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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | KST4126MTF | 0,0200 | ![]() | 89 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 25 v | 200 ma | 50na (ICBO) | PNP | 400mv @ 5ma, 50 mA | 120 @ 2MA, 1V | 250 MHz | ||||||||||||||||||||||
![]() | FDS7098N3 | 0,5100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 14a (ta) | 4,5 V, 10 V. | 9mohm @ 14a, 10V | 3v @ 250 ähm | 22 NC @ 5 V | ± 20 V | 1587 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||||||
![]() | KSR1004BU | 0,0700 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 (to-226aa) | KSR1004 | 300 MW | To-92-3 | - - - | Rohs Nick Konform | UnberÜHrt Ereichen | 2156-kSR1004BU | Ear99 | 8541.21.0095 | 1 | 50 v | 100 ma | 100na | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 250 MHz | 47 Kohms | 47 Kohms | ||||||||||||||||||
![]() | BC549CBU | 0,0200 | ![]() | 4528 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||
![]() | FDMC0205 | 0,1900 | ![]() | 188 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMC02 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | |||||||||||||||||||||||||||||
FDB024N06 | - - - | ![]() | 8933 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 120a (TC) | 10V | 2,4 MOHM @ 75A, 10V | 4,5 V @ 250 ähm | 226 NC @ 10 V | ± 20 V | 14885 PF @ 25 V. | - - - | 395W (TC) | ||||||||||||||||||||
![]() | IRLS620A | 0,1900 | ![]() | 9510 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1.494 | N-Kanal | 200 v | 4.1a (TC) | 5v | 800mohm @ 2.05a, 5V | 2v @ 250 ähm | 15 NC @ 5 V | ± 20 V | 430 PF @ 25 V. | - - - | 26W (TC) | ||||||||||||||||
![]() | HUF76145S3 | - - - | ![]() | 8130 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 4,5 MOHM @ 75A, 10V | 3v @ 250 ähm | 156 NC @ 10 V | ± 20 V | 4900 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||||||
![]() | RF3S49092SM9A | 2.8100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-6, d²pak (5 Leads + Tab), to-263ba | RF3S49092 | MOSFET (Metalloxid) | 50W (TC) | To-263-5 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N und p-kanal | 12V | 20A (TC), 10a (TC) | 60MOHM @ 20A, 5V, 140MOHM @ 10A, 5V | 1V @ 250 ähm | 25nc @ 10v, 24nc @ 10v | 750pf @ 10v, 775PF @ 10v | Logikpegel -tor | |||||||||||||||||
![]() | Fqpf13n50csdtu | 0,9600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Fqpf1 | MOSFET (Metalloxid) | To-220f | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 13a (TC) | 10V | 480MOHM @ 6.5a, 10V | 4v @ 250 ähm | 56 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 48W (TC) | |||||||||||||||
![]() | BCX70G | - - - | ![]() | 4855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BCX70 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 200 ma | 20na | Npn | 550 MV @ 1,25 mA, 50 mA | 120 @ 2MA, 5V | 125 MHz | |||||||||||||||||||
![]() | BC33716 | 0,0700 | ![]() | 56 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||
![]() | FDD6796a | 0,5200 | ![]() | 749 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 750 | N-Kanal | 25 v | 20A (TA), 40A (TC) | 5.7mohm @ 20a, 10V | 3v @ 250 ähm | 34 NC @ 10 V. | ± 20 V | 1780 PF @ 13 V | - - - | 3,7W (TA), 42W (TC) | |||||||||||||||||
![]() | Fqa8n90c | 1.8100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 8a (TC) | 10V | 1,9ohm @ 4a, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 2080 PF @ 25 V. | - - - | 240W (TC) | ||||||||||||||||||
![]() | KSC1730YTA | 0,0600 | ![]() | 264 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | - - - | 15 v | 50 ma | Npn | 120 @ 5ma, 10 V. | 1,1 GHz | - - - | ||||||||||||||||||||||
