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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket FET -Typ Testedingung Gewinnen ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Strom - Sammler Cutoff (max) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang RAUSCHFIGUR (DB Typ @ f)
FQPF3N50C Fairchild Semiconductor Fqpf3n50c 0,7000
RFQ
 ECAD 20 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 N-Kanal 500 V 3a (TC) 10V 2,5 Ohm bei 1,5a, 10 V 4v @ 250 ähm 13 NC @ 10 V ± 30 v 365 PF @ 25 V. - - - 25W (TC)
FDMC8878 Fairchild Semiconductor FDMC8878 - - -
RFQ
 ECAD 8504 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powerwdfn FDMC88 MOSFET (Metalloxid) 8-MLP (3,3x3,3) Herunterladen 0000.00.0000 1 N-Kanal 30 v 9,6a (TA), 16,5a (TC) 4,5 V, 10 V. 14mohm @ 9.6a, 10V 3v @ 250 ähm 26 NC @ 10 V ± 20 V 1230 PF @ 15 V - - - 2.1W (TA), 31W (TC)
FDD5690 Fairchild Semiconductor FDD5690 1.0000
RFQ
 ECAD 9120 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Ear99 8542.39.0001 1 N-Kanal 60 v 30a (TC) 6 V, 10V 27mohm @ 9a, 10V 4v @ 250 ähm 32 NC @ 10 V ± 20 V 1110 PF @ 25 V - - - 3.2W (TA), 50W (TC)
BCX20 Fairchild Semiconductor BCX20 0,0300
RFQ
 ECAD 6279 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 310 MW SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 9.000 25 v 800 mA 100NA (ICBO) Npn 620 MV @ 50 Ma, 500 mA 100 @ 100 mA, 1V - - -
FQAF14N30 Fairchild Semiconductor FQAF14N30 1.0400
RFQ
 ECAD 310 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3 Full Pack MOSFET (Metalloxid) To-3Pf Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 310 N-Kanal 300 V 11.4a (TC) 10V 290MOHM @ 5.7A, 10V 5 V @ 250 ähm 40 nc @ 10 v ± 30 v 1360 PF @ 25 V. - - - 90W (TC)
FDS6609A Fairchild Semiconductor FDS6609a 1.1200
RFQ
 ECAD 9304 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 185 P-Kanal 30 v 6.3a (ta) 4,5 V, 10 V. 32mohm @ 7a, 10V 3v @ 250 ähm 29 NC @ 10 V ± 20 V 930 PF @ 15 V - - - 2,5 W (TA)
IRFI624BTUFP001 Fairchild Semiconductor IRFI624BTUFP001 0,1400
RFQ
 ECAD 9856 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen Nicht Anwendbar 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 2.000 N-Kanal 250 V 4.1a (TC) 10V 1,1OHM @ 2,05A, 10V 4v @ 250 ähm 18 NC @ 10 V. ± 30 v 450 PF @ 25 V. - - - 3.13W (TA), 49W (TC)
FQPF13N06 Fairchild Semiconductor Fqpf13n06 0,3100
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 60 v 9,4a (TC) 10V 135mohm @ 4.7a, 10V 4v @ 250 ähm 7,5 NC @ 10 V ± 25 V 310 PF @ 25 V. - - - 24W (TC)
FDS6670AS Fairchild Semiconductor FDS6670As 1.0000
RFQ
 ECAD 7291 0.00000000 Fairchild Semiconductor Powertrench®, SyncFet ™ Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) FDS66 MOSFET (Metalloxid) 8-soic Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 13,5a (TA) 4,5 V, 10 V. 9mohm @ 13.5a, 10V 3V @ 1ma 38 nc @ 10 v ± 20 V 1540 PF @ 15 V - - - 2,5 W (TA)
MMBF4091 Fairchild Semiconductor MMBF4091 - - -
RFQ
 ECAD 3799 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv Herunterladen Verkäfer undefiniert UnberÜHrt Ereichen 2156-MMBF4091-600039 Ear99 8541.21.0095 1
FQA28N50F Fairchild Semiconductor Fqa28n50f - - -
RFQ
 ECAD 2936 0.00000000 Fairchild Semiconductor FRFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 MOSFET (Metalloxid) To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 30 N-Kanal 500 V 28,4a (TC) 10V 160 MOHM @ 14.2a, 10V 5 V @ 250 ähm 140 nc @ 10 v ± 30 v 5600 PF @ 25 V. - - - 310W (TC)
FQPF9N25 Fairchild Semiconductor Fqpf9n25 0,4800
RFQ
 ECAD 1341 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 600 N-Kanal 250 V 6.7a (TC) 10V 420mohm @ 3.35a, 10 V. 5 V @ 250 ähm 20 nc @ 10 v ± 30 v 700 PF @ 25 V. - - - 45W (TC)
FQE10N20CTU Fairchild Semiconductor Fqe10n20ctu 0,2600
RFQ
 ECAD 21 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-225aa, to-126-3 MOSFET (Metalloxid) To-126-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.920 N-Kanal 200 v 4a (TC) 10V 360Mohm @ 2a, 10V 4v @ 250 ähm 26 NC @ 10 V ± 30 v 510 PF @ 25 V. - - - 12,8 W (TC)
2N3663 Fairchild Semiconductor 2N3663 1.0000
RFQ
 ECAD 3328 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 350 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 2.000 1,5 dB 12V 50 ma Npn 20 @ 8ma, 10V 2.1 GHz 6,5 dB bei 60 MHz
D44H8 Fairchild Semiconductor D44H8 - - -
RFQ
 ECAD 2482 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 D44H8 2 w To-220ab Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Verkäfer undefiniert Ear99 8541.29.0075 630 60 v 10 a 10 µA Npn 1v @ 400 mA, 8a 40 @ 4a, 1V 50 MHz
HGTP7N60C3D Fairchild Semiconductor HGTP7N60C3D 1.0000
RFQ
 ECAD 6918 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet - - - K. Loch To-220-3 Standard 60 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 480 V, 7a, 50 Ohm, 15 V - - - 600 V 14 a 56 a 2v @ 15V, 7a 165 µJ (EIN), 600 µJ (AUS) 23 NC - - -
FQP11N40 Fairchild Semiconductor FQP11N40 0,8300
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 400 V 11.4a (TC) 10V 480MOHM @ 5.7a, 10V 5 V @ 250 ähm 35 NC @ 10 V ± 30 v 1400 PF @ 25 V. - - - 147W (TC)
FDAF59N30 Fairchild Semiconductor FDAF59N30 2.4400
RFQ
 ECAD 5606 0.00000000 Fairchild Semiconductor Unifet ™ Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3 Full Pack MOSFET (Metalloxid) To-3Pf Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 33 N-Kanal 300 V 34a (TC) 10V 56mohm @ 17a, 10V 5 V @ 250 ähm 100 nc @ 10 v ± 30 v 4670 PF @ 25 V. - - - 161W (TC)
FQI5P10TU Fairchild Semiconductor FQI5P10TU 0,4100
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 P-Kanal 100 v 4,5a (TC) 10V 1,05OHM @ 2,25A, 10 V. 4v @ 250 ähm 8.2 NC @ 10 V ± 30 v 250 PF @ 25 V. - - - 3,75W (TA), 40W (TC)
FQPF19N10 Fairchild Semiconductor Fqpf19n10 0,6100
RFQ
 ECAD 582 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8541.29.0095 1 N-Kanal 100 v 13,6a (TC) 10V 100mohm @ 6.8a, 10V 4v @ 250 ähm 25 NC @ 10 V ± 25 V 780 PF @ 25 V. - - - 38W (TC)
FQB27N25TM-F085 Fairchild Semiconductor FQB27N25TM-F085 1.3000
RFQ
 ECAD 5 0.00000000 Fairchild Semiconductor Automobil, AEC-Q101 Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab FQB27 MOSFET (Metalloxid) D²pak (to-263) Herunterladen Verkäfer undefiniert UnberÜHrt Ereichen 2156-FQB27N25TM-F085-600039 1 N-Kanal 250 V 25,5a (TC) 10V 131mohm @ 25.5a, 10V 5 V @ 250 ähm 49 NC @ 10 V. ± 30 v 1800 PF @ 25 V. - - - 417W (TC)
FQPF12P20XDTU Fairchild Semiconductor Fqpf12p20xdtu - - -
RFQ
 ECAD 1429 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack Fqpf1 MOSFET (Metalloxid) To-220f - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert Ear99 8542.39.0001 1 P-Kanal 200 v 7.3a (TC) 10V 470MOHM @ 3.65A, 10V 5 V @ 250 ähm 40 nc @ 10 v ± 30 v 1200 PF @ 25 V. - - - 50W (TC)
BCX59-9 Fairchild Semiconductor BCX59-9 - - -
RFQ
 ECAD 7759 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -65 ° C ~ 200 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen Ear99 8541.21.0095 1 45 V 100 ma - - - Npn - - - 250 @ 2MA, 5V 125 MHz
FQPF4N20 Fairchild Semiconductor Fqpf4n20 0,2700
RFQ
 ECAD 15 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 200 v 2.8a (TC) 10V 1,4OHM @ 1,4a, 10 V. 5 V @ 250 ähm 6,5 NC @ 10 V. ± 30 v 220 PF @ 25 V. - - - 27W (TC)
FGR15N40A Fairchild Semiconductor FGR15N40A 0,3200
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -40 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSOP (0,130 ", 3,30 mm Breit) Logik 1,25 w Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Verkäfer undefiniert Ear99 8541.29.0095 1 300 V, 150a, 51OHM, 4V - - - 400 V 8 a 150 a 6v @ 4V, 150a - - - 41 NC 180ns/460ns
HUF76137P3 Fairchild Semiconductor HUF76137P3 0,8400
RFQ
 ECAD 13 0.00000000 Fairchild Semiconductor Ultrafet® Schüttgut Aktiv -40 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220ab Herunterladen Rohs Nick Konform 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 N-Kanal 30 v 75a (TC) 4,5 V, 10 V. 9mohm @ 75a, 10V 3v @ 250 ähm 72 NC @ 10 V ± 20 V 2100 PF @ 25 V - - - 145W (TC)
PN2907ATF Fairchild Semiconductor PN2907ATF 0,0400
RFQ
 ECAD 54 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 625 MW To-92-3 Herunterladen Ear99 8541.21.0075 7.036 60 v 800 mA 20na (ICBO) PNP 1,6 V @ 50 Ma, 500 mA 100 @ 150 mA, 10V 200 MHz
KSD5041QBU Fairchild Semiconductor KSD5041QBU 0,0500
RFQ
 ECAD 9 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 750 MW To-92-3 Herunterladen Ear99 8542.39.0001 1 20 v 5 a 100NA (ICBO) Npn 1v @ 100 mA, 3a 230 @ 500 mA, 2V 150 MHz
FDD068AN03L Fairchild Semiconductor Fdd068an03l 0,6100
RFQ
 ECAD 8 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 17a (ta), 35a (TC) 4,5 V, 10 V. 5.7mohm @ 35a, 10V 2,5 V @ 250 ähm 60 nc @ 10 v ± 20 V 2525 PF @ 15 V - - - 80W (TC)
KSD526OTU Fairchild Semiconductor KSD526OTU 1.0000
RFQ
 ECAD 1311 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 30 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 80 v 4 a 30 µA (ICBO) Npn 1,5 V @ 300 Ma, 3a 70 @ 500 mA, 5V 8MHz
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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