Tel: +86-0755-83501315
E-Mail:sales@sic-components.com
Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FQP3P50 | 1.0000 | ![]() | 6719 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 500 V | 2.7a (TC) | 10V | 4,9ohm bei 1,35a, 10V | 5 V @ 250 ähm | 23 NC @ 10 V | ± 30 v | 660 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||||||||
![]() | Rfd16n05_nl | 0,6400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | PSPICE® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 50 v | 16a (TC) | 10V | 47mohm @ 16a, 10V | 4v @ 250 ähm | 80 nc @ 20 V | ± 20 V | 900 PF @ 25 V. | - - - | 72W (TC) | |||||||||||||||||||||
![]() | HUF76443S3ST | 1.6500 | ![]() | 800 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 800 | N-Kanal | 60 v | 75a (TC) | 4,5 V, 10 V. | 8mohm @ 75a, 10V | 3v @ 250 ähm | 129 NC @ 10 V | ± 16 v | 4115 PF @ 25 V. | - - - | 260W (TC) | |||||||||||||||||||||
![]() | KSD2012GTU | 0,4200 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 25 w | To-220f-3 | - - - | Verkäfer undefiniert | Reichweiite Betroffen | 2156-kSD2012Gtu-600039 | 772 | 60 v | 3 a | 100 µA (ICBO) | Npn | 1v @ 200 Ma, 2a | 150 @ 500 mA, 5V | 3MHz | |||||||||||||||||||||||||||
![]() | FDJ1027p | 0,3200 | ![]() | 283 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SC-75-6 FLMP | FDJ1027 | MOSFET (Metalloxid) | 900 MW | SC75-6 FLMP | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 2.8a | 160 MOHM @ 2,8a, 4,5 V. | 1,5 V @ 250 ähm | 4nc @ 4,5V | 290pf @ 10v | Logikpegel -tor | ||||||||||||||||||||||||
![]() | MMBT4400 | 0,0300 | ![]() | 97 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MMBT4400 | 350 MW | SOT-23 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 8,876 | 40 v | 600 mA | - - - | Npn | 750 MV @ 50 Ma, 500 mA | 50 @ 150 mA, 10V | - - - | ||||||||||||||||||||||||
![]() | ISL9N302AS3 | 1.9800 | ![]() | 400 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Aktiv | - - - | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | Isl9 | MOSFET (Metalloxid) | I2pak (to-262) | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 2,3 MOHM @ 75A, 10V | 3v @ 250 ähm | 300 NC @ 10 V. | ± 20 V | 11000 PF @ 15 V | - - - | 345W (TC) | ||||||||||||||||||||
![]() | ISL9v5036p3 | - - - | ![]() | 2337 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Rohr | Veraltet | -40 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | Logik | 250 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | 300 V, 1kohm, 5V | - - - | 390 v | 46 a | 1,6 V @ 4V, 10a | - - - | 32 NC | -/10,8 µs | |||||||||||||||||||||||||
![]() | HUF75631SK8T | - - - | ![]() | 6747 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 100 v | 5.5a (TA) | 10V | 39mohm @ 5.5a, 10V | 4v @ 250 ähm | 79 NC @ 20 V | ± 20 V | 1225 PF @ 25 V. | - - - | 2,5 W (TA) | |||||||||||||||||||||||
![]() | Fqp7p06 | 0,6600 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 457 | P-Kanal | 60 v | 7a (TC) | 10V | 410mohm @ 3,5a, 10V | 4v @ 250 ähm | 8.2 NC @ 10 V | ± 25 V | 295 PF @ 25 V. | - - - | 45W (TC) | ||||||||||||||||||||||||
![]() | FDP7030L | 2.1300 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 30 v | 80A (TA) | 4,5 V, 10 V. | 7mohm @ 40a, 10V | 3v @ 250 ähm | 33 NC @ 5 V. | ± 20 V | 2440 PF @ 15 V | - - - | 68W (TC) | |||||||||||||||||||||||
![]() | Sfi9z14tu | 0,1700 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 1 | P-Kanal | 60 v | 6.7a (TC) | 10V | 500mohm @ 3.4a, 10 V. | 4v @ 250 ähm | 11 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 3,8 W (TA), 38W (TC) | |||||||||||||||||||||
![]() | FDS8949 | 1.0000 | ![]() | 2329 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 2W | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 40V | 6a | 29mohm @ 6a, 10V | 3v @ 250 ähm | 11nc @ 5v | 955PF @ 20V | Logikpegel -tor | |||||||||||||||||||||||||
![]() | FGL40N150Dtu | - - - | ![]() | 3389 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | Standard | 200 w | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2 | - - - | 170 ns | - - - | 1500 V | 40 a | 120 a | 4,5 V @ 15V, 40a | - - - | 170 nc | - - - | ||||||||||||||||||||||
![]() | FDS4070N7 | 1.6200 | ![]() | 71 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 15.3a (ta) | 10V | 7mohm @ 15.3a, 10V | 5 V @ 250 ähm | 67 NC @ 10 V | ± 20 V | 2819 PF @ 20 V | - - - | 3W (TA) | |||||||||||||||||||||||
![]() | HUFA75344S3S | 0,9400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | |||||||||||||||||||||||
![]() | FDS6690 | 1.0900 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 13,5 MOHM @ 10a, 10V | 3v @ 250 ähm | 18 NC @ 5 V. | ± 20 V | 1340 PF @ 15 V | - - - | 1W (TA) | |||||||||||||||||||||
![]() | FGA50N100BNTtu | 2.6000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 156 w | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | 600 V, 60A, 10OHM, 15 V. | Npt und griffen | 1000 v | 50 a | 200 a | 2,9 V @ 15V, 60a | - - - | 257 NC | 34ns/243ns | ||||||||||||||||||||||||
![]() | FJP5554 | 1.0000 | ![]() | 2934 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 400 V | 4 a | 250 µA | Npn | 1,5 V @ 1a, 3,5a | 20 @ 800 mA, 3V | - - - | |||||||||||||||||||||||||||
![]() | SFR9120TF | 0,2000 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.000 | P-Kanal | 100 v | 4,9a (TC) | 10V | 600 MOHM @ 2,5A, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 550 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | |||||||||||||||||||||
![]() | HUF76629D3ST_NL | - - - | ![]() | 7064 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 86 | N-Kanal | 100 v | 20A (TC) | 4,5 V, 10 V. | 52mohm @ 20a, 10V | 3v @ 250 ähm | 43 NC @ 10 V | ± 16 v | 1285 PF @ 25 V. | - - - | 150W (TJ) | |||||||||||||||||||||
![]() | FDMS7672 | 0,5200 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power56 | Herunterladen | Ear99 | 8542.39.0001 | 623 | N-Kanal | 30 v | 19A (TA), 28a (TC) | 4,5 V, 10 V. | 5mohm @ 19a, 10V | 3v @ 250 ähm | 44 NC @ 10 V. | ± 20 V | 2960 PF @ 15 V | - - - | 2,5 W (TA), 48W (TC) | ||||||||||||||||||||||||
![]() | Fdme1023pzt | - - - | ![]() | 4784 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-UFDFN exponiert Pad | FDME1023 | MOSFET (Metalloxid) | 600 MW | 6-umlp (1,6x1,6) | - - - | 0000.00.0000 | 1 | 2 p-kanal (dual) | 20V | 2.6a | 142mohm @ 2,3a, 4,5 V. | 1V @ 250 ähm | 7.7nc @ 4.5v | 405PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||
![]() | 2N7052 | 0,0600 | ![]() | 5293 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 12 | 100 v | 1,5 a | 200na | NPN - Darlington | 1,5 V @ 100 µA, 100 mA | 1000 @ 1a, 5v | 200 MHz | |||||||||||||||||||||||||||
FDW2510NZ | 0,7200 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSSOP (0,173 ", 4,40 mm Breit) | FDW25 | MOSFET (Metalloxid) | 1.1W | 8-tssop | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | 2 n-kanal (dual) | 20V | 6.4a | 24MOHM @ 6.4a, 4,5 V. | 1,5 V @ 250 ähm | 12nc @ 4,5V | 870PF @ 10V | Logikpegel -tor | |||||||||||||||||||||||||
![]() | ISL9V2040S3ST | 1.1700 | ![]() | 82 | 0.00000000 | Fairchild Semiconductor | ECOSPARK® | Schüttgut | Aktiv | -40 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | Logik | 130 w | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 300 V, 1kohm, 5V | - - - | 430 v | 10 a | 1,9 V @ 4V, 6a | - - - | 12 NC | -/3,64 µs | ||||||||||||||||||||||||||
![]() | MMBT2907A | 1.0000 | ![]() | 2288 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 60 v | 600 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | |||||||||||||||||||||||||||
![]() | BC80716MTF | 0,0300 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | BC807 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 45 V | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 100 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||||
![]() | 2n3859a | 1.0000 | ![]() | 5026 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1 | 60 v | 500 mA | 500NA (ICBO) | Npn | - - - | 100 @ 1ma, 1V | 250 MHz | |||||||||||||||||||||||||||
![]() | KSA1015GRA | 0,0300 | ![]() | 43 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 400 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 50 v | 150 Ma | 100NA (ICBO) | PNP | 300mv @ 10 mA, 100 mA | 200 @ 2ma, 6v | 80MHz |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus