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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | HUFA75344S3ST | 0,9500 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) | ||||||||||||||||||||||||||
![]() | FDD6612A | 0,5000 | ![]() | 262 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 598 | N-Kanal | 30 v | 9,5a (TA), 30a (TC) | 4,5 V, 10 V. | 20mohm @ 9.5a, 10V | 3v @ 250 ähm | 9.4 NC @ 5 V. | ± 20 V | 660 PF @ 15 V | - - - | 2,8 W (TA), 36W (TC) | |||||||||||||||||||||||||||
![]() | Si4425dy | - - - | ![]() | 9161 | 0.00000000 | Fairchild Semiconductor | Powertrench ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 30 v | 11a (ta) | 4,5 V, 10 V. | 14mohm @ 11a, 10V | 3v @ 250 ähm | 42 NC @ 5 V | ± 20 V | 3000 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||
![]() | FDS6690As | 1.0000 | ![]() | 5344 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS6690 | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 10a (ta) | 4,5 V, 10 V. | 12mohm @ 10a, 10V | 3V @ 1ma | 23 NC @ 10 V | ± 20 V | 910 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||
![]() | Fqpf9p25ydtu | 0,8500 | ![]() | 705 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 1 | P-Kanal | 250 V | 6a (TC) | 10V | 620mohm @ 3a, 10V | 5 V @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1180 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||||||
![]() | FDA16N50 | 1.6000 | ![]() | 384 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3pn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 16,5a (TC) | 10V | 380MOHM @ 8.3A, 10V | 5 V @ 250 ähm | 45 nc @ 10 v | ± 30 v | 1945 PF @ 25 V. | - - - | 205W (TC) | ||||||||||||||||||||||||||
![]() | Huf75332p3_nl | - - - | ![]() | 7342 | 0.00000000 | Fairchild Semiconductor | Ultrafet® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 55 v | 60a (TC) | 10V | 19Mohm @ 60a, 10V | 4v @ 250 ähm | 85 NC @ 20 V | ± 20 V | 1300 PF @ 25 V. | - - - | 145W (TC) | ||||||||||||||||||||||||
![]() | IRLI610ATU | 0,1600 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 200 v | 3.3a (TC) | 5v | 1,5OHM @ 1,65A, 5V | 2v @ 250 ähm | 9 NC @ 5 V | ± 20 V | 240 PF @ 25 V. | - - - | 3.1W (TA), 33W (TC) | ||||||||||||||||||||||||||
![]() | Fjv4114rmtf | - - - | ![]() | 2162 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FJV411 | 200 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 68 @ 5ma, 5v | 200 MHz | 4.7 Kohms | 47 Kohms | ||||||||||||||||||||||||||
![]() | PN5134 | 0,0500 | ![]() | 32 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 10 v | 500 mA | 400na | Npn | 250 mV @ 1ma, 10 mA | 20 @ 10ma, 1V | - - - | ||||||||||||||||||||||||||||||
![]() | FMG1G300US60LE | 73.7500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 892 w | Standard | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | - - - | 600 V | 300 a | 2,7 V @ 15V, 300A | 250 µA | NEIN | |||||||||||||||||||||||||||
![]() | 2N5210 | 0,0200 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92 | Herunterladen | Verkäfer undefiniert | Reichweiite Betroffen | 2156-2N5210-600039 | 1 | 50 v | 50 ma | 50na (ICBO) | Npn | 700 mv @ 1ma, 10 mA | 250 @ 10ma, 5V | 30 MHz | ||||||||||||||||||||||||||||||
![]() | FCP4N60 | 1.1300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Superfet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 267 | N-Kanal | 600 V | 3.9a (TC) | 10V | 1,2OHM @ 2a, 10V | 5 V @ 250 ähm | 16.6 NC @ 10 V. | ± 30 v | 540 PF @ 25 V. | - - - | 50W (TC) | |||||||||||||||||||||||||||
![]() | FDS6680A | 1.0000 | ![]() | 8930 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 12,5a (TA) | 4,5 V, 10 V. | 9,5 MOHM @ 12,5A, 10V | 3v @ 250 ähm | 23 NC @ 5 V | ± 20 V | 1620 PF @ 15 V | - - - | 2,5 W (TA) | |||||||||||||||||||||||||||
![]() | KSB1116AGTA | - - - | ![]() | 1565 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 750 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.141 | 60 v | 1 a | 100NA (ICBO) | PNP | 300 mV @ 50 Ma, 1a | 200 @ 100 Ma, 2V | 120 MHz | ||||||||||||||||||||||||||||||
![]() | FDU8770 | 1.5600 | ![]() | 7 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 25 v | 35a (TC) | 4,5 V, 10 V. | 4mohm @ 35a, 10V | 2,5 V @ 250 ähm | 73 NC @ 10 V | ± 20 V | 3720 PF @ 13 V | - - - | 115W (TC) | ||||||||||||||||||||||||||
![]() | FJX3001RTF | 0,0200 | ![]() | 40 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | Oberflächenhalterung | SC-70, SOT-323 | FJX300 | 200 MW | SC-70-3 (SOT323) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | NPN - VORGEPANNT | 300 mV @ 500 µA, 10 mA | 20 @ 10ma, 5V | 250 MHz | 4.7 Kohms | 4.7 Kohms | ||||||||||||||||||||||||||||
![]() | KSC5321 | 0,2400 | ![]() | 48 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | KSC532 | To-220-3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | 100 µA (ICBO) | Npn | 1v @ 600 mA, 3a | 15 @ 600 mA, 5V | 14MHz | ||||||||||||||||||||||||||||||
![]() | BCP54 | 0,1900 | ![]() | 3954 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-261-4, to-261aa | 1,5 w | SOT-223-4 | Herunterladen | Ear99 | 8541.29.0075 | 1,209 | 45 V | 1,5 a | 100NA (ICBO) | Npn | 500 mv @ 50 mA, 500 mA | 40 @ 150 mA, 2V | - - - | |||||||||||||||||||||||||||||||
![]() | Fqh90n10v2 | 2.9800 | ![]() | 370 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247ad | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 100 v | 105a (TC) | 10V | 10MOHM @ 52,5a, 10V | 4v @ 250 ähm | 191 NC @ 10 V. | ± 30 v | 6150 PF @ 25 V. | - - - | 330W (TC) | ||||||||||||||||||||||||
![]() | FDS8926a | - - - | ![]() | 1981 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS89 | MOSFET (Metalloxid) | 900 MW | 8-soic | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | 2 n-kanal (dual) | 30V | 5.5a | 30mohm @ 5,5a, 4,5 V. | 1V @ 250 ähm | 28nc @ 4,5V | 900PF @ 10V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | SFR9120TM | 0,2500 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252-3 (dpak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 8541.29.0095 | 2.500 | P-Kanal | 100 v | 4,9a (TC) | 10V | 600 MOHM @ 2,5A, 10V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 550 PF @ 25 V. | - - - | 2,5 W (TA), 32W (TC) | ||||||||||||||||||||||||
![]() | FMG1G400US60L | 104.0200 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | Modul | 1136 w | Standard | - - - | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | Einzel | - - - | 600 V | 400 a | 2,7 V @ 15V, 400a | 250 µA | NEIN | |||||||||||||||||||||||||||
![]() | FJP3307DTU | 0,4300 | ![]() | 15 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | 80 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 400 V | 8 a | - - - | Npn | 3v @ 2a, 8a | 8 @ 2a, 5V | - - - | ||||||||||||||||||||||||||||
![]() | KST64MTF | 0,0500 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | - - - | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 30 v | 500 mA | 100NA (ICBO) | PNP - Darlington | 1,5 V @ 100 µA, 100 mA | 20000 @ 100ma, 5V | 125 MHz | ||||||||||||||||||||||||||||||
![]() | Fqpf9n25 | 0,4800 | ![]() | 1341 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 600 | N-Kanal | 250 V | 6.7a (TC) | 10V | 420mohm @ 3.35a, 10 V. | 5 V @ 250 ähm | 20 nc @ 10 v | ± 30 v | 700 PF @ 25 V. | - - - | 45W (TC) | ||||||||||||||||||||||||||
![]() | FDS6670As | 1.0000 | ![]() | 7291 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS66 | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 13,5a (TA) | 4,5 V, 10 V. | 9mohm @ 13.5a, 10V | 3V @ 1ma | 38 nc @ 10 v | ± 20 V | 1540 PF @ 15 V | - - - | 2,5 W (TA) | ||||||||||||||||||||||||||
![]() | Fqe10n20ctu | 0,2600 | ![]() | 21 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | MOSFET (Metalloxid) | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.920 | N-Kanal | 200 v | 4a (TC) | 10V | 360Mohm @ 2a, 10V | 4v @ 250 ähm | 26 NC @ 10 V | ± 30 v | 510 PF @ 25 V. | - - - | 12,8 W (TC) | ||||||||||||||||||||||||||
![]() | Fqa28n50f | - - - | ![]() | 2936 | 0.00000000 | Fairchild Semiconductor | FRFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 500 V | 28,4a (TC) | 10V | 160 MOHM @ 14.2a, 10V | 5 V @ 250 ähm | 140 nc @ 10 v | ± 30 v | 5600 PF @ 25 V. | - - - | 310W (TC) | ||||||||||||||||||||||||||
![]() | FGR15N40A | 0,3200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | Logik | 1,25 w | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | 300 V, 150a, 51OHM, 4V | - - - | 400 V | 8 a | 150 a | 6v @ 4V, 150a | - - - | 41 NC | 180ns/460ns |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerhaus