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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHP10N40D-E3 | 0,8761 |  | 1020 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP10 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 10a (TC) | 10V | 600mohm @ 5a, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 30 v | 526 PF @ 100 V | - - - | 147W (TC) | |||||
 | Sihu7N60E-GE3 | 1.8300 | | 2344 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Sihu7 | MOSFET (Metalloxid) | To-251aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 7a (TC) | 10V | 600 MOHM @ 3,5A, 10 V. | 4v @ 250 ähm | 40 nc @ 10 v | ± 30 v | 680 PF @ 100 V | - - - | 78W (TC) | |||||
 | SIZ998BDT-T1-GE3 | 0,9400 | | 18 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | SIZ998 | MOSFET (Metalloxid) | 3,8 W (TA), 20W (TC), 4,8W (TA), 32,9W (TC) | 8-Powerpair® (6x5) | - - - | 1 (unbegrenzt) | 742-Siz998bdt-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual), Schottky | 30V | 23,7a (TA), 54,8a (TC), 36,2a (TA), 94,6a (TC) | 4,39mohm @ 15a, 10 V, 2,4 Mohm @ 19a, 10V | 2,2 V @ 250 ähm | 18nc @ 10v, 46.7nc @ 10v | 790pf @ 15V, 2130pf @ 15V | - - - | |||||||
| IRF730PBF-BE3 | 1.5700 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf730 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF730PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 5.5a (TC) | 10V | 1ohm @ 3a, 10 V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 700 PF @ 25 V. | - - - | 74W (TC) | |||||
 | SUD25N15-52-BE3 | 2.5100 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud25 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-Sud25N15-52-BE3CT | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 150 v | 25a (TC) | 6 V, 10V | 52mohm @ 5a, 10V | 4v @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1725 PF @ 25 V. | - - - | 3W (TA), 136W (TC) | |||||
| Sud80460e-Be3 | 0,9700 | | 1259 | 0.00000000 | Vishay Siliconix | Thunderfet® | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SUD80460 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-sud80460e-be3 | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 150 v | 42a (TC) | 10V | 44.7mohm @ 8.3a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 20 V | 560 PF @ 50 V | - - - | 65,2W (TC) | |||||
| IRFR110TRPBF-BE3 | 1.0000 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR110 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-IRFR110TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 100 v | 4.3a (TC) | 10V | 540MOHM @ 2,6a, 10V | 4v @ 250 ähm | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
| SUD19N20-90-BE3 | 3.0700 | | 4940 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sud19 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-Sud19N20-90-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 200 v | 19A (TC) | 6 V, 10V | 90 MOHM @ 5A, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 20 V | 1800 PF @ 25 V. | - - - | 3W (TA), 136W (TC) | |||||
| IRFR310TRPBF-BE3 | 1.1700 | | 72 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Irfr310 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-IRFR310TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 400 V | 1.7a (TC) | 10V | 3,6OHM @ 1a, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 170 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
| Sud90330e-be3 | 1.5800 | | 8916 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SUD90330 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | 742-Sud90330e-Be3tr | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 200 v | 35.8a (TC) | 7,5 V, 10 V. | 37,5 MOHM @ 12,2a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1172 PF @ 100 V | - - - | 125W (TC) | |||||
| IRFR9310TRLPBF-BE3 | 1.5800 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9310 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 400 V | 1,8a (TC) | 10V | 7ohm @ 1.1a, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 50W (TC) | ||||||
 | SQ4401EY-T1_BE3 | 2.9300 | | 17 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4401 | MOSFET (Metalloxid) | 8-soic | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 40 v | 17.3a (TC) | 4,5 V, 10 V. | 14mohm @ 10.5a, 10V | 2,5 V @ 250 ähm | 115 NC @ 10 V | ± 20 V | 4250 PF @ 20 V | - - - | 7.14W (TC) | ||||||
| SQ4940AEY-T1_BE3 | 1.0100 | | 18 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4940 | MOSFET (Metalloxid) | 4W (TC) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4940AEY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 40V | 8a (TC) | 24MOHM @ 5.3A, 10V | 2,5 V @ 250 ähm | 43nc @ 10v | 741pf @ 20V | - - - | |||||||
 | SQJ500AEP-T1_BE3 | 1.6100 | | 5764 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ500 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 | - - - | 1 (unbegrenzt) | 742-SQJ500AEP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N und p-kanal | 40V | 30a (TC) | 9,2mohm @ 9,8a, 10V, 27MOHM @ 6a, 10V | 2,3 V @ 250 UA, 2,5 V @ 250 µA | 38.3nc @ 10v, 45nc @ 10v | 1843pf @ 20V, 1628pf @ 20V | - - - | |||||||
| SQ4937EY-T1_BE3 | 1.2300 | | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4937 | MOSFET (Metalloxid) | 3.3W (TC) | 8-soic | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | 2 p-kanal (dual) | 30V | 5a (TC) | 75mohm @ 3,9a, 10V | 2,5 V @ 250 ähm | 15nc @ 10v | 480pf @ 25v | - - - | ||||||||
| SQ9407EY-T1_BE3 | 1.1800 | | 13 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ9407 | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 60 v | 4.6a (TC) | 4,5 V, 10 V. | 85mohm @ 3,5a, 10V | 2,5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1140 PF @ 30 V | - - - | 3.75W (TC) | ||||||
 | SQ2303ES-T1_BE3 | 0,5300 | | 658 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2303 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SQ2303ES-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 2,5a (TC) | 4,5 V, 10 V. | 170 MOHM @ 1,7A, 10V | 2,5 V @ 250 ähm | 6,8 nc @ 10 v | ± 20 V | 210 PF @ 25 V. | - - - | 1,9W (TC) | |||||
| SQ4920EY-T1_BE3 | 1.6700 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4920 | MOSFET (Metalloxid) | 4.4W (TC) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4920EY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 30V | 8a (TC) | 14,5 MOHM @ 6a, 10V | 2,5 V @ 250 ähm | 30nc @ 10v | 1465PF @ 15V | - - - | |||||||
 | SQS460EN-T1_BE3 | 1.2900 | | 63 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SQS460 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | 1 (unbegrenzt) | 742-sqs460en-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 8a (TC) | 4,5 V, 10 V. | 36mohm @ 5.3a, 10V | 2,5 V @ 250 ähm | 20 nc @ 10 v | ± 20 V | 755 PF @ 25 V. | - - - | 39W (TC) | |||||
| SQ2348ES-T1_BE3 | 0,6700 | | 16 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Lets Kaufen | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2348 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 8a (TC) | 4,5 V, 10 V. | 24MOHM @ 12a, 10V | 2,5 V @ 250 ähm | 14,5 NC @ 10 V. | ± 20 V | 540 PF @ 15 V | - - - | 3W (TC) | ||||||
| SQ2318AES-T1_BE3 | 0,6000 | | 57 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2318 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 8a (TC) | 4,5 V, 10 V. | 31mohm @ 7.9a, 10V | 2,5 V @ 250 ähm | 13 NC @ 10 V | ± 20 V | 553 PF @ 20 V | - - - | 3W (TC) | ||||||
| SQ4050EY-T1_BE3 | 1.0500 | | 390 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4050 | MOSFET (Metalloxid) | 8-soic | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 19A (TC) | 4,5 V, 10 V. | 8mohm @ 10a, 10V | 2,5 V @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2406 PF @ 20 V | - - - | 6W (TC) | ||||||
| SI2336D-T1-BE3 | 0,5100 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2336 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 4,3a (TA), 5,2a (TC) | 1,8 V, 4,5 V. | 42mohm @ 3,8a, 4,5 V. | 1V @ 250 ähm | 15 NC @ 8 V | ± 8 v | 560 PF @ 15 V | - - - | 1,25W (TA), 1,8W (TC) | |||||
| SQ2389ES-T1_BE3 | 0,6900 | | 37 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2389 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 4.1a (TC) | 4,5 V, 10 V. | 94mohm @ 10a, 10V | 2,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 420 PF @ 20 V | - - - | 3W (TC) | ||||||
 | SQ3481EV-T1_BE3 | 0,6900 | | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3481 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3481ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 7.5a (TC) | 4,5 V, 10 V. | 43mohm @ 5.3a, 10V | 2,5 V @ 250 ähm | 23.5 NC @ 10 V | ± 20 V | 870 PF @ 15 V | - - - | 4W (TC) | |||||
 | SQJA60EP-T1_BE3 | 1.1100 | | 3 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | Sqja60 | MOSFET (Metalloxid) | Powerpak® SO-8 Dual | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 30a (TC) | 4,5 V, 10 V. | 12,5 MOHM @ 8A, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1600 PF @ 25 V. | - - - | 45W (TC) | ||||||
 | SIHB125N60EF-GE3 | 4.4000 | | 2 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB125 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB125N60EF-GE3 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 25a (TC) | 10V | 125mohm @ 12a, 10V | 5 V @ 250 ähm | 47 NC @ 10 V | ± 30 v | 1533 PF @ 100 V | - - - | 179W (TC) | |||||
 | SQJ264EP-T1_GE3 | 1.6100 | | 9441 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ264 | MOSFET (Metalloxid) | 27W (TC), 48W (TC) | Powerpak® So-8 Dual Asymmetrisch | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual) Asymmetrisch | 60 v | 20a (TC), 54a (TC) | 20mohm @ 6a, 10 V, 8,6 Mohm @ 10a, 10V | 3,5 V @ 250 ähm | 16nc @ 10v, 32nc @ 10v | 1000pf @ 25v, 2100pf @ 25v | - - - | ||||||||
| SIHB068N60EF-GE3 | 5.5500 | | 700 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB068 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB068N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 41a (TC) | 10V | 68mohm @ 16a, 10V | 5 V @ 250 ähm | 77 NC @ 10 V | ± 30 v | 2628 PF @ 100 V | - - - | 250 W (TC) | |||||
 | SIHG068N60EF-GE3 | 6.0600 | | 17 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG068 | MOSFET (Metalloxid) | To-247ac | Herunterladen | 1 (unbegrenzt) | 742-SIHG068N60EF-GE3 | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 41a (TC) | 10V | 68mohm @ 16a, 10V | 5 V @ 250 ähm | 77 NC @ 10 V | ± 30 v | 2628 PF @ 100 V | - - - | 250 W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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