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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHB17N80E-GE3 | 5.1200 |  | 8111 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB17 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 15a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 122 NC @ 10 V | ± 30 v | 2408 PF @ 100 V | - - - | 208W (TC) | ||||
 | SIHFR9310TR-GE3 | 1.5800 | | 8059 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR9310 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 400 V | 1,8a (TC) | 10V | 7ohm @ 1.1a, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 50W (TC) | ||||
| IRFZ34SPBF | 1.5800 | | 6732 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Irfz34 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 60 v | 30a (TC) | 10V | 50mohm @ 18a, 10V | 4v @ 250 ähm | 46 NC @ 10 V | ± 20 V | 1200 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | ||||
| SIHF640S-GE3 | 2.0800 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF640 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 18a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 70 nc @ 10 v | ± 20 V | 1300 PF @ 25 V. | - - - | 3.1W (TA), 130 W (TC) | ||||
| SIHB11N80E-GE3 | 3.8100 | | 3833 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB11 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 12a (TC) | 10V | 440MOHM @ 5.5A, 10V | 4v @ 250 ähm | 88 NC @ 10 V | ± 30 v | 1670 PF @ 100 V | - - - | 179W (TC) | ||||
 | SQJA36EP-T1_GE3 | 1.9800 | | 2113 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja36 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJA36EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 350a (TC) | 10V | 1,24 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 107 NC @ 10 V | ± 20 V | 6636 PF @ 25 V. | - - - | 500W (TC) | |||
 | SIHH070N60EF-T1GE3 | 7.9200 | | 4041 | 0.00000000 | Vishay Siliconix | EF | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | SIHH070 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 36a (TC) | 10V | 71Mohm @ 15a, 10V | 5 V @ 250 ähm | 75 NC @ 10 V | ± 30 v | 2647 PF @ 100 V | - - - | 202W (TC) | ||||
 | SISS50DN-T1-GE3 | 0,8800 | | 6639 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS50 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | 1 (unbegrenzt) | 742-SISS50DN-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 45 V | 29,7a (TA), 108a (TC) | 4,5 V, 10 V. | 2,83 MOHM @ 15a, 10V | 2,3 V @ 250 ähm | 70 nc @ 10 v | +20V, -16v | 4000 PF @ 20 V | - - - | 5W (TA), 65,7W (TC) | ||||
| SQJ464EP-T2_GE3 | 0,3687 | | 7735 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ464 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ464EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 32a (TC) | 4,5 V, 10 V. | 17mohm @ 7.1a, 10V | 2,5 V @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2086 PF @ 30 V | - - - | 45W (TC) | |||
 | SQJB60EP-T2_GE3 | 0,5045 | | 7206 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB60 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJB60EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 30a (TC) | 12mohm @ 10a, 10V | 2,5 V @ 250 ähm | 30nc @ 10v | 1600pf @ 25v | - - - | |||||
| SQD50N04_4M5LT4GE3 | 0,6985 | | 2916 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD50 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD50N04_4M5LT4GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 50a (TC) | 4,5 V, 10 V. | 3,5 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 130 nc @ 10 v | ± 20 V | 5860 PF @ 25 V. | - - - | 136W (TC) | |||
| SIHLR120-GE3 | 0,2893 | | 2209 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHLR120 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHLR120-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 7.7a (TC) | 4V, 5V | 270 MOHM @ 4,6a, 5V | 2v @ 250 ähm | 12 NC @ 5 V | ± 10 V | 490 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | |||
| SIHF9640S-GE3 | 0,9592 | | 6687 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF9640 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHF9640S-GE3TR | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 200 v | 11a (TC) | 10V | 500mohm @ 6.6a, 10V | 4v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 1200 PF @ 25 V. | - - - | 3W (TA), 125W (TC) | |||
 | SIR624DP-T1-RE3 | 1.2000 | | 2242 | 0.00000000 | Vishay Siliconix | Thunderfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir624 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 5,7A (TA), 18,6a (TC) | 7,5 V, 10 V. | 60MOHM @ 10a, 10V | 4v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1110 PF @ 100 V | - - - | 5W (TA), 52W (TC) | ||||
 | SIA456DJ-T3-GE3 | 0,3589 | | 1335 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA456 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIA456DJ-T3-GE3TR | Ear99 | 8541.29.0095 | 10.000 | N-Kanal | 200 v | 1,1a (TA), 2,6a (TC) | 1,8 V, 4,5 V. | 1,38OHM @ 750 mA, 4,5 V. | 1,4 V @ 250 ähm | 14,5 NC @ 10 V. | ± 16 v | 350 PF @ 100 V | - - - | 3,5 W (TA), 19W (TC) | |||
| SQD100N04_3M6T4GE3 | 0,6985 | | 1050 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C. | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD100 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD100N04_3M6T4GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 100a (TC) | 10V | 3,6 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 105 NC @ 10 V | ± 20 V | 6700 PF @ 25 V. | - - - | 136W (TC) | |||
| SQD23N06-31L_T4GE3 | 0,4269 | | 4967 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD23 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQD23N06-31L_T4GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 23a (TC) | 4,5 V, 10 V. | 31mohm @ 15a, 10V | 2,5 V @ 250 ähm | 24 nc @ 10 v | ± 20 V | 845 PF @ 25 V. | - - - | 37W (TC) | |||
| SIR626ADP-T1-RE3 | 2.0600 | | 23 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir626 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 40,4a (TA), 165a (TC) | 6 V, 10V | 1,75 MOHM @ 20A, 10V | 3,5 V @ 250 ähm | 83 NC @ 10 V | ± 20 V | 3770 PF @ 30 V | - - - | 6.25W (TA), 104W (TC) | ||||
 | SIHG105N60EF-GE3 | 4.3600 | | 500 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG105 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 500 | N-Kanal | 600 V | 29a (TC) | 10V | 102mohm @ 13a, 10V | 5 V @ 250 ähm | 53 NC @ 10 V | ± 30 v | 1804 PF @ 100 V. | - - - | 208W (TC) | ||||
| SIR106ADP-T1-RE3 | 1.5700 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir106 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIR106ADP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 16,1a (TA), 65,8 (TC) | 7,5 V, 10 V. | 8mohm @ 15a, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 20 V | 2440 PF @ 50 V | - - - | 5W (TA), 83,3W (TC) | |||
 | SIHP11N80AE-GE3 | 2.0300 | | 818 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP11 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 8a (TC) | 10V | 450MOHM @ 5.5A, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 30 v | 804 PF @ 100 V | - - - | 78W (TC) | ||||
| SQJQ144AE-T1_GE3 | 2.7700 | | 4319 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | SQJQ144 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJQ144AE-T1_GE3CT | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 575a (TC) | 10V | 0,9 MOHM @ 20A, 10 V. | 3,5 V @ 250 ähm | 145 NC @ 10 V. | ± 20 V | 9020 PF @ 25 V. | - - - | 600W (TC) | |||
| V50382-E3 | - - - | | 2405 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Aktiv | V50382 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-V50382-E3TR | 0000.00.0000 | 500 | - - - | |||||||||||||||||||
| V50383-E3 | - - - | | 8432 | 0.00000000 | Vishay Siliconix | * | Band & Rollen (TR) | Veraltet | V50383 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-V50383-E3tr | Veraltet | 500 | - - - | |||||||||||||||||||
 | SIHA6N80AE-GE3 | 1.6400 | | 849 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha6 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 5a (TC) | 10V | 950Mohm @ 2a, 10V | 4v @ 250 ähm | 22,5 NC @ 10 V | ± 30 v | 422 PF @ 100 V | - - - | 30W (TC) | ||||
| Siha11n80ae-GE3 | 2.0000 | | 7 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha11 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 8a (TC) | 10V | 450MOHM @ 5.5A, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 30 v | 804 PF @ 100 V | - - - | 31W (TC) | ||||
| SISS32LDN-T1-GE3 | 1.2200 | | 5243 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | SISS32 | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 17,4a (TA), 63A (TC) | 4,5 V, 10 V. | 7,2 Mohm @ 15a, 10V | 2,5 V @ 250 ähm | 57 NC @ 10 V | ± 20 V | 2550 PF @ 40 V | - - - | 5W (TA), 65,7W (TC) | ||||
 | SIHB053N60E-GE3 | 6.3800 | | 912 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHB053N60E-GE3 | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 47a (TC) | 10V | 54mohm @ 26,5a, 10V | 5 V @ 250 ähm | 92 NC @ 10 V | ± 30 v | 3722 PF @ 100 V | - - - | 278W (TC) | ||||
 | SIR5802DP-T1-RE3 | 1.8900 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIR5802DP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 33,6a (TA), 137,5a (TC) | 7,5 V, 10 V. | 2,9 MOHM @ 20A, 10V | 4v @ 250 ähm | 60 nc @ 10 v | ± 20 V | 3020 PF @ 40 V | - - - | 6.25W (TA), 104W (TC) | ||||
 | SQJ123ELP-T1_GE3 | 1.5800 | | 7998 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ123ELP-T1_GE3CT | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 238a (TC) | 1,8 V, 4,5 V. | 4mohm @ 10a, 4,5 V. | 1,5 V @ 250 ähm | 180 NC @ 4,5 V. | ± 8 v | 11680 PF @ 6 V | - - - | 375W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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