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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | FDZ193p | 0,2200 | ![]() | 779 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-UFBGA, WLCSP | MOSFET (Metalloxid) | 6-WLCSP (1x1.5) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 3a (ta) | 1,7 V, 4,5 V. | 90 MOHM @ 1A, 4,5 V. | 1,5 V @ 250 ähm | 10 nc @ 10 v | ± 12 V | 660 PF @ 10 V. | - - - | 1,9W (TA) | |||||||||||||||||||
![]() | FJA4313Rtu | 1.0000 | ![]() | 2549 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 130 w | To-3pn | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 250 V | 17 a | 5 µA (ICBO) | Npn | 3v @ 800 mA, 8a | 55 @ 1a, 5v | 30 MHz | ||||||||||||||||||||
![]() | IRL540A | 0,7000 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 100 v | 28a (TC) | 5v | 58mohm @ 14a, 5V | 2v @ 250 ähm | 54 NC @ 5 V. | ± 20 V | 1580 PF @ 25 V. | - - - | 121W (TC) | ||||||||||||||||||
![]() | TN2907A | 0,2700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.500 | 60 v | 800 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | - - - | ||||||||||||||||||||||
![]() | FQL40N50F | - - - | ![]() | 2298 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | MOSFET (Metalloxid) | HPM F2 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 40a (TC) | 10V | 110MOHM @ 20A, 10V | 5 V @ 250 ähm | 200 nc @ 10 v | ± 30 v | 7500 PF @ 25 V. | - - - | 460W (TC) | |||||||||||||||||||
![]() | FDR836p | 0,9000 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-lsop (0,130 ", 3,30 mm Breit) | MOSFET (Metalloxid) | Supersot ™ -8 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 6.1a (ta) | 2,5 V, 4,5 V. | 30mohm @ 6.1a, 4,5 V. | 1V @ 250 ähm | 44 NC @ 4,5 V. | ± 8 v | 2200 PF @ 25 V. | - - - | 900 MW (TA) | ||||||||||||||||
![]() | TIP31C | 0,3700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 | 40 w | To-220 | - - - | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-tip31c-600039 | 873 | 100 v | 3 a | 200 µA | Npn | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | ||||||||||||||||||||||
![]() | Hufa76443p3_nl | - - - | ![]() | 9179 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 237 | N-Kanal | 60 v | 75a (TC) | 4,5 V, 10 V. | 8mohm @ 75a, 10V | 3v @ 250 ähm | 129 NC @ 10 V | ± 16 v | 4115 PF @ 25 V. | - - - | 260W (TC) | ||||||||||||||||
![]() | 2N3702 | 0,0700 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 25 v | 500 mA | 100NA (ICBO) | PNP | 250mv @ 5 mA, 50 mA | 60 @ 50 Ma, 5V | 100 MHz | ||||||||||||||||||||||
![]() | 2n5210tf | 0,0200 | ![]() | 57 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 50 v | 100 ma | 50na (ICBO) | Npn | 700 mv @ 1ma, 10 mA | 200 @ 100 µA, 5V | 30 MHz | ||||||||||||||||||||||
![]() | KSH210TM | 0,3600 | ![]() | 95 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH21 | 1,4 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.500 | 25 v | 5 a | 100NA (ICBO) | PNP | 1,8 V @ 1a, 5a | 45 @ 2a, 1V | 65 MHz | |||||||||||||||||||
![]() | 2n5210bu | - - - | ![]() | 6560 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 2N5210 | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 50 v | 100 ma | 50na | Npn | 700 mv @ 1ma, 10 mA | 200 @ 100 µA, 5V | 30 MHz | |||||||||||||||||||
![]() | MPSW56RLRPG | 1.0000 | ![]() | 8987 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 1 w | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 2.000 | 80 v | 500 mA | 500NA | PNP | 500mv @ 10 mA, 250 mA | 50 @ 250 mA, 1V | 50 MHz | ||||||||||||||||||||||
![]() | NZT6727 | 1.0000 | ![]() | 2702 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-3 | 1 w | SOT-223-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 40 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 50 @ 1a, 1V | - - - | ||||||||||||||||||||||
![]() | KSC2682YS | 0,1000 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,2 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 250 | 180 v | 100 ma | 1 µA (ICBO) | Npn | 500mv @ 5ma, 50 mA | 160 @ 10ma, 5V | 200 MHz | ||||||||||||||||||||||
![]() | KSA992fta | 0,0500 | ![]() | 6133 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 2.000 | 120 v | 50 ma | 1 µA | PNP | 300 mV @ 1ma, 10 mA | 300 @ 1ma, 6v | 100 MHz | |||||||||||||||||||||||
![]() | 2N4124TF | 0,0200 | ![]() | 9714 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.318 | 25 v | 200 ma | 50na (ICBO) | Npn | 300mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 300 MHz | ||||||||||||||||||||||
![]() | Fjy3003r | 0,0200 | ![]() | 24 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy300 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 56 @ 5ma, 5V | 250 MHz | 22 Kohms | 22 Kohms | ||||||||||||||||||||
![]() | KSH210TF | 0,2800 | ![]() | 513 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,4 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 25 v | 5 a | 100NA (ICBO) | PNP | 1,8 V @ 1a, 5a | 70 @ 500 mA, 1V | 65 MHz | ||||||||||||||||||||
![]() | KSC1393OTA | 1.0000 | ![]() | 1984 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 20 dB ~ 24 dB | 30V | 20 ma | Npn | 60 @ 2ma, 10V | 700 MHz | 2db ~ 3db @ 200 MHz | ||||||||||||||||||||||
![]() | TN3440A | 0,0700 | ![]() | 1238 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 833 | 250 V | 100 ma | 50 µA | Npn | 500mv @ 4ma, 50 mA | 40 @ 20 mA, 10V | 15 MHz | ||||||||||||||||||||||
![]() | KSA928AOTA | - - - | ![]() | 7632 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | KSA928 | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 30 v | 2 a | 100NA (ICBO) | PNP | 2v @ 30 mA, 1,5a | 100 @ 500 mA, 2V | 120 MHz | |||||||||||||||||||
![]() | FDS3601 | 0,3700 | ![]() | 49 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS36 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 100V | 1.3a | 480MOHM @ 1,3a, 10V | 4v @ 250 ähm | 5nc @ 10v | 153pf @ 50V | Logikpegel -tor | |||||||||||||||||||
![]() | FJZ733OTF | 0,6700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SOT-623F | 100 MW | SOT-623F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 70 @ 1ma, 6v | 180 MHz | ||||||||||||||||||||||
![]() | SS9014BBU | - - - | ![]() | 2021 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 50na (ICBO) | Npn | 300 mV @ 5ma, 100 mA | 100 @ 1ma, 5V | 270 MHz | ||||||||||||||||||||||
![]() | Fjy4008r | 0,0200 | ![]() | 8624 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy400 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 47 Kohms | 22 Kohms | ||||||||||||||||||||
![]() | FDMC6683PZ | - - - | ![]() | 3427 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | FDMC66 | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | P-Kanal | 20 v | 40a (TC) | 2,5 V, 4,5 V. | 1,5 V @ 250 ähm | 74 NC @ 10 V | ± 12 V | 7995 PF @ 10 V | - - - | 26W (TC) | |||||||||||||||||
![]() | ISL9N303AS3 | 2.7100 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 3,2 MOHM @ 75A, 10V | 3v @ 250 ähm | 172 NC @ 10 V | ± 20 V | 7000 PF @ 15 V | - - - | 215W (TC) | ||||||||||||||||||
![]() | ISL9N2357D3ST | 1.0200 | ![]() | 87 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 35a (TC) | 10V | 7mohm @ 35a, 10V | 4v @ 250 ähm | 258 NC @ 20 V | ± 20 V | 5600 PF @ 25 V. | - - - | 100 W (TC) | ||||||||||||||||
![]() | BCW60D | 1.0000 | ![]() | 7088 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 32 v | 100 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 380 @ 2MA, 5V | 125 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus