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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | RFP8P05 | 1.0000 | ![]() | 1742 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 50 | P-Kanal | 50 v | 8a (TC) | 300mohm @ 8a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | - - - | ||||||||||||||||||
![]() | FQB85N06TM | 1.4200 | ![]() | 23 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 85a (TC) | 10V | 10MOHM @ 42.5A, 10V | 4v @ 250 ähm | 112 NC @ 10 V | ± 25 V | 4120 PF @ 25 V. | - - - | 3,75W (TA), 160 W (TC) | |||||||||||
![]() | KSB1116GTA | 0,0400 | ![]() | 2375 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,855 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 120 MHz | |||||||||||||||||
![]() | FQB17N08TM | 0,2100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 80 v | 16,5a (TC) | 10V | 115mohm @ 8.25a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 450 PF @ 25 V. | - - - | 3.13W (TA), 65W (TC) | |||||||||||||
![]() | FCPF20N60ST | - - - | ![]() | 1253 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | - - - | K. Loch | To-220-3 Full Pack | FCPF20 | MOSFET (Metalloxid) | To-220f | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 20A (TC) | - - - | - - - | - - - | - - - | ||||||||||||||
![]() | FQB10N20CTM | - - - | ![]() | 1549 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 200 v | 9,5a (TC) | 10V | 360MOHM @ 4.75a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||
![]() | FDU6644 | 1.4800 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-251-3 Stub Leads, ipak | MOSFET (Metalloxid) | To-251 (ipak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 204 | N-Kanal | 30 v | 67a (ta) | 4,5 V, 10 V. | 8.5Mohm @ 16a, 10V | 3v @ 250 ähm | 35 NC @ 5 V. | ± 16 v | 3087 PF @ 15 V | - - - | 1.6W (TA) | |||||||||||
![]() | Irfw520atm | 0,4000 | ![]() | 774 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 774 | N-Kanal | 100 v | 9.2a (TC) | 10V | 200mohm @ 4.6a, 10V | 4v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 480 PF @ 25 V. | - - - | 3,8 W (TA), 45W (TC) | |||||||||||
![]() | FQB9N08TM | 0,3100 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 80 v | 9,3a (TC) | 10V | 210mohm @ 4.65a, 10V | 4v @ 250 ähm | 7,7 NC @ 10 V | ± 25 V | 250 PF @ 25 V. | - - - | 3,75W (TA), 40W (TC) | |||||||||||||
![]() | NDS9959 | 0,4700 | ![]() | 7722 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | NDS995 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 50V | 2a | 300 MOHM @ 1,5A, 10V | 4v @ 250 ähm | 15nc @ 10v | 250pf @ 25v | - - - | ||||||||||||||
![]() | FDS6689s | 1.0100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 16a (ta) | 4,5 V, 10 V. | 5.4mohm @ 16a, 10V | 3V @ 1ma | 78 NC @ 10 V | ± 20 V | 3290 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||
![]() | FQD2P40TF | 0,4400 | ![]() | 9757 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 195 | P-Kanal | 400 V | 1,56a (TC) | 10V | 6,5 Ohm @ 780 mA, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 2,5 W (TA), 38W (TC) | |||||||||||||
![]() | FQAF90N08 | 2.3700 | ![]() | 340 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 80 v | 56a (TC) | 10V | 16mohm @ 28a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 25 V | 3250 PF @ 25 V. | - - - | 100 W (TC) | |||||||||||||
![]() | FQD3N60CTM | - - - | ![]() | 2545 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 2.4a (TC) | 10V | 3,4OHM @ 1,2a, 10 V. | 4v @ 250 ähm | 14 NC @ 10 V | ± 30 v | 565 PF @ 25 V. | - - - | 50W (TC) | |||||||||||
![]() | FCPF650N80Z | - - - | ![]() | 9256 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | FCPF650 | MOSFET (Metalloxid) | To-220f | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 800 V | 8a (TC) | 10V | 650Mohm @ 4a, 10V | 4,5 v Bei 800 ähm | 35 NC @ 10 V | ± 20 V | 1565 PF @ 100 V | - - - | 30,5 W (TC) | |||||||||||||
![]() | FDB6670AL | 1.0000 | ![]() | 91 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 80A (TA) | 4,5 V, 10 V. | 6,5 MOHM @ 40A, 10V | 3v @ 250 ähm | 33 NC @ 5 V. | ± 20 V | 2440 PF @ 15 V | - - - | 68W (TC) | |||||||||||||
![]() | Fqu2N60TU | 0,6700 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 600 V | 2a (TC) | 10V | 4.7ohm @ 1a, 10V | 5 V @ 250 ähm | 11 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | |||||||||||||
![]() | HUFA76633S3S | - - - | ![]() | 6617 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 383 | N-Kanal | 100 v | 39a (TC) | 4,5 V, 10 V. | 35mohm @ 39a, 10V | 3v @ 250 ähm | 67 NC @ 10 V | ± 16 v | 1820 PF @ 25 V. | - - - | 145W (TC) | |||||||||||||
![]() | FDMS3606As | 1.0900 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3606 | MOSFET (Metalloxid) | 1W | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 30V | 13a, 27a | 8mohm @ 13a, 10V | 2,7 V @ 250 ähm | 29nc @ 10v | 1695PF @ 15V | Logikpegel -tor | |||||||||||||||
![]() | BD435stu | - - - | ![]() | 3434 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 36 w | To-126-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 32 v | 4 a | 100 µA | Npn | 500mv @ 200 Ma, 2a | 50 @ 2a, 1V | 3MHz | |||||||||||||||
![]() | FDN304p | - - - | ![]() | 6522 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | SOT-23-3 | Herunterladen | 0000.00.0000 | 1 | P-Kanal | 20 v | 2.4a (TA) | 1,8 V, 4,5 V. | 52mohm @ 2,4a, 4,5 V. | 1,5 V @ 250 ähm | 20 NC @ 4,5 V. | ± 8 v | 1312 PF @ 10 V | - - - | 500 MW (TA) | |||||||||||||||
![]() | FDP7042L | 0,6600 | ![]() | 33 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 50a (ta) | 4,5 V, 10 V. | 7.5Mohm @ 25a, 10V | 2v @ 250 mA | 51 NC @ 4,5 V. | ± 12 V | 2418 PF @ 15 V | - - - | 83W (TA) | |||||||||||
![]() | FDMS038ZS | 0,2700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | |||||||||||||||||||||||||||
![]() | Fqi10n20ctu | 0,4100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 9,5a (TC) | 10V | 360MOHM @ 4.75a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||
![]() | KSH117TF | - - - | ![]() | 3635 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,75 w | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 100 v | 2 a | 20 µA | PNP - Darlington | 3v @ 40 mA, 4a | 1000 @ 2a, 3v | 25 MHz | |||||||||||||||
![]() | BC556CBU | - - - | ![]() | 6600 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 11.478 | 65 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 150 MHz | |||||||||||||||||
FDW2501NZ | - - - | ![]() | 8759 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 600 MW | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3 | 2 n-kanal (dual) | 20V | 5.5a | 18mohm @ 5,5a, 4,5 V. | 1,5 V @ 250 ähm | 17nc @ 4,5V | 1286PF @ 10V | Logikpegel -tor | |||||||||||||||
![]() | BC32725 | 0,0600 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||
![]() | FCP099N60E | - - - | ![]() | 4506 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 37a (TC) | 10V | 99mohm @ 18.5a, 10V | 3,5 V @ 250 ähm | 114 NC @ 10 V | ± 20 V | 3465 PF @ 380 V | - - - | 357W (TC) | ||||||||||||||
![]() | KSC2328AOTA | 0,0800 | ![]() | 2998 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Nicht für Designs | 150 ° C (TJ) | K. Loch | To-226-3, Bis 92-3 Langer Körper (Gebildete Leitungen) | 1 w | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 574 | 30 v | 2 a | 100NA (ICBO) | Npn | 2v @ 30 mA, 1,5a | 100 @ 500 mA, 2V | 120 MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus