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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SIHFZ48S-GE3 | 1.0810 |  | 4427 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHFZ48 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 60 v | 50a (TC) | 10V | 18mohm @ 43a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 2400 PF @ 25 V. | - - - | 3.7W (TA), 190 W (TC) | ||||
| SIHF530Strl-GE3 | 1.0700 | | 800 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHF530 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 14a (TC) | 10V | 160mohm @ 8.4a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 670 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | ||||
 | SIHG47N60AEF-GE3 | 8.7500 | | 2163 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | SIHG47 | MOSFET (Metalloxid) | To-247ac | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 40a (TC) | 10V | 70 MOHM @ 23.5A, 10V | 4v @ 250 ähm | 189 NC @ 10 V | ± 30 v | 3576 PF @ 100 V | - - - | 313W (TC) | ||||
 | SQ4425EY-T1_BE3 | 1.9300 | | 639 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4425 | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4425EY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 18a (TC) | 4,5 V, 10 V. | 12mohm @ 13a, 10V | 2,5 V @ 250 ähm | 50 NC @ 4,5 V. | ± 20 V | 3630 PF @ 25 V. | - - - | 6.8W (TC) | ||||
| SQ4840EY-T1_BE3 | 3.3100 | | 5093 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Lets Kaufen | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4840 | MOSFET (Metalloxid) | 8-soic | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 20,7a (TC) | 4,5 V, 10 V. | 9mohm @ 14a, 10V | 2,5 V @ 250 ähm | 62 NC @ 10 V | ± 20 V | 2440 PF @ 20 V | - - - | 7.1W (TC) | |||||
 | IRFL9110TRPBF-BE3 | 0,8800 | | 1456 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | IRFL9110 | MOSFET (Metalloxid) | SOT-223 | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 100 v | 1.1a (TC) | 10V | 1,2OHM @ 660 mA, 10V | 4v @ 250 ähm | 8.7 NC @ 10 V. | ± 20 V | 200 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
 | SQ7415aen-t1_be3 | - - - | | 9246 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SQ7415 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 16a (TC) | 4,5 V, 10 V. | 65mohm @ 5.7a, 10V | 2,5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1385 PF @ 25 V. | - - - | 53W (TC) | ||||||
| SQ4435EY-T1_BE3 | 1.4400 | | 8199 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4435 | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4435EY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 15a (TC) | 4,5 V, 10 V. | 18Mohm @ 8a, 10V | 2,5 V @ 250 ähm | 58 NC @ 10 V | ± 20 V | 2170 PF @ 15 V | - - - | 6.8W (TC) | ||||
| SQ4282EY-T1_BE3 | 1.5100 | | 92 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SQ4282 | MOSFET (Metalloxid) | 3.9W (TC) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4282EY-T1_BE3TR | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 30V | 8a (TC) | 12.3mohm @ 15a, 10V | 2,5 V @ 250 ähm | 47nc @ 10v | 2367PF @ 15V | - - - | ||||||
 | SQJ951EP-T1_BE3 | 1.6100 | | 4 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJ951 | MOSFET (Metalloxid) | 56W (TC) | Powerpak® SO-8 Dual | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 p-kanal (dual) | 30V | 30a (TC) | 17mohm @ 7.5a, 10V | 2,5 V @ 250 ähm | 50nc @ 10v | 1680pf @ 10v | - - - | ||||||
 | SQ2351ES-T1_BE3 | 0,6000 | | 8 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SQ2351 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-sq2351es-t1_be3tr | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 3.2a (TC) | 2,5 V, 4,5 V. | 115mohm @ 2,4a, 4,5 V. | 1,5 V @ 250 ähm | 5,5 NC @ 4,5 V | ± 12 V | 330 PF @ 10 V. | - - - | 2W (TC) | ||||
 | SQ3427aeev-t1_be3 | 0,7800 | | 812 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SQ3427 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 5.3a (TC) | 4,5 V, 10 V. | 95mohm @ 4,5a, 10V | 2,5 V @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 1000 PF @ 30 V | - - - | 5W (TC) | |||||
| SI3430DV-T1-BE3 | 1.2500 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3430 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 1,8a (ta) | 6 V, 10V | 170 MOHM @ 2,4a, 10V | 4,2 V @ 250 ähm | 8.2 NC @ 10 V | ± 20 V | - - - | 1.14W (TA) | ||||||
 | IRF530PBF-BE3 | 1.4000 | | 460 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | IRF530 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF530PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 14a (TC) | 10V | 160mohm @ 8.4a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 670 PF @ 25 V. | - - - | 88W (TC) | ||||
 | IRFRC20TRPBF-BE3 | 1.2900 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFRC20 | MOSFET (Metalloxid) | To-252aa | Herunterladen | 1 (unbegrenzt) | 742-IRFRC20TRPBF-BE3TR | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 600 V | 2a (TC) | 10V | 4,4ohm @ 1,2a, 10 V | 4v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||
 | IRF840APBF-BE3 | 1.9400 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | IRF840 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-IRF840APBF-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 8a (TC) | 10V | 850MOHM @ 4.8a, 10V | 4v @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1018 PF @ 25 V. | - - - | 125W (TC) | ||||
| SIHP17N80E-Be3 | 4.8400 | | 3082 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SIHP17 | MOSFET (Metalloxid) | To-220ab | - - - | 1 (unbegrenzt) | 742-SIHP17N80E-BE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 15a (TC) | 10V | 290MOHM @ 8.5A, 10V | 4v @ 250 ähm | 122 NC @ 10 V | ± 30 v | 2408 PF @ 100 V | - - - | 208W (TC) | ||||
| IRF830PBF-BE3 | 1.5800 | | 3 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf830 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | 742-IRF830PBF-BE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 4,5a (TC) | 10V | 1,5OHM @ 2,7a, 10 V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 610 PF @ 25 V. | - - - | 74W (TC) | ||||
| IRFR9014TRPBF-BE3 | 1.1100 | | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR9014 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 5.1a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 270 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||
 | SIHA186N60EF-GE3 | 2.8600 | | 1 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha186 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-siha186N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 8.4a (TC) | 10V | 193mohm @ 9.5a, 10V | 5 V @ 250 ähm | 32 NC @ 10 V | ± 30 v | 1081 PF @ 100 V | - - - | 156W (TC) | ||||
 | SIHB186N60EF-GE3 | 2.9600 | | 2 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB186 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | 742-SIHB186N60EF-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 8.4a (TC) | 10V | 193mohm @ 9.5a, 10V | 5 V @ 250 ähm | 32 NC @ 10 V | ± 30 v | 1081 PF @ 100 V | - - - | 156W (TC) | ||||
 | SIHH240N60E-T1-GE3 | 2.8000 | | 38 | 0.00000000 | Vishay Siliconix | EF | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | SIHH240 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIHH240N60E-T1-GE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 12a (TC) | 10V | 240 MOHM @ 5,5A, 10 V | 5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 783 PF @ 100 V | - - - | 89W (TC) | |||
 | SIR510DP-T1-RE3 | 2.2500 | | 10 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 31a (ta), 126a (TC) | 7,5 V, 10 V. | 3,6 MOHM @ 20A, 10V | 4v @ 250 ähm | 81 NC @ 10 V | ± 20 V | 4980 PF @ 50 V | - - - | 6.25W (TA), 104W (TC) | |||||
 | SIHP080N60E-GE3 | 4.3900 | | 958 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | Nicht Anwendbar | 742-SIHP080N60E-GE3 | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 35a (TC) | 10V | 80Mohm @ 17a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 2557 PF @ 100 V | - - - | 227W (TC) | ||||
 | SUM60061EL-GE3 | 5.9300 | | 1489 | 0.00000000 | Vishay Siliconix | Trenchfet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263 (d²pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-sum60061el-GE3 | Ear99 | 8541.29.0095 | 800 | P-Kanal | 80 v | 150a (TC) | 4,5 V, 10 V. | 6.1MOHM @ 20A, 10V | 2,5 V @ 250 ähm | 218 NC @ 10 V | ± 20 V | 9600 PF @ 40 V | - - - | 375W (TC) | ||||
 | SIA112LDJ-T1-GE3 | 0,7100 | | 5351 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | Sia112 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 3,5a (TA), 8,8a (TC) | 4,5 V, 10 V. | 14mohm @ 10a, 10V | 2,5 V @ 250 ähm | 11.8 NC @ 10 V. | ± 25 V | 355 PF @ 50 V | - - - | 2,9W (TA), 15,6 W (TC) | |||||
 | SISH107DN-T1-GE3 | 0,7700 | | 8555 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | SISH107 | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 12,6a (TA), 34,4a (TC) | 4,5 V, 10 V. | 4,8 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 41 nc @ 10 v | ± 20 V | 1400 PF @ 15 V | - - - | 3,57W (TA), 26,5 W (TC) | |||||
 | SIHA155N60EF-GE3 | 3.6600 | | 8042 | 0.00000000 | Vishay Siliconix | EF | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha155 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA155N60EF-GE3 | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 9a (TC) | 10V | 89mohm @ 3.7a, 10V | 5 V @ 250 ähm | 38 nc @ 10 v | ± 20 V | 1465 PF @ 100 V | - - - | 33W (TC) | ||||
| SIHH150N60E-T1-GE3 | 5.3800 | | 6149 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | SIHH150 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 600 V | 19A (TC) | 10V | 155mohm @ 10a, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1514 PF @ 100 V | - - - | 156W (TC) | |||||
 | SIJ4108DP-T1-GE3 | 1.7200 | | 3275 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIJ4108 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 15,2a (TA), 56,7a (TC) | 7,5 V, 10 V. | 52mohm @ 10a, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 20 V | 2440 PF @ 50 V | - - - | 5W (TA), 69,4W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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