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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Technologie | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHP080N60E-GE3 | 4.3900 |  | 958 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHP080N60E-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 35a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 227W (TC) | |
 | SUM60061EL-GE3 | 5.9300 | | 1489 | 0.00000000 | Vishay Siliconix | Trenchfet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sum60061el-GE3 | Ear99 | 8541.29.0095 | 800 | P-Kanal | 80 v | 150a (TC) | 4,5 V, 10 V. | 6.1MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 218 NC @ 10 V | ± 20 V | 9600 PF @ 40 V | - - - | 375W (TC) | |
 | SQJ180EP-T1_GE3 | 1.9300 | | 5507 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ180EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 248a (TC) | 10V | 3mohm @ 15a, 10V | 3,5 V @ 250 ähm | 117 NC @ 10 V | ± 20 V | 6645 PF @ 25 V. | - - - | 500W (TC) | |
 | SQJA16EP-T1_GE3 | 1.5800 | | 4 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 278a (TC) | 4,5 V, 10 V. | 3mohm @ 15a, 10V | 2,5 V @ 250 ähm | 84 NC @ 10 V | ± 20 V | 5485 PF @ 25 V. | - - - | 500W (TC) | ||
 | SQJQ144AER-T1_GE3 | 2.8300 | | 2 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 575a (TC) | 10V | 0,9 MOHM @ 20A, 10 V. | 3,5 V @ 250 ähm | 145 NC @ 10 V. | ± 20 V | 9020 PF @ 25 V. | - - - | 600W (TC) | ||
| Sum70042e-GE3 | 2.9900 | | 1291 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Streiflen | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sum70042e-GE3 | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 150a (TC) | 7,5 V, 10 V. | 4mohm @ 20a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 6490 PF @ 50 V | - - - | 278W (TC) | |
| SQJQ148ER-T1_GE3 | 2.7200 | | 2 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 372a (TC) | 10V | 1,5 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 102 NC @ 10 V | ± 20 V | 5750 PF @ 25 V. | - - - | 394W (TC) | ||
| SQJ174EP-T1_GE3 | 1.8800 | | 5474 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ174EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 293a (TC) | 10V | 2,9 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 81 NC @ 10 V | ± 20 V | 6111 PF @ 25 V. | - - - | 500W (TC) | |
 | SIHP5N80AE-GE3 | 1.5100 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHP5N80AE-GE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 4.4a (TC) | 10V | 1,35 Ohm @ 1,5a, 10 V. | 4v @ 250 ähm | 16,5 NC @ 10 V. | ± 30 v | 321 PF @ 100 V | - - - | 62,5W (TC) | |
 | Sidr220ep-t1-re3 | 3.3600 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 25 v | 92,8a (TA), 415a (TC) | 4,5 V, 10 V. | 0,58 MOHM @ 20A, 10 V. | 2,1 V @ 250 ähm | 200 nc @ 10 v | +16 V, -12v | 10850 PF @ 10 V. | - - - | 6,25W (TA), 415W (TC) | |||
 | SQJQ112E-T1_GE3 | 3.6600 | | 8398 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | 1 (unbegrenzt) | 742-SQJQ112E-T1_GE3DKR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 296a (TC) | 10V | 2,53 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 272 NC @ 10 V | ± 20 V | 15945 PF @ 25 V. | - - - | 600W (TC) | ||
| SIR574DP-T1-RE3 | 1.6500 | | 7670 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SIR574DP-T1-RE3CT | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 12,1a (TA), 48,1a (TC) | 7,5 V, 10 V. | 13,5 MOHM @ 10a, 10V | 4v @ 250 ähm | 48 nc @ 10 v | ± 20 V | 2300 PF @ 75 V | - - - | 5W (TA), 78W (TC) | ||
| SIDR104AEP-T1-RE3 | 3.0500 | | 8 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 21,1a (TA), 90,5a (TC) | 7,5 V, 10 V. | 6.1MOHM @ 15a, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3250 PF @ 50 V | - - - | 6,5 W (TA), 120 W (TC) | |||
 | SIHA15N80AEF-GE3 | 2.8100 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA15N80AEF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 6a (TC) | 10V | 350MOHM @ 6.5A, 10V | 4v @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1128 PF @ 100 V | - - - | 33W (TC) | ||
 | SIHG026N60EF-GE3 | 14.3000 | | 4124 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | Herunterladen | 1 (unbegrenzt) | 742-SIHG026N60EF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 95a (TC) | 10V | 26mohm @ 38a, 10V | 5 V @ 250 ähm | 227 NC @ 10 V | ± 30 v | 7926 PF @ 100 V | - - - | 521W (TC) | ||
 | SQS140ENW-T1_GE3 | 1.3000 | | 9264 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® 1212-8slw | MOSFET (Metalloxid) | Powerpak® 1212-8slw | Herunterladen | 1 (unbegrenzt) | 742-SQS140Enw-T1_GE3CT | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 214a (TC) | 10V | 2,53MOHM @ 10a, 10V | 3,5 V @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3111 PF @ 25 V | - - - | 197W (TC) | ||
| Sidr626lep-t1-re3 | 3.4000 | | 4213 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 48,7a (TA), 218a (TC) | 4,5 V, 10 V. | 1,5 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 135 NC @ 10 V | ± 20 V | 5900 PF @ 30 V | - - - | 7,5 W (TA), 150 W (TC) | |||
| SIR188LDP-T1-RE3 | 1.5700 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SIR188LDP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 25,8a (TA), 93,6a (TC) | 4,5 V, 10 V. | 3,75 MOHM @ 15a, 10V | 2,5 V @ 250 ähm | 52 NC @ 10 V | ± 20 V | 2300 PF @ 30 V | - - - | 5W (TA), 65,7W (TC) | ||
 | SIHH105N60EF-T1GE3 | 6.8600 | | 49 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHH105N60EF-T1GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 26a (TC) | 10V | 105mohm @ 13a, 10V | 5 V @ 250 ähm | 50 nc @ 10 v | ± 30 v | 2099 PF @ 100 V | - - - | 174W (TC) | |
 | SQA446CEJW-T1_GE3 | 0,6200 | | 38 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | 6-Powervdfn | MOSFET (Metalloxid) | Powerpak®SC-70W-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQA446CEJW-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 9a (TC) | 2,5 V, 4,5 V. | 17,5 MOHM @ 4,5A, 4,5 V. | 1,3 V @ 250 ähm | 10 NC @ 4,5 V. | ± 12 V | 910 PF @ 10 V | - - - | 13.6W (TC) | |
 | SIR4606DP-T1-GE3 | 1.2600 | | 14 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 10.5a (TA), 16a (TC) | 7,5 V, 10 V. | 18,5 MOHM @ 4A, 10V | 4v @ 250 ähm | 13,5 NC @ 10 V. | ± 20 V | 540 PF @ 30 V | - - - | 3,7W (TA), 31,2W (TC) | ||
 | SIHB055N60EF-GE3 | 6.4400 | | 8992 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB055N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 46a (TC) | 10V | 55mohm @ 26,5a, 10V | 5 V @ 250 ähm | 95 NC @ 10 V | ± 30 v | 3707 PF @ 100 V | - - - | 278W (TC) | |
 | SIA4265edj-t1-GE3 | 0,4200 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIA4265edj-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 7.8a (TA), 9A (TC) | 1,8 V, 4,5 V. | 32mohm @ 4a, 4,5 V. | 1V @ 250 ähm | 36 NC @ 8 V | ± 8 v | 1180 PF @ 0 v | - - - | 2,9W (TA), 15,6 W (TC) | |
 | SIHG24N80AEF-GE3 | 4.8700 | | 500 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHG24N80AEF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 800 V | 20A (TC) | 10V | 195mohm @ 10a, 10V | 4v @ 250 ähm | 90 nc @ 10 v | ± 30 v | 1889 PF @ 100 V | - - - | 208W (TC) | |
 | SISA14BDN-T1-GE3 | 0,7100 | | 14 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 21a (ta), 72a (TC) | 4,5 V, 10 V. | 5.38MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 22 NC @ 10 V. | +20V, -16v | 917 PF @ 15 V | - - - | 3,8 W (TA), 45W (TC) | ||
 | SISS588DN-T1-GE3 | 1.3600 | | 6289 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | MOSFET (Metalloxid) | Powerpak® 1212-8s | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SISS588DN-T1-GE3TR | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 80 v | 16,9a (TA), 58,1a (TC) | 7,5 V, 10 V. | 8mohm @ 10a, 10V | 4v @ 250 ähm | 28,5 NC @ 10 V. | ± 20 V | 1380 PF @ 40 V | - - - | 4,8W (TA), 56,8W (TC) | |
| SIR4602LDP-T1-RE3 | 0,9500 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 15,2a (TA), 52,1a (TC) | 4,5 V, 10 V. | 8.8mohm @ 10a, 10V | 2,5 V @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1185 PF @ 30 V | - - - | 3.6W (TA), 43W (TC) | ||
| SIR584DP-T1-RE3 | 1.5700 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 24,7a (TA), 100A (TC) | 7,5 V, 10 V. | 3,9 MOHM @ 15a, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 20 V | 2800 PF @ 40 V | - - - | 5W (TA), 83,3W (TC) | ||
 | SQA444CEJW-T1_GE3 | 0,4800 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® SC-70-6 | MOSFET (Metalloxid) | Powerpak®SC-70W-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 9a (TC) | 4,5 V, 10 V. | 39mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 9 NC @ 10 V. | ± 20 V | 530 PF @ 25 V. | - - - | 13.6W (TC) | ||
| SIR1309DP-T1-GE3 | 0,9400 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 19,1a (TA), 65,7a (TC) | 4,5 V, 10 V. | 7.3mohm @ 10a, 10V | 2,5 V @ 250 ähm | 87 NC @ 10 V | ± 25 V | 3250 PF @ 15 V | - - - | 4,8W (TA), 56,8W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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