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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | RAUSCHFIGUR (DB Typ @ f) |
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![]() | HUFA76413D3ST | 0,2800 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 49mohm @ 20a, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 16 v | 645 PF @ 25 V. | - - - | 60 W (TC) | |||||||||||||||||||||||||||||
![]() | KST4126MTF | 0,0200 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | |||||||||||||||||||||||||||||||||
![]() | HUF75842S3 | 1,5000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF75842 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||||||||||||||||||||||||
2SA1507T | 0,3200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,5 w | To-225-3 | Herunterladen | Nicht Anwendbar | Ear99 | 8541.29.0075 | 200 | 160 v | 1,5 a | 1 µA (ICBO) | PNP | 450 MV @ 50 Ma, 500 mA | 200 @ 100ma, 5V | 120 MHz | ||||||||||||||||||||||||||||||||||
![]() | 2SA1708T-AN | - - - | ![]() | 8379 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | SC-71 | 1 w | 3-nmp | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-2SA1708T-AN-600039 | 1 | 100 v | 1 a | 100na | PNP | 600mv @ 40 mA, 400 mA | 200 @ 100ma, 5V | 120 MHz | |||||||||||||||||||||||||||||||||
![]() | BD17510stu | - - - | ![]() | 3315 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 30 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 553 | 45 V | 3 a | 100 µA (ICBO) | Npn | 800mv @ 100 mA, 1a | 63 @ 150 mA, 2V | 3MHz | ||||||||||||||||||||||||||||||||||
![]() | KSA643CYTA | 0,0400 | ![]() | 6054 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.850 | 20 v | 500 mA | 200na (ICBO) | PNP | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | |||||||||||||||||||||||||||||||||
![]() | FQP19N20L | - - - | ![]() | 3815 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 21a (TC) | 5v, 10V | 140 MOHM @ 10,5a, 10V | 2v @ 250 ähm | 35 NC @ 5 V. | ± 20 V | 2200 PF @ 25 V. | - - - | 140W (TC) | |||||||||||||||||||||||||||||
![]() | FDH210N08 | - - - | ![]() | 5855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 75 V | - - - | 10V | - - - | - - - | ± 20 V | - - - | 462W (TC) | ||||||||||||||||||||||||||||||||
![]() | SS9012GBU | 0,0200 | ![]() | 318 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | 20 v | 500 mA | 100NA (ICBO) | PNP | 600mv @ 50 mA, 500 mA | 64 @ 50 Ma, 1V | - - - | |||||||||||||||||||||||||||||||
![]() | KSA733CYBU | - - - | ![]() | 3933 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 120 @ 1ma, 6v | 180 MHz | |||||||||||||||||||||||||||||||||
![]() | FQD1N50TM | 0,5300 | ![]() | 241 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 500 V | 1.1a (TC) | 10V | 9OHM @ 550 mA, 10V | 5 V @ 250 ähm | 5,5 NC @ 10 V. | ± 30 v | 150 PF @ 25 V. | - - - | 2,5 W (TA), 25 W (TC) | |||||||||||||||||||||||||||||
![]() | FDD8750 | 0,3700 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 25 v | 6,5a (TA), 2,7a (TC) | 4,5 V, 10 V. | 40mohm @ 2,7a, 10V | 2,5 V @ 250 ähm | 9 NC @ 10 V. | ± 20 V | 425 PF @ 13 V. | - - - | 3.7W (TA), 18W (TC) | |||||||||||||||||||||||||||||
![]() | FDD5810 | 0,9000 | ![]() | 540 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 7.4a (TA), 37a (TC) | 5v, 10V | 22mohm @ 32a, 10V | 2v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1890 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||||||||
![]() | Fqd20n06letm | 0,3100 | ![]() | 54 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 17.2a (TC) | 5v, 10V | 60MOHM @ 8.6a, 10V | 2,5 V @ 250 ähm | 13 NC @ 5 V | ± 20 V | 665 PF @ 25 V. | - - - | 2,5 W (TA), 38W (TC) | |||||||||||||||||||||||||||||
![]() | KSC1393YBU | 0,0200 | ![]() | 879 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 20 dB ~ 24 dB | 30V | 20 ma | Npn | 90 @ 2MA, 10V | 700 MHz | 2db ~ 3db @ 200 MHz | |||||||||||||||||||||||||||||||||
![]() | HUFA75307D3ST | 0,2400 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 55 v | 15a (TC) | 10V | 90 MOHM @ 15a, 10V | 4v @ 250 ähm | 20 NC @ 20 V | ± 20 V | 250 PF @ 25 V. | - - - | 45W (TC) | |||||||||||||||||||||||||||||
![]() | FQB13N06LTM | 0,3700 | ![]() | 6352 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 569 | N-Kanal | 60 v | 13,6a (TC) | 5v, 10V | 110MOHM @ 6.8a, 10V | 2,5 V @ 250 ähm | 6.4 NC @ 5 V. | ± 20 V | 350 PF @ 25 V. | - - - | 3,75W (TA), 45W (TC) | |||||||||||||||||||||||||||||
![]() | SGP13N60UFDTU | 1.2100 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | SGP13N60 | Standard | 60 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 300 V, 6,5a, 50 Ohm, 15 V. | 55 ns | - - - | 600 V | 13 a | 52 a | 2,6 V @ 15V, 6,5a | 85 µJ (EIN), 95 µJ (AUS) | 25 NC | 20ns/70ns | ||||||||||||||||||||||||||||
![]() | PN4091 | 0,0600 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 16PF @ 20V | 40 v | 30 mA @ 20 v | 5 V @ 1 na | 30 Ohm | ||||||||||||||||||||||||||||||||||
![]() | FQP70N08 | 1.1200 | ![]() | 797 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 70a (TC) | 10V | 17mohm @ 35a, 10V | 4v @ 250 ähm | 98 NC @ 10 V. | ± 25 V | 2700 PF @ 25 V. | - - - | 155W (TC) | |||||||||||||||||||||||||||||
![]() | FGA180N30DTU | 4.0400 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FGA180 | Standard | 480 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | 21 ns | - - - | 300 V | 180 a | 450 a | 1,4 V @ 15V, 40a | - - - | 185 NC | - - - | ||||||||||||||||||||||||||||
![]() | USB10H | 1.0000 | ![]() | 1200 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | USB10 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 1.9a | 170 MOHM @ 1,9a, 4,5 V. | 1,5 V @ 250 ähm | 4.2nc @ 4.5V | 441pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | Fdd6n25tf | - - - | ![]() | 4233 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 6 | N-Kanal | 250 V | 4.4a (TC) | 10V | 1,1OHM @ 2,2a, 10 V. | 5 V @ 250 ähm | 6 nc @ 10 v | ± 30 v | 250 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||||||||
![]() | FQB6N50TM | 0,7200 | ![]() | 79 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 500 V | 5.5a (TC) | 10V | 1,3OHM @ 2,8a, 10V | 5 V @ 250 ähm | 22 NC @ 10 V. | ± 30 v | 790 PF @ 25 V. | - - - | 3.13W (TA), 130 W (TC) | |||||||||||||||||||||||||||||
![]() | Fqpf90n10v2 | 2.3700 | ![]() | 809 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 100 v | 90a (TC) | 10V | 10MOHM @ 45A, 10V | 4v @ 250 ähm | 191 NC @ 10 V. | ± 30 v | 6150 PF @ 25 V. | - - - | 83W (TC) | |||||||||||||||||||||||||||||
![]() | HUF76423D3S | 0,4100 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 20A (TC) | 4,5 V, 10 V. | 32mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 16 v | 1060 PF @ 25 V. | - - - | 85W (TC) | |||||||||||||||||||||||||||||
![]() | FQP4N90 | 1.5900 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 189 | N-Kanal | 900 V | 4.2a (TC) | 10V | 3,3OHM @ 2,1a, 10 V. | 5 V @ 250 ähm | 30 NC @ 10 V | ± 30 v | 1100 PF @ 25 V. | - - - | 140W (TC) | |||||||||||||||||||||||||||||
![]() | SGW5N60RUFDTM | 0,8500 | ![]() | 1026 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Sgw5n | Standard | 60 w | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 291 | 300 V, 5a, 40 Ohm, 15 V | 55 ns | - - - | 600 V | 8 a | 15 a | 2,8 V @ 15V, 5a | 88 µJ (EIN), 107 um (AUS) | 16 NC | 13ns/34ns | ||||||||||||||||||||||||||||
![]() | FDS7088SN3 | 1.4100 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 21a (ta) | 4,5 V, 10 V. | 4mohm @ 21a, 10V | 3V @ 1ma | 80 nc @ 10 v | ± 20 V | 3230 PF @ 15 V | - - - | 3W (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus