- RFQ
- Bom
- Kontaktieren Sie uns
Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
- chinesisch
- Englisch
- Französisch
- Deutsch
- Portugiesisch
- Spanisch
- Russisch
- japanisch
- Koreanisch
- Arabisch
- irisch
- griechisch
- Türkisch
- Italienisch
- dänisch
- rumänisch
- Indonesisch
- tschechisch
- Afrikaans
- Schwedisch
- Polieren
- baskisch
- katalanisch
- Esperanto
- Hindi
- Lao
- albanisch
- Amharisch
- Armenisch
- Aserbaidschani
- Weißrussland
- Bengali
- bosnisch
- bulgarisch
- Cebuano
- Chichewa
- Korsiker
- kroatisch
- Niederländisch
- estnisch
- Filipino
- finnisch
- Friesisch
- galizisch
- georgisch
- Gujarati
- haitianisch
- Hausa
- hawaiisch
- hebräisch
- Hmong
- ungarisch
- isländisch
- Igbo
- Javaner
- Kannada
- Kasachisch
- Khmer
- kurdisch
- Kirgisische
- lateinisch
- lettisch
- litauisch
- Luxembou ..
- mazedonisch
- Madagasy
- malaiisch
- Malayalam
- maltesisch
- Maori
- Marathi
- mongolisch
- birmanisch
- Nepali
- norwegisch
- PaShto
- persisch
- Punjabi
- serbisch
- Sesotho
- Sinhala
- slowakisch
- Slowenisch
- somali
- Samoaner
- Schotten gälisch
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- ukrainisch
- Urdu
- Usbekisch
- Vietnamesisch
- Walisisch
- Xhosa
- Jiddisch
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHA4N80E-GE3 | 1.0457 |  | 5969 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha4 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 4.3a (TC) | 10V | 1,27OHM @ 2a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 30 v | 622 PF @ 100 V | - - - | 69W (TC) | |||||
 | SI4894BDY-T1-GE3 | 1.2900 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4894 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 8.9a (TA) | 4,5 V, 10 V. | 11Mohm @ 12a, 10V | 3v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1580 PF @ 15 V | - - - | 1.4W (TA) | |||||
 | SIHF30N60E-GE3 | 6.1200 | | 1 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | SIHF30 | MOSFET (Metalloxid) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 29a (TC) | 10V | 125mohm @ 15a, 10V | 4v @ 250 ähm | 130 nc @ 10 v | ± 30 v | 2600 PF @ 100 V | - - - | 37W (TC) | ||||||
 | SIB912DK-T1-GE3 | 0,5100 | | 75 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-75-6L Dual | SIB912 | MOSFET (Metalloxid) | 3.1W | Powerpak® SC-75-6L Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 1,5a | 216mohm @ 1,8a, 4,5 V. | 1V @ 250 ähm | 3nc @ 8v | 95PF @ 10V | Logikpegel -tor | |||||||
 | SQJ126EP-T1_GE3 | 1.7300 | | 8647 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SQJ126EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 500A (TC) | 10V | 0,94 MOHM @ 15a, 10 V. | 3,5 V @ 250 ähm | 152 NC @ 10 V | ± 20 V | 8095 PF @ 25 V. | - - - | 500W (TC) | |||||
 | SI7866ADP-T1-GE3 | - - - | | 5178 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7866 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 40a (TC) | 4,5 V, 10 V. | 2,4 MOHM @ 20A, 10V | 2,2 V @ 250 ähm | 125 NC @ 10 V | ± 20 V | 5415 PF @ 10 V | - - - | 5.4W (TA), 83W (TC) | |||||
 | SIE844DF-T1-GE3 | - - - | | 2414 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 10-polarpak® (U) | Sie844 | MOSFET (Metalloxid) | 10-polarpak® (U) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 44,5a (TC) | 4,5 V, 10 V. | 7mohm @ 12.1a, 10V | 3v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2150 PF @ 15 V | - - - | 5.2W (TA), 25W (TC) | ||||
 | SI7218DN-T1-E3 | - - - | | 4083 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SI7218 | MOSFET (Metalloxid) | 23W | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 30V | 24a | 25mohm @ 8a, 10V | 3v @ 250 ähm | 17nc @ 10v | 700PF @ 15V | - - - | |||||||
 | SQJ461EP-T1_GE3 | 2.9100 | | 8209 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJ461 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 30a (TC) | 4,5 V, 10 V. | 16mohm @ 14.4a, 10V | 2,5 V @ 250 ähm | 140 nc @ 10 v | ± 20 V | 4710 PF @ 30 V | - - - | 83W (TC) | |||||
 | Irfiz14gpbf | 1.6400 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack, Isolierte RegisterKarte | Irfiz14 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *Irfiz14gpbf | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 8a (TC) | 10V | 200mohm @ 4.8a, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 300 PF @ 25 V. | - - - | 27W (TC) | ||||
 | SIZ904DT-T1-GE3 | 0,4969 | | 9768 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerpair ™ | Siz904 | MOSFET (Metalloxid) | 20W, 33W | 6-Powerpair ™ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Halbe Brücke) | 30V | 12a, 16a | 24MOHM @ 7.8a, 10V | 2,5 V @ 250 ähm | 12nc @ 10v | 435PF @ 15V | Logikpegel -tor | |||||||
 | SQ2351ES-T1_GE3 | 0,6000 | | 21 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2351 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.2a (TC) | 2,5 V, 4,5 V. | 115mohm @ 2,4a, 4,5 V. | 1,5 V @ 250 ähm | 5,5 NC @ 4,5 V | ± 12 V | 330 PF @ 10 V. | - - - | 2W (TC) | |||||
 | IRFUC20PBF | 1.6000 | | 9 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | Irfuc20 | MOSFET (Metalloxid) | To-251aa | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *IRFUC20PBF | Ear99 | 8541.29.0095 | 75 | N-Kanal | 600 V | 2a (TC) | 10V | 4,4ohm @ 1,2a, 10 V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
 | SI3442BDV-T1-E3 | 0,5900 | | 32 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3442 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 3a (ta) | 2,5 V, 4,5 V. | 57mohm @ 4a, 4,5 V. | 1,8 V @ 250 ähm | 5 NC @ 4,5 V. | ± 12 V | 295 PF @ 10 V. | - - - | 860 MW (TA) | |||||
 | SQJQ466E-T1_GE3 | 2.8100 | | 7656 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | SQJQ466 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 60 v | 200a (TC) | 10V | 1,9 MOHM @ 10a, 10V | 3,5 V @ 250 ähm | 180 nc @ 10 v | ± 20 V | 10210 PF @ 25 V. | - - - | 150W (TC) | |||||
 | Sizf906DT-T1-GE3 | 1.6700 | | 16 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TA) | Oberflächenhalterung | 8-Powerwdfn | Sizf906 | MOSFET (Metalloxid) | 38W (TC), 83W (TC) | 8-Powerpair® (6x5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Halbe Brücke) | 30V | 60a (TC) | 3,8 MOHM @ 15a, 10 V, 1,17 MOHM @ 20A, 10 V. | 2,2 V @ 250 ähm | 22nc @ 4,5V, 92nc @ 4,5 V. | 2000pf @ 15V, 8200PF @ 15V | - - - | |||||||
 | SI7949DP-T1-GE3 | 1.6400 | | 9164 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SI7949 | MOSFET (Metalloxid) | 1,5W | Powerpak® SO-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 60 v | 3.2a | 64mohm @ 5a, 10V | 3v @ 250 ähm | 40nc @ 10v | - - - | Logikpegel -tor | |||||||
 | IRFBF30Strr | - - - | | 8102 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRFBF30 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 900 V | 3.6a (TC) | 10V | 3,7OHM @ 2,2a, 10 V | 4v @ 250 ähm | 78 NC @ 10 V | ± 20 V | 1200 PF @ 25 V. | - - - | 125W (TC) | |||||
| IRF820AStrl | - - - | | 6010 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Irf820 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 500 V | 2,5a (TC) | 10V | 3OHM @ 1,5a, 10V | 4,5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 340 PF @ 25 V. | - - - | 50W (TC) | |||||
 | IRFR9014PBF | 1.1100 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9014 | MOSFET (Metalloxid) | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 75 | P-Kanal | 60 v | 5.1a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
 | SIB422EDK-T1-GE3 | 0,5100 | | 8315 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-75-6 | SIB422 | MOSFET (Metalloxid) | Powerpak® SC-75-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 9a (TC) | 1,5 V, 4,5 V. | 30mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 18 NC @ 8 V | ± 8 v | - - - | 2,5 W (TA), 13W (TC) | ||||||
 | IRFPG40PBF | 5.7000 | | 68 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | IRFPG40 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *IRFPG40PBF | Ear99 | 8541.29.0095 | 25 | N-Kanal | 1000 v | 4.3a (TC) | 10V | 3,5OHM @ 2,6a, 10V | 4v @ 250 ähm | 120 nc @ 10 v | ± 20 V | 1600 PF @ 25 V. | - - - | 150W (TC) | ||||
 | SIHA24N80AE-GE3 | 3.4600 | | 794 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha24 | MOSFET (Metalloxid) | To-220 Full Pack | - - - | 1 (unbegrenzt) | 742-SIHA24N80AE-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 9a (TC) | 184mohm @ 10a, 10V | 4v @ 250 ähm | 89 NC @ 10 V | ± 30 v | 1836 PF @ 100 V. | - - - | 35W (TC) | ||||||
| SIHB12N50E-GE3 | 2.3900 | | 5146 | 0.00000000 | Vishay Siliconix | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB12 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 10.5a (TC) | 10V | 380Mohm @ 6a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 30 v | 886 PF @ 100 V | - - - | 114W (TC) | |||||
| IRFU9310 | - - - | | 6266 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | IRFU9 | MOSFET (Metalloxid) | To-251aa | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRFU9310 | Ear99 | 8541.29.0095 | 75 | P-Kanal | 400 V | 1,8a (TC) | 10V | 7ohm @ 1.1a, 10V | 4v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 50W (TC) | |||
 | SI5404BDC-T1-GE3 | - - - | | 9695 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-smd, Flaches Blei | SI5404 | MOSFET (Metalloxid) | 1206-8 Chipfet ™ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 5.4a (TA) | 2,5 V, 4,5 V. | 28mohm @ 5,4a, 4,5 V. | 1,5 V @ 250 ähm | 11 NC @ 4,5 V. | ± 12 V | - - - | 1,3W (TA) | |||||
| IRLR120TRLPBF | 1.6500 | | 1367 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRLR120 | MOSFET (Metalloxid) | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 7.7a (TC) | 4V, 5V | 270 MOHM @ 4,6a, 5V | 2v @ 250 ähm | 12 NC @ 5 V | ± 10 V | 490 PF @ 25 V. | - - - | 42W (TC) | |||||
| SIR862DP-T1-GE3 | 0,6027 | | 4261 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir862 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 25 v | 50a (TC) | 4,5 V, 10 V. | 2,8 MOHM @ 15a, 10V | 2,3 V @ 250 ähm | 90 nc @ 10 v | ± 20 V | 3800 PF @ 10 V. | - - - | 5.2W (TA), 69W (TC) | |||||
 | IRFZ34PBF | 1.8800 | | 12 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Irfz34 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *Irfz34pbf | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 30a (TC) | 10V | 50mohm @ 18a, 10V | 4v @ 250 ähm | 46 NC @ 10 V | ± 20 V | 1200 PF @ 25 V. | - - - | 88W (TC) | ||||
| IRF9530 | - - - | | 8795 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRF9530 | MOSFET (Metalloxid) | To-220ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *IRF9530 | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 100 v | 12a (TC) | 10V | 300MOHM @ 7.2a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 860 PF @ 25 V. | - - - | 88W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
Wunschliste (0 Elemente)