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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SQJ164ELP-T1_GE3 | 1.1600 |  | 5279 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ164ELP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 75a (TC) | 4,5 V, 10 V. | 12mohm @ 15a, 10V | 2,5 V @ 250 ähm | 57 NC @ 10 V | ± 20 V | 3100 PF @ 25 V. | - - - | 187W (TC) | ||||
 | SIRS700DP-T1-RE3 | 4.4200 | | 8520 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Abgebrochen bei Sic | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 30a (ta), 127a (TC) | 7,5 V, 10 V. | 3,5 MOHM @ 20A, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 20 V | 5950 PF @ 50 V | - - - | 7.4W (TA), 132W (TC) | ||||||
 | SQJ912AEP-T2_GE3 | - - - | | 4346 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ912 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 742-SQJ912AEP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 9,3mohm @ 9.7a, 10V | 2,5 V @ 250 ähm | 38nc @ 10v | 1835PF @ 20V | - - - | |||||||
| SQJ128ELP-T1_GE3 | 1.6300 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sqj128elp-t1_ge3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 437a (TC) | 4,5 V, 10 V. | 1,15 MOHM @ 15a, 10V | 2,2 V @ 250 ähm | 150 NC @ 10 V. | ± 20 V | 7315 PF @ 25 V. | - - - | 500W (TC) | ||||
 | SQ7415CENW-T1_GE3 | 0,9700 | | 9258 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 16a (TC) | 4,5 V, 10 V. | 65mohm @ 5.7a, 10V | 2,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1385 PF @ 25 V. | - - - | 53W (TC) | |||||
 | SIHB5N80AE-GE3 | 1.6100 | | 840 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB5N80AE-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 4.4a (TC) | 10V | 1,35 Ohm @ 1,5a, 10 V. | 4v @ 250 ähm | 16,5 NC @ 10 V. | ± 30 v | 321 PF @ 100 V | - - - | 62,5W (TC) | ||||
 | SIHP15N80AEF-GE3 | 2.6000 | | 2 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHP15N80AEF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 13a (TC) | 10V | 350MOHM @ 6.5A, 10V | 4v @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1128 PF @ 100 V | - - - | 156W (TC) | ||||
| SIR122LDP-T1-RE3 | 1.2300 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIR122LDP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 17,2a (TA), 62,3a (TC) | 4,5 V, 10 V. | 7.35MOHM @ 15a, 10V | 2,5 V @ 250 ähm | 52 NC @ 10 V | ± 20 V | 2380 PF @ 40 V. | - - - | 5W (TA), 65,7W (TC) | ||||
 | SI4151DY-T1-GE3 | 1.2400 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 15,2a (TA), 20,5a (TC) | 4,5 V, 10 V. | 7,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 87 NC @ 10 V | ± 25 V | 3250 PF @ 15 V | - - - | 3.1W (TA), 5,6W (TC) | ||||||
 | SQA410CEJW-T1_GE3 | 0,4300 | | 9 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 Dual | MOSFET (Metalloxid) | Powerpak® SC-70-6 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQA410CEJW-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 7.8a (TC) | 1,8 V, 4,5 V. | 28mohm @ 5a, 4,5 V. | 1,1 V @ 250 ähm | 8 NC @ 4,5 V. | ± 8 v | 525 PF @ 10 V. | - - - | 13.6W (TC) | ||||
 | IRFR9120PBF-BE3 | 0,8080 | | 2691 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9120 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR9120PBF-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 100 v | 5.6a (TC) | 10V | 600mohm @ 3.4a, 10 V. | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 390 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
 | SI2318CDS-T1-BE3 | 0,5000 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2318CDS-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 4,3a (TA), 5,6a (TC) | 4,5 V, 10 V. | 42mohm @ 4.3a, 10V | 2,5 V @ 250 ähm | 9 NC @ 10 V. | ± 20 V | 340 PF @ 20 V | - - - | 1,25W (TA), 2,1W (TC) | |||||
 | SQJ459EP-T2_BE3 | 1.2800 | | 4182 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ459EP-T2_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 52a (TC) | 4,5 V, 10 V. | 18mohm @ 3,5a, 10V | 2,5 V @ 250 ähm | 108 NC @ 10 V | ± 20 V | 4586 PF @ 30 V | - - - | 83W (TC) | |||||
 | SIDR610DP-T1-RE3 | 2.5200 | | 5413 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 8,9a (TA), 39,6a (TC) | 7,5 V, 10 V. | 31.9mohm @ 10a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1380 PF @ 100 V | - - - | 6,25W (TA), 125W (TC) | ||||||
 | SIHB28N60EF-T1-GE3 | 6.2600 | | 790 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 28a (TC) | 10V | 123mohm @ 14a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 30 v | 2714 PF @ 100 V | - - - | 250 W (TC) | ||||||
 | SQJB68EP-T1_BE3 | 0,8900 | | 7342 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB68 | MOSFET (Metalloxid) | 27W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJB68EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 100V | 11a (TC) | 92mohm @ 4a, 10V | 2,5 V @ 250 ähm | 8nc @ 10v | 280pf @ 25v | - - - | ||||||
| SQJB46ELP-T1_BE3 | 1.2200 | | 1432 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB46 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-sqjb46elp-t1_be3tr | Ear99 | 8541.21.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 8mohm @ 8a, 10V | 2,2 V @ 250 ähm | 40nc @ 10v | 2100pf @ 25v | - - - | ||||||
| SIHL620S-GE3 | 0,9100 | | 972 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 5.2a (TC) | 4 V, 10V | 800MOHM @ 3.1a, 10V | 2v @ 250 ähm | 16 NC @ 5 V | ± 10 V | 360 PF @ 25 V. | - - - | 3.1W (TA), 50W (TC) | ||||||
| SQJB80EP-T1_BE3 | 1.1900 | | 9504 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB80 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJB80EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 80V | 30a (TC) | 19Mohm @ 8a, 10V | 2,5 V @ 250 ähm | 32nc @ 10v | 1400pf @ 25v | - - - | ||||||
 | SI3459BDV-T1-BE3 | 0,8300 | | 967 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 2,2a (TA), 2,9a (TC) | 4,5 V, 10 V. | 216mohm @ 2,2a, 10V | 3v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 350 PF @ 30 V | - - - | 2W (TA), 3,3 W (TC) | ||||||
 | SIHA15N50E-GE3 | 2.2100 | | 9714 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA15N50E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 14,5a (TC) | 10V | 280 MOHM @ 7,5A, 10V | 4v @ 250 ähm | 66 NC @ 10 V | ± 30 v | 1162 PF @ 100 V | - - - | 33W (TC) | |||||
 | SI3493BDV-T1-BE3 | 0,9600 | | 11 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3493BDV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 7a (ta), 8a (TC) | 1,8 V, 4,5 V. | 27,5 MOHM @ 7A, 4,5 V. | 900 MV @ 250 ähm | 43,5 NC @ 5 V. | ± 8 v | 1805 PF @ 10 V. | - - - | 2.08W (TA), 2.97W (TC) | |||||
 | SIHP7N60E-Be3 | 2.0900 | | 1036 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 7a (TC) | 10V | 600 MOHM @ 3,5A, 10 V. | 4v @ 250 ähm | 40 nc @ 10 v | ± 30 v | 680 PF @ 100 V | - - - | 78W (TC) | ||||||
| SI2315BDS-T1-BE3 | 0,5400 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 12 v | 3a (ta) | 1,8 V, 4,5 V. | 50 MOHM @ 3,85a, 4,5 V. | 900 MV @ 250 ähm | 15 NC @ 4,5 V | ± 8 v | 715 PF @ 6 V | - - - | 750 MW (TA) | ||||||
| SIHA25N60EFL-GE3 | 4.7300 | | 997 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 25a (TC) | 10V | 146mohm @ 12.5a, 10V | 5 V @ 250 ähm | 75 NC @ 10 V | ± 30 v | 2274 PF @ 100 V | - - - | 39W (TC) | ||||||
| SQJ457EP-T2_GE3 | 0,9900 | | 9575 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 36a (TC) | 4,5 V, 10 V. | 25mohm @ 10a, 10V | 2,5 V @ 250 ähm | 100 nc @ 10 v | ± 20 V | 3400 PF @ 25 V. | - - - | 68W (TC) | ||||||
| SIHF9Z34Strl-GE3 | 1.6000 | | 782 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHF9Z34Strl-GE3TR | Ear99 | 8541.29.0095 | 800 | P-Kanal | 60 v | 18a (TC) | 10V | 140Mohm @ 11a, 10V | 4v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1100 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | |||||
| SQJ910AEP-T1_BE3 | 1.2800 | | 1843 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ910 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-sqj910aep-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 30a (TC) | 7mohm @ 12a, 10V | 2,5 V @ 250 ähm | 39nc @ 10v | 1869Pf @ 15V | - - - | ||||||
| SIHB120N60E-T5-GE3 | 5.2400 | | 795 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 25a (TC) | 10V | 120Mohm @ 12a, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 1562 PF @ 100 V | - - - | 179W (TC) | ||||||
| IRFR224TRPBF-BE3 | 0,7088 | | 8112 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR224 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 742-IRFR224TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 250 V | 3.8a (TC) | 10V | 1,1OHM @ 2,3a, 10 V | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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