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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SI4056ADY-T1-GE3 | 0,8800 |  | 2714 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4056 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 5,9a (TA), 8,3a (TC) | 29.2mohm @ 5.9a, 10V | 2,5 V @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1330 PF @ 50 V | - - - | 2,5 W (TA), 5W (TC) | ||||||
 | IRFBC40LCPBF-BE3 | 4.3900 | | 846 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRFBC40 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBC40LCPBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 6.2a (TC) | 1,2OHM @ 3,7A, 10 V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 30 v | 1100 PF @ 25 V. | - - - | 125W (TC) | ||||||
| IRF620PBF-BE3 | 1.1700 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf620 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF620PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 5.2a (TC) | 800MOHM @ 3.1a, 10V | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 50W (TC) | ||||||
| SIHP12N60E-Be3 | 2.6900 | | 475 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP12 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-SIHP12N60E-Be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 12a (TC) | 380Mohm @ 6a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 937 PF @ 100 V | - - - | 147W (TC) | ||||||
 | IRFR010PBF-BE3 | 1.4700 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR010 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR010PBF-BE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 50 v | 8.2a (TC) | 200mohm @ 4.6a, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 20 V | 250 PF @ 25 V. | - - - | 25W (TC) | ||||||
| IRL520PBF-BE3 | 1.4600 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRL520 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742 -irl520pbf -be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 9.2a (TC) | 270 MOHM @ 5,5a, 5V | 2v @ 250 ähm | 12 NC @ 5 V | ± 10 V | 490 PF @ 25 V. | - - - | 60 W (TC) | ||||||
 | SQJ211ELP-T1_GE3 | 1.6100 | | 9037 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ211 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 100 v | 33.6a (TC) | 30mohm @ 8a, 10V | 2,5 V @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 3800 PF @ 25 V. | - - - | 68W (TC) | ||||||
 | SI1317DL-T1-BE3 | 0,4600 | | 6467 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -50 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | SI1317 | MOSFET (Metalloxid) | SC-70-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI1317DL-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 1,4a (TA), 1,4a (TC) | 150 MOHM @ 1,4a, 4,5 V. | 800 MV @ 250 ähm | 6,5 NC @ 4,5 V. | ± 8 v | 272 PF @ 10 V | - - - | 400 MW (TA), 500 MW (TC) | |||||
| IRFBE20PBF-BE3 | 1.5700 | | 985 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irfbe20 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFBE20PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 1,8a (TC) | 6,5OHM @ 1,1a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 530 PF @ 25 V. | - - - | 54W (TC) | ||||||
 | SI1416EDH-T1-BE3 | 0,4700 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1416 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 3,9a (TA), 3,9a (TC) | 58mohm @ 3.1a, 10V | 1,4 V @ 250 ähm | 12 NC @ 10 V | ± 12 V | - - - | 1,56W (TA), 2,8 W (TC) | |||||||
| IRLZ44PBF-BE3 | 2.8800 | | 647 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRLZ44 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742 -irlz44pbf -be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 50a (TC) | 28mohm @ 31a, 5v | 2v @ 250 ähm | 66 NC @ 5 V. | ± 10 V | 3300 PF @ 25 V. | - - - | 150W (TC) | ||||||
| SI1308EDL-T1-BE3 | 0,4600 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | SI1308 | MOSFET (Metalloxid) | SC-70-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 1,5a (TA), 1,4a (TC) | 132mohm @ 1,4a, 10V | 1,5 V @ 250 ähm | 4.1 nc @ 10 v | ± 12 V | 105 PF @ 15 V | - - - | 400 MW (TA), 500 MW (TC) | ||||||
| IRFR120PBF-BE3 | 1.2300 | | 5 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR120 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR120PBF-BE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 100 v | 7.7a (TC) | 270 MOHM @ 4,6a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 20 V | 360 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
| IRL620PBF-BE3 | 1,8000 | | 980 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRL620 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742 -irl620pbf -be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 5.2a (TC) | 800mohm @ 3.1a, 5V | 2v @ 250 ähm | 16 NC @ 5 V | ± 10 V | 360 PF @ 25 V. | - - - | 50W (TC) | ||||||
 | Sira90ADP-T1-GE3 | - - - | | 1631 | 0.00000000 | Vishay Siliconix | Trenchfet® | Klebeband (CT) Schneiden | Abgebrochen bei Sic | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sira90 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 71a (TA), 334a (TC) | 0,78 MOHM @ 20A, 10 V. | 2,2 V @ 250 ähm | 195 NC @ 10 V. | +20V, -16v | 9120 PF @ 15 V | - - - | 6.3W (TA), 104W (TC) | ||||||
 | SQJ147ELP-T1_GE3 | 0,9900 | | 24 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ147 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 90a (TC) | 12,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 120 nc @ 10 v | ± 20 V | 5500 PF @ 25 V. | - - - | 183W (TC) | |||||||
 | SIR681DP-T1-RE3 | 2.5700 | | 8399 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir681 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SIR681DP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 80 v | 17,6a (TA), 71,9a (TC) | 11.2mohm @ 10a, 10V | 2,6 V @ 250 ähm | 105 NC @ 10 V | ± 20 V | 4850 PF @ 40 V | - - - | 6.25W (TA), 104W (TC) | ||||||
 | SIJH112E-T1-GE3 | 4.6000 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | Sijh112 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | - - - | 1 (unbegrenzt) | 742-sijh112e-T1-GE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 23a (TA), 225a (TC) | 2,8 MOHM @ 20A, 10V | 4v @ 250 ähm | 160 nc @ 10 v | ± 20 V | 8050 PF @ 50 V | - - - | 3.3W (TA), 333W (TC) | ||||||
 | SIHFPS37N50A-GE3 | 6.7900 | | 2075 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-274aa | MOSFET (Metalloxid) | Super-247 ™ (to-274aa) | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHFPS37N50A-GE3 | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 36a (TC) | 10V | 130MOHM @ 22A, 10V | 4v @ 250 ähm | 180 nc @ 10 v | ± 30 v | 5579 PF @ 25 V. | - - - | 446W (TC) | |||||
 | SIS178LDN-T1-GE3 | 0,9300 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 70 V | 13,9a (TA), 45,3a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 28,5 NC @ 10 V. | ± 20 V | 1135 PF @ 35 V | - - - | 3.6W (TA), 39W (TC) | ||||||
| SIHH080N60E-T1-GE3 | 5.1700 | | 4 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHH080N60E-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 32a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 184W (TC) | |||||
 | SIHG080N60E-GE3 | 4.9900 | | 327 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHG080N60E-GE3 | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 35a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 227W (TC) | |||||
 | SQS660CENW-T1_GE3 | 0,9500 | | 5 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 18a (TC) | 4,5 V, 10 V. | 11.2mohm @ 7a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1950 PF @ 25 V. | - - - | 62,5W (TC) | ||||||
 | Sizf928dt-T1-GE3 | 1.6500 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | Sizf928 | MOSFET (Metalloxid) | 3,9W (TA), 28W (TC), 4,5W (TA), 74W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 33a (TA), 88a (TC), 61A (TA), 248a (TC) | 2,45 MOHM @ 10a, 10 V, 750 µHM @ 15a, 10 V. | 2v @ 250 ähm | - - - | - - - | - - - | |||||||
 | SIR876BDP-T1-RE3 | 1.3100 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 13,6a (TA), 51,4a (TC) | 4,5 V, 10 V. | 10.8mohm @ 10a, 10V | 2,4 V @ 250 ähm | 65 NC @ 10 V | ± 20 V | 3040 PF @ 50 V | - - - | 5W (TA), 71,4W (TC) | ||||||
 | SQD40052EL_GE3 | 1.0500 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 30a (TC) | 4,5 V, 10 V. | 6mohm @ 15a, 10V | 2,2 V @ 250 ähm | 52 NC @ 10 V | ± 20 V | 2600 PF @ 25 V. | - - - | 62W (TC) | ||||||
| SIHG21N80AEF-GE3 | 3.3700 | | 494 | 0.00000000 | Vishay Siliconix | EF | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHG21N80AEF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 800 V | 16.3a (TC) | 10V | 250 MOHM @ 8.5A, 10V | 4v @ 250 ähm | 71 NC @ 10 V | ± 30 v | 1511 PF @ 100 V | - - - | 179W (TC) | |||||
| SQSA70CENW-T1_GE3 | 0,9900 | | 18 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 150 v | 18a (TC) | 10V | 68,5 MOHM @ 7A, 10V | 3,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 540 PF @ 25 V. | - - - | 62,5W (TC) | ||||||
 | SQW33N65EF-GE3 | 6.1900 | | 519 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, e | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQW33N65EF-GE3 | Ear99 | 8541.29.0095 | 480 | N-Kanal | 650 V | 34a (TC) | 10V | 109mohm @ 16.5a, 10V | 4v @ 250 ähm | 173 NC @ 10 V | ± 30 v | 3972 PF @ 100 V | - - - | 375W (TC) | |||||
 | SQD70140EL_GE3 | 1.2100 | | 9 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD70140 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 30a (TC) | 4,5 V, 10 V. | 15mohm @ 30a, 10V | 2,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 2100 PF @ 25 V | - - - | 71W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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