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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | SIDR500EP-T1-RE3 | 3.4400 | ![]() | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | 742-SIDR500EP-T1-RE3DKR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 94a (TA), 421a (TC) | 4,5 V, 10 V. | 0,47 MOHM @ 20A, 10 V. | 2,2 V @ 250 ähm | 180 nc @ 10 v | +16 V, -12v | 8960 PF @ 15 V | - - - | 7,5 W (TA), 150 W (TC) | |||||
![]() | SQJQ184ER-T1_GE3 | 3.6700 | ![]() | 451 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powermd, Möwenflügel | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 80 v | 430a (TC) | 10V | 1,4mohm @ 20a, 10V | 3,5 V @ 250 ähm | 240 nc @ 10 v | ± 20 V | 16009 PF @ 25 V. | - - - | 600W (TC) | ||||||
![]() | Sidr570ep-t1-re3 | 3.0300 | ![]() | 8461 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 30,8a (TA), 90,9a (TC) | 7,5 V, 10 V. | 7,9 MOHM @ 20A, 10V | 4v @ 250 ähm | 71 NC @ 10 V | ± 20 V | 3740 PF @ 75 V | - - - | 7,5 W (TA), 150 W (TC) | ||||||
![]() | SI3483DDV-T1-BE3 | 0,5500 | ![]() | 16 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 6.4a (TA), 8a (TC) | 4,5 V, 10 V. | 31.2mohm @ 5a, 10V | 2,2 V @ 250 ähm | 14,5 NC @ 10 V. | +16 V, -20 V | 580 PF @ 15 V | - - - | 2W (TA), 3W (TC) | ||||||
![]() | SIHA21N65EF-GE3 | 4.7200 | ![]() | 3706 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SiHa21N65EF-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 21a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 106 NC @ 10 V | ± 30 v | 2322 PF @ 100 V | - - - | 35W (TC) | |||||
![]() | Sidr870adp-t1-re3 | 2.3800 | ![]() | 30 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | 742-SIDR870ADP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 21,8a (TA), 95A (TC) | 4,5 V, 10 V. | 6,6 MOHM @ 20A, 10V | 3v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 2866 PF @ 50 V | - - - | 6,25W (TA), 125W (TC) | |||||
![]() | SIHFRC20TR-GE3 | 0,9400 | ![]() | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-SIHFRC20TR-GE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 600 V | 2a (TC) | 10V | 4,4ohm @ 1,2a, 10 V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
![]() | SQJ914EP-T1_BE3 | 1.3000 | ![]() | 2763 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ914 | MOSFET (Metalloxid) | 27W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ914EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 30a (TC) | 12mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 25nc @ 10v | 1110pf @ 15V | - - - | ||||||
![]() | SI3460BDV-T1-BE3 | 0,9100 | ![]() | 48 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3460BDV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 6.7a (TA), 8a (TC) | 1,8 V, 4,5 V. | 27mohm @ 5.1a, 4,5 V. | 1V @ 250 ähm | 24 nc @ 8 v | ± 8 v | 860 PF @ 10 V | - - - | 2W (TA), 3,5 W (TC) | |||||
![]() | SI2333DDS-T1-BE3 | 0,4200 | ![]() | 2908 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2333DDS-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 5a (ta), 6a (TC) | 1,5 V, 4,5 V. | 28mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 35 nc @ 8 v | ± 8 v | 1275 PF @ 6 V. | - - - | 1,2W (TA), 1,7W (TC) | |||||
![]() | SQJ481EP-T1_BE3 | 1.0000 | ![]() | 3518 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ481EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 80 v | 16a (TC) | 4,5 V, 10 V. | 80Mohm @ 10a, 10V | 2,5 V @ 250 ähm | 50 nc @ 10 v | ± 20 V | 2000 PF @ 25 V. | - - - | 45W (TC) | |||||
![]() | SIHP11N80E-BE3 | 3.5300 | ![]() | 916 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 12a (TC) | 10V | 440MOHM @ 5.5A, 10V | 4v @ 250 ähm | 88 NC @ 10 V | ± 30 v | 1670 PF @ 100 V | - - - | 179W (TC) | ||||||
![]() | SQJA76EP-T1_BE3 | 1.3300 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 75a (TC) | 10V | 2,4 MOHM @ 10a, 10V | 3,5 V @ 250 ähm | 100 nc @ 10 v | ± 20 V | 5250 PF @ 25 V. | - - - | 68W (TC) | |||||
![]() | SIHFR320TRL-GE3 | 0,9600 | ![]() | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-SIHFR320TRL-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
![]() | SQJ454EP-T1_BE3 | 1.3100 | ![]() | 6715 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ454EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 13a (TC) | 4,5 V, 10 V. | 145mohm @ 7,5a, 10 V | 2,5 V @ 250 ähm | 85 NC @ 10 V | ± 20 V | 2600 PF @ 25 V. | - - - | 68W (TC) | |||||
![]() | SI2342D-T1-BE3 | 0,5100 | ![]() | 3935 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2342D-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 8 v | 6a (ta), 6a (TC) | 1,2 V, 4,5 V. | 17mohm @ 7.2a, 4,5 V. | 800 MV @ 250 ähm | 15,8 NC @ 4,5 V. | ± 5 V | 1070 PF @ 4 V. | - - - | 1,3 W (TA), 2,5W (TC) | |||||
![]() | SQJA37EP-T1_BE3 | 0,9200 | ![]() | 1863 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA37EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 9,2mohm @ 6a, 10V | 2,5 V @ 250 ähm | 100 nc @ 10 v | ± 20 V | 4900 PF @ 25 V. | - - - | 45W (TC) | |||||
![]() | IRFR9014PBF-BE3 | 0,6468 | ![]() | 5929 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9014 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR9014PBF-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 5.1a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
![]() | SIHFR320TR-GE3 | 0,8800 | ![]() | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-SIHFR320TR-GE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
![]() | SQJA12EP-T1_GE3 | 1.8800 | ![]() | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 125 ° C. | MOSFET (Metalloxid) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | - - - | 10V | 8.6mohm @ 10a, 10V | 3v @ 250 ähm | 49.1 NC @ 10 V. | - - - | 3635 PF @ 25 V. | - - - | - - - | |||||||||
![]() | SIHF9Z24Strr-GE3 | 1.0800 | ![]() | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHF9Z24Strr-GE3CT | Ear99 | 8541.29.0095 | 800 | P-Kanal | 60 v | 11a (TC) | 10V | 280 MOHM @ 6.6a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 570 PF @ 25 V. | - - - | 3,7W (TA), 60 W (TC) | |||||
![]() | SQJ433EP-T1_BE3 | 1.4100 | ![]() | 3015 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ433EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 8.1MOHM @ 16A, 10V | 2,5 V @ 250 ähm | 108 NC @ 10 V | ± 20 V | 4877 PF @ 15 V | - - - | 83W (TC) | |||||
![]() | SI2301BDS-T1-BE3 | 0,4600 | ![]() | 6098 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2301BDS-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 2.2a (TA) | 2,5 V, 4,5 V. | 100MOHM @ 2,8a, 4,5 V. | 950 MV @ 250 ähm | 10 NC @ 4,5 V. | ± 8 v | 375 PF @ 6 V | - - - | 700 MW (TA) | |||||
![]() | SIHA21N60EF-GE3 | 4.0100 | ![]() | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 9a (TC) | 10V | 176mohm @ 11a, 10V | 4v @ 250 ähm | 84 NC @ 10 V | ± 30 v | 2030 PF @ 100 V | - - - | 35W (TC) | ||||||
![]() | SIHA15N60E-GE3 | 3.0700 | ![]() | 1682 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA15N60E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 15a (TC) | 10V | 280mohm @ 8a, 10V | 4v @ 250 ähm | 76 NC @ 10 V | ± 30 v | 1350 PF @ 100 V | - - - | 34W (TC) | |||||
![]() | SQJ407EP-T1_BE3 | 1.4800 | ![]() | 1406 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ407EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 60a (TC) | 4,5 V, 10 V. | 4.4mohm @ 10a, 10V | 2,5 V @ 250 ähm | 260 NC @ 10 V | ± 20 V | 10700 PF @ 25 V. | - - - | 68W (TC) | |||||
![]() | SIHB30N60ET1-GE3 | 6.0700 | ![]() | 426 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 15a, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 30 v | 2600 PF @ 100 V | - - - | 250 W (TC) | ||||||
![]() | SQJ844AEP-T1_BE3 | 1.2100 | ![]() | 7886 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ844 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-sqj844aep-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 8a (TC) | 16,6 MOHM @ 7,6A, 10V | 2,5 V @ 250 ähm | 26nc @ 10v | 1161pf @ 15V | - - - | ||||||
![]() | SIHA14N60E-GE3 | 2.3700 | ![]() | 6111 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA14N60E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 13a (TC) | 10V | 309mohm @ 7a, 10V | 4v @ 250 ähm | 64 NC @ 10 V | ± 30 v | 1205 PF @ 100 V | - - - | 147W (TC) | |||||
![]() | SIDR668DP-T1-RE3 | 2.9700 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | 742-SIDR668DP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 23,2a (TA), 95A (TC) | 7,5 V, 10 V. | 4,8 MOHM @ 20A, 10V | 3,4 V @ 250 ähm | 108 NC @ 10 V | ± 20 V | 5400 PF @ 50 V | - - - | 6,25W (TA), 125W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus