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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SQ2348ES-T1_BE3 | 0,6700 |  | 16 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Lets Kaufen | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2348 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 8a (TC) | 4,5 V, 10 V. | 24MOHM @ 12a, 10V | 2,5 V @ 250 ähm | 14,5 NC @ 10 V. | ± 20 V | 540 PF @ 15 V | - - - | 3W (TC) | ||||||
| SQ2318AES-T1_BE3 | 0,6000 | | 57 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2318 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 8a (TC) | 4,5 V, 10 V. | 31mohm @ 7.9a, 10V | 2,5 V @ 250 ähm | 13 NC @ 10 V | ± 20 V | 553 PF @ 20 V | - - - | 3W (TC) | ||||||
 | SQ4050EY-T1_BE3 | 1.0500 | | 390 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4050 | MOSFET (Metalloxid) | 8-soic | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 19A (TC) | 4,5 V, 10 V. | 8mohm @ 10a, 10V | 2,5 V @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2406 PF @ 20 V | - - - | 6W (TC) | ||||||
| SI2336D-T1-BE3 | 0,5100 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2336 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 4,3a (TA), 5,2a (TC) | 1,8 V, 4,5 V. | 42mohm @ 3,8a, 4,5 V. | 1V @ 250 ähm | 15 NC @ 8 V | ± 8 v | 560 PF @ 15 V | - - - | 1,25W (TA), 1,8W (TC) | |||||
| SQ2389ES-T1_BE3 | 0,6900 | | 37 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2389 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 4.1a (TC) | 4,5 V, 10 V. | 94mohm @ 10a, 10V | 2,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 420 PF @ 20 V | - - - | 3W (TC) | ||||||
 | SQ3481EV-T1_BE3 | 0,6900 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3481 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3481ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 7.5a (TC) | 4,5 V, 10 V. | 43mohm @ 5.3a, 10V | 2,5 V @ 250 ähm | 23.5 NC @ 10 V | ± 20 V | 870 PF @ 15 V | - - - | 4W (TC) | |||||
 | SQJA60EP-T1_BE3 | 1.1100 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | Sqja60 | MOSFET (Metalloxid) | Powerpak® SO-8 Dual | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 30a (TC) | 4,5 V, 10 V. | 12,5 MOHM @ 8A, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1600 PF @ 25 V. | - - - | 45W (TC) | ||||||
 | SIHB125N60EF-GE3 | 4.4000 | | 2 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB125 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB125N60EF-GE3 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 25a (TC) | 10V | 125mohm @ 12a, 10V | 5 V @ 250 ähm | 47 NC @ 10 V | ± 30 v | 1533 PF @ 100 V | - - - | 179W (TC) | |||||
 | SQJ264EP-T1_GE3 | 1.6100 | | 9441 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ264 | MOSFET (Metalloxid) | 27W (TC), 48W (TC) | Powerpak® So-8 Dual Asymmetrisch | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual) Asymmetrisch | 60 v | 20a (TC), 54a (TC) | 20mohm @ 6a, 10 V, 8,6 Mohm @ 10a, 10V | 3,5 V @ 250 ähm | 16nc @ 10v, 32nc @ 10v | 1000pf @ 25v, 2100pf @ 25v | - - - | ||||||||
| SIHB068N60EF-GE3 | 5.5500 | | 700 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB068 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB068N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 41a (TC) | 10V | 68mohm @ 16a, 10V | 5 V @ 250 ähm | 77 NC @ 10 V | ± 30 v | 2628 PF @ 100 V | - - - | 250 W (TC) | |||||
 | SIHG068N60EF-GE3 | 6.0600 | | 17 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG068 | MOSFET (Metalloxid) | To-247ac | Herunterladen | 1 (unbegrenzt) | 742-SIHG068N60EF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 41a (TC) | 10V | 68mohm @ 16a, 10V | 5 V @ 250 ähm | 77 NC @ 10 V | ± 30 v | 2628 PF @ 100 V | - - - | 250 W (TC) | |||||
| SIHG186N60EF-GE3 | 3.4800 | | 371 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG186 | MOSFET (Metalloxid) | To-247ac | Herunterladen | 1 (unbegrenzt) | 742-SIHG186N60EF-GE3 | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 8.4a (TC) | 10V | 193mohm @ 9.5a, 10V | 5 V @ 250 ähm | 32 NC @ 10 V | ± 30 v | 1081 PF @ 100 V | - - - | 156W (TC) | |||||
 | Siha21n80ae-GE3 | 2.8000 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha21 | MOSFET (Metalloxid) | To-220 Full Pack | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-siha21n80ae-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 7.5a (TC) | 10V | 235mohm @ 11a, 10V | 4v @ 250 ähm | 72 NC @ 10 V | ± 30 v | 1388 PF @ 100 V | - - - | 33W (TC) | ||||
 | SQJ142EP-T1_GE3 | 1.1200 | | 3403 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ142 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ142EP-T1_GE3TR | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 40 v | 167a (TC) | 10V | 3,6 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 2650 PF @ 25 V. | - - - | 191W (TC) | ||||
 | Siha17N80AE-GE3 | 2.7700 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha17 | MOSFET (Metalloxid) | To-220 Full Pack | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-siha17n80ae-GE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 7a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 30 v | 1260 PF @ 100 V | - - - | 34W (TC) | ||||
 | SIHB17N80AE-GE3 | 4.1600 | | 2 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB17 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB17N80AE-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 15a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 30 v | 1260 PF @ 100 V | - - - | 179W (TC) | ||||
| SIHG11N80AE-GE3 | 2.7600 | | 3565 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Sihg11 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHG11N80AE-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 800 V | 8a (TC) | 10V | 450MOHM @ 5.5A, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 30 v | 804 PF @ 100 V | - - - | 78W (TC) | ||||
 | Sidr626ldp-t1-re3 | 3.0400 | | 18 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sidr626 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIDR626LDP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 45,6a (TA), 2,4a (TC) | 4,5 V, 10 V. | 1,5 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 135 NC @ 10 V | ± 20 V | 5900 PF @ 30 V | - - - | 6,25W (TA), 125W (TC) | ||||
 | SIR680LDP-T1-RE3 | 2.3400 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir680 | MOSFET (Metalloxid) | Powerpak® SO-8 | - - - | 1 (unbegrenzt) | 742-SIR680LDP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 31,8a (TA), 130a (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 135 NC @ 10 V | ± 20 V | 7250 PF @ 40 V | - - - | 6.25W (TA), 104W (TC) | |||||
 | SISS30ADN-T1-GE3 | 1.3500 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS30 | MOSFET (Metalloxid) | Powerpak® 1212-8s | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 15,9a (TA), 54,7a (TC) | 7,5 V, 10 V. | 8,9mohm @ 10a, 10V | 3,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1295 PF @ 40 V | - - - | 4,8W (TA), 57W (TC) | ||||||
 | IRFR210PBF-BE3 | 1.1700 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR210 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFR210PBF-BE3 | Ear99 | 8541.29.0095 | 75 | N-Kanal | 200 v | 2.6a (TC) | 1,5OHM @ 1,6a, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 20 V | 140 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | ||||||
 | SI1443EDH-T1-BE3 | 0,5400 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1443 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 4a (ta), 4a (TC) | 54mohm @ 4.3a, 10V | 1,5 V @ 250 ähm | 28 NC @ 10 V | ± 12 V | - - - | 1,6W (TA), 2,8 W (TC) | |||||||
 | SI1302DL-T1-BE3 | 0,4400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | SI1302 | MOSFET (Metalloxid) | SC-70-3 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 600 mA (TA) | 480MOHM @ 600 mA, 10V | 3v @ 250 ähm | 1,4 NC @ 10 V. | ± 20 V | - - - | 280 MW (TA) | |||||||
 | IRF9520PBF-BE3 | 1.2900 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRF9520 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9520PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 100 v | 6.8a (TC) | 600mohm @ 4.1a, 10V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 390 PF @ 25 V. | - - - | 60 W (TC) | ||||||
| IRF720PBF-BE3 | 1.2900 | | 846 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF720 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF720PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 3.3a (TC) | 1,8ohm @ 2a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 410 PF @ 25 V. | - - - | 50W (TC) | ||||||
| SI1469DH-T1-BE3 | 0,6100 | | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1469 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3,2a (TA), 2,7a (TC) | 80Mohm @ 2a, 10V | 1,5 V @ 250 ähm | 8,5 NC @ 4,5 V | ± 12 V | 470 PF @ 10 V. | - - - | 1,5 W (TA), 2,78 W (TC) | ||||||
| IRLZ24PBF-BE3 | 1.7000 | | 841 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRLZ24 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742 -irlz24pbf -be3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 17a (TC) | 100mohm @ 10a, 5V | 2v @ 250 ähm | 18 NC @ 5 V. | ± 10 V | 870 PF @ 25 V. | - - - | 60 W (TC) | ||||||
| IRFZ44RPBF-BE3 | 2.7800 | | 856 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Irfz44 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRFZ44RPBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 50a (TC) | 28mohm @ 31a, 10V | 4v @ 250 ähm | 67 NC @ 10 V | ± 20 V | 1900 PF @ 25 V. | - - - | 150W (TC) | ||||||
| SI1553CDL-T1-BE3 | 0,4900 | | 1538 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1553 | MOSFET (Metalloxid) | 290 MW (TA), 340 MW (TC) | SC-70-6 | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | 742-SI1553CDL-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 700 Ma (TA), 700 Ma (TC), 400 Ma (TA), 500 Ma (TC) | 390MOHM @ 700 mA, 4,5 V, 850MOHM @ 400 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,8nc @ 10v, 3nc @ 10v | 38pf @ 10v, 43pf @ 10v | - - - | ||||||
| IRF9Z10PBF-BE3 | 1.6300 | | 862 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRF9Z10 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF9Z10PBF-BE3 | Ear99 | 8541.29.0095 | 50 | P-Kanal | 60 v | 6.7a (TC) | 500mohm @ 4a, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 43W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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