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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDP032N08 | - - - | ![]() | 9849 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDP032N08-600039 | 1 | N-Kanal | 75 V | 120a (TC) | 10V | 3,2 MOHM @ 75A, 10V | 4,5 V @ 250 ähm | 220 NC @ 10 V | ± 20 V | 15160 PF @ 25 V. | - - - | 375W (TC) | ||||||||||||||
![]() | Fdb14an06la0 | 1.0000 | ![]() | 7597 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 10A (TA), 67A (TC) | 5v, 10V | 11.6mohm @ 67a, 10V | 3v @ 250 ähm | 31 NC @ 5 V. | ± 20 V | 2900 PF @ 25 V. | - - - | 125W (TC) | ||||||||||||||
![]() | HUF75542S3S | 1.5900 | ![]() | 400 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 80 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 180 NC @ 20 V. | ± 20 V | 2750 PF @ 25 V. | - - - | 230W (TC) | ||||||||||||
![]() | FDB8453LZ | 0,6700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 40 v | 16.1a (TA), 50A (TC) | 4,5 V, 10 V. | 7mohm @ 17.6a, 10V | 3v @ 250 ähm | 66 NC @ 10 V | ± 20 V | 3545 PF @ 20 V | - - - | 3.1W (TA), 66W (TC) | ||||||||||||||
![]() | FQD5N50TF | 0,5100 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 500 V | 3,5a (TC) | 10V | 1,8OHM @ 1,75a, 10 V. | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 610 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||
![]() | FDS6673Az | 1.2600 | ![]() | 7443 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 173 | P-Kanal | 30 v | 14,5a (ta) | 4,5 V, 10 V. | 7,2 MOHM @ 14,5a, 10V | 3v @ 250 ähm | 118 NC @ 10 V | ± 25 V | 4480 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||
![]() | HUF75939P3 | 1.0100 | ![]() | 35 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 200 v | 22a (TC) | 10V | 125mohm @ 22a, 10V | 4v @ 250 ähm | 152 NC @ 20 V | ± 20 V | 2200 PF @ 25 V. | - - - | 180W (TC) | ||||||||||||||
![]() | HUF75321S3ST | 0,3400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 55 v | 35a (TC) | 10V | 34mohm @ 35a, 10V | 4v @ 250 ähm | 44 NC @ 20 V | ± 20 V | 680 PF @ 25 V. | - - - | 93W (TC) | ||||||||||||
![]() | HUF76432S3ST | 0,9300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 59a (TC) | 4,5 V, 10 V. | 17mohm @ 59a, 10V | 3v @ 250 ähm | 53 NC @ 10 V | ± 16 v | 1765 PF @ 25 V. | - - - | 130W (TC) | ||||||||||||
![]() | BD681Stu | - - - | ![]() | 9620 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | BD681 | 40 w | To-126-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 100 v | 4 a | 500 ähm | NPN - Darlington | 2,5 V @ 30 Ma, 1,5a | 750 @ 1,5a, 3V | - - - | |||||||||||||||
![]() | Si4822dy | 0,4300 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 701 | N-Kanal | 30 v | 12,5a (TA) | 4,5 V, 10 V. | 9,5 MOHM @ 12,5A, 10V | 3v @ 250 ähm | 33 NC @ 5 V. | ± 20 V | 2180 PF @ 15 V | - - - | 1W (TA) | ||||||||||||
![]() | Fqpf7n20 | 0,3100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 200 v | 4.8a (TC) | 10V | 690MOHM @ 2,4a, 10V | 5 V @ 250 ähm | 10 nc @ 10 v | ± 30 v | 400 PF @ 25 V. | - - - | 37W (TC) | ||||||||||||||
![]() | FDMS0355s | 0,2700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6), Power56 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 18A (TA), 22A (TC) | 4,5 V, 10 V. | 5mohm @ 18a, 10V | 3V @ 1ma | 31 NC @ 10 V | ± 20 V | 1815 PF @ 15 V | - - - | 2,5 W (TA), 36W (TC) | |||||||||||||||
![]() | FDMC0223 | 0,1700 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | ||||||||||||||||||||||||||||
![]() | FDS6299s | 1.8500 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 30 v | 21a (ta) | 4,5 V, 10 V. | 3,9 MOHM @ 21A, 10V | 3V @ 1ma | 81 NC @ 10 V | ± 20 V | 3880 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||
![]() | FDMC7680 | 0,6100 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 492 | N-Kanal | 30 v | 14,8a (ta) | 4,5 V, 10 V. | 7.2mohm @ 14.8a, 10V | 3v @ 250 ähm | 42 NC @ 10 V. | ± 20 V | 2855 PF @ 15 V | - - - | 2,3 W (TA), 31W (TC) | |||||||||||||||
![]() | FCH35N60 | 3.6600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Supermos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 35a (TC) | 10V | 98mohm @ 17.5a, 10V | 5 V @ 250 ähm | 181 NC @ 10 V. | ± 30 v | 6640 PF @ 25 V. | - - - | 312.5W (TC) | |||||||||||||||
![]() | KSB1151YSTSTU | 0,2900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSB11 | 1,3 w | To-126-3 | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | 60 v | 5 a | 10 µA (ICBO) | PNP | 300mv @ 200 Ma, 2a | 160 @ 2a, 1V | - - - | |||||||||||||||
![]() | FMBA14 | 0,1900 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | Fmba1 | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8541.21.0095 | 1.750 | 30V | 1.2a | 100NA (ICBO) | 2 NPN (Dual) | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 1,25 MHz | ||||||||||||||||||
![]() | Fqpf20n06 | 0,5900 | ![]() | 5013 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | Fqpf20 | MOSFET (Metalloxid) | To-220f | Herunterladen | Ear99 | 8542.39.0001 | 175 | N-Kanal | 60 v | 15a (TC) | 10V | 60MOHM @ 7,5a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 590 PF @ 25 V. | - - - | 30W (TC) | ||||||||||||||
![]() | IRFS750A | 2.0400 | ![]() | 269 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 8.4a (TC) | 10V | 300mohm @ 4.2a, 10 V. | 4v @ 250 ähm | 131 NC @ 10 V | ± 30 v | 2780 PF @ 25 V. | - - - | 49W (TC) | ||||||||||||||
![]() | SFR9220TM | 1.0000 | ![]() | 3228 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 200 v | 3.1a (TC) | 10V | 1,5OHM @ 1,6a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 540 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | ||||||||||||
![]() | FDAF69N25 | 2.4400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 250 V | 34a (TC) | 10V | 41mohm @ 17a, 10V | 5 V @ 250 ähm | 100 nc @ 10 v | ± 30 v | 4640 PF @ 25 V. | - - - | 115W (TC) | ||||||||||||||
![]() | FDP023N08B | 2.1300 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDP023 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||
![]() | FQP70N08 | 1.1200 | ![]() | 797 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 70a (TC) | 10V | 17mohm @ 35a, 10V | 4v @ 250 ähm | 98 NC @ 10 V. | ± 25 V | 2700 PF @ 25 V. | - - - | 155W (TC) | ||||||||||||||
![]() | KSD1273qydtu | 0,2800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | 2 w | To-220F-3 (Y-Forming) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 50 | 60 v | 3 a | 100 µA | Npn | 1v @ 50 Ma, 2a | 500 @ 500 mA, 4V | 30 MHz | ||||||||||||||||||
![]() | FDU6696 | 0,9100 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 13a (ta), 50a (TC) | 4,5 V, 10 V. | 8mohm @ 13a, 10V | 3v @ 250 ähm | 24 nc @ 5 v | ± 16 v | 1715 PF @ 15 V | - - - | 1,6W (TA), 52W (TC) | ||||||||||||
FDW2506P | 0,6400 | ![]() | 180 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 600 MW | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 p-kanal (dual) | 20V | 5.3a | 22mohm @ 5,3a, 4,5 V. | 1,5 V @ 250 ähm | 34nc @ 4,5V | 1015PF @ 10V | Logikpegel -tor | ||||||||||||||||
![]() | NDP7050 | 2.4000 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 50 v | 75a (TC) | 10V | 13mohm @ 40a, 10V | 4v @ 250 ähm | 115 NC @ 10 V | ± 20 V | 3600 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||
![]() | Fdpf18n20ft-g | 0,7100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 200 v | 18a (TC) | 10V | 140MOHM @ 9A, 10V | 5 V @ 250 ähm | 26 NC @ 10 V | ± 30 v | 1180 PF @ 25 V. | - - - | 35W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
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