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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung Gewinnen ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Reverse Recovery Time (TRR) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Spannung - Breakdown (V (BR) GSS) Strom - Drain (IDSS) @ VDS (VGS = 0) Spannung - Cutoff (VGS OFF) @ id Strom - Sammler Cutoff (max) Ausfluss - rds (on) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang RAUSCHFIGUR (DB Typ @ f)
HUFA76413D3ST Fairchild Semiconductor HUFA76413D3ST 0,2800
RFQ
ECAD 12 0.00000000 Fairchild Semiconductor Ultrafet ™ Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 60 v 20A (TC) 4,5 V, 10 V. 49mohm @ 20a, 10V 3v @ 250 ähm 20 nc @ 10 v ± 16 v 645 PF @ 25 V. - - - 60 W (TC)
KST4126MTF Fairchild Semiconductor KST4126MTF 0,0200
RFQ
ECAD 89 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet - - - Oberflächenhalterung To-236-3, sc-59, SOT-23-3 350 MW SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 3.000 25 v 200 ma 50na (ICBO) PNP 400mv @ 5ma, 50 mA 120 @ 2MA, 1V 250 MHz
HUF75842S3 Fairchild Semiconductor HUF75842S3 1,5000
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv HUF75842 - - - - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert Ear99 8542.39.0001 1 - - -
2SA1507T Fairchild Semiconductor 2SA1507T 0,3200
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-225aa, to-126-3 1,5 w To-225-3 Herunterladen Nicht Anwendbar Ear99 8541.29.0075 200 160 v 1,5 a 1 µA (ICBO) PNP 450 MV @ 50 Ma, 500 mA 200 @ 100ma, 5V 120 MHz
2SA1708T-AN Fairchild Semiconductor 2SA1708T-AN - - -
RFQ
ECAD 8379 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch SC-71 1 w 3-nmp - - - Rohs Nick Konform Verkäfer undefiniert 2156-2SA1708T-AN-600039 1 100 v 1 a 100na PNP 600mv @ 40 mA, 400 mA 200 @ 100ma, 5V 120 MHz
BD17510STU Fairchild Semiconductor BD17510stu - - -
RFQ
ECAD 3315 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-225aa, to-126-3 30 w To-126-3 Herunterladen Ear99 8541.29.0095 553 45 V 3 a 100 µA (ICBO) Npn 800mv @ 100 mA, 1a 63 @ 150 mA, 2V 3MHz
KSA643CYTA Fairchild Semiconductor KSA643CYTA 0,0400
RFQ
ECAD 6054 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 500 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 1.850 20 v 500 mA 200na (ICBO) PNP 400 mv @ 50 mA, 500 mA 120 @ 100 mA, 1V - - -
FQP19N20L Fairchild Semiconductor FQP19N20L - - -
RFQ
ECAD 3815 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 200 v 21a (TC) 5v, 10V 140 MOHM @ 10,5a, 10V 2v @ 250 ähm 35 NC @ 5 V. ± 20 V 2200 PF @ 25 V. - - - 140W (TC)
FDH210N08 Fairchild Semiconductor FDH210N08 - - -
RFQ
ECAD 5855 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen Ear99 8542.39.0001 1 N-Kanal 75 V - - - 10V - - - - - - ± 20 V - - - 462W (TC)
SS9012GBU Fairchild Semiconductor SS9012GBU 0,0200
RFQ
ECAD 318 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.21.0095 1 20 v 500 mA 100NA (ICBO) PNP 600mv @ 50 mA, 500 mA 64 @ 50 Ma, 1V - - -
KSA733CYBU Fairchild Semiconductor KSA733CYBU - - -
RFQ
ECAD 3933 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 250 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.000 50 v 150 Ma 100NA (ICBO) PNP 300mv @ 10 mA, 100 mA 120 @ 1ma, 6v 180 MHz
FQD1N50TM Fairchild Semiconductor FQD1N50TM 0,5300
RFQ
ECAD 241 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 500 V 1.1a (TC) 10V 9OHM @ 550 mA, 10V 5 V @ 250 ähm 5,5 NC @ 10 V. ± 30 v 150 PF @ 25 V. - - - 2,5 W (TA), 25 W (TC)
FDD8750 Fairchild Semiconductor FDD8750 0,3700
RFQ
ECAD 8 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 25 v 6,5a (TA), 2,7a (TC) 4,5 V, 10 V. 40mohm @ 2,7a, 10V 2,5 V @ 250 ähm 9 NC @ 10 V. ± 20 V 425 PF @ 13 V. - - - 3.7W (TA), 18W (TC)
FDD5810 Fairchild Semiconductor FDD5810 0,9000
RFQ
ECAD 540 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 60 v 7.4a (TA), 37a (TC) 5v, 10V 22mohm @ 32a, 10V 2v @ 250 ähm 34 NC @ 10 V. ± 20 V 1890 PF @ 25 V. - - - 72W (TC)
FQD20N06LETM Fairchild Semiconductor Fqd20n06letm 0,3100
RFQ
ECAD 54 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 60 v 17.2a (TC) 5v, 10V 60MOHM @ 8.6a, 10V 2,5 V @ 250 ähm 13 NC @ 5 V ± 20 V 665 PF @ 25 V. - - - 2,5 W (TA), 38W (TC)
KSC1393YBU Fairchild Semiconductor KSC1393YBU 0,0200
RFQ
ECAD 879 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 250 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.000 20 dB ~ 24 dB 30V 20 ma Npn 90 @ 2MA, 10V 700 MHz 2db ~ 3db @ 200 MHz
HUFA75307D3ST Fairchild Semiconductor HUFA75307D3ST 0,2400
RFQ
ECAD 6 0.00000000 Fairchild Semiconductor Ultrafet ™ Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 55 v 15a (TC) 10V 90 MOHM @ 15a, 10V 4v @ 250 ähm 20 NC @ 20 V ± 20 V 250 PF @ 25 V. - - - 45W (TC)
FQB13N06LTM Fairchild Semiconductor FQB13N06LTM 0,3700
RFQ
ECAD 6352 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 569 N-Kanal 60 v 13,6a (TC) 5v, 10V 110MOHM @ 6.8a, 10V 2,5 V @ 250 ähm 6.4 NC @ 5 V. ± 20 V 350 PF @ 25 V. - - - 3,75W (TA), 45W (TC)
SGP13N60UFDTU Fairchild Semiconductor SGP13N60UFDTU 1.2100
RFQ
ECAD 9 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 SGP13N60 Standard 60 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 300 V, 6,5a, 50 Ohm, 15 V. 55 ns - - - 600 V 13 a 52 a 2,6 V @ 15V, 6,5a 85 µJ (EIN), 95 µJ (AUS) 25 NC 20ns/70ns
PN4091 Fairchild Semiconductor PN4091 0,0600
RFQ
ECAD 26 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.000 N-Kanal 16PF @ 20V 40 v 30 mA @ 20 v 5 V @ 1 na 30 Ohm
FQP70N08 Fairchild Semiconductor FQP70N08 1.1200
RFQ
ECAD 797 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 80 v 70a (TC) 10V 17mohm @ 35a, 10V 4v @ 250 ähm 98 NC @ 10 V. ± 25 V 2700 PF @ 25 V. - - - 155W (TC)
FGA180N30DTU Fairchild Semiconductor FGA180N30DTU 4.0400
RFQ
ECAD 15 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 FGA180 Standard 480 w To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 30 - - - 21 ns - - - 300 V 180 a 450 a 1,4 V @ 15V, 40a - - - 185 NC - - -
USB10H Fairchild Semiconductor USB10H 1.0000
RFQ
ECAD 1200 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung SOT-23-6 Dünn, TSOT-23-6 USB10 MOSFET (Metalloxid) 700 MW Supersot ™ -6 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 3.000 2 p-kanal (dual) 20V 1.9a 170 MOHM @ 1,9a, 4,5 V. 1,5 V @ 250 ähm 4.2nc @ 4.5V 441pf @ 10v Logikpegel -tor
FDD6N25TF Fairchild Semiconductor Fdd6n25tf - - -
RFQ
ECAD 4233 0.00000000 Fairchild Semiconductor Unifet ™ Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 6 N-Kanal 250 V 4.4a (TC) 10V 1,1OHM @ 2,2a, 10 V. 5 V @ 250 ähm 6 nc @ 10 v ± 30 v 250 PF @ 25 V. - - - 50W (TC)
FQB6N50TM Fairchild Semiconductor FQB6N50TM 0,7200
RFQ
ECAD 79 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 800 N-Kanal 500 V 5.5a (TC) 10V 1,3OHM @ 2,8a, 10V 5 V @ 250 ähm 22 NC @ 10 V. ± 30 v 790 PF @ 25 V. - - - 3.13W (TA), 130 W (TC)
FQPF90N10V2 Fairchild Semiconductor Fqpf90n10v2 2.3700
RFQ
ECAD 809 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 100 v 90a (TC) 10V 10MOHM @ 45A, 10V 4v @ 250 ähm 191 NC @ 10 V. ± 30 v 6150 PF @ 25 V. - - - 83W (TC)
HUF76423D3S Fairchild Semiconductor HUF76423D3S 0,4100
RFQ
ECAD 8 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.800 N-Kanal 60 v 20A (TC) 4,5 V, 10 V. 32mohm @ 20a, 10V 3v @ 250 ähm 34 NC @ 10 V. ± 16 v 1060 PF @ 25 V. - - - 85W (TC)
FQP4N90 Fairchild Semiconductor FQP4N90 1.5900
RFQ
ECAD 2 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 189 N-Kanal 900 V 4.2a (TC) 10V 3,3OHM @ 2,1a, 10 V. 5 V @ 250 ähm 30 NC @ 10 V ± 30 v 1100 PF @ 25 V. - - - 140W (TC)
SGW5N60RUFDTM Fairchild Semiconductor SGW5N60RUFDTM 0,8500
RFQ
ECAD 1026 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet - - - Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab Sgw5n Standard 60 w D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 291 300 V, 5a, 40 Ohm, 15 V 55 ns - - - 600 V 8 a 15 a 2,8 V @ 15V, 5a 88 µJ (EIN), 107 um (AUS) 16 NC 13ns/34ns
FDS7088SN3 Fairchild Semiconductor FDS7088SN3 1.4100
RFQ
ECAD 10 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-so Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 21a (ta) 4,5 V, 10 V. 4mohm @ 21a, 10V 3V @ 1ma 80 nc @ 10 v ± 20 V 3230 PF @ 15 V - - - 3W (TA)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus