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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | TN6726a | 0,1000 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.000 | 30 v | 1,5 a | 100NA (ICBO) | PNP | 500mv @ 100 mA, 1a | 60 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||
![]() | KSB1116YBU | 1.0000 | ![]() | 6782 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 10.000 | 50 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 135 @ 100 mA, 2V | 120 MHz | ||||||||||||||||||||||||||
![]() | KSC838COBU | 0,0300 | ![]() | 4448 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 9.745 | 30 v | 30 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 70 @ 2MA, 12V | 250 MHz | ||||||||||||||||||||||||||
![]() | FGA40S65SH | - - - | ![]() | 9300 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 268 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 40a, 6OHM, 15 V. | TRABENFELD STOPP | 650 V | 80 a | 120 a | 1,81v @ 15V, 40a | 194 µJ (Ein), 388 µj (AUS) | 73 NC | 19,2ns/68.8ns | ||||||||||||||||||||||||
![]() | FQB55N06TM | 0,8800 | ![]() | 696 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 55a (TC) | 10V | 20mohm @ 27.5a, 10V | 4v @ 250 ähm | 46 NC @ 10 V | ± 25 V | 1690 PF @ 25 V. | - - - | 3,75W (TA), 133W (TC) | ||||||||||||||||||||||
![]() | BC547CBU | 0,0400 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 8,266 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||
FDW2508p | 0,5300 | ![]() | 304 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 p-kanal (dual) | 12V | 6a | 18mohm @ 6a, 4,5 V. | 1,5 V @ 250 ähm | 36nc @ 4,5V | 2644pf @ 6v | Logikpegel -tor | ||||||||||||||||||||||||
![]() | FDMS0310As | - - - | ![]() | 7155 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-FDMS0310AS-600039 | 1 | N-Kanal | 30 v | 19A (TA), 22A (TC) | 4,5 V, 10 V. | 4,3 MOHM @ 19A, 10V | 3V @ 1ma | 37 NC @ 10 V. | ± 20 V | 2280 PF @ 15 V | - - - | 2,5 W (TA), 41W (TC) | ||||||||||||||||||||||
![]() | 5HP01M-tl-e | - - - | ![]() | 8837 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C. | Oberflächenhalterung | SC-70, SOT-323 | MOSFET (Metalloxid) | 3-MCP | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-5HP01M-TL-E-600039 | 1 | P-Kanal | 50 v | 70 mA (TA) | 4 V, 10V | 22ohm @ 40 mA, 10V | 2,5 V @ 100 µA | 1,32 NC @ 10 V. | ± 20 V | 6.2 PF @ 10 V | - - - | 150 MW (TA) | ||||||||||||||||||||||
![]() | FDS4080N7 | 1.5500 | ![]() | 11 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 13a (ta) | 10V | 10mohm @ 13a, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1750 PF @ 20 V | - - - | 3.9W (TA) | ||||||||||||||||||||||
![]() | FDMC7660S | 0,6100 | ![]() | 9 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power33 | Herunterladen | Ear99 | 8541.29.0095 | 491 | N-Kanal | 30 v | 20A (TA), 40A (TC) | 4,5 V, 10 V. | 2,2 MOHM @ 20A, 10V | 2,5 V @ 1ma | 66 NC @ 10 V | ± 20 V | 4325 PF @ 15 V | - - - | 2,3 W (TA), 41W (TC) | |||||||||||||||||||||||
![]() | FDC699p | 0,5500 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-SSOT Flat-Lead, Supersot ™ -6 FLMP | MOSFET (Metalloxid) | Supersot ™ -6 FLMP | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 3.000 | P-Kanal | 20 v | 7a (ta) | 2,5 V, 4,5 V. | 22mohm @ 7a, 4,5 V. | 1,5 V @ 250 ähm | 38 NC @ 5 V. | ± 12 V | 2640 PF @ 10 V. | - - - | 2W (TA) | ||||||||||||||||||||||
![]() | HUF75637S3S | - - - | ![]() | 5354 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 100 v | 44a (TC) | 10V | 30mohm @ 44a, 10V | 4v @ 250 ähm | 108 NC @ 20 V | ± 20 V | 1700 PF @ 25 V. | - - - | 155W (TC) | ||||||||||||||||||||||
![]() | TIP111TU | 1.0000 | ![]() | 7369 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 80 v | 2 a | 2ma | NPN - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | |||||||||||||||||||||||||||
![]() | FDS6690A-NBNP006 | 0,2500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-FDS6690A-NBNP006-600039 | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||
![]() | FDMS0306S | 0,2400 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | FDMS03 | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||
![]() | FDMS86104 | - - - | ![]() | 4847 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power56 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDMS86104 | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 7a (ta), 16a (TC) | 6 V, 10V | 24MOHM @ 7a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 20 V | 923 PF @ 50 V | - - - | 2,5 W (TA), 73W (TC) | ||||||||||||||||||||
![]() | FQP3N50CTF | 0,3700 | ![]() | 1431 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Fqp3n | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 724 | - - - | |||||||||||||||||||||||||||||||||||
![]() | BC557BBU | - - - | ![]() | 1153 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 45 V | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||||||
![]() | NDP5060 | 0,5200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Herunterladen | Verkäfer undefiniert | Verkäfer undefiniert | 2156P5060-600039 | 1 | ||||||||||||||||||||||||||||||||||||||
![]() | HGTP7N60A4_NL | 0,6000 | ![]() | 511 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | Standard | 125 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 511 | 390 V, 7a, 25 Ohm, 15 V | - - - | 600 V | 34 a | 56 a | 2,7 V @ 15V, 7a | 55 µJ (EIN), 60 µJ (AUS) | 37 NC | 11ns/100 ns | |||||||||||||||||||||
![]() | FDA15N65 | 2.2600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 650 V | 16a (TC) | 10V | 440Mohm @ 8a, 10V | 5 V @ 250 ähm | 63 NC @ 10 V | ± 30 v | 3095 PF @ 25 V. | - - - | 260W (TC) | ||||||||||||||||||||||
![]() | IRFW610BTM | 1.0000 | ![]() | 5820 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 3.3a (TC) | 10V | 1,5OHM @ 1,65A, 10V | 4v @ 250 ähm | 9.3 NC @ 10 V | ± 30 v | 225 PF @ 25 V. | - - - | 3.13W (TA), 38W (TC) | ||||||||||||||||||||
![]() | HUF76129S3ST | - - - | ![]() | 9570 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 641 | N-Kanal | 30 v | 56a (TC) | 4,5 V, 10 V. | 16ohm @ 56a, 10V | 3v @ 250 ähm | 45 nc @ 10 v | ± 20 V | 1350 PF @ 25 V. | - - - | 105W (TC) | ||||||||||||||||||||
![]() | HUF75925p3 | 0,7700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 11a (TC) | 10V | 275mohm @ 11a, 10V | 4v @ 250 ähm | 78 NC @ 20 V | ± 20 V | 1030 PF @ 25 V. | - - - | 100 W (TC) | ||||||||||||||||||||
![]() | Fqu10n20TU | 0,4600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 200 v | 7.6a (TC) | 10V | 360 MOHM @ 3,8a, 10V | 5 V @ 250 ähm | 18 NC @ 10 V. | ± 30 v | 670 PF @ 25 V. | - - - | 2,5 W (TA), 51W (TC) | ||||||||||||||||||||||
![]() | HUFA76407D3ST | 0,4600 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||||||
![]() | FQD6N60CTF | - - - | ![]() | 5291 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 600 V | 4a (TC) | 10V | 2OHM @ 2a, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 810 PF @ 25 V. | - - - | 80W (TC) | ||||||||||||||||||||
![]() | FDMA910PZ | 1.0000 | ![]() | 7442 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 20 v | 9,4a (TA) | 1,8 V, 4,5 V. | 20mohm @ 9.4a, 4,5 V. | 1,5 V @ 250 ähm | 29 NC @ 4,5 V. | ± 8 v | 2805 PF @ 10 V | - - - | 2.4W (TA) | |||||||||||||||||||||||
![]() | FQB20N06TM | 0,3700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 20A (TC) | 10V | 60MOHM @ 10a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 590 PF @ 25 V. | - - - | 3,75W (TA), 53W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus