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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | 2N4401NLBU | 0,2900 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 40 v | 600 mA | - - - | Npn | 750 MV @ 50 Ma, 500 mA | 100 @ 150 mA, 1V | 250 MHz | |||||||||||||||||||||
![]() | KSC1730YTA | 0,0600 | ![]() | 264 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | - - - | 15 v | 50 ma | Npn | 120 @ 5ma, 10 V. | 1,1 GHz | - - - | |||||||||||||||||||||
![]() | FDMC8884-FS | - - - | ![]() | 5564 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | N-Kanal | 30 v | 9A (TA), 15a (TC) | 19Mohm @ 9a, 10V | 2,5 V @ 250 ähm | 14 NC @ 10 V | ± 20 V | 685 PF @ 15 V | - - - | 2,3 W (TA), 18W (TC) | ||||||||||||||||
![]() | BDW93C | 1.0000 | ![]() | 3705 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 100 v | 12 a | 1ma | NPN - Darlington | 3v @ 100 mA, 10a | 750 @ 5a, 3v | - - - | ||||||||||||||||||||||
![]() | FDMT800152DC | 3.3400 | ![]() | 7916 | 0.00000000 | Fairchild Semiconductor | Dual Cool ™, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | 8-Dual Cool ™ 88 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 13a (ta), 72a (TC) | 6 V, 10V | 9mohm @ 13a, 10V | 4v @ 250 ähm | 83 NC @ 10 V | ± 20 V | 5875 PF @ 75 V | - - - | 3.2W (TA), 113W (TC) | ||||||||||||||||||
![]() | KSH29CTF | - - - | ![]() | 2532 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH29 | 1,56 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 1 a | 50 µA | Npn | 700 MV @ 125 Ma, 1a | 15 @ 1a, 4V | 3MHz | ||||||||||||||||||
![]() | BC857BMTF | 0,0200 | ![]() | 6711 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC857 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 10,592 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||
![]() | FQB12N60TM | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 217 | N-Kanal | 600 V | 10.5a (TC) | 10V | 700MOHM @ 5.3A, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 3.13W (TA), 180 W (TC) | |||||||||||||||
![]() | FSBCW30 | 1.0000 | ![]() | 5927 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 500 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 32 v | 500 mA | 100NA (ICBO) | PNP | 300 mV @ 500 µA, 10 mA | 215 @ 2MA, 5V | - - - | |||||||||||||||||||||
![]() | FJC2383YTF | 1.0000 | ![]() | 8581 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 160 v | 1 a | 1 µA (ICBO) | Npn | 1,5 V @ 50 Ma, 500 mA | 160 @ 200 Ma, 5V | 100 MHz | |||||||||||||||||||||
![]() | TN3440A | 0,0700 | ![]() | 1238 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 833 | 250 V | 100 ma | 50 µA | Npn | 500mv @ 4ma, 50 mA | 40 @ 20 mA, 10V | 15 MHz | |||||||||||||||||||||
![]() | HUF75333S3 | 0,6200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 66a (TC) | 10V | 16mohm @ 66a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 150W (TC) | |||||||||||||||||
![]() | RF1S9640SM9A | 1.6400 | ![]() | 1199 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 165 | P-Kanal | 200 v | 11a (TC) | 10V | 500mohm @ 6a, 10V | 4v @ 250 ähm | 90 nc @ 10 v | ± 20 V | 1100 PF @ 25 V. | - - - | 125W (TC) | |||||||||||||||
![]() | KSB1116SYTA | 0,0500 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | |||||||||||||||||||||
![]() | BCX19 | 0,0500 | ![]() | 161 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX19 | 300 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.800 | 45 V | 500 mA | 100NA (ICBO) | Npn | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | ||||||||||||||||||
![]() | KSD1616YTA | - - - | ![]() | 9482 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.831 | 50 v | 1 a | 100NA (ICBO) | Npn | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 160 MHz | |||||||||||||||||||||
![]() | HUF76609D3S | 0,3900 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) | |||||||||||||||||
![]() | Fqpf4n60 | 0,7000 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 2.6a (TC) | 10V | 2,2OHM @ 1,3a, 10 V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 670 PF @ 25 V. | - - - | 36W (TC) | |||||||||||||||||
![]() | MPSW3725 | 0,1000 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 1 w | To-226-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 1.500 | 40 v | 1.2 a | 100NA (ICBO) | Npn | 950 mv @ 100 mA, 1a | 60 @ 100 mA, 1V | 250 MHz | |||||||||||||||||||||
![]() | FDI8442 | 1.5300 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 40 v | 23a (TA), 80A (TC) | 10V | 2,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 235 NC @ 10 V | ± 20 V | 12200 PF @ 25 V. | - - - | 254W (TC) | |||||||||||||||||
![]() | SFR9024TM | 0,4000 | ![]() | 5190 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 175 | P-Kanal | 60 v | 7.8a (TC) | 10V | 280 MOHM @ 3,9a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 600 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | |||||||||||||||||
![]() | FJC1308RTF | 0,0700 | ![]() | 5963 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | 2156-FJC1308RTF | Ear99 | 8541.21.0095 | 4.000 | 30 v | 3 a | 500NA | PNP | 450 MV @ 150 Ma, 1,5a | 180 @ 500 mA, 2V | - - - | ||||||||||||||||||||
![]() | FDD6796a | 0,5200 | ![]() | 749 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 750 | N-Kanal | 25 v | 20A (TA), 40A (TC) | 5.7mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1780 PF @ 13 V | - - - | 3,7W (TA), 42W (TC) | ||||||||||||||||
![]() | BC33716 | 0,0700 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||
![]() | BD241BTU | 0,2500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 40 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 80 v | 3 a | 300 µA | Npn | 1,2 V @ 600 Ma, 3a | 25 @ 1a, 4V | - - - | |||||||||||||||||||||
![]() | FDS7098N3 | 0,5100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 14a (ta) | 4,5 V, 10 V. | 9mohm @ 14a, 10V | 3v @ 250 ähm | 22 NC @ 5 V | ± 20 V | 1587 PF @ 15 V | - - - | 3W (TA) | |||||||||||||||||
![]() | BC549CBU | 0,0200 | ![]() | 4528 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||
![]() | KSR1004BU | 0,0700 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | KSR1004 | 300 MW | To-92-3 | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-kSR1004BU | Ear99 | 8541.21.0095 | 1 | 50 v | 100 ma | 100na | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 47 Kohms | 47 Kohms | |||||||||||||||||
![]() | Fqa8n90c | 1.8100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 8a (TC) | 10V | 1,9ohm @ 4a, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 240W (TC) | |||||||||||||||||
![]() | BCX70G | - - - | ![]() | 4855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX70 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 200 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 120 @ 2MA, 5V | 125 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
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