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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkt (Hfe) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | FJNS3202RTA | - - - | ![]() | 5508 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | K. Loch | To-226-3, bis 92-3 Kurzkörper | Fjns32 | 300 MW | To-92s | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 250 MHz | 10 Kohms | 10 Kohms | |||||||||||||||||||||||||||
![]() | KSC1845PTA | 1.0000 | ![]() | 9449 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 120 v | 50 ma | 50na (ICBO) | Npn | 300 mV @ 1ma, 10 mA | 200 @ 1ma, 6v | 110 MHz | |||||||||||||||||||||||||||||
![]() | KST5087MTF | - - - | ![]() | 9487 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-KST5087MTF-600039 | 1 | 50 v | 50 ma | 50na (ICBO) | PNP | 300 mV @ 1ma, 10 mA | 250 @ 10ma, 5V | 40 MHz | |||||||||||||||||||||||||||||
![]() | FDS6574a | - - - | ![]() | 6719 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | - - - | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDS6574a-600039 | 1 | N-Kanal | 20 v | 16a (ta) | 1,8 V, 4,5 V. | 6mohm @ 16a, 4,5 V. | 1,5 V @ 250 ähm | 105 NC @ 4,5 V | ± 8 v | 7657 PF @ 10 V | - - - | 1W (TA) | |||||||||||||||||||||||||
![]() | HUFA75344G3 | 2.3600 | ![]() | 96 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 300 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | |||||||||||||||||||||||||
![]() | KSC2330YBU | 0,0700 | ![]() | 270 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 Langer Körper | 1 w | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0075 | 500 | 300 V | 100 ma | 100NA (ICBO) | Npn | 500mv @ 1ma, 10 mA | 120 @ 20 mA, 10V | 50 MHz | |||||||||||||||||||||||||||||
![]() | FDMS9408 | 0,6700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDMS940 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | - - - | ||||||||||||||||||||||||||||||||||||
![]() | FDS6994s | 0,9200 | ![]() | 50 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS69 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 2.500 | 2 n-kanal (dual) | 30V | 6.9a, 8.2a | 21mohm @ 6.9a, 10V | 3v @ 250 ähm | 12nc @ 5v | 800PF @ 15V | Logikpegel -tor | ||||||||||||||||||||||||
![]() | BC338 | 0,0400 | ![]() | 8136 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 258 | 25 v | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||||
![]() | HUF75631SK8 | 0,9500 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 5.5a (TA) | 10V | 39mohm @ 5.5a, 10V | 4v @ 250 ähm | 79 NC @ 20 V | ± 20 V | 1225 PF @ 25 V. | - - - | 2,5 W (TA) | |||||||||||||||||||||||
![]() | Irf820b | 1.0000 | ![]() | 7283 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | RFD16N05NL | 0,5100 | ![]() | 776 | 0.00000000 | Fairchild Semiconductor | PSPICE® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 16a (TC) | 10V | 47mohm @ 16a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | ± 20 V | 900 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||||
![]() | BC33725BU | 0,0400 | ![]() | 85 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 7.474 | 45 V | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||||||||
FDW252p | - - - | ![]() | 6011 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | MOSFET (Metalloxid) | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.500 | P-Kanal | 20 v | 8.8a (ta) | 2,5 V, 4,5 V. | 12,5 MOHM @ 8,8a, 4,5 V. | 1,5 V @ 250 ähm | 66 NC @ 4,5 V. | ± 12 V | 5045 PF @ 10 V | - - - | 1,3W (TA) | ||||||||||||||||||||||||||
![]() | SGS13N60UFDtu | 0,5100 | ![]() | 118 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | SGS13 | Standard | 45 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 300 V, 6,5a, 50 Ohm, 15 V. | 55 ns | - - - | 600 V | 13 a | 52 a | 2,6 V @ 15V, 6,5a | 85 µJ (EIN), 95 µJ (AUS) | 25 NC | 20ns/70ns | ||||||||||||||||||||||||
![]() | HUF75309D3S | 0,2900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | Dpak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 55 v | 19A (TC) | 70 MOHM @ 19A, 10V | 4v @ 250 ähm | 24 NC @ 20 V | ± 20 V | 350 PF @ 25 V. | - - - | 55W (TC) | ||||||||||||||||||||||||||
![]() | FJX1182YTF | - - - | ![]() | 2010 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | SC-70, SOT-323 | FJX118 | 150 MW | SC-70 (SOT323) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 30 v | 500 mA | 100NA (ICBO) | PNP | 250mv @ 10 mA, 100 mA | 120 @ 100 mA, 1V | 200 MHz | ||||||||||||||||||||||||||
![]() | KSC1815gra | 0,0500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 50 v | 150 Ma | 100NA (ICBO) | Npn | 250mv @ 10 mA, 100 mA | 200 @ 2ma, 6v | 80MHz | |||||||||||||||||||||||||||||
![]() | FQAF40N25 | 2.9800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 250 V | 24a (TC) | 10V | 70 Mohm @ 12a, 10V | 5 V @ 250 ähm | 110 nc @ 10 v | ± 30 v | 4000 PF @ 25 V. | - - - | 108W (TC) | |||||||||||||||||||||||||
![]() | 2N3905TFR | 0,0200 | ![]() | 6136 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 4,373 | 40 v | 200 ma | - - - | PNP | 400mv @ 5ma, 50 mA | 50 @ 10 ma, 1V | - - - | |||||||||||||||||||||||||||||
![]() | KSP2907ATA | 0,0400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | Herunterladen | Ear99 | 8542.39.0001 | 7.925 | 60 v | 600 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||||||||||
![]() | Fdfma2p859t | 0,2700 | ![]() | 14 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-udfn exponiert pad | MOSFET (Metalloxid) | Mikrofet 2x2 Dünn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 3a (ta) | 1,8 V, 4,5 V. | 120 MOHM @ 3A, 4,5 V. | 1,3 V @ 250 ähm | 6 NC @ 4,5 V. | ± 8 v | 435 PF @ 10 V. | Schottky Diode (Isolier) | 1.4W (TA) | |||||||||||||||||||||||||
![]() | FDZ7064A | 0,8500 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 30-WFBGA | MOSFET (Metalloxid) | 30-bga (4x3,5) | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 3.000 | N-Kanal | 30 v | 13,5a (TA) | 4,5 V, 10 V. | 5.6mohm @ 13.5a, 10V | 3V @ 1ma | 51 NC @ 10 V | ± 20 V | 1960 PF @ 15 V | - - - | 2.2W (TA) | |||||||||||||||||||||||||
![]() | Fdpf18n20ft | - - - | ![]() | 1903 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | 200 v | 18a (TC) | 10V | 140MOHM @ 9A, 10V | 5 V @ 250 ähm | 26 NC @ 10 V | ± 30 v | 1180 PF @ 25 V. | - - - | 41W (TC) | |||||||||||||||||||||||||||
![]() | Hrf3205 | 1.5800 | ![]() | 82 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 100a (TC) | 8mohm @ 59a, 10V | 4v @ 250 ähm | 170 nc @ 10 v | ± 20 V | 4000 PF @ 25 V. | - - - | 175W (TC) | ||||||||||||||||||||||||||
![]() | FQI13N06LTU | 0,7200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 60 v | 13,6a (TC) | 5v, 10V | 110MOHM @ 6.8a, 10V | 2,5 V @ 250 ähm | 6.4 NC @ 5 V. | ± 20 V | 350 PF @ 25 V. | - - - | 3,75W (TA), 45W (TC) | |||||||||||||||||||||||||
![]() | FDS8958 | 1.0000 | ![]() | 3491 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | N und p-kanal | 30V | 7a, 5a | 28mohm @ 7a, 10V | 3v @ 250 ähm | 26nc @ 10v | 789PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | FDMA3028n | 1.0000 | ![]() | 1705 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA3028 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 3.8a | 68mohm @ 3,8a, 4,5 V. | 1,5 V @ 250 ähm | 5.2nc @ 5v | 375PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | KSE13007H2SMTU | - - - | ![]() | 3760 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSE13007 | To-220-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | - - - | Npn | 3v @ 2a, 8a | 8 @ 2a, 5V | 4MHz | |||||||||||||||||||||||||||||
![]() | FDMS9408L-F085 | - - - | ![]() | 7461 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 80A (TC) | 1,7mohm @ 80a, 10V | 3v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 5750 PF @ 20 V | - - - | 214W (TJ) |
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