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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SI4401FDY-T1-GE3 | 0,8800 |  | 7 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen III | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4401 | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 40 v | 9,9a (TA), 14A (TC) | 4,5 V, 10 V. | 14.2mohm @ 10a, 10V | 2,3 V @ 250 ähm | 100 nc @ 10 v | ± 20 V | 4000 PF @ 20 V | - - - | 2,5 W (TA), 5W (TC) | ||||
 | SQD40081EL_GE3 | 1.3700 | | 2265 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD40081 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 40 v | 50a (TC) | 10V | 8.5Mohm @ 25a, 10V | 2,5 V @ 250 ähm | 210 nc @ 10 v | ± 20 V | 9950 PF @ 25 V. | - - - | 71W (TC) | ||||
 | SQ1464EEH-T1_GE3 | 0,5000 | | 41 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SQ1464 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 60 v | 440 mA (TC) | 1,5 v | 1,41OHM @ 2a, 1,5 V. | 1V @ 250 ähm | 4.1 NC @ 4.5 V. | ± 8 v | 140 PF @ 25 V. | - - - | 430 MW (TC) | ||||
 | SQJ415EP-T1_GE3 | 1.0000 | | 8070 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ415 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 30a (TC) | 4,5 V, 10 V. | 14mohm @ 10a, 10V | 2,5 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 6000 PF @ 25 V. | - - - | 45W (TC) | ||||
 | SIR112DP-T1-RE3 | 1.3800 | | 7139 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir112 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 37,6a (TA), 133a (TC) | 4,5 V, 10 V. | 1,96 MOHM @ 10A, 10 V. | 2,4 V @ 250 ähm | 89 NC @ 10 V | +20V, -16v | 4270 PF @ 20 V | - - - | 5W (TA), 62,5W (TC) | ||||
 | Sia907edj-T4-GE3 | - - - | | 8775 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | - - - | - - - | - - - | SIA907 | - - - | - - - | - - - | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - | ||||||
| Suc85n15-19dwf | - - - | | 5169 | 0.00000000 | Vishay Siliconix | - - - | Schüttgut | Veraltet | - - - | - - - | - - - | Suc85 | - - - | - - - | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | - - - | - - - | - - - | - - - | - - - | - - - | - - - | - - - | |||||||
 | SISH114ADN-T1-GE3 | 0,7700 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | Sish114 | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 18A (TA), 35A (TC) | 4,5 V, 10 V. | 7,5 MOHM @ 18A, 10V | 2,5 V @ 250 ähm | 32 NC @ 10 V | ± 20 V | 1230 PF @ 15 V | - - - | 3.7W (TA), 39W (TC) | ||||
 | SIA471DJ-T1-GE3 | 0,5900 | | 8282 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SIA471 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 12,9a (TA), 30,3a (TC) | 4,5 V, 10 V. | 14mohm @ 10a, 10V | 2,5 V @ 250 ähm | 27,8 NC @ 10 V. | +16 V, -20 V | 1170 PF @ 15 V | - - - | 3,5 W (TA), 19,2W (TC) | ||||
 | SISF20DN-T1-GE3 | 1.5900 | | 6407 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8SCD Dual | SISF20 | MOSFET (Metalloxid) | 5.2W (TA), 69,4W (TC) | Powerpak® 1212-8SCD Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 14A (TA), 52A (TC) | 13mohm @ 7a, 10V | 3v @ 250 ähm | 33nc @ 10v | 1290pf @ 30v | - - - | ||||||
 | SQ7414CENW-T1_GE3 | 0,9600 | | 48 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8W | SQ7414 | MOSFET (Metalloxid) | Powerpak® 1212-8W | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 18a (TC) | 4,5 V, 10 V. | 23mohm @ 8.7a, 10V | 2,5 V @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1590 PF @ 30 V | - - - | 62W (TC) | ||||
 | SQM40020EL_GE3 | 2.2300 | | 5185 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM40020 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 100a (TC) | 4,5 V, 10 V. | 2,2 MOHM @ 20A, 10V | 2,2 V @ 250 ähm | 165 NC @ 10 V. | ± 20 V | 8800 PF @ 25 V. | - - - | 150W (TC) | ||||
| SQM50034EL_GE3 | 2.1900 | | 450 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SQM50034 | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 100a (TC) | 4,5 V, 10 V. | 3,9 MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 90 nc @ 10 v | ± 20 V | 6100 PF @ 25 V. | - - - | 150W (TC) | ||||
| SQD10950E_GE3 | 1.4500 | | 9860 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SQD10950 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 250 V | 11,5a (TC) | 7,5 V, 10 V. | 162mohm @ 12a, 10V | 3,5 V @ 250 ähm | 16 NC @ 10 V | ± 20 V | 785 PF @ 25 V. | - - - | 62W (TC) | ||||
 | SISS73DN-T1-GE3 | 1.5100 | | 5309 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS73 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 150 v | 4,4a (TA), 16,2a (TC) | 10V | 125mohm @ 10a, 10V | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 719 PF @ 75 V | - - - | 5.1W (TA), 65,8W (TC) | ||||
| SISHA14DN-T1-GE3 | 0,6400 | | 19 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | Sisha14 | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 19,7a (TA), 20a (TC) | 4,5 V, 10 V. | 5.1MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 29 NC @ 10 V | +20V, -16v | 1450 PF @ 15 V | - - - | 3,57W (TA), 26,5 W (TC) | ||||
| SIR120DP-T1-RE3 | 1.7100 | | 579 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir120 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 24,7a (TA), 106a (TC) | 7,5 V, 10 V. | 3,55 MOHM @ 15a, 10V | 3,5 V @ 250 ähm | 94 NC @ 10 V | ± 20 V | 4150 PF @ 40 V | - - - | 5.4W (TA), 100W (TC) | ||||
 | Sihd2n80ae-GE3 | 0,5174 | | 1677 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | Sihd2 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2266-SIHD2N80AE-GE3 | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 800 V | 2,9a (TC) | 10V | 2,9OHM @ 500 mA, 10V | 4v @ 250 ähm | 10.5 NC @ 10 V | ± 30 v | 180 PF @ 100 V. | - - - | 62,5W (TC) | |||
 | SIHG22N60EF-GE3 | 4.2500 | | 456 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG22 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 19A (TC) | 10V | 182mohm @ 11a, 10V | 4v @ 250 ähm | 96 NC @ 10 V | ± 30 v | 1423 PF @ 100 V | - - - | 179W (TC) | ||||
| SQJA78EP-T1_GE3 | 1.7100 | | 5 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sqja78 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 72a (TC) | 10V | 5.3mohm @ 10a, 10V | 3,3 V @ 250 ähm | 95 NC @ 10 V | ± 20 V | 5100 PF @ 25 V. | - - - | 68W (TC) | ||||
 | SIS128LDN-T1-GE3 | 0,9900 | | 1 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SIS128 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 10.2a (TA), 33,7a (TC) | 4,5 V, 10 V. | 15,6 MOHM @ 10a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1250 PF @ 40 V | - - - | 3.6W (TA), 39W (TC) | ||||
 | SUP60020E-GE3 | 3.1100 | | 198 | 0.00000000 | Vishay Siliconix | Trenchfet® | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | SUP60020 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 80 v | 150a (TC) | 7,5 V, 10 V. | 2,4 MOHM @ 30a, 10V | 4v @ 250 ähm | 227 NC @ 10 V | ± 20 V | 10680 PF @ 40 V | - - - | 375W (TC) | ||||
| SIHG21N80AE-GE3 | 4.7800 | | 500 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG21 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 2266-SIHG21N80AE-GE3 | Ear99 | 8541.29.0095 | 25 | N-Kanal | 800 V | 17,4a (TC) | 10V | 235mohm @ 11a, 10V | 4v @ 250 ähm | 72 NC @ 10 V | ± 30 v | 1388 PF @ 100 V | - - - | 32W (TC) | |||
 | SI4425FDY-T1-GE3 | 0,7100 | | 3274 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4425 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 12,7a (TA), 18,3a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 10a, 10V | 2,2 V @ 250 ähm | 41 nc @ 10 v | +16 V, -20 V | 1620 PF @ 15 V | - - - | 2,3 W (TA), 4,8W (TC) | ||||
| SIHJ690N60E-T1-GE3 | 1.7400 | | 4 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIHJ690 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 5.6a (TC) | 10V | 700MOHM @ 2a, 10V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 347 PF @ 100 V | - - - | 48W (TC) | ||||
 | SIHP690N60E-GE3 | 1,9000 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP690 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 6.4a (TC) | 10V | 700MOHM @ 2a, 10V | 5 V @ 250 ähm | 12 NC @ 10 V | ± 30 v | 347 PF @ 100 V | - - - | 62,5W (TC) | ||||
| SIHFR320-GE3 | 0,8800 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR320 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 400 V | 3.1a (TC) | 10V | 1,8OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
 | SiHll110TR-GE3 | 0,6500 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | SiHll110 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 1,5a (TC) | 4V, 5V | 540MOHM @ 900 mA, 5V | 2v @ 250 ähm | 6.1 NC @ 5 V | ± 10 V | 250 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | ||||
 | SIHB17N80E-GE3 | 5.1200 | | 8111 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB17 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 15a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 122 NC @ 10 V | ± 30 v | 2408 PF @ 100 V | - - - | 208W (TC) | ||||
| SIHFR9310TR-GE3 | 1.5800 | | 8059 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SIHFR9310 | MOSFET (Metalloxid) | To-252aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 400 V | 1,8a (TC) | 10V | 7ohm @ 1.1a, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 50W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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