Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | TSM018NB03CR | 1.8542 | ![]() | 9217 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | TSM018 | MOSFET (Metalloxid) | 8-PDFN (5x6) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM018NB03CRTR | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 30 v | 29a (TA), 194a (TC) | 4,5 V, 10 V. | 1,8 MOHM @ 29A, 10V | 2,5 V @ 250 ähm | 120 nc @ 10 v | ± 20 V | 7252 PF @ 15 V | - - - | 3.1W (TA), 136W (TC) | |||||||||||
![]() | TSM10ND60CI | 2.2540 | ![]() | 7664 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack, Isolierte RegisterKarte | TSM10 | MOSFET (Metalloxid) | Ito-220 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM10ND60CI | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 600 V | 10a (TC) | 10V | 600mohm @ 3a, 10V | 3,8 V @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1928 PF @ 50 V. | - - - | 56,8W (TC) | |||||||||||
![]() | TSM10NC60CF | 1.6128 | ![]() | 3171 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | TSM10 | MOSFET (Metalloxid) | Ito-220s | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM10NC60CF | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 600 V | 10a (TC) | 10V | 750 MOHM @ 2,5A, 10V | 4,5 V @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1652 PF @ 50 V | - - - | 45W (TC) | |||||||||||
![]() | TSM6866SDCA | 0,7448 | ![]() | 7221 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | TSM6866 | MOSFET (Metalloxid) | 1.6W (TC) | 8-tssop | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM6866SDCATR | Ear99 | 8541.29.0095 | 12.000 | 2 N-Kanal | 20V | 6a (ta) | 30mohm @ 6a, 4,5 V. | 0,6 V @ 250 ähm | 7nc @ 4,5V | 565PF @ 8v | Standard | |||||||||||||
![]() | TSM1NB60CW | 0,6145 | ![]() | 1762 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | TSM1 | MOSFET (Metalloxid) | SOT-223 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM1NB60CWTR | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 600 V | 1a (TC) | 10V | 10ohm @ 500 mA, 10V | 4,5 V @ 250 ähm | 6.1 NC @ 10 V | ± 30 v | 138 PF @ 25 V. | - - - | 2.1W (TC) | |||||||||||
![]() | TSM60NB099CZ | 7.8920 | ![]() | 8258 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | TSM60 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM60NB099CZ | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 600 V | 38a (TC) | 10V | 99mohm @ 11.3a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 30 v | 2587 PF @ 100 V | - - - | 298W (TC) | |||||||||||
![]() | TSM680P06DPQ56 | 1.0636 | ![]() | 4462 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | TSM680 | MOSFET (Metalloxid) | 3,5 W (TC) | 8-PDFN (5x6) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM680P06DPQ56TR | Ear99 | 8541.29.0095 | 5.000 | 2 P-Kanal | 60 v | 12a (TC) | 68mohm @ 6a, 10V | 2,5 V @ 250 ähm | 16.4nc @ 10v | 870PF @ 30V | Standard | |||||||||||||
![]() | TSM090N03ECP | 0,7000 | ![]() | 6718 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | TSM090 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM090N03ECPTR | Ear99 | 8541.29.0095 | 5.000 | N-Kanal | 30 v | 50a (TC) | 4,5 V, 10 V. | 9mohm @ 16a, 10V | 2,5 V @ 250 ähm | 7,7 NC @ 4,5 V. | ± 20 V | 680 PF @ 25 V. | - - - | 40W (TC) | |||||||||||
![]() | TSM250N02DCQ | 0,3925 | ![]() | 8097 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | TSM250 | MOSFET (Metalloxid) | 620 MW (TC) | 6-TDFN (2x2) | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | 1801-TSM250N02DCQTR | Ear99 | 8541.29.0095 | 12.000 | 2 N-Kanal | 20V | 5.8a (TC) | 25mohm @ 4a, 4,5 V. | 0,8 V @ 250 ähm | 11nc @ 4,5V | 775PF @ 10V | Standard | ||||||||||||
![]() | TSM150NB04LCV | 0,5871 | ![]() | 9527 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | TSM150 | MOSFET (Metalloxid) | 8-PDFN (3.15x3.1) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM150NB04LCVTR | Ear99 | 8541.29.0095 | 10.000 | N-Kanal | 40 v | 8A (TA), 36A (TC) | 4,5 V, 10 V. | 15mohm @ 8a, 10V | 2,5 V @ 250 ähm | 19 NC @ 10 V | ± 20 V | 1013 PF @ 20 V | - - - | 1,9W (TA), 39W (TC) | |||||||||||
![]() | TSM150P04LCS | 1.1755 | ![]() | 7311 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | TSM150 | MOSFET (Metalloxid) | 8-Sop | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM150P04LCSTR | Ear99 | 8541.29.0095 | 5.000 | P-Kanal | 40 v | 9a (ta), 22a (TC) | 4,5 V, 10 V. | 15mohm @ 9a, 10V | 2,5 V @ 250 ähm | 48 nc @ 10 v | ± 20 V | 2783 PF @ 20 V | - - - | 2,2 W (TA), 12,5 W (TC) | |||||||||||
![]() | TSM160P02Cs | 0,6916 | ![]() | 3163 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | TSM160 | MOSFET (Metalloxid) | 8-Sop | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM160P02CSTR | Ear99 | 8541.29.0095 | 5.000 | P-Kanal | 20 v | 11a (TC) | 1,8 V, 4,5 V. | 16mohm @ 6a, 4,5 V. | 1V @ 250 ähm | 27 NC @ 4,5 V. | ± 10 V | 2320 PF @ 15 V | - - - | 2,5 W (TC) | |||||||||||
![]() | TSM6968DCA | 0,7714 | ![]() | 7202 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | TSM6968 | MOSFET (Metalloxid) | 1.04W (TA) | 8-tssop | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM6968DCATR | Ear99 | 8541.29.0095 | 12.000 | 2 N-Kanal | 20V | 6,5a (ta) | 22mohm @ 6a, 4,5 V. | 1V @ 250 ähm | 20nc @ 4,5 V | 950pf @ 10v | Standard | |||||||||||||
![]() | TSM60NC620CH C5G | 3.6900 | ![]() | 1910 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | TSM60 | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1801-TSM60NC620CHC5G | 15.000 | N-Kanal | 600 V | 7a (TC) | 10V | 620mohm @ 2,4a, 10V | 5v @ 1ma | 15 NC @ 10 V | ± 20 V | 501 PF @ 300 V | - - - | 78W (TC) | |||||||||||||
![]() | TSM60NC980CH C5G | 3.0700 | ![]() | 13 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | TSM60 | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | 1801-TSM60NC980CHC5G | Ear99 | 8541.29.0095 | 15.000 | N-Kanal | 600 V | 4a (TC) | 10V | 980 MOHM @ 1,5A, 10V | 5v @ 1ma | 11 NC @ 10 V | ± 20 V | 330 PF @ 300 V | - - - | 57W (TC) | |||||||||||
![]() | TSM4NB65CP ROG | 2.1200 | ![]() | 34 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | TSM4NB65 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 650 V | 4a (TC) | 10V | 3.37ohm @ 2a, 10V | 4,5 V @ 250 ähm | 13.46 NC @ 10 V | ± 30 v | 549 PF @ 25 V. | - - - | 70W (TC) | |||||||||||
![]() | BC847CW | 0,0357 | ![]() | 7744 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | BC847 | 200 MW | SOT-323 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-BC847CWTR | Ear99 | 8541.21.0075 | 18.000 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 100 MHz | |||||||||||||||
![]() | TSM230N06CZ C0G | - - - | ![]() | 5156 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | TSM230N06CZC0G | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 50a (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 2,5 V @ 250 ähm | 28 NC @ 10 V | ± 20 V | 1680 PF @ 25 V. | - - - | 104W (TC) | |||||||||||
![]() | BC549B A1 | - - - | ![]() | 7605 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Box (TB) | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92 | Herunterladen | UnberÜHrt Ereichen | 1801-BC549BA1TB | Veraltet | 1 | 30 v | 100 ma | 15NA (ICBO) | Npn | - - - | 200 @ 2MA, 5V | - - - | ||||||||||||||||||
![]() | TSM2NB60CP ROG | 1.9800 | ![]() | 5 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 3 (168 Stunden) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 2a (TC) | 10V | 4.4ohm @ 1a, 10V | 4,5 V @ 250 ähm | 9.4 NC @ 10 V. | ± 30 v | 249 PF @ 25 V. | - - - | 44W (TC) | ||||||||||||
