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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FDY4001CZCT | - - - | ![]() | 6907 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDY40 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 2.101 | - - - | |||||||||||||||||||||||||||||||||
![]() | FDD850N10LD | - - - | ![]() | 7269 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-5, dpak (4 Leitete + Tab), to-252ad | MOSFET (Metalloxid) | To-252-4 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.500 | N-Kanal | 100 v | 15,3a (TC) | 75mohm @ 12a, 10V | 2,5 V @ 250 ähm | 28.9 NC @ 10 V. | ± 20 V | 1465 PF @ 25 V. | - - - | 42W (TC) | |||||||||||||||||||
![]() | HUF76423D3 | 0,4100 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 32mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 16 v | 1060 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||
![]() | FJX4006RTF | 0,0300 | ![]() | 93 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-70, SOT-323 | FJX400 | 200 MW | SC-70 (SOT323) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 10 Kohms | 47 Kohms | ||||||||||||||||||||
![]() | FDS3670 | 1.6700 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 6.3a (ta) | 6 V, 10V | 32mohm @ 6.3a, 10V | 4v @ 250 ähm | 80 nc @ 10 v | ± 20 V | 2490 PF @ 50 V | - - - | 2,5 W (TA) | ||||||||||||||||||||
![]() | KSB564AOBU | - - - | ![]() | 6910 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 800 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 8.000 | 25 v | 1 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 70 @ 100 mA, 1V | 110 MHz | ||||||||||||||||||||||||
![]() | J175 | 0,1200 | ![]() | 2089 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 2156-J175-FS | Ear99 | 8541.21.0095 | 2.000 | P-Kanal | 5.5PF @ 10V (VGS) | 30 v | 7 ma @ 15 V | 3 v @ 10 na | 125 Ohm | ||||||||||||||||||||||||
![]() | 2N4125BU | - - - | ![]() | 6970 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.000 | 30 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 50 @ 2MA, 1V | - - - | ||||||||||||||||||||||||
![]() | FQD20N06TF | 0,4000 | ![]() | 5421 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 525 | N-Kanal | 60 v | 16,8a (TC) | 10V | 63mohm @ 8.4a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 590 PF @ 25 V. | - - - | 2,5 W (TA), 38W (TC) | ||||||||||||||||||||
![]() | FDMD8280 | - - - | ![]() | 1017 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 12-Powerwdfn | FDMD82 | MOSFET (Metalloxid) | 1W | 12-Power3.3x5 | Herunterladen | 0000.00.0000 | 1 | 2 n-kanal (dual) | 80V | 11a | 8.2mohm @ 11a, 10V | 4v @ 250 ähm | 44nc @ 10v | 3050pf @ 40V | - - - | |||||||||||||||||||||||
![]() | FQP4N20 | 0,3100 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 3.6a (TC) | 10V | 1,4OHM @ 1,8a, 10V | 5 V @ 250 ähm | 6,5 NC @ 10 V. | ± 30 v | 220 PF @ 25 V. | - - - | 45W (TC) | ||||||||||||||||||||
![]() | SSR1N60BTM | 0,1800 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 900 Ma (TC) | 10V | 12ohm @ 450 mA, 10V | 4v @ 250 ähm | 7,7 NC @ 10 V | ± 30 v | 215 PF @ 25 V. | - - - | 2,5 W (TA), 28 W (TC) | ||||||||||||||||||||
![]() | MmbTH10 | 0,0300 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-MMBTH10-600039 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | IRF644B-FP001 | 1.8400 | ![]() | 980 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-IRF644B-FP001-600039 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 250 V | 14a (TC) | 10V | 280mohm @ 7a, 10V | 4v @ 250 ähm | 60 nc @ 10 v | ± 30 v | 1600 PF @ 25 V. | - - - | 139W (TC) | ||||||||||||||||||
![]() | Fqpf5n30 | 0,4200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 300 V | 3.9a (TC) | 10V | 900MOHM @ 1.95a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 35W (TC) | ||||||||||||||||||||
![]() | FDPF041N06BL1 | 1.1500 | ![]() | 755 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 283 | N-Kanal | 60 v | 77a (TC) | 10V | 4.1MOHM @ 77A, 10V | 4v @ 250 ähm | 69 NC @ 10 V | ± 20 V | 5690 PF @ 30 V | - - - | 44.1W (TC) | |||||||||||||||||||||
![]() | FDS8874 | 0,5400 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 V, 10 V. | 5,5 MOHM @ 16A, 10V | 2,5 V @ 250 ähm | 72 NC @ 10 V | ± 20 V | 3990 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||||||||
![]() | FQB19N20LTM | 1.0000 | ![]() | 5433 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 21a (TC) | 5v, 10V | 140 MOHM @ 10,5a, 10V | 2v @ 250 ähm | 35 NC @ 5 V. | ± 20 V | 2200 PF @ 25 V. | - - - | 3.13W (TA), 140W (TC) | |||||||||||||||||||||
![]() | SFS9640 | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 200 v | 6.2a (TC) | 10V | 500mohm @ 3.1a, 10 V. | 4v @ 250 ähm | 59 NC @ 10 V | ± 30 v | 1585 PF @ 25 V. | - - - | 40W (TC) | ||||||||||||||||||
![]() | Fqpf11n50cf | 1.5600 | ![]() | 985 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 193 | N-Kanal | 500 V | 11a (TC) | 10V | 550MOHM @ 5.5A, 10V | 4v @ 250 ähm | 55 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||
![]() | SS9014BBU | - - - | ![]() | 2021 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 450 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 50na (ICBO) | Npn | 300 mV @ 5ma, 100 mA | 100 @ 1ma, 5V | 270 MHz | ||||||||||||||||||||||||
![]() | KSE2955T | - - - | ![]() | 5328 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 600 MW | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 895 | 60 v | 10 a | 700 ähm | PNP | 8v @ 3,3a, 10a | 20 @ 4a, 4V | 2MHz | ||||||||||||||||||||||||
![]() | FQI2N80TU | 0,5100 | ![]() | 3145 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 550 | N-Kanal | 800 V | 2.4a (TC) | 10V | 6.3OHM @ 900 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 550 PF @ 25 V. | - - - | 3.13W (TA), 85W (TC) | ||||||||||||||||||||
![]() | 2N7000BU | - - - | ![]() | 9862 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | MOSFET (Metalloxid) | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 10.000 | N-Kanal | 60 v | 200 Ma (TC) | 4,5 V, 10 V. | 5ohm @ 500 mA, 10V | 3V @ 1ma | ± 20 V | 50 PF @ 25 V. | - - - | 400 MW (TA) | |||||||||||||||||||||
![]() | KSC2316OTA | 1.0000 | ![]() | 9768 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 900 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 120 v | 800 mA | 100NA (ICBO) | Npn | 1v @ 50 mA, 500 mA | 80 @ 100ma, 5V | 120 MHz | ||||||||||||||||||||||||
![]() | FQB2P40TM | 0,4100 | ![]() | 4027 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 29 | P-Kanal | 400 V | 2a (TC) | 10V | 6,5ohm @ 1a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 3.13W (TA), 63W (TC) | ||||||||||||||||||||
![]() | MMBT2222 | 0,0200 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT2222 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 600 mA | 10 µA (ICBO) | Npn | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 250 MHz | |||||||||||||||||||||||
![]() | HUF76407D3ST | - - - | ![]() | 2034 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||
![]() | FDPF55N06 | 0,8700 | ![]() | 97 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 344 | N-Kanal | 60 v | 55a (TC) | 10V | 22mohm @ 27.5a, 10V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 25 V | 1510 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||||||||
![]() | FDPF9N50NZ | - - - | ![]() | 2422 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220-3 Fullpack/to-220F-3SG | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDPF9N50NZ-600039 | 1 | N-Kanal | 500 V | 9a (TC) | 10V | 800 MOHM @ 4,5A, 10 V. | 4v @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1030 PF @ 25 V. | - - - | 44W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus