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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Cutoff (max) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang
TSM018NB03CR Taiwan Semiconductor Corporation TSM018NB03CR 1.8542
RFQ
ECAD 9217 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung 8-Powertdfn TSM018 MOSFET (Metalloxid) 8-PDFN (5x6) Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM018NB03CRTR Ear99 8541.29.0095 5.000 N-Kanal 30 v 29a (TA), 194a (TC) 4,5 V, 10 V. 1,8 MOHM @ 29A, 10V 2,5 V @ 250 ähm 120 nc @ 10 v ± 20 V 7252 PF @ 15 V - - - 3.1W (TA), 136W (TC)
TSM10ND60CI Taiwan Semiconductor Corporation TSM10ND60CI 2.2540
RFQ
ECAD 7664 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte TSM10 MOSFET (Metalloxid) Ito-220 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM10ND60CI Ear99 8541.29.0095 4.000 N-Kanal 600 V 10a (TC) 10V 600mohm @ 3a, 10V 3,8 V @ 250 ähm 38 nc @ 10 v ± 30 v 1928 PF @ 50 V. - - - 56,8W (TC)
TSM10NC60CF Taiwan Semiconductor Corporation TSM10NC60CF 1.6128
RFQ
ECAD 3171 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack TSM10 MOSFET (Metalloxid) Ito-220s Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM10NC60CF Ear99 8541.29.0095 4.000 N-Kanal 600 V 10a (TC) 10V 750 MOHM @ 2,5A, 10V 4,5 V @ 250 ähm 33 NC @ 10 V. ± 30 v 1652 PF @ 50 V - - - 45W (TC)
TSM6866SDCA Taiwan Semiconductor Corporation TSM6866SDCA 0,7448
RFQ
ECAD 7221 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSSOP (0,173 ", 4,40 mm Breit) TSM6866 MOSFET (Metalloxid) 1.6W (TC) 8-tssop Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM6866SDCATR Ear99 8541.29.0095 12.000 2 N-Kanal 20V 6a (ta) 30mohm @ 6a, 4,5 V. 0,6 V @ 250 ähm 7nc @ 4,5V 565PF @ 8v Standard
TSM1NB60CW Taiwan Semiconductor Corporation TSM1NB60CW 0,6145
RFQ
ECAD 1762 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-261-4, to-261aa TSM1 MOSFET (Metalloxid) SOT-223 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM1NB60CWTR Ear99 8541.29.0095 5.000 N-Kanal 600 V 1a (TC) 10V 10ohm @ 500 mA, 10V 4,5 V @ 250 ähm 6.1 NC @ 10 V ± 30 v 138 PF @ 25 V. - - - 2.1W (TC)
TSM60NB099CZ Taiwan Semiconductor Corporation TSM60NB099CZ 7.8920
RFQ
ECAD 8258 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 TSM60 MOSFET (Metalloxid) To-220 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM60NB099CZ Ear99 8541.29.0095 4.000 N-Kanal 600 V 38a (TC) 10V 99mohm @ 11.3a, 10V 4v @ 250 ähm 62 NC @ 10 V ± 30 v 2587 PF @ 100 V - - - 298W (TC)
TSM680P06DPQ56 Taiwan Semiconductor Corporation TSM680P06DPQ56 1.0636
RFQ
ECAD 4462 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn TSM680 MOSFET (Metalloxid) 3,5 W (TC) 8-PDFN (5x6) Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM680P06DPQ56TR Ear99 8541.29.0095 5.000 2 P-Kanal 60 v 12a (TC) 68mohm @ 6a, 10V 2,5 V @ 250 ähm 16.4nc @ 10v 870PF @ 30V Standard
TSM090N03ECP Taiwan Semiconductor Corporation TSM090N03ECP 0,7000
RFQ
ECAD 6718 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 TSM090 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM090N03ECPTR Ear99 8541.29.0095 5.000 N-Kanal 30 v 50a (TC) 4,5 V, 10 V. 9mohm @ 16a, 10V 2,5 V @ 250 ähm 7,7 NC @ 4,5 V. ± 20 V 680 PF @ 25 V. - - - 40W (TC)
TSM250N02DCQ Taiwan Semiconductor Corporation TSM250N02DCQ 0,3925
RFQ
ECAD 8097 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 6-VDFN-Exponiertebad TSM250 MOSFET (Metalloxid) 620 MW (TC) 6-TDFN (2x2) Herunterladen ROHS3 -KONFORM 3 (168 Stunden) UnberÜHrt Ereichen 1801-TSM250N02DCQTR Ear99 8541.29.0095 12.000 2 N-Kanal 20V 5.8a (TC) 25mohm @ 4a, 4,5 V. 0,8 V @ 250 ähm 11nc @ 4,5V 775PF @ 10V Standard
TSM150NB04LCV Taiwan Semiconductor Corporation TSM150NB04LCV 0,5871
RFQ
ECAD 9527 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powerwdfn TSM150 MOSFET (Metalloxid) 8-PDFN (3.15x3.1) Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM150NB04LCVTR Ear99 8541.29.0095 10.000 N-Kanal 40 v 8A (TA), 36A (TC) 4,5 V, 10 V. 15mohm @ 8a, 10V 2,5 V @ 250 ähm 19 NC @ 10 V ± 20 V 1013 PF @ 20 V - - - 1,9W (TA), 39W (TC)
TSM150P04LCS Taiwan Semiconductor Corporation TSM150P04LCS 1.1755
RFQ
ECAD 7311 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) TSM150 MOSFET (Metalloxid) 8-Sop Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM150P04LCSTR Ear99 8541.29.0095 5.000 P-Kanal 40 v 9a (ta), 22a (TC) 4,5 V, 10 V. 15mohm @ 9a, 10V 2,5 V @ 250 ähm 48 nc @ 10 v ± 20 V 2783 PF @ 20 V - - - 2,2 W (TA), 12,5 W (TC)
TSM160P02CS Taiwan Semiconductor Corporation TSM160P02Cs 0,6916
RFQ
ECAD 3163 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) TSM160 MOSFET (Metalloxid) 8-Sop Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM160P02CSTR Ear99 8541.29.0095 5.000 P-Kanal 20 v 11a (TC) 1,8 V, 4,5 V. 16mohm @ 6a, 4,5 V. 1V @ 250 ähm 27 NC @ 4,5 V. ± 10 V 2320 PF @ 15 V - - - 2,5 W (TC)
TSM6968DCA Taiwan Semiconductor Corporation TSM6968DCA 0,7714
RFQ
ECAD 7202 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSSOP (0,173 ", 4,40 mm Breit) TSM6968 MOSFET (Metalloxid) 1.04W (TA) 8-tssop Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM6968DCATR Ear99 8541.29.0095 12.000 2 N-Kanal 20V 6,5a (ta) 22mohm @ 6a, 4,5 V. 1V @ 250 ähm 20nc @ 4,5 V 950pf @ 10v Standard
TSM60NC620CH C5G Taiwan Semiconductor Corporation TSM60NC620CH C5G 3.6900
RFQ
ECAD 1910 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa TSM60 MOSFET (Metalloxid) To-251 (ipak) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) 1801-TSM60NC620CHC5G 15.000 N-Kanal 600 V 7a (TC) 10V 620mohm @ 2,4a, 10V 5v @ 1ma 15 NC @ 10 V ± 20 V 501 PF @ 300 V - - - 78W (TC)
TSM60NC980CH C5G Taiwan Semiconductor Corporation TSM60NC980CH C5G 3.0700
RFQ
ECAD 13 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa TSM60 MOSFET (Metalloxid) To-251 (ipak) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) 1801-TSM60NC980CHC5G Ear99 8541.29.0095 15.000 N-Kanal 600 V 4a (TC) 10V 980 MOHM @ 1,5A, 10V 5v @ 1ma 11 NC @ 10 V ± 20 V 330 PF @ 300 V - - - 57W (TC)
TSM4NB65CP ROG Taiwan Semiconductor Corporation TSM4NB65CP ROG 2.1200
RFQ
ECAD 34 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 TSM4NB65 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM 3 (168 Stunden) UnberÜHrt Ereichen Ear99 8541.29.0095 2.500 N-Kanal 650 V 4a (TC) 10V 3.37ohm @ 2a, 10V 4,5 V @ 250 ähm 13.46 NC @ 10 V ± 30 v 549 PF @ 25 V. - - - 70W (TC)
BC847CW Taiwan Semiconductor Corporation BC847CW 0,0357
RFQ
ECAD 7744 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung SC-70, SOT-323 BC847 200 MW SOT-323 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-BC847CWTR Ear99 8541.21.0075 18.000 45 V 100 ma 15NA (ICBO) Npn 600mv @ 5ma, 100 mA 420 @ 2MA, 5V 100 MHz
TSM230N06CZ C0G Taiwan Semiconductor Corporation TSM230N06CZ C0G - - -
RFQ
ECAD 5156 0.00000000 Taiwan Semiconductor Corporation - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen TSM230N06CZC0G Ear99 8541.29.0095 1 N-Kanal 60 v 50a (TC) 4,5 V, 10 V. 23mohm @ 20a, 10V 2,5 V @ 250 ähm 28 NC @ 10 V ± 20 V 1680 PF @ 25 V. - - - 104W (TC)
BC549B A1 Taiwan Semiconductor Corporation BC549B A1 - - -
RFQ
ECAD 7605 0.00000000 Taiwan Semiconductor Corporation - - - Band & Box (TB) Veraltet -65 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 500 MW To-92 Herunterladen UnberÜHrt Ereichen 1801-BC549BA1TB Veraltet 1 30 v 100 ma 15NA (ICBO) Npn - - - 200 @ 2MA, 5V - - -
TSM2NB60CP ROG Taiwan Semiconductor Corporation TSM2NB60CP ROG 1.9800
RFQ
ECAD 5 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM 3 (168 Stunden) UnberÜHrt Ereichen Ear99 8541.29.0095 2.500 N-Kanal 600 V 2a (TC) 10V 4.4ohm @ 1a, 10V 4,5 V @ 250 ähm 9.4 NC @ 10 V. ± 30 v 249 PF @ 25 V. - - - 44W (TC)
TSM1NB60SCT B0G Taiwan Semiconductor Corporation TSM1NB60SCT B0G - - -
RFQ
ECAD 6913 0.00000000 Taiwan Semiconductor Corporation - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) MOSFET (Metalloxid) To-92 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1.000 N-Kanal 600 V 500 Ma (TC) 10V 10ohm @ 250 mA, 10V 4,5 V @ 250 ähm 6.1 NC @ 10 V ± 30 v 138 PF @ 25 V. - - - 2,5 W (TC)
BC846BW Taiwan Semiconductor Corporation BC846BW 0,0361
RFQ
ECAD 5103 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung SC-70, SOT-323 BC846 200 MW SOT-323 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-BC846BWTR Ear99 8541.21.0075 18.000 65 V 100 ma 15NA (ICBO) Npn 600mv @ 5ma, 100 mA 200 @ 2MA, 5V 100 MHz
TSM6968SDCA Taiwan Semiconductor Corporation TSM6968SDCA 0,6916
RFQ
ECAD 8072 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSSOP (0,173 ", 4,40 mm Breit) TSM6968 MOSFET (Metalloxid) 1.04W (TA) 8-tssop Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM6968SDCATR Ear99 8541.29.0095 12.000 2 N-Kanal 20V 6,5a (ta) 22mohm @ 6,5a, 4,5 V. 1V @ 250 ähm 20nc @ 4,5 V 950pf @ 10v Standard
TSM60NB190CI C0G Taiwan Semiconductor Corporation TSM60NB190CI C0G 8.1000
RFQ
ECAD 749 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack, Isolierte RegisterKarte TSM60 MOSFET (Metalloxid) ITO-220AB Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 50 N-Kanal 600 V 18a (TC) 10V 190mohm @ 6a, 10V 4v @ 250 ähm 31 NC @ 10 V ± 30 v 1273 PF @ 100 V - - - 33.8W (TC)
TQM025NH04LCR-V RLG Taiwan Semiconductor Corporation TQM025NH04LCR-V RLG 3.0535
RFQ
ECAD 7698 0.00000000 Taiwan Semiconductor Corporation Automobil, AEC-Q101, Perfet ™ Band & Rollen (TR) Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung, Benetzbare Flanke 8-Powertdfn MOSFET (Metalloxid) 8-PDFNU (4,9x5,75) - - - 1 (unbegrenzt) Ear99 8541.29.0095 2.500 N-Kanal 40 v 26a (TA), 100A (TC) 4,5 V, 10 V. 2,5 MOHM @ 50A, 10V 2,2 V @ 250 ähm 95 NC @ 10 V ± 16 v 6228 PF @ 25 V. - - - 136W (TC)
TSM060NB06CZ Taiwan Semiconductor Corporation TSM060NB06CZ 2.0942
RFQ
ECAD 9982 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 TSM060 MOSFET (Metalloxid) To-220 Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM060NB06CZ Ear99 8541.29.0095 4.000 N-Kanal 60 v 13a (ta), 111a (TC) 7v, 10V 6mohm @ 13a, 10V 4v @ 250 ähm 103 NC @ 10 V ± 20 V 6842 PF @ 30 V - - - 2W (TA), 156W (TC)
TSM100N06CZ C0G Taiwan Semiconductor Corporation TSM100N06CZ C0G 1.5800
RFQ
ECAD 49 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Nicht für Designs -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 TSM100 MOSFET (Metalloxid) To-220 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 50 N-Kanal 60 v 100a (TC) 10V 6.7mohm @ 30a, 10V 4v @ 250 ähm 92 NC @ 10 V ± 20 V 4382 PF @ 30 V - - - 167W (TC)
TSM025NB04CR RLG Taiwan Semiconductor Corporation TSM025NB04CR RLG 3.5500
RFQ
ECAD 752 0.00000000 Taiwan Semiconductor Corporation - - - Band & Rollen (TR) Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung 8-Powerldfn TSM025 MOSFET (Metalloxid) 8-PDFN (5,2x5,75) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 2.500 N-Kanal 40 v 24A (TA), 161a (TC) 10V 2,5 MOHM @ 24a, 10 V 4v @ 250 ähm 113 NC @ 10 V ± 20 V 7150 PF @ 20 V - - - 3.1W (TA), 136W (TC)
BC547C B1 Taiwan Semiconductor Corporation BC547C B1 - - -
RFQ
ECAD 6204 0.00000000 Taiwan Semiconductor Corporation - - - Schüttgut Veraltet -65 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 500 MW To-92 Herunterladen UnberÜHrt Ereichen 1801-BC547CB1 Veraltet 1 45 V 100 ma 15NA (ICBO) Npn - - - 420 @ 2MA, 5V - - -
TSM340N06CH Taiwan Semiconductor Corporation TSM340N06CH 0,7953
RFQ
ECAD 8065 0.00000000 Taiwan Semiconductor Corporation - - - Rohr Aktiv 150 ° C (TJ) K. Loch To-251-3 Stub Leads, ipak TSM340 MOSFET (Metalloxid) To-251s (I-Pak SL) Herunterladen ROHS3 -KONFORM UnberÜHrt Ereichen 1801-TSM340N06CH Ear99 8541.29.0095 15.000 N-Kanal 60 v 30a (TC) 4,5 V, 10 V. 34mohm @ 15a, 10V 2,5 V @ 250 ähm 16.6 NC @ 10 V. ± 20 V 1180 PF @ 30 V - - - 40W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus