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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | FET -Typ | Testedingung | Gewinnen | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) | RAUSCHFIGUR (DB Typ @ f) |
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![]() | FDS6690 | 1.0900 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 13,5 MOHM @ 10a, 10V | 3v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 1340 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||
![]() | ISL9V2040S3ST | 1.1700 | ![]() | 82 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 130 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 1kohm, 5V | - - - | 430 v | 10 a | 1,9 V @ 4V, 6a | - - - | 12 NC | -/3,64 µs | |||||||||||||||||||||||||||||
![]() | FGA50N100BNTtu | 2.6000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 156 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 600 V, 60A, 10OHM, 15 V. | Npt und griffen | 1000 v | 50 a | 200 a | 2,9 V @ 15V, 60a | - - - | 257 NC | 34ns/243ns | |||||||||||||||||||||||||||
![]() | HUF76629D3ST_NL | - - - | ![]() | 7064 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 86 | N-Kanal | 100 v | 20A (TC) | 4,5 V, 10 V. | 52mohm @ 20a, 10V | 3v @ 250 ähm | 43 NC @ 10 V | ± 16 v | 1285 PF @ 25 V. | - - - | 150W (TJ) | ||||||||||||||||||||||||
![]() | HUFA75344S3S | 0,9400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | ||||||||||||||||||||||||||
![]() | FDP6676 | 0,9800 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 84a (ta) | 4,5 V, 10 V. | 6mohm @ 42a, 10V | 3v @ 250 ähm | 60 NC @ 5 V | ± 16 v | 5324 PF @ 15 V | - - - | 93W (TC) | ||||||||||||||||||||||||
![]() | FDR840p | 0,8100 | ![]() | 255 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | MOSFET (Metalloxid) | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 10a (ta) | 2,5 V, 4,5 V. | 12mohm @ 10a, 4,5 V. | 1,5 V @ 250 ähm | 60 NC @ 4,5 V. | ± 12 V | 4481 PF @ 10 V | - - - | 1,8W (TA) | ||||||||||||||||||||||||||
![]() | 2n3859a | 1.0000 | ![]() | 5026 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1 | 60 v | 500 mA | 500NA (ICBO) | Npn | - - - | 100 @ 1ma, 1V | 250 MHz | ||||||||||||||||||||||||||||||
![]() | KSA1015GRA | 0,0300 | ![]() | 43 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 200 @ 2ma, 6v | 80MHz | ||||||||||||||||||||||||||||
![]() | KSE13003th1ATU | 0,4100 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 20 w | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V | 1,5 a | - - - | Npn | 3v @ 500 mA, 1,5a | 9 @ 500 mA, 2V | 4MHz | |||||||||||||||||||||||||||||||
![]() | KSB772YSTU | 0,1900 | ![]() | 814 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1 w | To-126-3 | Herunterladen | Ear99 | 8541.29.0095 | 1,576 | 30 v | 3 a | 1 µA (ICBO) | PNP | 500mv @ 200 Ma, 2a | 160 @ 1a, 2v | 80MHz | |||||||||||||||||||||||||||||||
![]() | RFP45N06_NL | - - - | ![]() | 4001 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 45a (TC) | 10V | 28mohm @ 45a, 10V | 4v @ 250 ähm | 150 NC @ 20 V | ± 20 V | 2050 PF @ 25 V. | - - - | 131W (TC) | ||||||||||||||||||||||||
![]() | BC33725TF | 0,0400 | ![]() | 9351 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.251 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||||
![]() | FJN3305RTA | 1.0000 | ![]() | 2055 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | Fjn330 | 300 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 4.7 Kohms | 10 Kohms | ||||||||||||||||||||||||||
![]() | BCX20 | 0,0300 | ![]() | 6279 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 9.000 | 25 v | 800 mA | 100NA (ICBO) | Npn | 620 MV @ 50 Ma, 500 mA | 100 @ 100 mA, 1V | - - - | ||||||||||||||||||||||||||||||
![]() | Fqpf6n40c | 0,5900 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 400 V | 6a (TC) | 10V | 1ohm @ 3a, 10 V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 625 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||||||||||
![]() | IRF630BTSTU | - - - | ![]() | 1443 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | Irf630 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||
![]() | FQP6N70 | 1.0000 | ![]() | 6399 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | FQP6 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 700 V | 6.2a (TC) | 10V | 1,5OHM @ 3,1a, 10 V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 30 v | 1400 PF @ 25 V. | - - - | 142W (TC) | |||||||||||||||||||||||
![]() | FDP75N08 | 1.0400 | ![]() | 365 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 75 V | 75a (TC) | 10V | 11mohm @ 37,5a, 10V | 4v @ 250 ähm | 104 NC @ 10 V | ± 20 V | 4468 PF @ 25 V. | - - - | 131W (TC) | ||||||||||||||||||||||||||
![]() | MJD31CITU | 0,2000 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MJD31 | 1,56 w | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1.480 | 100 v | 3 a | 50 µA | Npn | 1,2 V @ 375 Ma, 3a | 10 @ 3a, 4V | 3MHz | |||||||||||||||||||||||||||
![]() | FCU5N60TU | - - - | ![]() | 9408 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | FCU5N60 | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 600 V | 4.6a (TC) | 10V | 950MOHM @ 2,3a, 10V | 5 V @ 250 ähm | 16 NC @ 10 V | ± 30 v | 600 PF @ 25 V. | - - - | 54W (TC) | |||||||||||||||||||||||
![]() | BCW33 | 0,0200 | ![]() | 18 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 18.000 | 32 v | 500 mA | 100NA (ICBO) | Npn | 250 mV @ 500 µA, 10 mA | 420 @ 2MA, 5V | 200 MHz | ||||||||||||||||||||||||||||||
![]() | KSC1674CYBU | 0,0200 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 15.000 | - - - | 20V | 20 ma | Npn | 120 @ 1ma, 6v | 600 MHz | 3db ~ 5 dB @ 100MHz | ||||||||||||||||||||||||||||||
![]() | BC549B | 0,0400 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||||||
![]() | FGL40N150Dtu | - - - | ![]() | 3389 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | Standard | 200 w | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2 | - - - | 170 ns | - - - | 1500 V | 40 a | 120 a | 4,5 V @ 15V, 40a | - - - | 170 nc | - - - | |||||||||||||||||||||||||
![]() | FDS4070N7 | 1.6200 | ![]() | 71 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 15.3a (ta) | 10V | 7mohm @ 15.3a, 10V | 5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2819 PF @ 20 V | - - - | 3W (TA) | ||||||||||||||||||||||||||
![]() | KSA992FBTA | 0,0500 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | - - - | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-kSA992FBTA-600039 | 7,158 | 120 v | 50 ma | 1 µA | PNP | 300 mV @ 1ma, 10 mA | 430 @ 1ma, 6v | 100 MHz | ||||||||||||||||||||||||||||||
![]() | KSC945GBU | 0,0600 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.000 | 50 v | 150 Ma | 100NA (ICBO) | Npn | 300mv @ 10 mA, 100 mA | 200 @ 1ma, 6v | 300 MHz | ||||||||||||||||||||||||||||||
![]() | BCW66G | - - - | ![]() | 7087 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 1 a | 20na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||
![]() | KSC2223omtf | 0,0200 | ![]() | 9984 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 150 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1.101 | 20 v | 20 ma | 100NA (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 60 @ 1ma, 6v | 600 MHz |
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