![]() | FDMT800152DC | 3.3400 | ![]() | 7916 | 0.00000000 | Fairchild Semiconductor | Dual Cool ™, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powervdfn | MOSFET (Metalloxid) | 8-Dual Cool ™ 88 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 150 v | 13a (ta), 72a (TC) | 6 V, 10V | 9mohm @ 13a, 10V | 4v @ 250 ähm | 83 NC @ 10 V | ± 20 V | 5875 PF @ 75 V | - - - | 3.2W (TA), 113W (TC) | |||||||||||||||||||
![]() | FDMC8884-FS | - - - | ![]() | 5564 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | N-Kanal | 30 v | 9A (TA), 15a (TC) | 19Mohm @ 9a, 10V | 2,5 V @ 250 ähm | 14 NC @ 10 V | ± 20 V | 685 PF @ 15 V | - - - | 2,3 W (TA), 18W (TC) | |||||||||||||||||
![]() | BDW93C | 1.0000 | ![]() | 3705 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 100 v | 12 a | 1ma | NPN - Darlington | 3v @ 100 mA, 10a | 750 @ 5a, 3v | - - - | |||||||||||||||||||||||
![]() | KSH29CTF | - - - | ![]() | 2532 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH29 | 1,56 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 1 a | 50 µA | Npn | 700 MV @ 125 Ma, 1a | 15 @ 1a, 4V | 3MHz | |||||||||||||||||||
![]() | FQB12N60TM | 1.3900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | QFET ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 217 | N-Kanal | 600 V | 10.5a (TC) | 10V | 700MOHM @ 5.3A, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 3.13W (TA), 180 W (TC) | ||||||||||||||||
![]() | BC857BMTF | 0,0200 | ![]() | 6711 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC857 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 10,592 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | |||||||||||||||||||
![]() | FSBCW30 | 1.0000 | ![]() | 5927 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 500 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 32 v | 500 mA | 100NA (ICBO) | PNP | 300 mV @ 500 µA, 10 mA | 215 @ 2MA, 5V | - - - | ||||||||||||||||||||||
![]() | KSA643CYTA | 0,0400 | ![]() | 6054 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1.850 | 20 v | 500 mA | 200na (ICBO) | PNP | 400 mv @ 50 mA, 500 mA | 120 @ 100 mA, 1V | - - - | ||||||||||||||||||||||
![]() | Fjy4008r | 0,0200 | ![]() | 8624 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-89, SOT-490 | Fjy400 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 47 Kohms | 22 Kohms | ||||||||||||||||||||
![]() | BD17510stu | - - - | ![]() | 3315 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 30 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 553 | 45 V | 3 a | 100 µA (ICBO) | Npn | 800mv @ 100 mA, 1a | 63 @ 150 mA, 2V | 3MHz | |||||||||||||||||||||||
![]() | ISL9N322AP3 | 0,2400 | ![]() | 156 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 35a (TC) | 4,5 V, 10 V. | 22mohm @ 35a, 10V | 3v @ 250 ähm | 27 NC @ 10 V | ± 20 V | 970 PF @ 15 V | - - - | 50W (TA) | ||||||||||||||||
![]() | FQP19N20L | - - - | ![]() | 3815 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 21a (TC) | 5v, 10V | 140 MOHM @ 10,5a, 10V | 2v @ 250 ähm | 35 NC @ 5 V. | ± 20 V | 2200 PF @ 25 V. | - - - | 140W (TC) | ||||||||||||||||||
![]() | FDH210N08 | - - - | ![]() | 5855 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 75 V | - - - | 10V | - - - | - - - | ± 20 V | - - - | 462W (TC) | |||||||||||||||||||||
![]() | FJC2383YTF | 1.0000 | ![]() | 8581 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-243aa | 500 MW | SOT-89-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 4.000 | 160 v | 1 a | 1 µA (ICBO) | Npn | 1,5 V @ 50 Ma, 500 mA | 160 @ 200 Ma, 5V | 100 MHz | ||||||||||||||||||||||
![]() | HUF75333S3 | 0,6200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 66a (TC) | 10V | 16mohm @ 66a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 150W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus