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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHG21N80AEF-GE3 | 3.3700 |  | 494 | 0.00000000 | Vishay Siliconix | EF | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHG21N80AEF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 800 V | 16.3a (TC) | 10V | 250 MOHM @ 8.5A, 10V | 4v @ 250 ähm | 71 NC @ 10 V | ± 30 v | 1511 PF @ 100 V | - - - | 179W (TC) | ||||
 | SQSA70CENW-T1_GE3 | 0,9900 | | 18 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 18a (TC) | 10V | 68,5 MOHM @ 7A, 10V | 3,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 540 PF @ 25 V. | - - - | 62,5W (TC) | |||||
 | SQW33N65EF-GE3 | 6.1900 | | 519 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, e | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQW33N65EF-GE3 | Ear99 | 8541.29.0095 | 480 | N-Kanal | 650 V | 34a (TC) | 10V | 109mohm @ 16.5a, 10V | 4v @ 250 ähm | 173 NC @ 10 V | ± 30 v | 3972 PF @ 100 V | - - - | 375W (TC) | ||||
 | SQD70140EL_GE3 | 1.2100 | | 9 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD70140 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 30a (TC) | 4,5 V, 10 V. | 15mohm @ 30a, 10V | 2,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 2100 PF @ 25 V | - - - | 71W (TC) | ||||
| SQD90P04-9M4L_GE3 | 2.7600 | | 88 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD90 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 40 v | 90a (TC) | 4,5 V, 10 V. | 9.4mohm @ 17a, 10V | 2,5 V @ 250 ähm | 155 NC @ 10 V | ± 20 V | 6675 PF @ 20 V | - - - | 136W (TC) | ||||
 | SQJB70EP-T1_GE3 | 0,9600 | | 8970 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB70 | MOSFET (Metalloxid) | 27W (TC) | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 100V | 11.3a (TC) | 95mohm @ 4a, 10V | 3,5 V @ 250 ähm | 7nc @ 10v | 220pf @ 25v | - - - | ||||||
 | Sira32DP-T1-RE3 | 1.0600 | | 5641 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sira32 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 25 v | 60a (TC) | 4,5 V, 10 V. | 1,2 Mohm @ 15a, 10 V | 2,2 V @ 250 ähm | 83 NC @ 10 V | +16 V, -12v | 4450 PF @ 10 V. | - - - | 65.7W (TC) | ||||
 | SQ4483EY-T1_GE3 | 1.5100 | | 5274 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4483 | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 8.5Mohm @ 10a, 10V | 2,5 V @ 250 ähm | 113 NC @ 10 V | ± 20 V | 4500 PF @ 15 V | - - - | 7W (TC) | |||||
 | SQ7415aenw-t1_GE3 | - - - | | 3682 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SQ7415 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 16a (TC) | 4,5 V, 10 V. | 65mohm @ 5.7a, 10V | 2,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1385 PF @ 25 V. | - - - | 53W (TC) | ||||
 | SQJQ960EL-T1_GE3 | 2.4400 | | 5774 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 Dual | SQJQ960 | MOSFET (Metalloxid) | 71W | Powerpak® 8 x 8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | 2 n-kanal (dual) | 60 v | 63a (TC) | 9mohm @ 10a, 10V | 2,5 V @ 250 ähm | 24nc @ 10v | 1950pf @ 25v | - - - | ||||||
 | SQM100N02-3M5L_GE3 | 2.4700 | | 7284 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM100 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 20 v | 100a (TC) | 4,5 V, 10 V. | 3,5 MOHM @ 30a, 10V | 2,5 V @ 250 ähm | 110 nc @ 10 v | ± 20 V | 5500 PF @ 10 V. | - - - | 150W (TC) | ||||
| SQS405enw-t1_GE3 | 1.1100 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Lets Kaufen | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SQS405 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 16a (TC) | 2,5 V, 4,5 V. | 20mohm @ 13,5a, 4,5 V. | 1V @ 250 ähm | 75 NC @ 8 V | ± 8 v | 2650 PF @ 6 V. | - - - | 39W (TC) | ||||
 | Sihu2N80E-GE3 | 0,6689 | | 4396 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Sihu2 | MOSFET (Metalloxid) | To-251aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 800 V | 2.8a (TC) | 10V | 2,75OHM @ 1a, 10V | 4v @ 250 ähm | 19,6 NC @ 10 V. | ± 30 v | 315 PF @ 100 V | - - - | 62,5W (TC) | ||||
 | V30431-T1-GE3 | - - - | | 4292 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Veraltet | V30431 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 3.000 | ||||||||||||||||||||
| V30443-T1-GE3 | - - - | | 4810 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Veraltet | V30443 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Veraltet | 0000.00.0000 | 3.000 | ||||||||||||||||||||
| SI4850BDY-T1-GE3 | 0,9800 | | 7873 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4850 | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 8,4a (TA), 11,3a (TC) | 4,5 V, 10 V. | 19,5 MOHM @ 10a, 10V | 2,8 V @ 250 ähm | 17 NC @ 10 V | ± 20 V | 790 PF @ 30 V | - - - | 2,5 W (TA), 4,5W (TC) | ||||
| SIR606BDP-T1-RE3 | 1.4600 | | 13 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir606 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 10.9a (TA), 38,7a (TC) | 7,5 V, 10 V. | 17,4mohm @ 10a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1470 PF @ 50 V | - - - | 5W (TA), 62,5W (TC) | ||||
| SQJ946EP-T1_GE3 | 0,9100 | | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ946 | MOSFET (Metalloxid) | 27W | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 15a (TC) | 33mohm @ 7a, 10V | 2,5 V @ 250 ähm | 20nc @ 10v | 600PF @ 25V | - - - | ||||||
 | SQJQ410EL-T1_GE3 | 3.0300 | | 780 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | SQJQ410 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 135a (TC) | 4,5 V, 10 V. | 3,4mohm @ 20a, 10V | 2,5 V @ 250 ähm | 150 NC @ 10 V. | ± 20 V | 7350 PF @ 25 V. | - - - | 136W (TC) | ||||
 | SQJA00EP-T1_GE3 | 0,9800 | | 2003 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja00 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 30a (TC) | 10V | 13mohm @ 10a, 10V | 3,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1700 PF @ 25 V. | - - - | 48W (TC) | ||||
| SQ4080EY-T1_GE3 | 1.3300 | | 23 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4080 | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 150 v | 18a (TC) | 10V | 85mohm @ 10a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1590 PF @ 75 V | - - - | 7.1W (TC) | ||||
 | SIHG15N60E-GE3 | 3.3200 | | 7640 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG15 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 15a (TC) | 10V | 280mohm @ 8a, 10V | 4v @ 250 ähm | 78 NC @ 10 V | ± 30 v | 1350 PF @ 100 V | - - - | 180W (TC) | ||||
| SIHG47N60AE-GE3 | 7.7900 | | 3 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG47 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 43a (TC) | 10V | 65mohm @ 24a, 10V | 4v @ 250 ähm | 182 NC @ 10 V. | ± 30 v | 3600 PF @ 100 V | - - - | 313W (TC) | ||||
 | SIHP22N60AE-GE3 | 1.9830 | | 8658 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP22 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 20A (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 96 NC @ 10 V | ± 30 v | 1451 PF @ 100 V | - - - | 179W (TC) | ||||
 | SIR616DP-T1-GE3 | 1.4800 | | 5061 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir616 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 20,2a (TC) | 7,5 V, 10 V. | 50,5 MOHM @ 10a, 10V | 4v @ 250 ähm | 28 NC @ 7,5 V. | ± 20 V | 1450 PF @ 100 V | - - - | 52W (TC) | ||||
| SIR624DP-T1-GE3 | 1.2000 | | 5356 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir624 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 18,6a (TC) | 7,5 V, 10 V. | 60MOHM @ 10a, 10V | 4v @ 250 ähm | 23 NC @ 7,5 V. | ± 20 V | 1110 PF @ 100 V | - - - | 52W (TC) | ||||
 | SIS435DNT-T1-GE3 | 0,7900 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SIS435 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 30a (TC) | 1,8 V, 4,5 V. | 5.4mohm @ 13a, 4,5 V. | 900 MV @ 250 ähm | 180 nc @ 8 v | ± 8 v | 5700 PF @ 10 V. | - - - | 3.7W (TA), 39W (TC) | ||||
 | SIHP6N40D-GE3 | 1.1400 | | 63 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP6 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 6a (TC) | 10V | 1ohm @ 3a, 10 V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 311 PF @ 100 v | - - - | 104W (TC) | ||||
| SIHP8N50D-GE3 | 1.4000 | | 280 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP8 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 8.7a (TC) | 10V | 850Mohm @ 4a, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 30 v | 527 PF @ 100 V | - - - | 156W (TC) | ||||
| SI7456DDP-T1-GE3 | 1.6700 | | 9553 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7456 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 27,8a (TC) | 4,5 V, 10 V. | 23mohm @ 10a, 10V | 2,8 V @ 250 ähm | 29,5 NC @ 10 V. | ± 20 V | 900 PF @ 50 V | - - - | 5W (TA), 35,7W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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