- RFQ
- Bom
- Kontaktieren Sie uns
Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
- chinesisch
- Englisch
- Französisch
- Deutsch
- Portugiesisch
- Spanisch
- Russisch
- japanisch
- Koreanisch
- Arabisch
- irisch
- griechisch
- Türkisch
- Italienisch
- dänisch
- rumänisch
- Indonesisch
- tschechisch
- Afrikaans
- Schwedisch
- Polieren
- baskisch
- katalanisch
- Esperanto
- Hindi
- Lao
- albanisch
- Amharisch
- Armenisch
- Aserbaidschani
- Weißrussland
- Bengali
- bosnisch
- bulgarisch
- Cebuano
- Chichewa
- Korsiker
- kroatisch
- Niederländisch
- estnisch
- Filipino
- finnisch
- Friesisch
- galizisch
- georgisch
- Gujarati
- haitianisch
- Hausa
- hawaiisch
- hebräisch
- Hmong
- ungarisch
- isländisch
- Igbo
- Javaner
- Kannada
- Kasachisch
- Khmer
- kurdisch
- Kirgisische
- lateinisch
- lettisch
- litauisch
- Luxembou ..
- mazedonisch
- Madagasy
- malaiisch
- Malayalam
- maltesisch
- Maori
- Marathi
- mongolisch
- birmanisch
- Nepali
- norwegisch
- PaShto
- persisch
- Punjabi
- serbisch
- Sesotho
- Sinhala
- slowakisch
- Slowenisch
- somali
- Samoaner
- Schotten gälisch
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- ukrainisch
- Urdu
- Usbekisch
- Vietnamesisch
- Walisisch
- Xhosa
- Jiddisch
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SQJ910AEP-T1_BE3 | 1.2800 |  | 1843 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ910 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-sqj910aep-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 30a (TC) | 7mohm @ 12a, 10V | 2,5 V @ 250 ähm | 39nc @ 10v | 1869Pf @ 15V | - - - | |||||||
 | SIHB120N60E-T5-GE3 | 5.2400 | | 795 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 25a (TC) | 10V | 120Mohm @ 12a, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 1562 PF @ 100 V | - - - | 179W (TC) | |||||||
 | IRFR224TRPBF-BE3 | 0,7088 | | 8112 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR224 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR224TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 250 V | 3.8a (TC) | 10V | 1,1OHM @ 2,3a, 10 V | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
 | SI2319DS-T1-BE3 | 0,7100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 40 v | 2.3a (TA) | 4,5 V, 10 V. | 82mohm @ 3a, 10V | 3v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 470 PF @ 20 V | - - - | 750 MW (TA) | |||||||
 | SQJ486EP-T1_BE3 | 1.2200 | | 2523 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 75 V | 30a (TC) | 4,5 V, 10 V. | 26mohm @ 5.9a, 10V | 2,1 V @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1386 PF @ 37 V | - - - | 56W (TC) | |||||||
| IRFR220TRPBF-BE3 | 0,6674 | | 3024 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR220 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR220TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 800MOHM @ 2,9a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
 | SI3469DV-T1-BE3 | 0,6600 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3469DV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 5a (ta) | 4,5 V, 10 V. | 30mohm @ 6.7a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | - - - | 1.14W (TA) | |||||||
| SIHD14N60ET4-GE3 | 2.3200 | | 2 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | D-Pak | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 13a (TC) | 10V | 309mohm @ 7a, 10V | 4v @ 250 ähm | 64 NC @ 10 V | ± 30 v | 1205 PF @ 100 V | - - - | 147W (TC) | |||||||
| SI2337DS-T1-BE3 | 1.0100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2337D-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 80 v | 1,2a (TA), 2,2a (TC) | 6 V, 10V | 270 MOHM @ 1,2A, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 500 PF @ 40 V | - - - | 760 MW (TA), 2,5 W (TC) | ||||||
| SQJ992EP-T2_GE3 | 0,9600 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ992 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 15a (TC) | 56.2mohm @ 3.7a, 10V | 2,5 V @ 250 ähm | 12nc @ 10v | 446PF @ 30V | - - - | ||||||||
| IRFR320TRPBF-BE3 | 1.7900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR320 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
 | SI6926ADQ-T1-BE3 | 1.2500 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | SI6926 | MOSFET (Metalloxid) | 830 MW (TA) | 8-tssop | Herunterladen | 1 (unbegrenzt) | 742-Si6926adq-t1-be3tr | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 20V | 4.1a (ta) | 30mohm @ 4,5a, 4,5 V. | 1V @ 250 ähm | 10.5nc @ 4,5V | - - - | - - - | |||||||
| SQJ860EP-T1_BE3 | 0,9600 | | 3561 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | MOSFET (Metalloxid) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ860EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 60a (TC) | 4,5 V, 10 V. | 6mohm @ 10a, 10V | 2,5 V @ 250 ähm | 55 NC @ 10 V | ± 20 V | 2700 PF @ 25 V. | - - - | 48W (TC) | ||||||
| SIHB30N60ET5-GE3 | 6.0700 | | 800 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 15a, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 30 v | 2600 PF @ 100 V | - - - | 250 W (TC) | |||||||
| IRLR110TRPBF-BE3 | 0,6321 | | 1917 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRLR110 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRLR110TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 4.3a (TC) | 4V, 5V | 540MOHM @ 2,6a, 5V | 2v @ 250 ähm | 6.1 NC @ 5 V | ± 10 V | 250 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | ||||||
 | SIHA25N50E-GE3 | 3.2000 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 26a (TC) | 10V | 145mohm @ 12a, 10V | 4v @ 250 ähm | 86 NC @ 10 V | ± 30 v | 1980 PF @ 100 V | - - - | 35W (TC) | |||||||
| IRFR220PBF-BE3 | 0,6674 | | 6996 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR220 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR220PBF-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 800MOHM @ 2,9a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
 | SISS5710DN-T1-GE3 | 1.7100 | | 29 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SISS5710DN-T1-GE3CT | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 7.2a (TA), 26,2a (TC) | 7,5 V, 10 V. | 31.5mohm @ 10a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 20 V | 770 PF @ 75 V | - - - | 4,1W (TA), 54,3W (TC) | |||||
 | SIS184LDN-T1-GE3 | 1.6100 | | 7 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 18,7a (TA), 69,4a (TC) | 4,5 V, 10 V. | 5.4mohm @ 10a, 10V | 3v @ 250 ähm | 41 nc @ 10 v | ± 20 V | 1950 PF @ 30 V | - - - | 3,7W (TA), 52W (TC) | ||||||
 | SQA602CEJW-T1_GE3 | 0,4200 | | 5 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® SC-70-6 | MOSFET (Metalloxid) | Powerpak®SC-70W-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 5.63a (TC) | 4,5 V, 10 V. | 94mohm @ 3a, 10V | 2,5 V @ 250 ähm | 8.2 NC @ 10 V | ± 20 V | 355 PF @ 25 V. | - - - | 13.6W (TC) | ||||||
| SIJA54ADP-T1-GE3 | 1.9300 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 35,4a (TA), 126a (TC) | 4,5 V, 10 V. | 2,3 MOHM @ 15a, 10V | 2,5 V @ 250 ähm | 70 nc @ 10 v | +20V, -16v | 3850 PF @ 20 V | - - - | 5.2W (TA), 65,7W (TC) | ||||||
 | SQ4840CEY-T1_GE3 | 1.3100 | | 2986 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4840CEY-T1_GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 20,7a (TC) | 4,5 V, 10 V. | 9mohm @ 14a, 10V | 2,5 V @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 2550 PF @ 20 V | - - - | 7.1W (TC) | ||||||
 | IRF840HPBF | 1.5800 | | 2304 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF840HPBF | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 7.3a (TC) | 10V | 850MOHM @ 4.8a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 30 v | 1059 PF @ 25 V. | - - - | 125W (TC) | ||||||
 | SQ3456CEV-T1_GE3 | 0,5300 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 7.8a (TC) | 4,5 V, 10 V. | 35mohm @ 6a, 10V | 2,5 V @ 250 ähm | 10 nc @ 10 v | ± 20 V | 460 PF @ 15 V | - - - | 4W (TC) | |||||||
| SQ3426CEV-T1_GE3 | 0,5500 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 7a (TC) | 4,5 V, 10 V. | 42mohm @ 5a, 10V | 2,5 V @ 250 ähm | 12 NC @ 4,5 V. | ± 20 V | 1300 PF @ 30 V | - - - | 5W (TC) | |||||||
| SIHB080N60E-GE3 | 5.4800 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB080N60E-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 35a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 227W (TC) | ||||||
| SISS5108DN-T1-GE3 | 1.8100 | | 40 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS5108 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 15,4a (TA), 55,9a (TC) | 7,5 V, 10 V. | 10.5mohm @ 10a, 10V | 4v @ 250 ähm | 23 NC @ 10 V | ± 20 V | 1150 PF @ 50 V | - - - | 5W (TA), 65,7W (TC) | ||||||
 | SIHG155N60EF-GE3 | 4.5500 | | 7320 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG155 | MOSFET (Metalloxid) | To-247ac | Herunterladen | 1 (unbegrenzt) | 742-SIHG155N60EF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 21a (TC) | 10V | 149mohm @ 2a, 10V | 5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1465 PF @ 100 V | - - - | 179W (TC) | |||||
 | SI7962DP-T1-E3 | - - - | | 4984 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SI7962 | MOSFET (Metalloxid) | 1.4W | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 7.1a | 17mohm @ 11.1a, 10V | 4,5 V @ 250 ähm | 70NC @ 10V | - - - | - - - | |||||||
| SI7983DP-T1-E3 | - - - | | 5701 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SI7983 | MOSFET (Metalloxid) | 1.4W | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 20V | 7.7a | 17mohm @ 12a, 4,5 V. | 1V @ 600 ähm | 74nc @ 4,5V | - - - | Logikpegel -tor |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
Wunschliste (0 Elemente)