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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Ausfluss - rds (on) | Strom Abfluss (ID) - Maximal |
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![]() | FQPF9N25CT | 0,5700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 250 V | 8.8a (TC) | 10V | 430mohm @ 4.4a, 10V | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 710 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||
![]() | FDS6680s | 0,5200 | ![]() | 42 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 11,5a (ta) | 4,5 V, 10 V. | 11mohm @ 11.5a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 20 V | 2010 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||
![]() | FJZ594JBTF | 0,0200 | ![]() | 687 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SOT-623F | 100 MW | SOT-623F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 3.5PF @ 5v | 20 v | 150 µa @ 5 V | 600 mV @ 1 µA | 1 Ma | ||||||||||||||||||||||||||||||
![]() | FDS4435a | 1.2100 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 9a (ta) | 4,5 V, 10 V. | 17mohm @ 9a, 10V | 2v @ 250 ähm | 30 NC @ 5 V | ± 20 V | 2010 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||
![]() | FDU8878 | 0,3000 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 30 v | 11a (ta), 40a (TC) | 4,5 V, 10 V. | 15mohm @ 35a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 880 PF @ 15 V | - - - | 40W (TC) | |||||||||||||||||||||||||
![]() | Fqi32n20ctu | 0,9800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 28a (TC) | 10V | 82mohm @ 14a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 30 v | 2220 PF @ 25 V. | - - - | 3.13W (TA), 156W (TC) | |||||||||||||||||||||||||
![]() | Fqpf3n80cydtu | 0,6600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 3a (TC) | 10V | 4,8ohm @ 1,5a, 10 V. | 5 V @ 250 ähm | 16,5 NC @ 10 V. | ± 30 v | 705 PF @ 25 V. | - - - | 39W (TC) | |||||||||||||||||||||||||
![]() | FQAF16N25C | 0,9200 | ![]() | 360 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 250 V | 11.4a (TC) | 10V | 270 MOHM @ 5.7A, 10V | 4v @ 250 ähm | 53,5 NC @ 10 V. | ± 30 v | 1080 PF @ 25 V. | - - - | 73W (TC) | |||||||||||||||||||||||||
![]() | FDS9412 | 0,2700 | ![]() | 116 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 7.9a (ta) | 4,5 V, 10 V. | 22mohm @ 7.9a, 10V | 2v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 830 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||
![]() | FMS7G20US60S | 17.3100 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 25 Uhr-aa | 89 w | Einphasenbrückenreichrichter | 25 Uhr-aa | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 20 a | 2,7 V @ 15V, 20a | 250 µA | Ja | 1.277 NF @ 30 V | |||||||||||||||||||||||||||
![]() | Jftj105 | - - - | ![]() | 9816 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1 w | SOT-223-4 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | - - - | 25 v | 500 mA @ 15 V | 4,5 V @ 1 µA | 3 Ohm | ||||||||||||||||||||||||||||||
![]() | FQAF19N20 | 0,8300 | ![]() | 684 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 200 v | 15a (TC) | 10V | 150 MOHM @ 7,5a, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1600 PF @ 25 V. | - - - | 85W (TC) | |||||||||||||||||||||||||
![]() | FQD7N10TM | 0,5100 | ![]() | 176 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 5.8a (TC) | 10V | 350 MOHM @ 2,9a, 10V | 4v @ 250 ähm | 7,5 NC @ 10 V | ± 25 V | 250 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||||||||||||||||||||
![]() | SGP13N60UFTU | 0,2300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SGP13N60 | Standard | 60 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 300 V, 6,5a, 50 Ohm, 15 V. | - - - | 600 V | 13 a | 52 a | 2,6 V @ 15V, 6,5a | 85 µJ (EIN), 95 µJ (AUS) | 25 NC | 20ns/70ns | |||||||||||||||||||||||||
![]() | FDS6812a | 1.0000 | ![]() | 3538 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS68 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 20V | 6.7a | 22mohm @ 6.7a, 4,5 V. | 1,5 V @ 250 ähm | 19NC @ 4,5V | 1082pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | Fms6g10us60 | 15.4500 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 25 Uhr-aa | 66 w | DREIPHASENBRÜCKENGLECHRICHTER | 25 Uhr-aa | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | Drei -Phase -wechselrichter | - - - | 600 V | 10 a | 2,7 V @ 15V, 10a | 250 µA | Ja | 710 PF @ 30 V | |||||||||||||||||||||||||||
