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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) |
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![]() | Irf730b | 0,3200 | ![]() | 471 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 400 V | 5.5a (TC) | 10V | 1OHM @ 2,75a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1000 PF @ 25 V. | - - - | 73W (TC) | ||||||||||||
![]() | FMBS549 | 0,0400 | ![]() | 6326 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 5 | 30 v | 1 a | 100NA (ICBO) | PNP | 750 MV @ 200ma, 2a | 100 @ 500 mA, 2V | 100 MHz | ||||||||||||||||||
![]() | FCD900N60Z | 0,7800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8541.29.0095 | 385 | N-Kanal | 600 V | 4,5a (TC) | 10V | 900mohm @ 2,3a, 10 V | 3,5 V @ 250 ähm | 17 NC @ 10 V | ± 20 V | 720 PF @ 25 V. | - - - | 52W (TC) | |||||||||||||||
![]() | FDB3672-F085 | 1.0000 | ![]() | 9590 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 7.2a (TA), 44a (TC) | 6 V, 10V | 28mohm @ 44a, 10V | 4v @ 250 ähm | 31 NC @ 10 V | ± 20 V | 1710 PF @ 25 V | - - - | 120W (TC) | |||||||||||||||
![]() | SFU9024TU | - - - | ![]() | 7397 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 7.8a (TC) | 10V | 280 MOHM @ 3,9a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 600 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | ||||||||||||
![]() | HUFA76407P3 | 0,3300 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 13a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||
![]() | FDS6064N7 | 0,8100 | ![]() | 6598 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 310 | N-Kanal | 20 v | 23a (ta) | 1,8 V, 4,5 V. | 3,5 MOHM @ 23A, 4,5 V. | 1,5 V @ 250 ähm | 98 NC @ 4,5 V. | ± 8 v | 7191 PF @ 10 V | - - - | 3W (TA) | ||||||||||||||
![]() | 2N3906ta | 1.0000 | ![]() | 3314 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz | |||||||||||||||||||
![]() | FJAF6810ATU | - - - | ![]() | 4768 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | 60 w | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 750 V | 10 a | 1ma | Npn | 3v @ 1,5a, 6a | 5 @ 6a, 5V | - - - | ||||||||||||||||||
![]() | FQL40N50F | - - - | ![]() | 2298 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | MOSFET (Metalloxid) | HPM F2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 40a (TC) | 10V | 110MOHM @ 20A, 10V | 5 V @ 250 ähm | 200 nc @ 10 v | ± 30 v | 7500 PF @ 25 V. | - - - | 460W (TC) | |||||||||||||||
![]() | KSP13TA | 1.0000 | ![]() | 9872 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 30 v | 500 mA | 100NA (ICBO) | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 10000 @ 100 mA, 5V | 125 MHz | ||||||||||||||||||||
![]() | IRL620A | 0,3300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 5a (TC) | 5v | 800 MOHM @ 2,5A, 5V | 2v @ 250 ähm | 15 NC @ 5 V | ± 20 V | 430 PF @ 25 V. | - - - | 39W (TC) | ||||||||||||
![]() | Fjn5471ta | 0,0200 | ![]() | 1678 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 327 | 20 v | 5 a | 100NA (ICBO) | Npn | 500mv @ 100 mA, 3a | 700 @ 500 mA, 2 V | 150 MHz | ||||||||||||||||||
![]() | KSA916YTA | 0,0900 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 900 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 3.845 | 120 v | 800 mA | 100NA (ICBO) | PNP | 1v @ 50 mA, 500 mA | 100 @ 100 Ma, 5V | 120 MHz | |||||||||||||||||||
![]() | BC849CMTF | 0,0200 | ![]() | 130 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | ||||||||||||||||||
![]() | BC32716ta | 0,0300 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||
![]() | BC548ATA | 0,0200 | ![]() | 4991 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2,432 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | ||||||||||||||||||
![]() | KSB772OS | 0,1000 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 250 | 30 v | 3 a | 1 µA (ICBO) | PNP | 500mv @ 200 Ma, 2a | 100 @ 1a, 2v | 80MHz | ||||||||||||||||||
![]() | BC857S | - - - | ![]() | 2842 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-TSSOP, SC-88, SOT-363 | BC857 | 300 MW | SC-88 (SC-70-6) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 200 ma | 15NA (ICBO) | 2 PNP (Dual) | 650 mv @ 5ma, 100 mA | 125 @ 2MA, 5V | 200 MHz | |||||||||||||||
FDZ2553NZ | 0,6000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 18-WFBGA | FDZ25 | MOSFET (Metalloxid) | 2.1W | 18-bga (2,5 x 4) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | 2 n-kanal (dual) | 20V | 9.6a | 14mohm @ 9,6a, 4,5 V. | 1,5 V @ 250 ähm | 18nc @ 5v | 1240pf @ 10v | Logikpegel -tor | ||||||||||||||||
![]() | KSC838YBU | 0,0300 | ![]() | 1327 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 9.744 | 30 v | 30 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 120 @ 2MA, 12V | 250 MHz | ||||||||||||||||||
![]() | HUF75542S3S | 1.5900 | ![]() | 400 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 80 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 180 NC @ 20 V. | ± 20 V | 2750 PF @ 25 V. | - - - | 230W (TC) | ||||||||||||
![]() | BC557ata | 0,0400 | ![]() | 145 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7,322 | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||
![]() | KSA614O | 1.0000 | ![]() | 8695 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 25 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 200 | 55 v | 3 a | 50 µA (ICBO) | PNP | 500mv @ 100 mA, 1a | 70 @ 500 mA, 5V | - - - | ||||||||||||||||||
![]() | BC548CTA | 0,0400 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 8,266 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||
![]() | FDP12N50NZ | - - - | ![]() | 9483 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 11,5a (TC) | 10V | 520MOHM @ 5.75A, 10V | 5 V @ 250 ähm | 30 NC @ 10 V | ± 25 V | 1235 PF @ 25 V. | - - - | 170W (TC) | |||||||||||||||
![]() | FDS7066ASN3 | 1.1900 | ![]() | 623 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 19a (ta) | 4,5 V, 10 V. | 4,8 MOHM @ 19A, 10V | 3V @ 1ma | 62 NC @ 10 V | ± 20 V | 2460 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||
![]() | FJN3310RBU | 1.0000 | ![]() | 2532 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | Fjn331 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 40 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 1ma, 10 mA | 100 @ 1ma, 5V | 250 MHz | 10 Kohms | |||||||||||||||||
![]() | BSR13 | 1.0000 | ![]() | 5723 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 30NA (ICBO) | Npn | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 250 MHz | ||||||||||||||||||
![]() | BC307CBU | 0,0200 | ![]() | 1289 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 629 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 380 @ 2MA, 5V | 130 MHz |
Täglich durchschnittliches RFQ -Volumen
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