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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | RN2303, lf | 0,1800 | ![]() | 200 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | RN2303 | 100 MW | SC-70 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 250 ua, 5 mA | 70 @ 10ma, 5V | 200 MHz | 22 Kohms | 22 Kohms | ||||||||||||||||||
![]() | 2SK880-y (TE85L, F) | 0,5600 | ![]() | 42 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | 125 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | 2SK880 | 100 MW | USM | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 13pf @ 10v | 50 v | 1,2 mA @ 10 v | 1,5 V @ 100 na | |||||||||||||||||||||
![]() | RN1710JE (TE85L, F) | 0,4000 | ![]() | 3 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SOT-553 | RN1710 | 100 MW | ESV | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 4.000 | 50V | 100 ma | 100NA (ICBO) | 2 NPN - Voreingensmen (Dual) (Emitter Gekoppelt) | 300 mV @ 250 ua, 5 mA | 120 @ 1ma, 5V | 250 MHz | 4.7kohm | - - - | |||||||||||||||||||
TK62Z60X, S1F | 17.4600 | ![]() | 25 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | 150 ° C. | K. Loch | To-247-4 | TK62Z60 | MOSFET (Metalloxid) | To-247-4l (t) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 25 | N-Kanal | 600 V | 61,8a (TA) | 10V | 40mohm @ 21a, 10V | 3,5 V @ 3,1 mA | 135 NC @ 10 V | ± 30 v | 6500 PF @ 300 V | - - - | 400W (TC) | ||||||||||||||||
![]() | TPCA8012-H (TE12LQM | - - - | ![]() | 9067 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | TPCA8012 | MOSFET (Metalloxid) | 8-fuß-äharsch (5x5) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 40a (ta) | 4,5 V, 10 V. | 4,9 MOHM @ 20A, 10V | 2,5 V @ 1ma | 42 NC @ 10 V. | ± 20 V | 3713 PF @ 10 V | - - - | - - - | ||||||||||||||||
![]() | TK4A50D (STA4, Q, M) | 0,9300 | ![]() | 50 | 0.00000000 | Toshiba Semiconductor und Lagerung | π-mosvii | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | TK4A50 | MOSFET (Metalloxid) | To-220sis | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 500 V | 4a (ta) | 10V | 2OHM @ 2a, 10V | 4,4 V @ 1ma | 9 NC @ 10 V. | ± 30 v | 380 PF @ 25 V. | - - - | 30W (TC) | |||||||||||||||
![]() | TPCL4201 (TE85L, F) | - - - | ![]() | 1167 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 4-Xflga | TPCL4201 | MOSFET (Metalloxid) | 500 MW | 4-chip-lga (1,59 x 1,59) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 4.000 | 2 N-Kanal (Halbe Brücke) | - - - | - - - | - - - | 1,2 V @ 200 ähm | - - - | 720PF @ 10V | - - - | ||||||||||||||||||
![]() | Tta1713-y, lf | 0,3100 | ![]() | 12 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | TTA1713 | 200 MW | S-mini | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | 45 V | 500 mA | 100NA (ICBO) | PNP | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | 80MHz | |||||||||||||||||||
![]() | TK1K7A60F, S4X | 0,9000 | ![]() | 1 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | 150 ° C. | K. Loch | To-220-3 Full Pack | TK1K7A60 | MOSFET (Metalloxid) | To-220sis | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 4a (ta) | 10V | 1,7ohm @ 2a, 10V | 4v @ 460 µA | 16 NC @ 10 V | ± 30 v | 560 PF @ 300 V | - - - | 35W (TC) | |||||||||||||||
![]() | RN2709JE (TE85L, F) | 0,4700 | ![]() | 4 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SOT-553 | RN2709 | 100 MW | ESV | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 4.000 | 50V | 100 ma | 100NA (ICBO) | 2 PNP - Voreeinnensmen (Dual) (Emitter Gekoppelt) | 300 mV @ 250 ua, 5 mA | 70 @ 10ma, 5V | 200 MHz | 47kohm | 22kohm | ||||||||||||||||||