TSM1NB60SCT B0G | - - - | ![]() | 6913 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MOSFET (Metalloxid) | To-92 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 500 Ma (TC) | 10V | 10ohm @ 250 mA, 10V | 4,5 V @ 250 ähm | 6.1 NC @ 10 V | ± 30 v | 138 PF @ 25 V. | - - - | 2,5 W (TC) | |||||||||||||
![]() | BC846BW | 0,0361 | ![]() | 5103 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | BC846 | 200 MW | SOT-323 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-BC846BWTR | Ear99 | 8541.21.0075 | 18.000 | 65 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 100 MHz | |||||||||||||||
![]() | TSM6968SDCA | 0,6916 | ![]() | 8072 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | TSM6968 | MOSFET (Metalloxid) | 1.04W (TA) | 8-tssop | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM6968SDCATR | Ear99 | 8541.29.0095 | 12.000 | 2 N-Kanal | 20V | 6,5a (ta) | 22mohm @ 6,5a, 4,5 V. | 1V @ 250 ähm | 20nc @ 4,5 V | 950pf @ 10v | Standard | |||||||||||||
![]() | TSM60NB190CI C0G | 8.1000 | ![]() | 749 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack, Isolierte RegisterKarte | TSM60 | MOSFET (Metalloxid) | ITO-220AB | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 18a (TC) | 10V | 190mohm @ 6a, 10V | 4v @ 250 ähm | 31 NC @ 10 V | ± 30 v | 1273 PF @ 100 V | - - - | 33.8W (TC) | |||||||||||
![]() | TQM025NH04LCR-V RLG | 3.0535 | ![]() | 7698 | 0.00000000 | Taiwan Semiconductor Corporation | Automobil, AEC-Q101, Perfet ™ | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung, Benetzbare Flanke | 8-Powertdfn | MOSFET (Metalloxid) | 8-PDFNU (4,9x5,75) | - - - | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 26a (TA), 100A (TC) | 4,5 V, 10 V. | 2,5 MOHM @ 50A, 10V | 2,2 V @ 250 ähm | 95 NC @ 10 V | ± 16 v | 6228 PF @ 25 V. | - - - | 136W (TC) | ||||||||||||||
![]() | TSM060NB06CZ | 2.0942 | ![]() | 9982 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | TSM060 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM060NB06CZ | Ear99 | 8541.29.0095 | 4.000 | N-Kanal | 60 v | 13a (ta), 111a (TC) | 7v, 10V | 6mohm @ 13a, 10V | 4v @ 250 ähm | 103 NC @ 10 V | ± 20 V | 6842 PF @ 30 V | - - - | 2W (TA), 156W (TC) | |||||||||||
![]() | TSM100N06CZ C0G | 1.5800 | ![]() | 49 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Nicht für Designs | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | TSM100 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 100a (TC) | 10V | 6.7mohm @ 30a, 10V | 4v @ 250 ähm | 92 NC @ 10 V | ± 20 V | 4382 PF @ 30 V | - - - | 167W (TC) | |||||||||||
TSM025NB04CR RLG | 3.5500 | ![]() | 752 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Band & Rollen (TR) | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powerldfn | TSM025 | MOSFET (Metalloxid) | 8-PDFN (5,2x5,75) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 24A (TA), 161a (TC) | 10V | 2,5 MOHM @ 24a, 10 V | 4v @ 250 ähm | 113 NC @ 10 V | ± 20 V | 7150 PF @ 20 V | - - - | 3.1W (TA), 136W (TC) | ||||||||||||
![]() | BC547C B1 | - - - | ![]() | 6204 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92 | Herunterladen | UnberÜHrt Ereichen | 1801-BC547CB1 | Veraltet | 1 | 45 V | 100 ma | 15NA (ICBO) | Npn | - - - | 420 @ 2MA, 5V | - - - | ||||||||||||||||||
![]() | TSM340N06CH | 0,7953 | ![]() | 8065 | 0.00000000 | Taiwan Semiconductor Corporation | - - - | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-251-3 Stub Leads, ipak | TSM340 | MOSFET (Metalloxid) | To-251s (I-Pak SL) | Herunterladen | ROHS3 -KONFORM | UnberÜHrt Ereichen | 1801-TSM340N06CH | Ear99 | 8541.29.0095 | 15.000 | N-Kanal | 60 v | 30a (TC) | 4,5 V, 10 V. | 34mohm @ 15a, 10V | 2,5 V @ 250 ähm | 16.6 NC @ 10 V. | ± 20 V | 1180 PF @ 30 V | - - - | 40W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus