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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Spannung - Breakdown (V (BR) GSS) Strom - Drain (IDSS) @ VDS (VGS = 0) Spannung - Cutoff (VGS OFF) @ id Strom - Sammler Cutoff (max) Ausfluss - rds (on) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang Ausflussbasis (R1) Ausfluss - Emitterbasis (R2)
FDY4001CZCT Fairchild Semiconductor FDY4001CZCT - - -
RFQ
ECAD 6907 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv FDY40 - - - - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert 2.101 - - -
FDD850N10LD Fairchild Semiconductor FDD850N10LD - - -
RFQ
ECAD 7269 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-5, dpak (4 Leitete + Tab), to-252ad MOSFET (Metalloxid) To-252-4 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 0000.00.0000 2.500 N-Kanal 100 v 15,3a (TC) 75mohm @ 12a, 10V 2,5 V @ 250 ähm 28.9 NC @ 10 V. ± 20 V 1465 PF @ 25 V. - - - 42W (TC)
HUF76423D3 Fairchild Semiconductor HUF76423D3 0,4100
RFQ
ECAD 6 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.800 N-Kanal 60 v 20A (TC) 4,5 V, 10 V. 32mohm @ 20a, 10V 3v @ 250 ähm 34 NC @ 10 V. ± 16 v 1060 PF @ 25 V. - - - 85W (TC)
FJX4006RTF Fairchild Semiconductor FJX4006RTF 0,0300
RFQ
ECAD 93 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv Oberflächenhalterung SC-70, SOT-323 FJX400 200 MW SC-70 (SOT323) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 0000.00.0000 3.000 50 v 100 ma 100NA (ICBO) PNP - VoreInensmen 300 mV @ 500 µA, 10 mA 68 @ 5ma, 5v 200 MHz 10 Kohms 47 Kohms
FDS3670 Fairchild Semiconductor FDS3670 1.6700
RFQ
ECAD 28 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 100 v 6.3a (ta) 6 V, 10V 32mohm @ 6.3a, 10V 4v @ 250 ähm 80 nc @ 10 v ± 20 V 2490 PF @ 50 V - - - 2,5 W (TA)
KSB564AOBU Fairchild Semiconductor KSB564AOBU - - -
RFQ
ECAD 6910 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 800 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 8.000 25 v 1 a 100NA (ICBO) PNP 500mv @ 100 mA, 1a 70 @ 100 mA, 1V 110 MHz
J175 Fairchild Semiconductor J175 0,1200
RFQ
ECAD 2089 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -65 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 350 MW To-92-3 Herunterladen ROHS3 -KONFORM 2156-J175-FS Ear99 8541.21.0095 2.000 P-Kanal 5.5PF @ 10V (VGS) 30 v 7 ma @ 15 V 3 v @ 10 na 125 Ohm
2N4125BU Fairchild Semiconductor 2N4125BU - - -
RFQ
ECAD 6970 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 - - - ROHS3 -KONFORM Ear99 8541.21.0095 1.000 30 v 200 ma 50na (ICBO) PNP 400mv @ 5ma, 50 mA 50 @ 2MA, 1V - - -
FQD20N06TF Fairchild Semiconductor FQD20N06TF 0,4000
RFQ
ECAD 5421 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 525 N-Kanal 60 v 16,8a (TC) 10V 63mohm @ 8.4a, 10V 4v @ 250 ähm 15 NC @ 10 V ± 25 V 590 PF @ 25 V. - - - 2,5 W (TA), 38W (TC)
FDMD8280 Fairchild Semiconductor FDMD8280 - - -
RFQ
ECAD 1017 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 12-Powerwdfn FDMD82 MOSFET (Metalloxid) 1W 12-Power3.3x5 Herunterladen 0000.00.0000 1 2 n-kanal (dual) 80V 11a 8.2mohm @ 11a, 10V 4v @ 250 ähm 44nc @ 10v 3050pf @ 40V - - -
FQP4N20 Fairchild Semiconductor FQP4N20 0,3100
RFQ
ECAD 10 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 200 v 3.6a (TC) 10V 1,4OHM @ 1,8a, 10V 5 V @ 250 ähm 6,5 NC @ 10 V. ± 30 v 220 PF @ 25 V. - - - 45W (TC)
SSR1N60BTM Fairchild Semiconductor SSR1N60BTM 0,1800
RFQ
ECAD 33 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 600 V 900 Ma (TC) 10V 12ohm @ 450 mA, 10V 4v @ 250 ähm 7,7 NC @ 10 V ± 30 v 215 PF @ 25 V. - - - 2,5 W (TA), 28 W (TC)
MMBTH10 Fairchild Semiconductor MmbTH10 0,0300
RFQ
ECAD 4 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv Herunterladen Verkäfer undefiniert UnberÜHrt Ereichen 2156-MMBTH10-600039 1
IRF644B-FP001 Fairchild Semiconductor IRF644B-FP001 1.8400
RFQ
ECAD 980 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Verkäfer undefiniert UnberÜHrt Ereichen 2156-IRF644B-FP001-600039 Ear99 8541.29.0095 1 N-Kanal 250 V 14a (TC) 10V 280mohm @ 7a, 10V 4v @ 250 ähm 60 nc @ 10 v ± 30 v 1600 PF @ 25 V. - - - 139W (TC)
FQPF5N30 Fairchild Semiconductor Fqpf5n30 0,4200
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 N-Kanal 300 V 3.9a (TC) 10V 900MOHM @ 1.95a, 10V 5 V @ 250 ähm 13 NC @ 10 V ± 30 v 430 PF @ 25 V. - - - 35W (TC)
FDPF041N06BL1 Fairchild Semiconductor FDPF041N06BL1 1.1500
RFQ
ECAD 755 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 283 N-Kanal 60 v 77a (TC) 10V 4.1MOHM @ 77A, 10V 4v @ 250 ähm 69 NC @ 10 V ± 20 V 5690 PF @ 30 V - - - 44.1W (TC)
FDS8874 Fairchild Semiconductor FDS8874 0,5400
RFQ
ECAD 4 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 16a (ta) 4,5 V, 10 V. 5,5 MOHM @ 16A, 10V 2,5 V @ 250 ähm 72 NC @ 10 V ± 20 V 3990 PF @ 15 V - - - 2,5 W (TA)
FQB19N20LTM Fairchild Semiconductor FQB19N20LTM 1.0000
RFQ
ECAD 5433 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen Ear99 8542.39.0001 1 N-Kanal 200 v 21a (TC) 5v, 10V 140 MOHM @ 10,5a, 10V 2v @ 250 ähm 35 NC @ 5 V. ± 20 V 2200 PF @ 25 V. - - - 3.13W (TA), 140W (TC)
SFS9640 Fairchild Semiconductor SFS9640 0,5100
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 P-Kanal 200 v 6.2a (TC) 10V 500mohm @ 3.1a, 10 V. 4v @ 250 ähm 59 NC @ 10 V ± 30 v 1585 PF @ 25 V. - - - 40W (TC)
FQPF11N50CF Fairchild Semiconductor Fqpf11n50cf 1.5600
RFQ
ECAD 985 0.00000000 Fairchild Semiconductor FRFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 193 N-Kanal 500 V 11a (TC) 10V 550MOHM @ 5.5A, 10V 4v @ 250 ähm 55 NC @ 10 V ± 30 v 2055 PF @ 25 V. - - - 48W (TC)
SS9014BBU Fairchild Semiconductor SS9014BBU - - -
RFQ
ECAD 2021 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 450 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.000 45 V 100 ma 50na (ICBO) Npn 300 mV @ 5ma, 100 mA 100 @ 1ma, 5V 270 MHz
KSE2955T Fairchild Semiconductor KSE2955T - - -
RFQ
ECAD 5328 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-220-3 600 MW To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 895 60 v 10 a 700 ähm PNP 8v @ 3,3a, 10a 20 @ 4a, 4V 2MHz
FQI2N80TU Fairchild Semiconductor FQI2N80TU 0,5100
RFQ
ECAD 3145 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 550 N-Kanal 800 V 2.4a (TC) 10V 6.3OHM @ 900 mA, 10V 5 V @ 250 ähm 15 NC @ 10 V ± 30 v 550 PF @ 25 V. - - - 3.13W (TA), 85W (TC)
2N7000BU Fairchild Semiconductor 2N7000BU - - -
RFQ
ECAD 9862 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) MOSFET (Metalloxid) To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 10.000 N-Kanal 60 v 200 Ma (TC) 4,5 V, 10 V. 5ohm @ 500 mA, 10V 3V @ 1ma ± 20 V 50 PF @ 25 V. - - - 400 MW (TA)
KSC2316OTA Fairchild Semiconductor KSC2316OTA 1.0000
RFQ
ECAD 9768 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) 900 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 2.000 120 v 800 mA 100NA (ICBO) Npn 1v @ 50 mA, 500 mA 80 @ 100ma, 5V 120 MHz
FQB2P40TM Fairchild Semiconductor FQB2P40TM 0,4100
RFQ
ECAD 4027 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 29 P-Kanal 400 V 2a (TC) 10V 6,5ohm @ 1a, 10V 5 V @ 250 ähm 13 NC @ 10 V ± 30 v 350 PF @ 25 V. - - - 3.13W (TA), 63W (TC)
MMBT2222 Fairchild Semiconductor MMBT2222 0,0200
RFQ
ECAD 66 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 MMBT2222 350 MW SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 3.000 30 v 600 mA 10 µA (ICBO) Npn 1,6 V @ 50 Ma, 500 mA 100 @ 150 mA, 10V 250 MHz
HUF76407D3ST Fairchild Semiconductor HUF76407D3ST - - -
RFQ
ECAD 2034 0.00000000 Fairchild Semiconductor Ultrafet® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8542.39.0001 1 N-Kanal 60 v 12a (TC) 4,5 V, 10 V. 92mohm @ 13a, 10V 3v @ 250 ähm 11.3 NC @ 10 V ± 16 v 350 PF @ 25 V. - - - 38W (TC)
FDPF55N06 Fairchild Semiconductor FDPF55N06 0,8700
RFQ
ECAD 97 0.00000000 Fairchild Semiconductor Unifet ™ Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 344 N-Kanal 60 v 55a (TC) 10V 22mohm @ 27.5a, 10V 4v @ 250 ähm 37 NC @ 10 V. ± 25 V 1510 PF @ 25 V. - - - 48W (TC)
FDPF9N50NZ Fairchild Semiconductor FDPF9N50NZ - - -
RFQ
ECAD 2422 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220-3 Fullpack/to-220F-3SG - - - Rohs Nick Konform Verkäfer undefiniert 2156-FDPF9N50NZ-600039 1 N-Kanal 500 V 9a (TC) 10V 800 MOHM @ 4,5A, 10 V. 4v @ 250 ähm 35 NC @ 10 V ± 30 v 1030 PF @ 25 V. - - - 44W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus