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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | IRLR024PBF | 1.6800 | ![]() | 6921 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRLR024 | MOSFET (Metalloxid) | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 75 | N-Kanal | 60 v | 14a (TC) | 4V, 5V | 100MOHM @ 8.4a, 5V | 2v @ 250 ähm | 18 NC @ 5 V. | ± 10 V | 870 PF @ 25 V. | - - - | 42W (TC) | |||||
![]() | SIRC06DP-T1-GE3 | 0,3733 | ![]() | 8732 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIRC06 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 32A (TA), 60A (TC) | 4,5 V, 10 V. | 2,7 MOHM @ 15a, 10V | 2,1 V @ 250 ähm | 58 NC @ 10 V | +20V, -16v | 2455 PF @ 15 V | Schottky Diode (Körper) | 5W (TA), 50W (TC) | |||||
![]() | SQR40N10-25_GE3 | 2.3900 | ![]() | 4340 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-4, dpak (3 Leads + Tab) | SQR40 | MOSFET (Metalloxid) | To-252 (dpak) Umgekehrter Bleii | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 40a (TC) | 4,5 V, 10 V. | 25mohm @ 40a, 10V | 2,5 V @ 250 ähm | 70 nc @ 10 v | ± 20 V | 3380 PF @ 25 V. | - - - | 136W (TC) | |||||
![]() | SUM110N04-05H-E3 | - - - | ![]() | 6719 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Sum110 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 110a (TC) | 10V | 5.3mohm @ 30a, 10V | 5 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 6700 PF @ 25 V. | - - - | 3,75W (TA), 150W (TC) | ||||
![]() | SIHB22N60S-GE3 | - - - | ![]() | 3462 | 0.00000000 | Vishay Siliconix | S | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB22 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 22a (TC) | 10V | 190mohm @ 11a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 30 v | 2810 PF @ 25 V. | - - - | 250 W (TC) | |||||
![]() | Sia907edj-t1-GE3 | - - - | ![]() | 9300 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | - - - | - - - | - - - | SIA907 | - - - | - - - | - - - | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - | |||||||
![]() | SQM120N04-1M7L_GE3 | 3.4300 | ![]() | 3976 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM120 | MOSFET (Metalloxid) | To-263 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 120a (TC) | 4,5 V, 10 V. | 1,7 MOHM @ 30a, 10V | 2,5 V @ 250 ähm | 285 NC @ 10 V | ± 20 V | 14606 PF @ 20 V | - - - | 375W (TC) | |||||
![]() | SQJ488EP-T1_GE3 | 1.5800 | ![]() | 4062 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ488 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 42a (TC) | 4,5 V, 10 V. | 21mohm @ 7.4a, 10V | 2,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 979 PF @ 25 V. | - - - | 83W (TC) | |||||
![]() | SI4923DY-T1-E3 | - - - | ![]() | 2788 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4923 | MOSFET (Metalloxid) | 1.1W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 2 p-kanal (dual) | 30V | 6.2a | 21mohm @ 8.3a, 10V | 3v @ 250 ähm | 70NC @ 10V | - - - | Logikpegel -tor | ||||||
![]() | SIHG22N60E-E3 | 4.4500 | ![]() | 5021 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG22 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | SIHG22N60EE3 | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 21a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 86 NC @ 10 V | ± 30 v | 1920 PF @ 100 V | - - - | 227W (TC) | ||||
![]() | SI2327D-T1-E3 | - - - | ![]() | 2232 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2327 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 200 v | 380 Ma (TA) | 6 V, 10V | 2,35OHM @ 500 mA, 10V | 4,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 510 PF @ 25 V. | - - - | 750 MW (TA) | ||||
![]() | SI8469DB-T2-E1 | - - - | ![]() | 6714 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 4-uFbga | SI8469 | MOSFET (Metalloxid) | 4-microfoot | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 4.6a (TA) | 4,5 v | 64mohm @ 1,5a, 4,5 V. | 800 MV @ 250 ähm | 17 NC @ 4,5 V. | ± 5 V | 900 PF @ 4 V. | - - - | 780 MW (TA), 1,8W (TC) | ||||
![]() | SI5441DC-T1-E3 | - - - | ![]() | 4826 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-smd, Flaches Blei | SI5441 | MOSFET (Metalloxid) | 1206-8 Chipfet ™ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.9a (TA) | 2,5 V, 4,5 V. | 55mohm @ 3,9a, 4,5 V. | 1,4 V @ 250 ähm | 22 NC @ 4,5 V. | ± 12 V | - - - | 1,3W (TA) | |||||
![]() | SI6968DQ-T1-GE3 | 0,7800 | ![]() | 15 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | SI6968 | MOSFET (Metalloxid) | 1W | 8-tssop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 5.2a | 22mohm @ 6,5a, 4,5 V. | 1,6 V @ 250 ähm | 18nc @ 4,5 v | - - - | Logikpegel -tor | ||||||
![]() | SI7328DN-T1-E3 | 0,9923 | ![]() | 8663 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -50 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7328 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 35a (TC) | 4,5 V, 10 V. | 6.6mohm @ 18.9a, 10V | 1,5 V @ 250 ähm | 31,5 NC @ 4,5 V. | ± 12 V | 2610 PF @ 15 V | - - - | 3,78W (TA), 52W (TC) | |||||
![]() | SI1972DH-T1-GE3 | - - - | ![]() | 5253 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1972 | MOSFET (Metalloxid) | 1.25W | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 1.3a | 225mohm @ 1,3a, 10V | 2,8 V @ 250 ähm | 2,8nc @ 10v | 75PF @ 15V | - - - | ||||||
![]() | SI2369DS-T1-GE3 | 0,4200 | ![]() | 33 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2369 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 7.6a (TC) | 4,5 V, 10 V. | 29mohm @ 5.4a, 10V | 2,5 V @ 250 ähm | 36 NC @ 10 V | ± 20 V | 1295 PF @ 15 V | - - - | 1,25W (TA), 2,5W (TC) | ||||
![]() | SQ9945AEY-T1-E3 | - - - | ![]() | 1369 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ9945 | MOSFET (Metalloxid) | 2.4W | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 60 v | 3.7a | 80MOHM @ 3.7a, 10V | 3v @ 250 ähm | 20nc @ 10v | - - - | Logikpegel -tor | ||||||
![]() | SI7911DN-T1-GE3 | - - - | ![]() | 5080 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SI7911 | MOSFET (Metalloxid) | 1.3W | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 20V | 4.2a | 51MOHM @ 5,7A, 4,5 V. | 1V @ 250 ähm | 15nc @ 4,5 V | - - - | Logikpegel -tor | ||||||
![]() | SI7413DN-T1-E3 | - - - | ![]() | 1497 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SI7413 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 8.4a (ta) | 1,8 V, 4,5 V. | 15mohm @ 13.2a, 4,5 V. | 1V @ 400 ähm | 51 NC @ 4,5 V. | ± 8 v | - - - | 1,5 W (TA) | |||||
![]() | SI4346DY-T1-E3 | - - - | ![]() | 7317 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4346 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 5.9a (TA) | 2,5 V, 10 V. | 23mohm @ 8a, 10V | 2v @ 250 ähm | 10 NC @ 4,5 V. | ± 12 V | - - - | 1.31W (TA) | ||||||
![]() | SI4390DY-T1-E3 | - - - | ![]() | 2263 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4390 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 8.5a (TA) | 4,5 V, 10 V. | 9,5 MOHM @ 12,5A, 10V | 2,8 V @ 250 ähm | 15 NC @ 4,5 V | ± 20 V | - - - | 1.4W (TA) | ||||||
![]() | SI7216DN-T1-E3 | 1.6600 | ![]() | 5455 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -50 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SI7216 | MOSFET (Metalloxid) | 20.8W | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 6a | 32mohm @ 5a, 10V | 3v @ 250 ähm | 19nc @ 10v | 670PF @ 20V | - - - | |||||||
![]() | IRFBC40LCSTRL | - - - | ![]() | 3147 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRFBC40 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 6.2a (TC) | 10V | 1,2OHM @ 3,7A, 10 V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 30 v | 1100 PF @ 25 V. | - - - | 125W (TC) | |||||
![]() | SI1905BDH-T1-E3 | - - - | ![]() | 1322 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1905 | MOSFET (Metalloxid) | 357 MW | SC-70-6 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 8v | 630 Ma | 542mohm @ 580 mA, 4,5 V. | 1V @ 250 ähm | 1,5nc @ 4,5 V | 62pf @ 4v | Logikpegel -tor | ||||||
![]() | IRLR024TRR | - - - | ![]() | 9098 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRLR024 | MOSFET (Metalloxid) | D-Pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 14a (TC) | 4V, 5V | 100MOHM @ 8.4a, 5V | 2v @ 250 ähm | 18 NC @ 5 V. | ± 10 V | 870 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||||
![]() | V30419-T1-GE3 | - - - | ![]() | 4403 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Veraltet | V30419 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 3.000 | |||||||||||||||||||||
![]() | SI4116DY-T1-GE3 | 1.2500 | ![]() | 2837 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4116 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 25 v | 18a (TC) | 2,5 V, 10 V. | 8.6mohm @ 10a, 10V | 1,4 V @ 250 ähm | 56 NC @ 10 V | ± 12 V | 1925 PF @ 15 V | - - - | 2,5 W (TA), 5W (TC) | |||||
![]() | IRFZ14STRLPBF | 0,9500 | ![]() | 9473 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Irfz14 | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 10a (TC) | 10V | 200mohm @ 6a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 300 PF @ 25 V. | - - - | 3,7W (TA), 43W (TC) | |||||
![]() | SI4090DY-T1-GE3 | 1,5000 | ![]() | 4820 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4090 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 19,7a (TC) | 6 V, 10V | 10Mohm @ 15a, 10V | 3,3 V @ 250 ähm | 69 NC @ 10 V | ± 20 V | 2410 PF @ 50 V | - - - | 3,5 W (TA), 7,8W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus