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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SQS484CENW-T1_GE3 | 0,8600 |  | 7624 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | SQS484 | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQS484Cenw-t1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 16a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 2350 PF @ 25 V. | - - - | 62,5W (TC) | |||
 | SIR104ADP-T1-RE3 | 2.0700 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir104 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 18,8a (TA), 81a (TC) | 7,5 V, 10 V. | 6.1MOHM @ 15a, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3250 PF @ 50 V | - - - | 5.4W (TA), 100W (TC) | ||||
 | SIHP052N60EF-GE3 | 6.9500 | | 266 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP052 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 48a (TC) | 10V | 52mohm @ 23a, 10V | 5 V @ 250 ähm | 101 NC @ 10 V | ± 30 v | 3380 PF @ 100 V | - - - | 278W (TC) | ||||
 | SIZ980BDT-T1-GE3 | 1.6600 | | 16 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | SIZ980 | MOSFET (Metalloxid) | 3,8 W (TA), 20W (TC), 5W (TA), 66W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-Siz980bdt-T1-Ge3ct | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual), Schottky | 30V | 23,7a (TA), 54,8a (TC), 54,3a (TA), 197a (TC) | 4,39MOHM @ 15a, 10V, 1.06 MOHM @ 19A, 10V | 2,2 V @ 250 ähm | 18nc @ 10v, 79nc @ 10v | 790PF @ 15V, 3655PF @ 15V | - - - | |||||
 | Sizf914DT-T1-GE3 | 0,7095 | | 9526 | 0.00000000 | Vishay Siliconix | Powerpair®, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Sizf914 | MOSFET (Metalloxid) | 3,4 W (TA), 26,6 W (TC), 4W (TA), 60 W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-Sizf914DT-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 25 v | 23,5a (TA), 40A (TC), 52A (TA), 60A (TC) | 3,8 MOHM @ 10a, 10 V, 0,9 Mohm @ 10a, 10 V. | 2,4 V @ 250 UA, 2,2 V BEI 250 µA | 21nc @ 10v, 98nc @ 10v | 1050pf @ 10v, 4670pf @ 10v | - - - | |||||
 | SIHF540Strl-GE3 | 1.7622 | | 6432 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF540 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHF540Strl-GE3TR | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 28a (TC) | 10V | 77mohm @ 17a, 10V | 4v @ 250 ähm | 72 NC @ 10 V | ± 20 V | 1700 PF @ 25 V. | - - - | 3.7W (TA), 150W (TC) | |||
 | SIHFR9024TR-GE3 | 0,8800 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR9024 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 8.8a (TC) | 10V | 280MOHM @ 5.3A, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 570 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
 | SQJ418EP-T2_GE3 | 0,4560 | | 5155 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ418 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ418EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 48a (TC) | 10V | 14mohm @ 10a, 10V | 3,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1700 PF @ 25 V. | - - - | 68W (TC) | |||
| SIHFR9014-GE3 | 0,2527 | | 1723 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR9014 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHFR9014-GE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 5.1a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||
| SIHFR430ATRR-GE3 | 0,4263 | | 2810 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR430 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHFR430ATRR-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 500 V | 5a (TC) | 10V | 1,7ohm @ 3a, 10V | 4,5 V @ 250 ähm | 24 nc @ 10 v | ± 30 v | 490 PF @ 25 V. | - - - | 110W (TC) | |||
| SIHD3N50DT5-GE3 | 0,3563 | | 2148 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sihd3 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHD3N50DT5-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 500 V | 3a (TC) | 10V | 3,2OHM @ 1,5A, 10 V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 175 PF @ 100 V | - - - | 69W (TC) | |||
| SIHD3N50DT1-GE3 | 0,3563 | | 8575 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sihd3 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHD3N50DT1-GE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 500 V | 3a (TC) | 10V | 3,2OHM @ 1,5A, 10 V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 175 PF @ 100 V | - - - | 69W (TC) | |||
| SIHFZ48RS-GE3 | 1.0779 | | 7593 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHFZ48 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHFZ48RS-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 60 v | 50a (TC) | 10V | 18mohm @ 43a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 2400 PF @ 25 V. | - - - | 190W (TC) | |||
| SQD50P04-09L_T4GE3 | 0,6985 | | 5834 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD50P04-09L_T4GE3TR | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 40 v | 50a (TC) | 4,5 V, 10 V. | 9.4mohm @ 17a, 10V | 2,5 V @ 250 ähm | 155 NC @ 10 V | ± 20 V | 6675 PF @ 20 V | - - - | 136W (TC) | |||
| SIHFR220TRL-GE3 | 0,7200 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR220 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 800MOHM @ 2,9a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
| SQD50P03-07-T4_GE3 | 0,6985 | | 4339 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD50P03-07-T4_GE3TR | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 7mohm @ 20a, 10V | 2,5 V @ 250 ähm | 146 NC @ 10 V. | ± 20 V | 5490 PF @ 25 V. | - - - | 136W (TC) | |||
| SQJ474EP-T2_GE3 | 0,3784 | | 4806 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ474 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ474EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 26a (TC) | 4,5 V, 10 V. | 30mohm @ 10a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1100 PF @ 25 V. | - - - | 45W (TC) | |||
| SQD25N15-52-T4_GE3 | 0,6985 | | 8022 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD25 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD25N15-52-T4_GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 25a (TC) | 10V | 52mohm @ 15a, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2200 PF @ 25 V. | - - - | 107W (TC) | |||
| SIHP068N60EF-GE3 | 5.4900 | | 3291 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP068 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-SIHP068N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 41a (TC) | 10V | 68mohm @ 16a, 10V | 5 V @ 250 ähm | 77 NC @ 10 V | ± 30 v | 2628 PF @ 100 V | - - - | 250 W (TC) | ||||
| SQJA81EP-T1_GE3 | 2.2400 | | 8879 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja81 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA81EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 80 v | 46a (TC) | 4,5 V, 10 V. | 17.3mohm @ 10a, 10V | 2,5 V @ 250 ähm | 80 nc @ 10 v | ± 20 V | 5900 PF @ 25 V. | - - - | 68W (TC) | ||||
| IRF9Z30PBF-BE3 | 2.6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF9Z30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9Z30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 50 v | 18a (TC) | 10V | 140Mohm @ 9.3a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 20 V | 900 PF @ 25 V. | - - - | 74W (TC) | ||||
| IRF740PBF-BE3 | 2.0400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF740 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF740PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 10a (TC) | 10V | 550MOHM @ 5.3A, 10V | 4v @ 250 ähm | 63 NC @ 10 V | ± 20 V | 1400 PF @ 25 V. | - - - | 125W (TC) | ||||
| IRF840PBF-BE3 | 1.9400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF840 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF840PBF-BE3 | Ear99 | 8541.29.0095 | 100 | N-Kanal | 500 V | 8a (TC) | 10V | 850MOHM @ 4.8a, 10V | 4v @ 250 ähm | 63 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | ||||
| IRFBG30PBF-BE3 | 2.5600 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBG30 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBG30PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 1000 v | 3.1a (TC) | 10V | 5ohm @ 1,9a, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 980 PF @ 25 V. | - - - | 125W (TC) | ||||
| SQJ912AEP-T2_BE3 | - - - | | 8259 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ912 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | - - - | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 9,3mohm @ 9.7a, 10V | 2,5 V @ 250 ähm | 38nc @ 10v | 1835PF @ 20V | - - - | ||||||||
| IRL640PBF-BE3 | 2.4800 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRL640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRL640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 17a (TC) | 4V, 5V | 180Mohm @ 10a, 5V | 2v @ 250 ähm | 66 NC @ 5 V. | ± 10 V | 1800 PF @ 25 V. | - - - | 125W (TC) | ||||
| IRF640PBF-BE3 | 1.9900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF640 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRF640PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | ||||
 | IRFBC30APBF-BE3 | 3.0700 | | 7668 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC30 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRFBC30APBF-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 3.6a (TC) | 10V | 2.2ohm @ 2.2a, 10 V. | 4,5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 74W (TC) | ||||
| SUD50P08-25L-BE3 | 2.6900 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud50 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 80 v | 12,5a (TA), 50A (TC) | 4,5 V, 10 V. | 25,2mohm @ 12,5a, 10V | 3v @ 250 ähm | 160 nc @ 10 v | ± 20 V | 4700 PF @ 40 V. | - - - | 8.3W (TA), 136W (TC) | |||||
| IRFB11N50APBF-BE3 | 2.5100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFB11 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFB11N50APBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 11a (TC) | 10V | 520mohm @ 6.6a, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1423 PF @ 25 V. | - - - | 170W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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