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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | Fqpf4n60 | 0,7000 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 600 V | 2.6a (TC) | 10V | 2,2OHM @ 1,3a, 10 V | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 670 PF @ 25 V. | - - - | 36W (TC) | ||||||||||||||
![]() | HUF76145S3S | 1,9000 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 4,5 MOHM @ 75A, 10V | 3v @ 250 ähm | 156 NC @ 10 V | ± 20 V | 4900 PF @ 25 V. | - - - | 270W (TC) | ||||||||||||
![]() | FDMS8660As | 0,9500 | ![]() | 134 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 28a (TA), 49a (TC) | 4,5 V, 10 V. | 2,1 MOHM @ 28a, 10V | 3V @ 1ma | 83 NC @ 10 V | ± 20 V | 5865 PF @ 15 V | - - - | 2,5 W (TA), 104W (TC) | ||||||||||||||
![]() | FQP4N25 | 0,2700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 250 V | 3.6a (TC) | 10V | 1,75OHM @ 1,8a, 10V | 5 V @ 250 ähm | 5.6 NC @ 10 V | ± 30 v | 200 PF @ 25 V. | - - - | 52W (TC) | ||||||||||||||
![]() | FDMS8860As | 0,2900 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS8860 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | |||||||||||||||||||||||||
![]() | BC307BBU | - - - | ![]() | 6045 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 180 @ 2MA, 5V | 130 MHz | ||||||||||||||||||
![]() | SFW9520TM | 0,3000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 6a (TC) | 10V | 600mohm @ 3a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 550 PF @ 25 V. | - - - | 3,8 W (TA), 49W (TC) | ||||||||||||
![]() | KSC1507YTSTU | - - - | ![]() | 3507 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 15 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 50 | 300 V | 200 µA | 100 µA (ICBO) | Npn | 2v @ 5ma, 50 mA | 120 @ 10 mA, 10V | 80MHz | ||||||||||||||||||
![]() | FDS7088SN3 | 1.4100 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 21a (ta) | 4,5 V, 10 V. | 4mohm @ 21a, 10V | 3V @ 1ma | 80 nc @ 10 v | ± 20 V | 3230 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||
![]() | FDS6986s | 0,5000 | ![]() | 135 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 6,5a, 7,9a | 29MOHM @ 6,5A, 10V, 20MOHM @ 7,9a, 10 V. | 3v @ 250 µA, 3V @ 1ma | 9nc @ 5v, 16nc @ 5v | 695PF @ 10V, 1233pf @ 10v | Logikpegel -tor | |||||||||||||
![]() | FDD5670 | - - - | ![]() | 5823 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 52a (ta) | 6 V, 10V | 15mohm @ 10a, 10V | 4v @ 250 ähm | 73 NC @ 10 V | ± 20 V | 2739 PF @ 15 V | - - - | 3,8 W (TA), 83W (TC) | |||||||||||||||
![]() | FDB7030BLS | 1.8700 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 60a (ta) | 4,5 V, 10 V. | 9mohm @ 30a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 20 V | 1760 PF @ 15 V | - - - | 60 W (TC) | ||||||||||||
![]() | FDB8442-F085 | - - - | ![]() | 5463 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDB8442-F085-600039 | 1 | N-Kanal | 40 v | 28a (TA), 80A (TC) | 10V | 2,9 MOHM @ 80A, 10V | 4v @ 250 ähm | 235 NC @ 10 V | ± 20 V | 12200 PF @ 25 V. | - - - | 254W (TC) | ||||||||||||||
![]() | SFP9644 | 0,7100 | ![]() | 3327 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 322 | P-Kanal | 250 V | 8.6a (TC) | 10V | 800mohm @ 4.3a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 1565 PF @ 25 V. | - - - | 123W (TC) | ||||||||||||
![]() | 2SC4027T-n-tl-e | 0,2900 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-2SC4027T-N-TL-E-600039 | 1 | ||||||||||||||||||||||||||||||
![]() | FQB27N25TM | 1.3000 | ![]() | 16 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | FQB27 | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 800 | N-Kanal | 250 V | 25,5a (TC) | 10V | 131mohm @ 25.5a, 10V | 5 V @ 250 ähm | 49 NC @ 10 V. | ± 30 v | 1800 PF @ 25 V. | - - - | 417W (TJ) | |||||||||||
![]() | FDY4001CZ | 0,1000 | ![]() | 111 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | FDY40 | MOSFET (Metalloxid) | 446 MW | SOT-563F | Herunterladen | Nicht Anwendbar | Ear99 | 8541.21.0095 | 3.000 | N und p-kanal | 20V | 200 mA, 150 mA | 5OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 1,1NC @ 4,5V | 60pf @ 10v | Logikpegel -tor | |||||||||||||||
![]() | PZTA56 | - - - | ![]() | 7268 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1 w | SOT-223-4 | - - - | 2156-PZTA56 | 1 | 80 v | 500 mA | 100na | PNP | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 50 MHz | ||||||||||||||||||||
![]() | MMBT3904 | 1.0000 | ![]() | 9827 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT390 | 350 MW | SOT23-3 (to-236) | Herunterladen | Ear99 | 8541.21.0075 | 1 | 40 v | 200 ma | 50na | Npn | 300mv @ 5ma, 50 mA | 100 @ 10 Ma, 1V | 300 MHz | ||||||||||||||||||
![]() | Fdb13an06a0 | - - - | ![]() | 8081 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 60 v | 10.9a (TA), 62A (TC) | 6 V, 10V | 13,5 MOHM @ 62A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1350 PF @ 25 V. | - - - | 115W (TC) | ||||||||||||||||
![]() | FDC8886 | 0,2000 | ![]() | 184 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1.500 | N-Kanal | 30 v | 6,5a (TA), 8a (TC) | 4,5 V, 10 V. | 23mohm @ 6.5a, 10V | 3v @ 250 ähm | 7.4 NC @ 10 V | ± 20 V | 465 PF @ 15 V | - - - | 1.6W (TA) | |||||||||||||||
![]() | FDMS9408-F085 | - - - | ![]() | 9562 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS94 | MOSFET (Metalloxid) | Power56 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 80A (TC) | 10V | 1,8 MOHM @ 80A, 10V | 4v @ 250 ähm | 92 NC @ 10 V | ± 20 V | 5120 PF @ 25 V. | - - - | 214W (TJ) | |||||||||||
![]() | SFR2955TF | 0,2500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 60 v | 7.6a (TC) | 10V | 300 MOHM @ 3,8a, 10 V. | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 600 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | ||||||||||||
![]() | MPSL51 | 0,0400 | ![]() | 6686 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 446 | 100 v | 200 ma | 1 µA (ICBO) | PNP | 300mv @ 5ma, 50 mA | 40 @ 50 Ma, 5V | 60 MHz | ||||||||||||||||||
![]() | PN2907TFR | 1.0000 | ![]() | 2187 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 40 v | 800 mA | 20na (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | - - - | ||||||||||||||||||
![]() | HUF76009P3 | 0,5300 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 20 v | 20A (TC) | 5v, 10V | 27mohm @ 20a, 10V | 3v @ 250 ähm | 13 NC @ 10 V | ± 20 V | 470 PF @ 20 V | - - - | 41W (TC) | ||||||||||||
![]() | KSB1116SYTA | 0,0500 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | ||||||||||||||||||
![]() | HUFA75339P3 | 1.1600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 12mohm @ 75a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | ||||||||||||||
![]() | Fqu4n25tu | 0,4600 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 250 V | 3a (TC) | 10V | 1,75OHM @ 1,5A, 10 V. | 5 V @ 250 ähm | 5.6 NC @ 10 V | ± 30 v | 200 PF @ 25 V. | - - - | 2,5 W (TA), 37W (TC) | ||||||||||||||
![]() | KSP45TA | - - - | ![]() | 9895 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 350 V | 300 ma | 500NA | Npn | 750 mv @ 5ma, 50 mA | 50 @ 10 ma, 10V | - - - |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus