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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SI3437DV-T1-BE3 | 0,9100 |  | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 150 v | 1,1a (TA), 1,4a (TC) | 6 V, 10V | 750 MOHM @ 1,4a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 510 PF @ 50 V | - - - | 2W (TA), 3,2 W (TC) | ||||||
 | SQJ952EP-T1_BE3 | 1.1400 | | 9816 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ952 | MOSFET (Metalloxid) | 25W (TC) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ952EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 23a (TC) | 20mohm @ 10.3a, 10V | 2,5 V @ 250 ähm | 30nc @ 10v | 1800pf @ 30v | - - - | ||||||
 | SIHFL210TR-GE3 | 0,6700 | | 388 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | MOSFET (Metalloxid) | SOT-223 | Herunterladen | 1 (unbegrenzt) | 742-SIHFL210TR-GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 960 Ma (TC) | 10V | 1,5OHM @ 580 mA, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 20 V | 140 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
| SQJB40EP-T1_BE3 | 1.1900 | | 7356 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJB40 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 8mohm @ 8a, 10V | 2,5 V @ 250 ähm | 35nc @ 10v | 1900pf @ 25v | - - - | |||||||
 | SI2301CDS-T1-BE3 | 0,3900 | | 4 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 2,3a (TA), 3,1a (TC) | 2,5 V, 4,5 V. | 112mohm @ 2,8a, 4,5 V. | 1V @ 250 ähm | 10 NC @ 4,5 V. | ± 8 v | 405 PF @ 10 V. | - - - | 860 MW (TA), 1,6 W (TC) | ||||||
 | SQ3461EV-T1_BE3 | 0,8000 | | 4473 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3461ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 8a (TC) | 1,8 V, 4,5 V. | 25mo @ 7,9a, 4,5 V. | 1V @ 250 ähm | 28 NC @ 4,5 V. | ± 8 v | 2000 PF @ 6 V | - - - | 5W (TC) | |||||
| SI2347D-T1-BE3 | 0,4300 | | 461 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SI2347D-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 3,8a (TA), 5a (TC) | 4,5 V, 10 V. | 42mohm @ 3,8a, 10V | 2,5 V @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 705 PF @ 15 V | - - - | 1,2W (TA), 1,7W (TC) | ||||
 | SQS462en-T1_BE3 | 1.0300 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | 1 (unbegrenzt) | 742-sqs462en-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 8a (TC) | 4,5 V, 10 V. | 63mohm @ 4.3a, 10V | 2,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 470 PF @ 25 V. | - - - | 33W (TC) | |||||
| SI2323CDS-T1-BE3 | 0,4700 | | 3618 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2323CDS-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4,6a (TA), 6a (TC) | 1,8 V, 4,5 V. | 39mohm @ 4,6a, 4,5 V. | 1V @ 250 ähm | 25 NC @ 4,5 V. | ± 8 v | 1090 PF @ 10 V. | - - - | 1,25W (TA), 2,5W (TC) | |||||
| SI2356D-T1-BE3 | 0,4000 | | 8251 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 40 v | 3,2a (TA), 4,3a (TC) | 2,5 V, 10 V. | 51mohm @ 3.2a, 10 V. | 1,5 V @ 250 ähm | 13 NC @ 10 V | ± 12 V | 370 PF @ 20 V | - - - | 960 MW (TA), 1,7W (TC) | ||||||
 | SQJA68EP-T1_BE3 | 0,7500 | | 1291 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA68EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 14a (TC) | 4,5 V, 10 V. | 92mohm @ 4a, 10V | 2,5 V @ 250 ähm | 8 NC @ 10 V | ± 20 V | 280 PF @ 25 V. | - - - | 45W (TC) | |||||
 | SIHA22N60E-GE3 | 3.9000 | | 997 | 0.00000000 | Vishay Siliconix | El | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 8a (TC) | 10V | 180MOHM @ 11A, 10V | 4v @ 250 ähm | 86 NC @ 10 V | ± 30 v | 1920 PF @ 100 V | - - - | 35W (TC) | ||||||
 | SIDR402DP-T1-RE3 | 2.3800 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 64,6a (TA), 100A (TC) | 4,5 V, 10 V. | 0,88 MOHM @ 20A, 10 V. | 2,3 V @ 250 ähm | 165 NC @ 10 V. | +20V, -16v | 9100 PF @ 20 V | - - - | 6,25W (TA), 125W (TC) | ||||||
| SQJ476EP-T1_BE3 | 0,9400 | | 3693 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ476EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 23a (TC) | 4,5 V, 10 V. | 38mohm @ 10a, 10V | 2,5 V @ 250 ähm | 20 nc @ 10 v | ± 20 V | 700 PF @ 25 V. | - - - | 45W (TC) | |||||
| SQJ850EP-T2_GE3 | 1.4600 | | 3684 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ850EP-T2_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 24a (TC) | 4,5 V, 10 V. | 23mohm @ 10.3a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1225 PF @ 30 V | - - - | 45W (TC) | |||||
| SI2343D-T1-BE3 | 0,6300 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 30 v | 3.1a (ta) | 4,5 V, 10 V. | 53mohm @ 4a, 10V | 3v @ 250 ähm | 21 NC @ 10 V | ± 20 V | 540 PF @ 15 V | - - - | 750 MW (TA) | ||||||
| SQJ418EP-T1_BE3 | 1.1800 | | 5041 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ418EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 48a (TC) | 10V | 14mohm @ 10a, 10V | 3,5 V @ 250 ähm | 35 NC @ 10 V | ± 20 V | 1700 PF @ 25 V. | - - - | 68W (TC) | |||||
 | SIHB28N60EF-T5-GE3 | 6.2000 | | 6563 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB28N60EF-T5-GE3TR | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 28a (TC) | 10V | 123mohm @ 14a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 30 v | 2714 PF @ 100 V | - - - | 250 W (TC) | |||||
| SQJA72EP-T1_BE3 | 1.4100 | | 3317 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA72EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 37a (TC) | 4,5 V, 10 V. | 19Mohm @ 10a, 10V | 2,5 V @ 250 ähm | 30 NC @ 10 V | ± 20 V | 1390 PF @ 25 V. | - - - | 55W (TC) | |||||
| SIHA22N60EL-GE3 | 4.1700 | | 1511 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA22N60EL-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 21a (TC) | 10V | 197mohm @ 11a, 10V | 5 V @ 250 ähm | 74 NC @ 10 V | ± 30 v | 1690 PF @ 100 V | - - - | 35W (TC) | |||||
| Sihfbe30Strl-GE3 | 1.8400 | | 800 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHFBE30Strl-GE3TR | Ear99 | 8541.29.0095 | 800 | N-Kanal | 800 V | 4.1a (TC) | 10V | 3OHM @ 2,5a, 10V | 4v @ 250 ähm | 78 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 125W (TC) | |||||
| SQJ980AEP-T1_BE3 | 1.1900 | | 9408 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ980 | MOSFET (Metalloxid) | 34W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJ980AEP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 75 V | 17a (TC) | 50MOHM @ 3,8a, 10V | 2,5 V @ 250 ähm | 21nc @ 10v | 790PF @ 35V | - - - | ||||||
| SQJ414EP-T1_BE3 | 0,9400 | | 1352 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJ414EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 30a (TC) | 4,5 V, 10 V. | 12mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 25 NC @ 10 V | ± 20 V | 1110 PF @ 15 V | - - - | 45W (TC) | |||||
| SIHA17N80E-GE3 | 4.8600 | | 1 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA17N80E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 6a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 122 NC @ 10 V | ± 30 v | 2408 PF @ 100 V | - - - | 35W (TC) | |||||
| SI2333CDS-T1-BE3 | 0,6200 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 12 v | 5.1a (TA), 7.1a (TC) | 1,8 V, 4,5 V. | 35mohm @ 5.1a, 4,5 V. | 1V @ 250 ähm | 25 NC @ 4,5 V. | ± 8 v | 1225 PF @ 6 V | - - - | 1,25W (TA), 2,5W (TC) | ||||||
| SIDR638DP-T1-RE3 | 2.2700 | | 9935 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | 1 (unbegrenzt) | 742-SIDR638DP-T1-RE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 40 v | 64,6a (TA), 100A (TC) | 4,5 V, 10 V. | 0,88 MOHM @ 20A, 10 V. | 2,3 V @ 250 ähm | 204 NC @ 10 V. | +20V, -16v | 10500 PF @ 20 V | - - - | 6,25W (TA), 125W (TC) | |||||
| SQJA04EP-T1_BE3 | 1.1900 | | 4084 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-sqja04ep-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 75a (TC) | 10V | 6,2 Mohm @ 10a, 10 V | 3,5 V @ 250 ähm | 55 NC @ 10 V | ± 20 V | 3500 PF @ 25 V. | - - - | 68W (TC) | |||||
| SQ3469ev-T1_BE3 | 0,6200 | | 8 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-sq3469ev-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 8a (TC) | 4,5 V, 10 V. | 36mohm @ 6.7a, 10V | 2,5 V @ 25 ähm | 27 NC @ 10 V | ± 20 V | 1020 PF @ 10 V | - - - | 5W (TC) | |||||
| SI2305CDS-T1-BE3 | 0,4300 | | 1501 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2305CDS-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 8 v | 4,4a (TA), 5,8a (TC) | 1,8 V, 4,5 V. | 35mohm @ 4,4a, 4,5 V. | 1V @ 250 ähm | 30 NC @ 8 V | ± 8 v | 960 PF @ 4 V. | - - - | 960 MW (TA), 1,7W (TC) | |||||
 | SIHP35N60E-Be3 | 6.0500 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 32a (TC) | 10V | 94mohm @ 17a, 10V | 4v @ 250 ähm | 132 NC @ 10 V | ± 30 v | 2760 PF @ 100 V | - - - | 250 W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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