![]() | Tdta114e, lm | 0,1800 | ![]() | 3 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | Tdta114 | 320 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 10 Kohms | |||||||||||||||||||
![]() | SSM3K48FU, LF | 0,3700 | ![]() | 22 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosiii | Band & Rollen (TR) | Aktiv | 150 ° C. | Oberflächenhalterung | SC-70, SOT-323 | SSM3K48 | MOSFET (Metalloxid) | USM | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 30 v | 100 mA (ta) | 2,5 V, 4 V. | 3,2OHM @ 10ma, 4V | 1,5 V @ 100 µA | ± 20 V | 15.1 PF @ 3 V. | - - - | 150 MW (TA) | ||||||||||||||||
![]() | RN2101MFV, L3XHF (CT | 0,3400 | ![]() | 8 | 0.00000000 | Toshiba Semiconductor und Lagerung | Automobil, AEC-Q101 | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SOT-723 | RN2101 | 150 MW | VESM | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 8.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 500 µA, 5 mA | 30 @ 10ma, 5v | 250 MHz | 4.7 Kohms | 4.7 Kohms | |||||||||||||||||||
![]() | TPCA8008-H (TE12LQM | - - - | ![]() | 6237 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | TPCA8008 | MOSFET (Metalloxid) | 8-fuß-äharsch (5x5) | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 250 V | 4a (ta) | 10V | 580MOHM @ 2a, 10V | 4v @ 1ma | 10 nc @ 10 v | ± 20 V | 600 PF @ 10 V. | - - - | 1,6W (TA), 45W (TC) | ||||||||||||||||
![]() | TPC8048-H (TE12L, Q) | - - - | ![]() | 7690 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosvi-h | Klebeband (CT) Schneiden | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,173 ", 4,40 mm Breit) | TPC8048 | MOSFET (Metalloxid) | 5,5x6.0) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 60 v | 16a (ta) | 4,5 V, 10 V. | 6,9 MOHM @ 8A, 10V | 2,3 V @ 1ma | 87 NC @ 10 V | ± 20 V | 7540 PF @ 10 V | - - - | 1W (TA) | |||||||||||||||
![]() | TTC014, L1NV | 0,9900 | ![]() | 8196 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1 w | Pw-mold | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | 800 V | 1 a | 100NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 100 @ 100 Ma, 5V | - - - | |||||||||||||||||||||
![]() | SSM3J09FU, LF | 0,4100 | ![]() | 9 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | 150 ° C. | Oberflächenhalterung | SC-70, SOT-323 | SSM3J09 | MOSFET (Metalloxid) | USM | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 30 v | 200 Ma (TA) | 3,3 V, 10 V. | 2,7OHM @ 100 mA, 10V | 1,8 V @ 100 µA | ± 20 V | 22 PF @ 5 V | - - - | 150 MW (TA) | ||||||||||||||||
![]() | RN1310, lf | 0,1800 | ![]() | 2 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | RN1310 | 100 MW | SC-70 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 250 ua, 5 mA | 120 @ 1ma, 5V | 250 MHz | 4.7 Kohms | ||||||||||||||||||||
![]() | TK72E12N1, S1X | 2.5300 | ![]() | 42 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosviii-h | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | TK72E12 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 120 v | 72a (ta) | 10V | 4,4mohm @ 36a, 10V | 4v @ 1ma | 130 nc @ 10 v | ± 20 V | 8100 PF @ 60 V | - - - | 255W (TC) | |||||||||||||||
![]() | TPC8126, LQ (CM | - - - | ![]() | 6338 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosvi | Band & Rollen (TR) | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,173 ", 4,40 mm Breit) | TPC8126 | MOSFET (Metalloxid) | 5,5x6.0) | Herunterladen | ROHS -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 10MOHM @ 5.5A, 10V | 2v @ 500 ähm | 56 NC @ 10 V | +20V, -25 V. | 2400 PF @ 10 V. | - - - | 1W (TA) | |||||||||||||||
![]() | TK31V60W, LVQ | 7.8500 | ![]() | 3694 | 0.00000000 | Toshiba Semiconductor und Lagerung | Dtmosiv | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | 4-VSFN-Exponiertebad | TK31v60 | MOSFET (Metalloxid) | 4-DFN-EP (8x8) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 30,8a (TA) | 10V | 98mohm @ 15.4a, 10V | 3,7 V @ 1,5 mA | 86 NC @ 10 V | ± 30 v | 3000 PF @ 300 V | - - - | 240W (TC) | |||||||||||||||
![]() | TK14A45DA (STA4, QM) | 2.7100 | ![]() | 3625 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Rohr | Aktiv | - - - | K. Loch | To-220-3 Full Pack | TK14A45 | MOSFET (Metalloxid) | To-220sis | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 450 V | 13,5a | 410mohm @ 6.8a, 10V | - - - | - - - | - - - | |||||||||||||||||||
![]() | 2SJ438, MDKQ (j | - - - | ![]() | 1464 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Schüttgut | Veraltet | K. Loch | To-220-3 Full Pack | 2SJ438 | To-220nis | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 1 | 5a (TJ) | ||||||||||||||||||||||||||||
![]() | TK9A55DA (STA4, Q, M) | 2.0200 | ![]() | 9871 | 0.00000000 | Toshiba Semiconductor und Lagerung | π-mosvii | Rohr | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | TK9A55 | MOSFET (Metalloxid) | To-220sis | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 50 | N-Kanal | 550 V | 8.5a (TA) | 10V | 860MOHM @ 4,3a, 10V | 4v @ 1ma | 20 nc @ 10 v | ± 30 v | 1050 PF @ 25 V. | - - - | 40W (TC) | |||||||||||||||
![]() | 2SC5886A (T6L1, NQ) | 0,7000 | ![]() | 8546 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1 w | Pw-mold | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | 50 v | 5 a | 100NA (ICBO) | Npn | 220 MV @ 32 Ma, 1,6a | 400 @ 500 mA, 2V | - - - | ||||||||||||||||||||
![]() | RN4990 (TE85L, F) | 0,3400 | ![]() | 2 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | RN4990 | 200 MW | US6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50V | 100 ma | 100NA (ICBO) | 1 NPN, 1 PNP - Voreingenben (Dual) | 300 mV @ 250 ua, 5 mA | 120 @ 1ma, 5V | 250 MHz, 200 MHz | 4.7kohm | - - - | |||||||||||||||||||
![]() | RN2907, LXHF (CT | 0,4400 | ![]() | 6 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | RN2907 | 200 MW | US6 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50V | 100 ma | 500NA | 2 PNP - Voreeinnensmen (Dual) | 300 mV @ 250 ua, 5 mA | 80 @ 10ma, 5V | 200 MHz | 10kohm | 47kohm | |||||||||||||||||||
![]() | SSM3J352F, LF | 0,4900 | ![]() | 2 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosvi | Band & Rollen (TR) | Aktiv | 150 ° C. | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | SSM3J352 | MOSFET (Metalloxid) | S-mini | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 2a (ta) | 1,8 V, 10 V. | 110Mohm @ 2a, 10V | 1,2 V @ 1ma | 5.1 NC @ 4.5 V. | ± 12 V | 210 PF @ 10 V | - - - | 1.2W (TA) | |||||||||||||||
![]() | RN2307, lf | 0,1800 | ![]() | 3 | 0.00000000 | Toshiba Semiconductor und Lagerung | - - - | Band & Rollen (TR) | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | RN2307 | 100 MW | SC-70 | Herunterladen | 1 (unbegrenzt) | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 500NA | PNP - VoreInensmen | 300 mV @ 250 ua, 5 mA | 80 @ 10ma, 5V | 200 MHz | 10 Kohms | 47 Kohms | |||||||||||||||||||
![]() | TK15S04N1L, LQ | 1.6400 | ![]() | 4104 | 0.00000000 | Toshiba Semiconductor und Lagerung | U-mosviii-h | Band & Rollen (TR) | Aktiv | 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | TK15S04 | MOSFET (Metalloxid) | Dpak+ | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 40 v | 15a (ta) | 4,5 V, 10 V. | 17,8 MOHM @ 7,5A, 10V | 2,5 V @ 100 µA | 10 nc @ 10 v | ± 20 V | 610 PF @ 10 V | - - - | 46W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
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