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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SI4564DY-T1-GE3 | 1.3900 |  | 7615 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4564 | MOSFET (Metalloxid) | 3.1W, 3.2W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N und p-kanal | 40V | 10a, 9,2a | 17,5 Mohm @ 8a, 10V | 2v @ 250 ähm | 31nc @ 10v | 855PF @ 20V | Logikpegel -tor | |||||||
| SI4622DY-T1-GE3 | - - - | | 5712 | 0.00000000 | Vishay Siliconix | SkyFet®, Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4622 | MOSFET (Metalloxid) | 3.3W, 3.1W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 30V | 8a | 16mohm @ 9.6a, 10V | 2,5 V @ 1ma | 60nc @ 10v | 2458PF @ 15V | - - - | ||||||
 | SI5419DU-T1-GE3 | 0,6200 | | 21 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® Chipfet ™ Single | SI5419 | MOSFET (Metalloxid) | Powerpak® Chipfet ™ Single | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 12a (TC) | 4,5 V, 10 V. | 20mohm @ 6.6a, 10V | 2,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1400 PF @ 15 V | - - - | 3.1W (TA), 31W (TC) | |||||
 | SI5499DC-T1-GE3 | - - - | | 3336 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-smd, Flaches Blei | SI5499 | MOSFET (Metalloxid) | 1206-8 Chipfet ™ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 6a (TC) | 1,5 V, 4,5 V. | 36mohm @ 5.1a, 4,5 V. | 800 MV @ 250 ähm | 35 nc @ 8 v | ± 5 V | 1290 PF @ 4 V. | - - - | 2,5 W (TA), 6,2 W (TC) | ||||
 | SIB417AEDK-T1-GE3 | - - - | | 2624 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-75-6 | SIB417 | MOSFET (Metalloxid) | Powerpak® SC-75-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 9a (TC) | 1,2 V, 4,5 V. | 32mohm @ 3a, 4,5 V. | 1V @ 250 ähm | 18,5 NC @ 5 V. | ± 5 V | 878 PF @ 4 V. | - - - | 2,4W (TA), 13W (TC) | |||||
 | IRF9Z30PBF-BE3 | 2.6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF9Z30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9Z30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 50 v | 18a (TC) | 10V | 140Mohm @ 9.3a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 20 V | 900 PF @ 25 V. | - - - | 74W (TC) | |||||
| IRF740PBF-BE3 | 2.0400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF740 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF740PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 10a (TC) | 10V | 550MOHM @ 5.3A, 10V | 4v @ 250 ähm | 63 NC @ 10 V | ± 20 V | 1400 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRF840PBF-BE3 | 1.9400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF840 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF840PBF-BE3 | Ear99 | 8541.29.0095 | 100 | N-Kanal | 500 V | 8a (TC) | 10V | 850MOHM @ 4.8a, 10V | 4v @ 250 ähm | 63 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRFBG30PBF-BE3 | 2.5600 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBG30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBG30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 1000 v | 3.1a (TC) | 10V | 5ohm @ 1,9a, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 980 PF @ 25 V. | - - - | 125W (TC) | |||||
 | SQJ912AEP-T2_BE3 | - - - | | 8259 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ912 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | - - - | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 9,3mohm @ 9.7a, 10V | 2,5 V @ 250 ähm | 38nc @ 10v | 1835PF @ 20V | - - - | |||||||||
| IRL640PBF-BE3 | 2.4800 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRL640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRL640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 17a (TC) | 4V, 5V | 180Mohm @ 10a, 5V | 2v @ 250 ähm | 66 NC @ 5 V. | ± 10 V | 1800 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRF640PBF-BE3 | 1.9900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRF640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | |||||
 | IRFBC30APBF-BE3 | 3.0700 | | 7668 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC30 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRFBC30APBF-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 3.6a (TC) | 10V | 2.2ohm @ 2.2a, 10 V. | 4,5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 74W (TC) | |||||
 | SUD50P08-25L-BE3 | 2.6900 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 80 v | 12,5a (TA), 50A (TC) | 4,5 V, 10 V. | 25,2mohm @ 12,5a, 10V | 3v @ 250 ähm | 160 nc @ 10 v | ± 20 V | 4700 PF @ 40 V. | - - - | 8.3W (TA), 136W (TC) | ||||||
| IRFB11N50APBF-BE3 | 2.5100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFB11 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFB11N50APBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 11a (TC) | 10V | 520mohm @ 6.6a, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1423 PF @ 25 V. | - - - | 170W (TC) | |||||
| SUD20N10-66L-BE3 | 0,8500 | | 8550 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud20 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-Sud20N10-66L-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 16,9a (TC) | 4,5 V, 10 V. | 66mohm @ 6.6a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 860 PF @ 50 V | - - - | 2,1W (TA), 41,7W (TC) | |||||
 | SQ2308CE-T1_BE3 | 0,6700 | | 103 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2308 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | 742-SQ2308CE-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 2.3a (TC) | 4,5 V, 10 V. | 150 MOHM @ 2,3a, 10V | 2,5 V @ 250 ähm | 5.3 NC @ 10 V | ± 20 V | 205 PF @ 30 V | - - - | 2W (TC) | |||||
 | SQ3457EV-T1_BE3 | 0,6900 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3457 | MOSFET (Metalloxid) | 6-tsop | - - - | 1 (unbegrenzt) | 742-sq3457ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 6.8a (TC) | 4,5 V, 10 V. | 65mohm @ 6a, 10V | 2,5 V @ 250 ähm | 21 NC @ 10 V | ± 20 V | 705 PF @ 15 V | - - - | 5W (TC) | |||||
| SQ4483EY-T1_BE3 | 1.5100 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4483 | MOSFET (Metalloxid) | 8-soic | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 8.5Mohm @ 10a, 10V | 2,5 V @ 250 ähm | 113 NC @ 10 V | ± 20 V | 4500 PF @ 15 V | - - - | 7W (TC) | |||||
 | SQJ488EP-T2_BE3 | 1.5800 | | 9161 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ488 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 42a (TC) | 4,5 V, 10 V. | 21mohm @ 7.1a, 10V | 2,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 978 PF @ 50 V | - - - | 83W (TC) | ||||||
| SUD50P06-15-BE3 | 2.6600 | | 5178 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-Sud50p06-15-BE3CT | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 50a (TC) | 4,5 V, 10 V. | 15mohm @ 17a, 10V | 3v @ 250 ähm | 165 NC @ 10 V. | ± 20 V | 4950 PF @ 25 V. | - - - | 2,5 W (TA), 113W (TC) | |||||
| SISF06DN-T1-GE3 | 1.1800 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8SCD | SISF06 | MOSFET (Metalloxid) | 5.2W (TA), 69,4W (TC) | Powerpak® 1212-8SCD | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (dual) gemeinsame Abfluss | 30V | 28a (TA), 101a (TC) | 4,5 MOHM @ 7A, 10V | 2,3 V @ 250 ähm | 45nc @ 10v | 2050pf @ 15V | - - - | ||||||||
 | SISS80DN-T1-GE3 | 1.6700 | | 11 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS80 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 58,3a (TA), 210a (TC) | 2,5 V, 10 V. | 0,92 Mohm @ 10a, 10 V. | 1,5 V @ 250 ähm | 122 NC @ 10 V | +12 V, -8 V | 6450 PF @ 10 V. | - - - | 5W (TA), 65W (TC) | ||||||
| Sidr680adp-t1-re3 | 2.4900 | | 10 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sidr680 | MOSFET (Metalloxid) | Powerpak® SO-8DC | - - - | 1 (unbegrenzt) | 742-SIDR680ADP-T1-RE3DKR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 30,7a (TA), 137A (TC) | 7,5 V, 10 V. | 2,88 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 83 NC @ 10 V | ± 20 V | 4415 PF @ 40 V | - - - | 6,25W (TA), 125W (TC) | |||||
| SUD50P04-08-BE3 | 1,5000 | | 5751 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 40 v | 50a (TC) | 4,5 V, 10 V. | 15mohm @ 30a, 10V | 1V @ 250 ähm | 130 nc @ 10 v | ± 20 V | 5400 PF @ 25 V. | - - - | 3W (TA), 100W (TC) | ||||||
| SQ4284EY-T1_BE3 | 1.6200 | | 6 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4284 | MOSFET (Metalloxid) | 3.9W (TC) | 8-soic | - - - | 1 (unbegrenzt) | 742-SQ4284EY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 40V | 8a (TC) | 13,5 MOHM @ 7A, 10V | 2,5 V @ 250 ähm | 45nc @ 10v | 2200PF @ 25V | - - - | |||||||
| SQ2361Aees-T1_BE3 | 0,6700 | | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2361 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 2.8a (TC) | 4,5 V, 10 V. | 170 MOHM @ 2,4a, 10V | 2,5 V @ 250 ähm | 15 NC @ 10 V | ± 20 V | 620 PF @ 30 V | - - - | 2W (TC) | ||||||
| SI3458BDV-T1-BE3 | 0,9100 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3458 | MOSFET (Metalloxid) | 6-tsop | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 3,2a (TA), 4,1a (TC) | 4,5 V, 10 V. | 100MOHM @ 3.2a, 10V | 3v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 350 PF @ 30 V | - - - | 2W (TA), 3,3 W (TC) | ||||||
| IRFR9024TRPBF-BE3 | 1.2900 | | 9 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9024 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 8.8a (TC) | 10V | 280MOHM @ 5.3A, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 570 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
| IRF830APBF-BE3 | 1.5700 | | 973 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf830 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF830APBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 5a (TC) | 10V | 1,4ohm @ 3a, 10V | 4,5 V @ 250 ähm | 24 nc @ 10 v | ± 30 v | 620 PF @ 25 V. | - - - | 74W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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