![]() | FDY2001PZ | 0,0600 | ![]() | 161 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | FDY20 | MOSFET (Metalloxid) | 446 MW | SOT-563F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 150 Ma | 8OHM @ 150 mA, 4,5 V. | 1,5 V @ 250 ähm | 1,4nc @ 4,5 V | 100pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | IRFS654B | 1.0800 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 250 V | 21a (TJ) | 10V | 140 MOHM @ 10,5a, 10V | 4v @ 250 ähm | 123 NC @ 10 V | ± 30 v | 3400 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||
![]() | SFI9510TU | 0,7300 | ![]() | 950 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 3.6a (TC) | 10V | 1,2OHM @ 1,8a, 10V | 4v @ 250 ähm | 10 nc @ 10 v | ± 30 v | 335 PF @ 25 V. | - - - | 3,8 W (TA), 32W (TC) | |||||||||||||||||||||||
![]() | FDZ197PZ | 0,2300 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-UFBGA, WLCSP | FDZ19 | MOSFET (Metalloxid) | 6-WLCSP (1,0x1,5) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 5.000 | P-Kanal | 20 v | 3.8a (TA) | 1,5 V, 4,5 V. | 64mohm @ 2a, 4,5 V. | 1V @ 250 ähm | 25 NC @ 4,5 V. | ± 8 v | 1570 PF @ 10 V. | - - - | 1,9W (TA) | ||||||||||||||||||||||
![]() | FDMS86152 | 2.6400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 114 | N-Kanal | 100 v | 14A (TA), 45A (TC) | 6 V, 10V | 6mohm @ 14a, 10V | 4v @ 250 ähm | 50 nc @ 10 v | ± 20 V | 3370 PF @ 50 V | - - - | 2,7W (TA), 125W (TC) | ||||||||||||||||||||||||||
![]() | FDB16AN08A0 | 1.3700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 239 | N-Kanal | 75 V | 9A (TA), 58a (TC) | 6 V, 10V | 16mohm @ 58a, 10V | 4v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 1857 PF @ 25 V. | - - - | 135W (TC) | ||||||||||||||||||||||||||
![]() | Fdme910pzt | 1.0000 | ![]() | 3527 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerufdfn | MOSFET (Metalloxid) | Mikrofet 1,6x1.6 Dünn | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 8a (ta) | 1,8 V, 4,5 V. | 24MOHM @ 8a, 4,5 V. | 1,5 V @ 250 ähm | 21 NC @ 4,5 V. | ± 8 v | 2110 PF @ 10 V | - - - | 2.1W (TA) | ||||||||||||||||||||||||||
![]() | FDMA1025p | 0,2900 | ![]() | 92 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA1025 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 3.1a | 155mohm @ 3,1a, 4,5 V. | 1,5 V @ 250 ähm | 4,8nc @ 4,5 V | 450pf @ 10v | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FDD6690S | 0,6300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 40a (ta) | 10V | 16mohm @ 10a, 10V | 3V @ 1ma | 24 nc @ 10 v | ± 20 V | 2010 PF @ 15 V | - - - | 1,3W (TA) | |||||||||||||||||||||||
![]() | FQI13N06LTU | 0,7200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 13,6a (TC) | 5v, 10V | 110MOHM @ 6.8a, 10V | 2,5 V @ 250 ähm | 6.4 NC @ 5 V. | ± 20 V | 350 PF @ 25 V. | - - - | 3,75W (TA), 45W (TC) | |||||||||||||||||||||||||
![]() | BS170 | - - - | ![]() | 9226 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | MOSFET (Metalloxid) | To-92 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 60 v | 300 mA (TA) | 5ohm @ 200 mA, 10V | 3V @ 1ma | 60 PF @ 10 V | - - - | ||||||||||||||||||||||||||||||||
![]() | FQAF40N25 | 2.9800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 250 V | 24a (TC) | 10V | 70 Mohm @ 12a, 10V | 5 V @ 250 ähm | 110 nc @ 10 v | ± 30 v | 4000 PF @ 25 V. | - - - | 108W (TC) | |||||||||||||||||||||||||
![]() | Fqpf9n50t | 0,9600 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 500 V | 5.3a (TC) | 10V | 730MOHM @ 2,65A, 10V | 5 V @ 250 ähm | 36 NC @ 10 V | ± 30 v | 1450 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||||
![]() | FDS7060N7 | 1.6000 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 188 | N-Kanal | 30 v | 19a (ta) | 4,5 V, 10 V. | 5mohm @ 19a, 10V | 3v @ 250 ähm | 56 NC @ 5 V. | ± 20 V | 3274 PF @ 15 V | - - - | 3W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus