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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Eingabekapazität (cies) @ vce | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | IRFW730BTM | 0,6400 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 400 V | 5.5a (TC) | 10V | 1OHM @ 2,75a, 10V | 4v @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1000 PF @ 25 V. | - - - | 3.13W (TA), 73W (TC) | |||||||||||||||||||
![]() | FMM6G30US60 | 28.1700 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | K. Loch | Modul | 104 w | DREIPHASENBRÜCKENGLECHRICHTER | - - - | Herunterladen | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-FMM6G30US60 | Ear99 | 8541.29.0095 | 1 | Dreiphasen -Wechselrichter mit Bremse | - - - | 600 V | 30 a | 2,7 V @ 15V, 30a | 250 µA | Ja | 2.1 NF @ 30 V | |||||||||||||||||||||
![]() | KST4126MTF | 0,0200 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | |||||||||||||||||||||||||
![]() | FQB6N70TM | 2.2500 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 700 V | 6.2a (TC) | 10V | 1,5OHM @ 3,1a, 10 V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1400 PF @ 25 V. | - - - | 3.13W (TA), 142W (TC) | |||||||||||||||||||||
![]() | NDS352p | 0,3000 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 987 | P-Kanal | 20 v | 850 Ma (TA) | 4,5 V, 10 V. | 350Mohm @ 1a, 10V | 2,5 V @ 250 ähm | 4 NC @ 5 V. | ± 12 V | 125 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||||||||
![]() | FDD3680 | - - - | ![]() | 5170 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 25a (ta) | 6 V, 10V | 46mohm @ 6.1a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 20 V | 1735 PF @ 50 V | - - - | 68W (TA) | ||||||||||||||||||||||
![]() | Fqd5n15tf | 0,2000 | ![]() | 7085 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.301 | N-Kanal | 150 v | 4.3a (TC) | 10V | 800mohm @ 2.15a, 10 V. | 4v @ 250 ähm | 7 NC @ 10 V | ± 25 V | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||
![]() | HUF76645S3ST | 2.1800 | ![]() | 788 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 75a (TC) | 4,5 V, 10 V. | 14mohm @ 75a, 10V | 3v @ 250 ähm | 153 NC @ 10 V | ± 16 v | 4400 PF @ 25 V. | - - - | 310W (TC) | |||||||||||||||||||
FDB0260N1007L | - - - | ![]() | 8700 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-7, d²pak (6 Leads + Tab) | MOSFET (Metalloxid) | To-263-7 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 200a (TC) | 10V | 2,6 MOHM @ 27A, 10V | 4v @ 250 ähm | 118 NC @ 10 V | ± 20 V | 8545 PF @ 50 V | - - - | 3,8 W (TA), 250 W (TC) | |||||||||||||||||||||||
![]() | FDS6894a | 0,7200 | ![]() | 7861 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS68 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 408 | 2 n-kanal (dual) | 20V | 8a | 17mohm @ 8a, 4,5 V. | 1,5 V @ 250 ähm | 24nc @ 4,5 V | 1676PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||
![]() | BC548ATA | 0,0200 | ![]() | 4991 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2,432 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 110 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||
![]() | FDP8876 | - - - | ![]() | 1788 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 30 v | 70a (TC) | 4,5 V, 10 V. | 8.7mohm @ 40a, 10V | 2,5 V @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1700 PF @ 15 V | - - - | 70W (TC) | |||||||||||||||||||||
![]() | KSA1156YSTSTU | - - - | ![]() | 6983 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSA1156 | 1 w | To-126-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 500 mA | 100 µA (ICBO) | PNP | 1v @ 10 mA, 100 mA | 100 @ 100 Ma, 5V | - - - | ||||||||||||||||||||||
![]() | FDD8451 | 0,3600 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 830 | N-Kanal | 40 v | 9A (TA), 28a (TC) | 4,5 V, 10 V. | 24MOHM @ 9A, 10V | 3v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 990 PF @ 20 V | - - - | 30W (TC) | ||||||||||||||||||||||
![]() | Fqu8n25tu | 0,6400 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 6.2a (TC) | 10V | 550MOHM @ 3.1a, 10 V. | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 530 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||||||||||||||||
![]() | BC239BTA | 0,0200 | ![]() | 6681 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,241 | 25 v | 100 ma | 15na | Npn | 600mv @ 5ma, 100 mA | 180 @ 2MA, 5V | 250 MHz | |||||||||||||||||||||||||
![]() | IRLR130ATM | 0,8100 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 13a (TC) | 5v | 120 MOHM @ 6.5A, 5V | 2v @ 250 ähm | 24 nc @ 5 v | ± 20 V | 755 PF @ 25 V. | - - - | 2,5 W (TA), 46 W (TC) | |||||||||||||||||||||
![]() | FDS8433a | - - - | ![]() | 9410 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 5a (ta) | 2,5 V, 4,5 V. | 47mohm @ 5a, 4,5 V. | 1V @ 250 ähm | 28 NC @ 5 V | ± 8 v | 1130 PF @ 10 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||
![]() | FDMS3624S | - - - | ![]() | 6729 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3624 | MOSFET (Metalloxid) | 2,2 W (TA), 2,5W (TA) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 25 v | 17,5a (TA), 30a (TC), 30A (TA), 60A (TC) | 1,8 MOHM @ 30A, 10V, 5MOHM @ 17,5A, 10V | 2V @ 250 ähm 2,2 V @ 1ma | 26nc @ 10v, 59nc @ 10v | 1570PF @ 13V, 4045PF @ 13V | - - - | |||||||||||||||||||||||
![]() | FDMA3027PZ | 0,6500 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA3027 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 462 | 2 p-kanal (dual) | 30V | 3.3a | 87mohm @ 3.3a, 10V | 3v @ 250 ähm | 10nc @ 10v | 435PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||
![]() | HUF75645p3 | - - - | ![]() | 3066 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 238 NC @ 20 V | ± 20 V | 3790 PF @ 25 V. | 310W (TC) | |||||||||||||||||||||||
![]() | HUFA76407DK8T | 1.0000 | ![]() | 3298 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | HUFA76407 | MOSFET (Metalloxid) | 2.5W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 60 v | - - - | 90 MOHM @ 3,8a, 10V | 3v @ 250 ähm | 11.2nc @ 10v | 330pf @ 25v | Logikpegel -tor | ||||||||||||||||||||||
![]() | KSB772YS | 0,2200 | ![]() | 43 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Ear99 | 8542.39.0001 | 1,391 | ||||||||||||||||||||||||||||||||||||||
![]() | HUF76121D3ST | 0,4100 | ![]() | 76 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 20A (TC) | 4,5 V, 10 V. | 23mohm @ 20a, 10V | 3v @ 250 ähm | 30 NC @ 10 V | ± 20 V | 850 PF @ 25 V. | - - - | 75W (TC) | |||||||||||||||||||
![]() | KSR1004BU | 0,0700 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | KSR1004 | 300 MW | To-92-3 | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-kSR1004BU | Ear99 | 8541.21.0095 | 1 | 50 v | 100 ma | 100na | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||||||
![]() | KSH127TF-FS | 1.0000 | ![]() | 3250 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | Dpak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 8 a | 10 µA | PNP - Darlington | 4v @ 80 Ma, 8a | 1000 @ 4a, 4V | - - - | |||||||||||||||||||||||
![]() | FDS3612 | 0,6600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 3.4a (TA) | 6 V, 10V | 120 MOHM @ 3,4a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 20 V | 632 PF @ 50 V | - - - | 2,5 W (TA) | |||||||||||||||||||||
![]() | BC546BTA | - - - | ![]() | 4256 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | 65 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||
![]() | SI3445DV | 0,1200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 1 | P-Kanal | 20 v | 5.5a (TA) | 1,8 V, 4,5 V. | 33mohm @ 5,5a, 4,5 V. | 1,5 V @ 250 ähm | 30 NC @ 4,5 V. | ± 8 v | 1926 PF @ 10 V. | - - - | 800 MW (TA) | |||||||||||||||||||
![]() | 2n3906tar | - - - | ![]() | 2685 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 250 MHz |
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