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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | SIS892ADN-T1-GE3 | 1.0700 | ![]() | 2085 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | Sis892 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 28a (TC) | 4,5 V, 10 V. | 33mohm @ 10a, 10V | 3v @ 250 ähm | 19,5 NC @ 10 V. | ± 20 V | 550 PF @ 50 V | - - - | 3,7W (TA), 52W (TC) | |||||
![]() | IRFL110PBF | - - - | ![]() | 5730 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | Irfl110 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 100 v | 1,5a (TC) | 10V | 540MOHM @ 900 mA, 10V | 4v @ 250 ähm | 8.3 NC @ 10 V | ± 20 V | 180 PF @ 25 V. | - - - | 2W (TA), 3,1W (TC) | |||||
![]() | SI1406DH-T1-GE3 | - - - | ![]() | 5870 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | SI1406 | MOSFET (Metalloxid) | SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 3.1a (ta) | 1,8 V, 4,5 V. | 65mohm @ 3,9a, 4,5 V. | 1,2 V @ 250 ähm | 7,5 NC @ 4,5 V | ± 8 v | - - - | 1W (TA) | |||||
![]() | SI8901EDB-T2-E1 | - - - | ![]() | 1912 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Mikro-Foot®csp | SI8901 | MOSFET (Metalloxid) | 1W | 6-micro foot ™ (2.36x1.56) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 P-Kanal (Dual) Gemeinsamer Abfluss | 20V | 3.5a | - - - | 1 V @ 350 µA | - - - | - - - | Logikpegel -tor | ||||||
![]() | SIHB12N60ET1-GE3 | 1.2311 | ![]() | 9789 | 0.00000000 | Vishay Siliconix | E | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB12 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 600 V | 12a (TC) | 10V | 380Mohm @ 6a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 937 PF @ 100 V | - - - | 147W (TC) | ||||||
![]() | SI1071X-T1-E3 | - - - | ![]() | 5143 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | SI1071 | MOSFET (Metalloxid) | SC-89 (SOT-563F) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 30 v | 960 Ma (TA) | 2,5 V, 10 V. | 167mohm @ 960 mA, 10V | 1,45 V @ 250 ähm | 13.3 NC @ 10 V. | ± 12 V | 315 PF @ 15 V | - - - | 236 MW (TA) | ||||
IRF620PBF | 1.1700 | ![]() | 527 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Irf620 | MOSFET (Metalloxid) | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *IRF620PBF | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 5.2a (TC) | 10V | 800MOHM @ 3.1a, 10V | 4v @ 250 ähm | 14 NC @ 10 V | ± 20 V | 260 PF @ 25 V. | - - - | 50W (TC) | |||||
![]() | IRF644Strl | - - - | ![]() | 8130 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRF644 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 250 V | 14a (TC) | 10V | 280 MOHM @ 8.4a, 10V | 4v @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 1300 PF @ 25 V. | - - - | 3.1W (TA), 125W (TC) | ||||
![]() | IRL530Strl | - - - | ![]() | 3872 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRL530 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 100 v | 15a (TC) | 4V, 5V | 160MOHM @ 9A, 5V | 2v @ 250 ähm | 28 NC @ 5 V | ± 10 V | 930 PF @ 25 V. | - - - | 3.7W (TA), 88W (TC) | |||||
![]() | SIS902DN-T1-GE3 | - - - | ![]() | 2874 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | Sis902 | MOSFET (Metalloxid) | 15.4W | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 75 V | 4a | 186mohm @ 3a, 10V | 2,5 V @ 250 ähm | 6nc @ 10v | 175PF @ 38V | - - - | ||||||
![]() | Irfibe30GPBF | 2.8200 | ![]() | 1 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack, Isolierte RegisterKarte | Irfibe30 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | *Irfibe30gpbf | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 2.1a (TC) | 10V | 3OHM @ 1,3a, 10V | 4v @ 250 ähm | 78 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 35W (TC) | ||||
![]() | SIHB4N80E-GE3 | 1.1723 | ![]() | 9370 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | SIHB4 | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 4.3a (TC) | 10V | 1,27OHM @ 2a, 10V | 4v @ 250 ähm | 32 NC @ 10 V | ± 30 v | 622 PF @ 100 V | - - - | 69W (TC) | |||||
![]() | Siz704dt-T1-GE3 | 1.1300 | ![]() | 3 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerpair ™ | Siz704 | MOSFET (Metalloxid) | 20W, 30W | 6-Powerpair ™ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Halbe Brücke) | 30V | 12a, 16a | 24MOHM @ 7.8a, 10V | 2,5 V @ 250 ähm | 12nc @ 10v | 435PF @ 15V | Logikpegel -tor | |||||||
![]() | IRFR420TRPBF-BE3 | 1.2900 | ![]() | 1 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | IRFR420 | MOSFET (Metalloxid) | To-252aa | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 500 V | 2.4a (TC) | 10V | 3OHM @ 1,4a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 360 PF @ 25 V. | - - - | 2,5 W (TA), 42 W (TC) | ||||||
![]() | SI7483ADP-T1-GE3 | - - - | ![]() | 4065 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SI7483 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 14a (ta) | 4,5 V, 10 V. | 5.7mohm @ 24a, 10V | 3v @ 250 ähm | 180 nc @ 10 v | ± 20 V | - - - | 1,9W (TA) | |||||
![]() | IRF9610L | - - - | ![]() | 1325 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | IRF9610 | MOSFET (Metalloxid) | I2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | *IRF9610L | Ear99 | 8541.29.0095 | 50 | P-Kanal | 200 v | 1,8a (TC) | 10V | 3OHM @ 900 mA, 10V | 4v @ 250 ähm | 11 NC @ 10 V | ± 20 V | 170 PF @ 25 V. | - - - | - - - | ||||
![]() | Irf830l | - - - | ![]() | 2752 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Irf830 | MOSFET (Metalloxid) | I2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | *Irf830l | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 4,5a (TC) | 10V | 1,5OHM @ 2,7a, 10 V | 4v @ 250 ähm | 38 nc @ 10 v | ± 20 V | 610 PF @ 25 V. | - - - | 3.1W (TA), 74W (TC) | |||
![]() | SIHA25N60EFL-E3 | 2.4990 | ![]() | 8882 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Siha25 | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 25a (TC) | 10V | 146mohm @ 12.5a, 10V | 5 V @ 250 ähm | 75 NC @ 10 V | ± 30 v | 2274 PF @ 100 V | - - - | 39W (TC) | |||||
![]() | SQA401EEJ-T1_GE3 | 0,6300 | ![]() | 2 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SC-70-6 | SQA401 | MOSFET (Metalloxid) | Powerpak® SC-70-6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 2.68a (TC) | 2,5 V, 4,5 V. | 113mohm @ 2a, 4,5 V. | 1,5 V @ 250 ähm | 5.3 NC @ 4.5 V | ± 8 v | 375 PF @ 10 V. | - - - | 13.6W (TC) | |||||
![]() | Sira34DP-T1-GE3 | - - - | ![]() | 4692 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sira34 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 40a (TC) | 4,5 V, 10 V. | 6,7 MOHM @ 10A, 10V | 2,4 V @ 250 ähm | 25 NC @ 10 V | +20V, -16v | 1100 PF @ 15 V | - - - | 3,3 W (TA), 31,25W (TC) | |||||
![]() | IRF737LCSTRL | - - - | ![]() | 2436 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | - - - | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | IRF737 | MOSFET (Metalloxid) | D²pak (to-263) | - - - | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 800 | N-Kanal | 300 V | 6.1a (TC) | 10V | 750 MOHM @ 3,7A, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | - - - | |||||
![]() | SI2304BDS-T1-GE3 | 0,4700 | ![]() | 105 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SI2304 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 2.6a (TA) | 4,5 V, 10 V. | 70 MOHM @ 2,5a, 10 V | 3v @ 250 ähm | 4 NC @ 5 V. | ± 20 V | 225 PF @ 15 V | - - - | 750 MW (TA) | ||||
SIUD402ED-T1-GE3 | 0,4700 | ![]() | 6 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 0806 | SiUd402 | MOSFET (Metalloxid) | Powerpak® 0806 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 20 v | 1a (ta) | 1,5 V, 4,5 V. | 730MOHM @ 200 Ma, 4,5 V. | 900 MV @ 250 ähm | 1,2 NC @ 8 V. | ± 8 v | 16 PF @ 10 V | - - - | 1,25W (TA) | |||||||
![]() | SI3445DV-T1-E3 | - - - | ![]() | 7764 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3445 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 8 v | 5.6a (TA) | 1,8 V, 4,5 V. | 42mohm @ 5,6a, 4,5 V. | 1V @ 250 ähm | 25 NC @ 4,5 V. | ± 8 v | - - - | 2W (TA) | |||||
![]() | SI2309CDS-T1-BE3 | 0,5500 | ![]() | 24 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 1,2a (TA), 1,6a (TC) | 4,5 V, 10 V. | 345MOHM @ 1,25A, 10V | 3v @ 250 ähm | 4.1 NC @ 4.5 V. | ± 20 V | 210 PF @ 30 V | - - - | 1W (TA), 1,7W (TC) | |||||||
![]() | Irfiz46g | - - - | ![]() | 7235 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | - - - | K. Loch | To-220-3 Full Pack, Isolierte RegisterKarte | Irfiz46 | MOSFET (Metalloxid) | To-220-3 | - - - | Rohs Nick Konform | 1 (unbegrenzt) | *Irfiz46g | Ear99 | 8541.29.0095 | 50 | N-Kanal | 50 v | - - - | - - - | - - - | - - - | - - - | ||||||||
![]() | SISA18ADN-T1-GE3 | 0,6400 | ![]() | 45 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | Sisa18 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 38,3a (TC) | 4,5 V, 10 V. | 7,5 MOHM @ 10a, 10V | 2,4 V @ 250 ähm | 21,5 NC @ 10 V. | +20V, -16v | 1000 PF @ 15 V | - - - | 3,2 W (TA), 19,8W (TC) | |||||
![]() | SI3437DV-T1-E3 | 0,9300 | ![]() | 294 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | SI3437 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 150 v | 1.4a (TC) | 6 V, 10V | 750 MOHM @ 1,4a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 510 PF @ 50 V | - - - | 2W (TA), 3,2 W (TC) | |||||
![]() | SISS32DN-T1-GE3 | 1.3000 | ![]() | 17 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8s | SISS32 | MOSFET (Metalloxid) | Powerpak® 1212-8s | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 17,4a (TA), 63A (TC) | 7,5 V, 10 V. | 7,2 Mohm @ 10a, 10V | 3,8 V @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1930 PF @ 40 V. | - - - | 5W (TA), 65,7W (TC) | |||||
![]() | SI4398DY-T1-GE3 | - - - | ![]() | 3490 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4398 | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 20 v | 19a (ta) | 4,5 V, 10 V. | 2,8 MOHM @ 25a, 10V | 3v @ 250 ähm | 50 NC @ 4,5 V. | ± 20 V | 5620 PF @ 10 V | - - - | 1.6W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus