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Transistoren (5716)
| Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SQJB00EP-T1_BE3 | 1.3100 |  | 5243 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SQJB00 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJB00EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 30a (TC) | 13mohm @ 10a, 10V | 3,5 V @ 250 ähm | 35nc @ 10v | 1700pf @ 25v | - - - | ||||||
 | SIHFU310-GE3 | 0,6900 | | 2 | 0.00000000 | Vishay Siliconix | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | To-251aa | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 75 | N-Kanal | 400 V | 1.7a (TC) | 10V | 3,6OHM @ 1a, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 20 V | 170 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | ||||||
 | SI3476DV-T1-BE3 | 0,4700 | | 2625 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | 742-SI3476DV-T1-BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 3,5a (TA), 4,6a (TC) | 4,5 V, 10 V. | 93mohm @ 3,5a, 10V | 3v @ 250 ähm | 7,5 NC @ 10 V | ± 20 V | 195 PF @ 40 V. | - - - | 2W (TA), 3,6 W (TC) | |||||
 | SIHA6N65E-GE3 | 2.0400 | | 1 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA6N65E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 650 V | 7a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 48 nc @ 10 v | ± 30 v | 1640 PF @ 100 V | - - - | 31W (TC) | |||||
 | SI3443DDV-T1-BE3 | 0,4300 | | 5639 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | 6-tsop | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 4a (ta), 4a (TC) | 2,5 V, 4,5 V. | 47mohm @ 4,7a, 4,5 V. | 1,5 V @ 250 ähm | 30 NC @ 8 V | ± 12 V | 970 PF @ 10 V. | - - - | 1,7W (TA), 2,7W (TC) | ||||||
| SQJB44EP-T1_GE3 | 1.5800 | | 5490 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | SQJB44 | MOSFET (Metalloxid) | 48W (TC) | Powerpak® SO-8 Dual | Herunterladen | 1 (unbegrenzt) | 742-SQJB44EP-T1_GE3TR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 40V | 30a (TC) | 5.2mohm @ 8a, 10V | 2,2 V @ 250 ähm | 50nc @ 10v | 3075PF @ 25V | - - - | ||||||
 | SQJA20EP-T1_BE3 | 1.4700 | | 3641 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | 1 (unbegrenzt) | 742-SQJA20EP-T1_BE3TR | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 200 v | 22,5a (TC) | 7,5 V, 10 V. | 50mohm @ 10a, 10V | 3,5 V @ 250 ähm | 27 NC @ 10 V | ± 20 V | 1300 PF @ 25 V. | - - - | 68W (TC) | |||||
 | SI2302CDS-T1-BE3 | 0,4100 | | 2031 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 2.6a (TA) | 2,5 V, 4,5 V. | 57mohm @ 3,6a, 4,5 V. | 850 MV @ 250 ähm | 5,5 NC @ 4,5 V | ± 8 v | - - - | 710 MW (TA) | |||||||
| SIHA18N60E-GE3 | 3.1700 | | 2565 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220 Full Pack | Herunterladen | 1 (unbegrenzt) | 742-SIHA18N60E-GE3TR | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 18a (TC) | 10V | 202mohm @ 9a, 10V | 4v @ 250 ähm | 92 NC @ 10 V | ± 30 v | 1640 PF @ 100 V | - - - | 34W (TC) | |||||
| SI2367DS-T1-BE3 | 0,4100 | | 7592 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 (to-236) | Herunterladen | 1 (unbegrenzt) | 742-SI2367D-T1-BE3TR | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 2,8a (TA), 3,8a (TC) | 1,8 V, 4,5 V. | 66mohm @ 2,5a, 4,5 V. | 1V @ 250 ähm | 23 NC @ 8 V | ± 8 v | 561 PF @ 10 V | - - - | 960 MW (TA), 1,7W (TC) | |||||
 | SIHP14N60E-Be3 | 2.3600 | | 978 | 0.00000000 | Vishay Siliconix | E | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 13a (TC) | 10V | 309mohm @ 7a, 10V | 4v @ 250 ähm | 64 NC @ 10 V | ± 30 v | 1205 PF @ 100 V | - - - | 147W (TC) | ||||||
 | SIS4604LDN-T1-GE3 | 0,9300 | | 2 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen IV | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 | SIS4604 | MOSFET (Metalloxid) | Powerpak® 1212-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 15,1a (TA), 45,9a (TC) | 4,5 V, 10 V. | 8,9mohm @ 10a, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 20 V | 1180 PF @ 30 V | - - - | 3,6 W (TA), 33,7W (TC) | ||||
 | Sizf5300DT-T1-GE3 | 2.0700 | | 6 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-Powerpair ™ | Sizf5300 | MOSFET (Metalloxid) | 4,5W (TA), 56,8W (TC) | PowerPair® 3x3fs | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | 2 N-Kanal (Dual) Gemeinsame Quelle | 30V | 35A (TA), 125A (TC) | 2,43 MOHM @ 10a, 10 V | 2v @ 250 ähm | 32nc @ 10v | 1480pf @ 15V | - - - | ||||||
 | SIDR5802EP-T1-RE3 | 2.8700 | | 5 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sidr5802 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 80 v | 34,2a (TA), 153a (TC) | 7,5 V, 10 V. | 2,9 MOHM @ 20A, 10V | 4v @ 250 ähm | 60 nc @ 10 v | ± 20 V | 3020 PF @ 40 V | - - - | 7,5 W (TA), 150 W (TC) | ||||
| SIDR5102EP-T1-RE3 | 2.9900 | | 4824 | 0.00000000 | Vishay Siliconix | Trenchfet® Gen v | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sidr5102 | MOSFET (Metalloxid) | Powerpak® SO-8DC | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 28,2a (TA), 126a (TC) | 7,5 V, 10 V. | 4.1MOHM @ 20A, 10V | 4v @ 250 ähm | 51 NC @ 10 V | ± 20 V | 2850 PF @ 50 V | - - - | 7,5 W (TA), 150 W (TC) | ||||
 | SIR184LDP-T1-RE3 | 1.5300 | | 40 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 21,5a (TA), 73A (TC) | 4,5 V, 10 V. | 5.4mohm @ 10a, 10V | 3v @ 250 ähm | 41 nc @ 10 v | ± 20 V | 1950 PF @ 30 V | - - - | 5W (TA), 56,8W (TC) | |||||
 | SQS141LNW-T1_GE3 | 1.0300 | | 4391 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® 1212-8slw | MOSFET (Metalloxid) | Powerpak® 1212-8slw | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 40 v | 101a (TC) | 4,5 V, 10 V. | 10mohm @ 10a, 10V | 2,5 V @ 250 ähm | 141 NC @ 10 V | ± 20 V | 7458 PF @ 25 V. | - - - | 192W (TC) | |||||
 | SQJQ184E-T1_GE3 | 3.5500 | | 3708 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® 8 x 8 | MOSFET (Metalloxid) | Powerpak® 8 x 8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 80 v | 430a (TC) | 10V | 1,4mohm @ 20a, 10V | 3,5 V @ 250 ähm | 272 NC @ 10 V | ± 20 V | 16010 PF @ 25 V. | - - - | 600W (TC) | |||||
 | SISHA06DN-T1-GE3 | 1.0200 | | 12 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8sh | MOSFET (Metalloxid) | Powerpak® 1212-8sh | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 28.1a (TA), 104a (TC) | 4,5 V, 10 V. | 3mohm @ 10a, 10V | 2,4 V @ 250 ähm | 67 NC @ 10 V | +20V, -16v | 3932 PF @ 15 V | - - - | 3,7W (TA), 52W (TC) | |||||
 | SQ4850CEY-T1_GE3 | 1.0500 | | 8013 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4850CEY-T1_GE3TR | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 22mohm @ 6a, 10V | 2,5 V @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1375 PF @ 25 V. | - - - | 6.8W (TC) | |||||
| SQ4401CEY-T1_GE3 | 1.2300 | | 8343 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | 1 (unbegrenzt) | 742-SQ4401CEY-T1_GE3CT | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 40 v | 17.3a (TC) | 4,5 V, 10 V. | 14mohm @ 10.5a, 10V | 2,5 V @ 250 ähm | 115 NC @ 10 V | ± 20 V | 4250 PF @ 20 V | - - - | 7.14W (TC) | |||||
 | SIS9634LDN-T1-GE3 | 1.2600 | | 8140 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® 1212-8 Dual | SIS9634 | MOSFET (Metalloxid) | 2,5 W (TA), 17,9 W (TC) | Powerpak® 1212-8 Dual | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 742-SIS9634LDN-T1-GE3DKR | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 60 v | 6a (ta), 6a (TC) | 31mohm @ 5a, 10V | 3v @ 250 ähm | 11nc @ 10v | 420pf @ 30v | - - - | |||||
 | SIR5623DP-T1-RE3 | 1.7100 | | 4432 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir5623 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 60 v | 10,5a (TA), 37,1a (TC) | 4,5 V, 10 V. | 24MOHM @ 10a, 10V | 2,6 V @ 250 ähm | 33 NC @ 10 V. | ± 20 V | 1575 PF @ 30 V | - - - | 4,8W (TA), 59,5W (TC) | ||||
| SIRS4301DP-T1-GE3 | 3.4700 | | 7455 | 0.00000000 | Vishay Siliconix | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | SIRS4301 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 53,7a (TA), 227a (TC) | 4,5 V, 10 V. | 1,5 MOHM @ 20A, 10V | 2,3 V @ 250 ähm | 255 NC @ 4,5 V | ± 20 V | 19750 PF @ 15 V | - - - | 7.4W (TA), 132W (TC) | ||||
 | SIR5112DP-T1-RE3 | 1,8000 | | 7663 | 0.00000000 | Vishay Siliconix | Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 | Sir5112 | MOSFET (Metalloxid) | Powerpak® SO-8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 100 v | 12,6a (TA), 42,6a (TC) | 7,5 V, 10 V. | 14,9 MOHM @ 10a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 20 V | 790 PF @ 50 V | - - - | 5W (TA), 56,8W (TC) | ||||
| SQA310CEJW-T1_GE3 | 0,4700 | | 9729 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® SC-70-6 | MOSFET (Metalloxid) | Powerpak®SC-70W-6 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | N-Kanal | 30 v | 9a (TC) | 4,5 V, 10 V. | 19Mohm @ 3a, 10V | 2,5 V @ 250 ähm | 12 NC @ 10 V | ± 20 V | 535 PF @ 25 V. | - - - | 13.6W (TC) | |||||||
| SQS180LNW-T1_GE3 | 1.1200 | | 50 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Geniv | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® 1212-8slw | MOSFET (Metalloxid) | Powerpak® 1212-8slw | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | N-Kanal | 80 v | 82a (TC) | 4,5 V, 10 V. | 7.1Mohm @ 10a, 10V | 2,5 V @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 3689 PF @ 25 V. | - - - | 119W (TC) | |||||||
| SQS180Enw-t1_GE3 | 1.0600 | | 9668 | 0.00000000 | Vishay Siliconix | Automobil, AEC-Q101, Trenchfet® Geniv | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | Powerpak® 1212-8slw | MOSFET (Metalloxid) | Powerpak® 1212-8slw | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | N-Kanal | 80 v | 72a (TC) | 10V | 8.67Mohm @ 10a, 10V | 3,5 V @ 250 ähm | 56 NC @ 10 V | ± 20 V | 3092 PF @ 25 V. | - - - | 119W (TC) | |||||||
| SQJ740EP-T1_GE3 | 1.9200 | | 50 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, Trenchfet® | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | Powerpak® SO-8 Dual | MOSFET (Metalloxid) | 93W (TC) | Powerpak® SO-8L Dual BWL | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | 3.000 | 2 N-Kanal | 40V | 123a (TC) | 3.4mohm @ 7a, 10V | 3,5 V @ 250 ähm | 56nc @ 10v | 3143pf @ 25v | Standard | |||||||||
 | SIHB150N60E-GE3 | 3.8500 | | 9880 | 0.00000000 | Vishay Siliconix | E | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1.000 | N-Kanal | 600 V | 22a (TC) | 10V | 158mohm @ 10a, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1514 PF @ 100 V | - - - | 179W (TC) |
2000+
Täglich durchschnittliches RFQ -Volumen
30.000.000
Standardprodukteinheit
2800+
Weltweite Hersteller
15.000 m2
Lagerhaus
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