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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) |
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![]() | HUF75842S3 | 1,5000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF75842 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | ||||||||||||||||||
![]() | FCH190N65F-F155 | 3.3400 | ![]() | 4300 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247-3 | Herunterladen | Ear99 | 8542.39.0001 | 66 | N-Kanal | 650 V | 20,6a (TC) | 10V | 190mohm @ 10a, 10V | 5v @ 2MA | 78 NC @ 10 V | ± 20 V | 3225 PF @ 100 V | - - - | 208W (TC) | ||||||||
![]() | FDS6986As | 0,4100 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 728 | 2 n-kanal (dual) | 30V | 6,5a, 7,9a | 29mohm @ 6.5a, 10V | 3v @ 250 ähm | 17nc @ 10v | 720PF @ 10V | Logikpegel -tor | |||||||||
![]() | HUFA76407D3S | 0,2300 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||
![]() | SFH9140 | 0,6600 | ![]() | 2935 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 388 | P-Kanal | 100 v | 19A (TC) | 10V | 200mohm @ 9.5a, 10V | 4v @ 250 ähm | 54 NC @ 10 V | ± 20 V | 1535 PF @ 25 V. | - - - | 166W (TC) | |||||
![]() | FQB32N12V2TM | 1.1400 | ![]() | 51 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 120 v | 32a (TC) | 10V | 50mohm @ 16a, 10V | 4v @ 250 ähm | 53 NC @ 10 V | ± 30 v | 1860 PF @ 25 V. | - - - | 3,75W (TA), 150W (TC) | |||||||
![]() | NDB4060L | 1.0000 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 15a (TC) | 5v, 10V | 80MOHM @ 15a, 10V | 2v @ 250 ähm | 17 NC @ 5 V | ± 16 v | 600 PF @ 25 V. | - - - | 50W (TC) | |||||||
![]() | HUF75329S3 | 0,3300 | ![]() | 1516 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 49a (TC) | 10V | 24MOHM @ 49A, 10V | 4v @ 250 ähm | 75 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||
![]() | HUFA76407P3 | 0,3300 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 13a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||
![]() | FDMS8020 | 1.0000 | ![]() | 6840 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 26a (TA), 42A (TC) | 4,5 V, 10 V. | 2,5 MOHM @ 26A, 10V | 3v @ 250 ähm | 61 NC @ 10 V | ± 20 V | 3800 PF @ 15 V | - - - | 2,5 W (TA), 65 W (TC) | ||||||||
![]() | HUF7533333p3 | 0,8200 | ![]() | 139 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 66a (TC) | 10V | 16mohm @ 66a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 150W (TC) | |||||||
![]() | FQD3N60TF | 0,5700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 600 V | 2.4a (TC) | 10V | 3,6OHM @ 1,2a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 450 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||
![]() | FQP17N08 | 0,3100 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 16,5a (TC) | 10V | 115mohm @ 8.25a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 450 PF @ 25 V. | - - - | 65W (TC) | |||||||
![]() | FQP5N60C | 0,7200 | ![]() | 74 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 417 | N-Kanal | 600 V | 4,5a (TC) | 10V | 2,5OHM @ 2,25a, 10 V. | 4v @ 250 ähm | 19 NC @ 10 V | ± 30 v | 670 PF @ 25 V. | - - - | 100 W (TC) | ||||||||
![]() | FDD20AN06A0-F085 | - - - | ![]() | 2385 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252aa | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDD20AN06A0-F085-600039 | 1 | N-Kanal | 60 v | 8A (TA), 45A (TC) | 10V | 20mohm @ 45a, 10V | 4v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 950 PF @ 25 V. | - - - | 90W (TC) | |||||||
![]() | FQA24N50 | - - - | ![]() | 9456 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | FQA2 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 500 V | 24a (TC) | 10V | 200mohm @ 12a, 10V | 5 V @ 250 ähm | 120 nc @ 10 v | ± 30 v | 4500 PF @ 25 V. | - - - | 290W (TC) | ||||
![]() | HUFA76609D3ST | 0,4300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) | |||||||
![]() | RF1S70N06SM | 2.2500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | PSPICE® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 70a (TC) | 10V | 14mohm @ 70a, 10V | 4v @ 250 ähm | 215 NC @ 20 V | ± 20 V | 3000 PF @ 25 V. | - - - | 150W (TC) | |||||
![]() | FDU7030BL | 0,6400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 30 v | 14A (TA), 56a (TC) | 4,5 V, 10 V. | 9,5 MOHM @ 14A, 10V | 3v @ 250 ähm | 20 NC @ 5 V | ± 20 V | 1425 PF @ 15 V | - - - | 2,8 W (TA), 60 W (TC) | |||||||
![]() | FDB42AN15A0 | 1.0000 | ![]() | 1899 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 150 v | 5A (TA), 35A (TC) | 6 V, 10V | 42mohm @ 12a, 10V | 4v @ 250 ähm | 39 NC @ 10 V. | ± 20 V | 2150 PF @ 25 V. | - - - | 150W (TC) | |||||||
![]() | SSR2N60B | 0,3900 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 600 V | 1,8a (TC) | 10V | 5ohm @ 900 mA, 10V | 4v @ 250 ähm | 17 NC @ 10 V | ± 30 v | 490 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | |||||
![]() | FDS6984s | 1.3800 | ![]() | 115 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 5,5a, 8,5a | 19Mohm @ 8.5a, 10V | 3v @ 250 ähm | 12nc @ 5v | 1233pf @ 15V | Logikpegel -tor | ||||||||
![]() | SSU1N60BTU | 0,1400 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 900 Ma (TC) | 10V | 12ohm @ 450 mA, 10V | 4v @ 250 ähm | 7,7 NC @ 10 V | ± 30 v | 215 PF @ 25 V. | - - - | 2,5 W (TA), 28 W (TC) | |||||
![]() | FDC6308p | 0,5300 | ![]() | 28 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6308 | - - - | 700 MW (TA) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 1.7a (ta) | 180 MOHM @ 1,7A, 4,5 V. | 1,5 V @ 250 ähm | 5nc @ 4,5 v | 265PF @ 10V | - - - | ||||||
![]() | FDPF041N06BL1 | 1.1500 | ![]() | 755 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 283 | N-Kanal | 60 v | 77a (TC) | 10V | 4.1MOHM @ 77A, 10V | 4v @ 250 ähm | 69 NC @ 10 V | ± 20 V | 5690 PF @ 30 V | - - - | 44.1W (TC) | ||||||||
![]() | Fqpf3n40 | 0,4400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 1,6a (TC) | 10V | 3.4ohm @ 800 mA, 10 V. | 5 V @ 250 ähm | 7,5 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 20W (TC) | |||||||
![]() | FQD6N40TM | 1.0000 | ![]() | 4740 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 400 V | 4.2a (TC) | 10V | 1,15OHM @ 2,1a, 10 V. | 5 V @ 250 ähm | 17 NC @ 10 V | ± 30 v | 620 PF @ 25 V. | - - - | 2,5 W (TA), 50 W (TC) | |||||||
![]() | FQP5N80 | 1.0000 | ![]() | 9416 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 800 V | 4.8a (TC) | 10V | 2,6OHM @ 2,4a, 10 V. | 5 V @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1250 PF @ 25 V. | - - - | 140W (TC) | |||||||
![]() | Fqpf11n50cf | 1.5600 | ![]() | 985 | 0.00000000 | Fairchild Semiconductor | FRFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 193 | N-Kanal | 500 V | 11a (TC) | 10V | 550MOHM @ 5.5A, 10V | 4v @ 250 ähm | 55 NC @ 10 V | ± 30 v | 2055 PF @ 25 V. | - - - | 48W (TC) | ||||||||
![]() | HUF76609D3S | 0,3900 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 100 v | 10a (TC) | 4,5 V, 10 V. | 160 Mohm @ 10a, 10V | 3v @ 250 ähm | 16 NC @ 10 V | ± 16 v | 425 PF @ 25 V. | - - - | 49W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus