatt | ROHS -Status | Feuchtigkeitsempfindlichkeit (MSL) | Status erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Abtropfen Sie zur Quellspannung (VDSS) | Strom - kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (maximale RDS an, min RDS eins) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (QG) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Funktion | Leistungsdissipation (max) |
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![]() | IRF620SPBF | 2.0400 | ![]() | 1 | 0,00000000 | Vishay Siliconix | - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 leitete + tab), to-263ab | Irf620 | MOSFET (Metalloxid) | D²pak (to-263) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | *IRF620SPBF | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 5.2a (TC) | 10V | 800MOHM @ 3.1a, 10V | 4V @ 250 um | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - | 3W (TA), 50 W (TC) | ||||
![]() | SIHG73N60E-E3 | 8.7392 | ![]() | 1696 | 0,00000000 | Vishay Siliconix | - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-247-3 | SIHG73 | MOSFET (Metalloxid) | To-247ac | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 73a (TC) | 10V | 39mohm @ 36a, 10V | 4V @ 250 um | 362 NC @ 10 V | ± 30 V | 7700 PF @ 100 V | - - | 520W (TC) | |||||
IRFPS40N60KPBF | - - | ![]() | 3131 | 0,00000000 | Vishay Siliconix | - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-274aa | IRFPS40 | MOSFET (Metalloxid) | Super-247 ™ (to-274aa) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | *IRFPS40N60KPBF | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 40a (TC) | 10V | 130mohm @ 24a, 10V | 5 V @ 250 um | 330 NC @ 10 V | ± 30 V | 7970 PF @ 25 V. | - - | 570W (TC) | |||||
![]() | SIA931DJ-T1-GE3 | 0,5300 | ![]() | 43 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 Dual | Sia931 | MOSFET (Metalloxid) | 7.8W | Powerpak® SC-70-6 Dual | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 P-Kanal (Dual) | 30V | 4,5a | 65mohm @ 3a, 10V | 2,2 V @ 250 um | 13nc @ 10v | 445PF @ 15V | Logikpegel -Tor | |||||||
![]() | IRF644 | - - | ![]() | 8701 | 0,00000000 | Vishay Siliconix | - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-220-3 | IRF644 | MOSFET (Metalloxid) | To-220ab | herunterladen | ROHS nicht konform | 1 (unbegrenzt) | Unberührt erreichen | *IRF644 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 250 V | 14a (TC) | 10V | 280 MOHM @ 8.4a, 10V | 4V @ 250 um | 68 NC @ 10 V. | ± 20 V | 1300 PF @ 25 V. | - - | 125W (TC) | |||
![]() | SI4778DY-T1-E3 | - - | ![]() | 8494 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breite) | SI4778 | MOSFET (Metalloxid) | 8-soic | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 25 v | 8a (TC) | 4,5 V, 10 V | 23mohm @ 7a, 10V | 2,2 V @ 250 um | 18 NC @ 10 V. | ± 16 V | 680 PF @ 13 V. | - - | 2,4 W (TA), 5W (TC) | |||||
![]() | SI4228DY-T1-E3 | - - | ![]() | 3738 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breite) | SI4228 | MOSFET (Metalloxid) | 3.1W | 8-soic | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | 2 N-Kanal (Dual) | 25 V | 8a | 18mohm @ 7a, 10V | 1,4 V @ 250 um | 25nc @ 10v | 790pf @ 12.5V | Logikpegel -Tor | |||||||
![]() | IRFR024TRLPBF | 1.6800 | ![]() | 9041 | 0,00000000 | Vishay Siliconix | - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 leitet + tab), sc-63 | IRFR024 | MOSFET (Metalloxid) | D-Pak | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 14a (TC) | 10V | 100MOHM @ 8.4a, 10V | 4V @ 250 um | 25 NC @ 10 V | ± 20 V | 640 PF @ 25 V. | - - | 2,5 W (TA), 42W (TC) | |||||
![]() | SI6410DQ-T1-GE3 | - - | ![]() | 2942 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breite) | SI6410 | MOSFET (Metalloxid) | 8-tssop | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 7.8a (ta) | 4,5 V, 10 V | 14mohm @ 7.8a, 10V | 1 V @ 250 um (min) | 33 NC @ 5 V. | ± 20 V | - - | 1,5 W (TA) | |||||
![]() | IRC540PBF | - - | ![]() | 5017 | 0,00000000 | Vishay Siliconix | Hexfet® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Durch Loch | To-220-5 | IRC540 | MOSFET (Metalloxid) | To-220-5 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | *IRC540PBF | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 28a (TC) | 10V | 77mohm @ 17a, 10V | 4V @ 250 um | 69 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | Stromerkennung | 150W (TC) | |||
![]() | SI7450DP-T1-E3 | 2.9000 | ![]() | 475 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7450 | MOSFET (Metalloxid) | Powerpak® SO-8 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 3.2a (ta) | 6 V, 10V | 80Mohm @ 4a, 10V | 4,5 V @ 250 um | 42 NC @ 10 V. | ± 20 V | - - | 1,9W (TA) | ||||||
![]() | SUD50N04-05L-E3 | - - | ![]() | 7499 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 leitet + tab), sc-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 115a (TC) | 4,5 V, 10 V | 5.4mohm @ 20a, 10V | 3v @ 250 um | 135 NC @ 10 V | ± 20 V | 5600 PF @ 25 V. | - - | 136W (TC) | ||||
![]() | SI4210DY-T1-GE3 | - - | ![]() | 6502 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breite) | SI4210 | MOSFET (Metalloxid) | 2.7W | 8-soic | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | 2 N-Kanal (Dual) | 30V | 6.5a | 35,5 MOHM @ 5A, 10V | 2,5 V @ 250 um | 12nc @ 10v | 445PF @ 15V | Logikpegel -Tor | |||||||
![]() | SIE800DF-T1-E3 | - - | ![]() | 6503 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 10-polarpak® (s) | Sie800 | MOSFET (Metalloxid) | 10-polarpak® (s) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V | 7,2 MOHM @ 11A, 10V | 3v @ 250 um | 35 NC @ 10 V | ± 20 V | 1600 PF @ 15 V | - - | 5.2W (TA), 104W (TC) | ||||
![]() | IRF640LPBF | - - | ![]() | 9590 | 0,00000000 | Vishay Siliconix | - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-262-3 lange Leads, i²pak, to-262aaa | IRF640 | MOSFET (Metalloxid) | To-262-3 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | *IRF640LPBF | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4V @ 250 um | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - | 3.1W (TA), 130 W (TC) | |||
![]() | IRFBF20StrRPBF | 1.4682 | ![]() | 1875 | 0,00000000 | Vishay Siliconix | - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 leitete + tab), to-263ab | IRFBF20 | MOSFET (Metalloxid) | D²pak (to-263) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 900 V | 1.7a (TC) | 10V | 8ohm @ 1a, 10V | 4V @ 250 um | 38 nc @ 10 v | ± 20 V | 490 PF @ 25 V. | - - | 3.1W (TA), 54W (TC) | |||||
![]() | SI4401BDY-T1-E3 | 1.9500 | ![]() | 21 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breite) | SI4401 | MOSFET (Metalloxid) | 8-soic | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 40 v | 8.7a (ta) | 4,5 V, 10 V | 14mohm @ 10.5a, 10V | 3v @ 250 um | 55 NC @ 5 V. | ± 20 V | - - | 1,5 W (TA) | ||||||
![]() | IRFL110TR | - - | ![]() | 7659 | 0,00000000 | Vishay Siliconix | - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | Irfl110 | MOSFET (Metalloxid) | SOT-223 | herunterladen | ROHS nicht konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 1,5a (TC) | 10V | 540MOHM @ 900 mA, 10V | 4V @ 250 um | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - | 2W (TA), 3,1W (TC) | ||||
![]() | IRF9640StrRPBF | 3.4500 | ![]() | 6 | 0,00000000 | Vishay Siliconix | - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 leitete + tab), to-263ab | IRF9640 | MOSFET (Metalloxid) | D²pak (to-263) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | P-Kanal | 200 v | 11a (TC) | 10V | 500mohm @ 6.6a, 10V | 4V @ 250 um | 44 NC @ 10 V. | ± 20 V | 1200 PF @ 25 V. | - - | 125W (TC) | |||||
![]() | IRLR120TR | - - | ![]() | 6630 | 0,00000000 | Vishay Siliconix | - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 leitet + tab), sc-63 | IRLR120 | MOSFET (Metalloxid) | D-Pak | herunterladen | ROHS nicht konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 7.7a (TC) | 4V, 5V | 270 MOHM @ 4,6A, 5V | 2v @ 250 um | 12 NC @ 5 V | ± 10 V | 490 PF @ 25 V. | - - | 2,5 W (TA), 42W (TC) | |||||
![]() | IRFP240 | - - | ![]() | 4518 | 0,00000000 | Vishay Siliconix | - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-247-3 | IRFP240 | MOSFET (Metalloxid) | To-247ac | herunterladen | ROHS nicht konform | 1 (unbegrenzt) | Unberührt erreichen | *IRFP240 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 200 v | 20A (TC) | 10V | 180mohm @ 12a, 10V | 4V @ 250 um | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - | 150W (TC) | |||
![]() | SIB417DK-T1-GE3 | - - | ![]() | 7334 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-75-6 | SIB417 | MOSFET (Metalloxid) | Powerpak® SC-75-6 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 9a (TC) | 1,2 V, 4,5 V | 52mohm @ 5.6a, 4,5 V | 1V @ 250 um | 12.75 NC @ 5 V | ± 5 V | 675 PF @ 4 V. | - - | 2,4W (TA), 13W (TC) | ||||
![]() | SIHP12N50E-GE3 | 1.8600 | ![]() | 971 | 0,00000000 | Vishay Siliconix | - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-220-3 | SIHP12 | MOSFET (Metalloxid) | To-220ab | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 10.5a (TC) | 10V | 380Mohm @ 6a, 10V | 4V @ 250 um | 50 nc @ 10 v | ± 30 V | 886 PF @ 100 V | - - | 114W (TC) | |||||
SI1012X-T1-E3 | - - | ![]() | 4468 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | SI1012 | MOSFET (Metalloxid) | SC-89-3 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 500 mA (TA) | 1,8 V, 4,5 V | 700 MOHM @ 600 mA, 4,5 V. | 900 mV @ 250 um | 0,75 NC @ 4,5 V | ± 6 V | - - | 250 MW (TA) | ||||||
![]() | SIA447DJ-T1-GE3 | 0,4800 | ![]() | 100 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA447 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 12a (TC) | 1,5 V, 4,5 V | 13,5 MOHM @ 7A, 4,5 V | 850 mV @ 250 um | 80 nc @ 8 v | ± 8 V | 2880 PF @ 6 V | - - | 19W (TC) | |||||
![]() | Irf830al | - - | ![]() | 4243 | 0,00000000 | Vishay Siliconix | - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Durch Loch | To-262-3 lange Leads, i²pak, to-262aaa | Irf830 | MOSFET (Metalloxid) | I2pak | herunterladen | ROHS nicht konform | 1 (unbegrenzt) | Unberührt erreichen | *Irf830al | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 5a (TC) | 10V | 1,4ohm @ 3a, 10V | 4,5 V @ 250 um | 24 nc @ 10 v | ± 30 V | 620 PF @ 25 V. | - - | 3.1W (TA), 74W (TC) | |||
![]() | SUD06N10-225L-E3 | - - | ![]() | 2256 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 leitet + tab), sc-63 | SUD06 | MOSFET (Metalloxid) | To-252aa | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 6,5a (TC) | 4,5 V, 10 V | 200mohm @ 3a, 10V | 3v @ 250 um | 4 NC @ 5 V. | ± 20 V | 240 PF @ 25 V. | - - | 1,25W (TA), 20W (TC) | ||||
![]() | SI4411DY-T1-E3 | - - | ![]() | 4276 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breite) | SI4411 | MOSFET (Metalloxid) | 8-soic | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 9a (ta) | 4,5 V, 10 V | 10mohm @ 13a, 10V | 3v @ 250 um | 65 NC @ 5 V | ± 20 V | - - | 1,5 W (TA) | |||||
![]() | SI7446BDP-T1-GE3 | - - | ![]() | 5319 | 0,00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7446 | MOSFET (Metalloxid) | Powerpak® SO-8 | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | Unberührt erreichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 12a (ta) | 4,5 V, 10 V | 7,5 MOHM @ 19A, 10V | 3v @ 250 um | 33 NC @ 5 V. | ± 20 V | 3076 PF @ 15 V | - - | 1,9W (TA) | ||||
![]() | SIHB22N60EF-GE3 | 3.5600 | ![]() | 4462 | 0,00000000 | Vishay Siliconix | EF | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 leitete + tab), to-263ab | SIHB22 | MOSFET (Metalloxid) | D²pak (to-263) | herunterladen | ROHS3 -konform | 1 (unbegrenzt) | 2266-SIHB22N60EF-GE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 19A (TC) | 10V | 182mohm @ 11a, 10V | 4V @ 250 um | 96 NC @ 10 V | ± 30 V | 1423 PF @ 100 V | - - | 179W (TC) |
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