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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max Eingang LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Reverse Recovery Time (TRR) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Strom - Sammler Cutoff (max) NTC Thermistor Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang
FQI5N80TU Fairchild Semiconductor FQI5N80TU 0,8000
RFQ
ECAD 993 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 800 V 4.8a (TC) 10V 2,6OHM @ 2,4a, 10 V. 5 V @ 250 ähm 33 NC @ 10 V. ± 30 v 1250 PF @ 25 V. - - - 3.13W (TA), 140W (TC)
FMG2G300US60E Fairchild Semiconductor FMG2G300US60E 35.8700
RFQ
ECAD 5324 0.00000000 Fairchild Semiconductor - - - Kasten Veraltet -40 ° C ~ 150 ° C (TJ) Chassis -berg 19 Uhr ha 892 w Standard 19 Uhr ha Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2 Halbbrücke - - - 600 V 300 a 2,7 V @ 15V, 300A 250 µA NEIN
HGTG11N120CND Fairchild Semiconductor HGTG11N120CND - - -
RFQ
ECAD 3823 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-247-3 Standard 298 w To-247 Herunterladen Ear99 8542.39.0001 1 960 V, 11A, 10OHM, 15 V. 70 ns Npt 1200 V 43 a 80 a 2,4 V @ 15V, 11a 950 µJ (EIN), 1,3mj (AUS) 100 nc 23ns/180ns
HUF75645S3S Fairchild Semiconductor HUF75645S3S 0,8700
RFQ
ECAD 375 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 100 v 75a (TC) 10V 14mohm @ 75a, 10V 4v @ 250 ähm 238 NC @ 20 V ± 20 V 3790 PF @ 25 V. - - - 310W (TC)
FQP4N50 Fairchild Semiconductor FQP4N50 0,2700
RFQ
ECAD 2 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Nicht Anwendbar UnberÜHrt Ereichen 2156-FQP4N50-600039 1 N-Kanal 500 V 3.4a (TC) 10V 2,7OHM @ 1,7a, 10V 5 V @ 250 ähm 13 NC @ 10 V ± 30 v 460 PF @ 25 V. - - - 70W (TC)
FGA40T65UQDF Fairchild Semiconductor FGA40T65UQDF 1,9000
RFQ
ECAD 2 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch TO-3P-3, SC-65-3 Standard 231 w To-3pn Herunterladen Ear99 8542.39.0001 1 400 V, 40a, 6OHM, 15 V. 89 ns Npt 650 V 80 a 120 a 1,67 V @ 15V, 40a 989 µj (EIN), 310 µJ (AUS) 306 NC 32ns/271ns
IRFS240B Fairchild Semiconductor IRFS240B 0,7200
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f Herunterladen Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 N-Kanal 200 v 12,8a (TC) 10V 180mohm @ 6.4a, 10V 4v @ 250 ähm 58 NC @ 10 V ± 30 v 1700 PF @ 25 V. - - - 73W (TC)
NDH8302P Fairchild Semiconductor NDH8302p 0,4400
RFQ
ECAD 66 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSOP (0,130 ", 3,30 mm Breit) NDH8302 MOSFET (Metalloxid) 800 MW (TA) Supersot ™ -8 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Verkäfer undefiniert Ear99 8541.21.0095 3.000 2 p-kanal (dual) 20V 2a (ta) 130 MOHM @ 2A, 4,5 V. 1V @ 250 ähm 11nc @ 4,5V 515PF @ 10V - - -
IRFR210BTM Fairchild Semiconductor IRFR210BTM 0,2200
RFQ
ECAD 17 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen Rohs Nick Konform 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 2.500 N-Kanal 200 v 2.7a (TC) 10V 1,5OHM @ 1,35A, 10V 4v @ 250 ähm 9.3 NC @ 10 V ± 30 v 225 PF @ 25 V. - - - 2,5 W (TA), 26W (TC)
FQA7N90 Fairchild Semiconductor FQA7N90 1.4900
RFQ
ECAD 939 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 MOSFET (Metalloxid) To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 30 N-Kanal 900 V 7.4a (TC) 10V 1,55 Ohm @ 3,7a, 10 V 5 V @ 250 ähm 59 NC @ 10 V ± 30 v 2280 PF @ 25 V. - - - 198W (TC)
HUF75339G3 Fairchild Semiconductor HUF75339G3 1.1300
RFQ
ECAD 3 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 300 N-Kanal 55 v 75a (TC) 10V 12mohm @ 75a, 10V 4v @ 250 ähm 130 NC @ 20 V ± 20 V 2000 PF @ 25 V. - - - 200W (TC)
KSC3569YTU Fairchild Semiconductor KSC3569Ytu 1.0000
RFQ
ECAD 6299 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 Full Pack 15 w To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 400 V 2 a 10 µA (ICBO) Npn 1v @ 100 mA, 500 mA 40 @ 100 Ma, 5V - - -
FCPF2250N80Z Fairchild Semiconductor FCPF2250N80Z 1.5100
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen Ear99 8542.39.0001 216 N-Kanal 800 V 2.6a (TC) 10V 2,25OHM @ 1,3a, 10 V. 4,5 V @ 260 ähm 14 NC @ 10 V ± 20 V 585 PF @ 100 V - - - 21.9W (TC)
FDS6682 Fairchild Semiconductor FDS6682 - - -
RFQ
ECAD 4662 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 14a (ta) 4,5 V, 10 V. 7,5 MOHM @ 14A, 10V 3v @ 250 ähm 31 NC @ 5 V. ± 20 V 2310 PF @ 15 V - - - 1W (TA)
FCP400N80Z Fairchild Semiconductor FCP400N80Z - - -
RFQ
ECAD 1882 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 126 N-Kanal 800 V 14a (TC) 10V 400MOHM @ 5.5A, 10V 4,5 V @ 1,1 Ma 56 NC @ 10 V ± 20 V 2350 PF @ 1 V. - - - 195W (TC)
FDP55N06 Fairchild Semiconductor FDP55N06 - - -
RFQ
ECAD 6365 0.00000000 Fairchild Semiconductor Unifet ™ Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 60 v 55a (TC) 10V 22mohm @ 27.5a, 10V 4v @ 250 ähm 37 NC @ 10 V. ± 25 V 1510 PF @ 25 V. - - - 114W (TC)
RFD3055LESM Fairchild Semiconductor RFD3055LESM 0,2600
RFQ
ECAD 2 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1,255 N-Kanal 60 v 11a (TC) 5v 107mohm @ 8a, 5V 3v @ 250 ähm 11.3 NC @ 10 V ± 16 v 350 PF @ 25 V. - - - 38W (TC)
FDMA3028N Fairchild Semiconductor FDMA3028n 1.0000
RFQ
ECAD 1705 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 6-VDFN-Exponiertebad FDMA3028 MOSFET (Metalloxid) 700 MW 6-microfet (2x2) Herunterladen Ear99 8542.39.0001 1 2 n-kanal (dual) 30V 3.8a 68mohm @ 3,8a, 4,5 V. 1,5 V @ 250 ähm 5.2nc @ 5v 375PF @ 15V Logikpegel -tor
FQI17N08TU Fairchild Semiconductor FQI17N08TU 0,5100
RFQ
ECAD 1 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 80 v 16,5a (TC) 10V 115mohm @ 8.25a, ​​10V 4v @ 250 ähm 15 NC @ 10 V ± 25 V 450 PF @ 25 V. - - - 3.13W (TA), 65W (TC)
HUF76013P3 Fairchild Semiconductor HUF76013P3 0,2900
RFQ
ECAD 5 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 20 v 20A (TC) 5v, 10V 22mohm @ 20a, 10V 3v @ 250 ähm 17 NC @ 10 V ± 20 V 624 PF @ 20 V - - - 50W (TC)
FQP2P25 Fairchild Semiconductor FQP2P25 - - -
RFQ
ECAD 3576 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 750 P-Kanal 250 V 2.3a (TC) 10V 4OHM @ 1,15a, 10 V. 5 V @ 250 ähm 8,5 NC @ 10 V ± 30 v 250 PF @ 25 V. - - - 52W (TC)
FDS6294 Fairchild Semiconductor FDS6294 0,4500
RFQ
ECAD 27 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) FDS62 MOSFET (Metalloxid) 8-soic Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 13a (ta) 4,5 V, 10 V. 11.3mohm @ 13a, 10V 3v @ 250 ähm 14 NC @ 5 V ± 20 V 1205 PF @ 15 V - - - 3W (TA)
FQD3N40TF Fairchild Semiconductor FQD3N40TF 0,3700
RFQ
ECAD 26 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.000 N-Kanal 400 V 2a (TC) 10V 3,4ohm @ 1a, 10V 5 V @ 250 ähm 7,5 NC @ 10 V ± 30 v 230 PF @ 25 V. - - - 2,5 W (TA), 30W (TC)
TIP115 Fairchild Semiconductor TIP115 1.0000
RFQ
ECAD 4881 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-220-3 TIP115 2 w To-220ab Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 60 v 2 a 2ma PNP - Darlington 2,5 V @ 8ma, 2a 1000 @ 1a, 4V - - -
IRFU024ATU Fairchild Semiconductor IRFU024ATU - - -
RFQ
ECAD 1398 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv IRFU024 - - - - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert 1 - - -
FQP5N30 Fairchild Semiconductor FQP5N30 0,4400
RFQ
ECAD 2 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 300 V 5.4a (TC) 10V 900MOHM @ 2,7a, 10V 5 V @ 250 ähm 13 NC @ 10 V ± 30 v 430 PF @ 25 V. - - - 70W (TC)
FDU8780 Fairchild Semiconductor FDU8780 0,2900
RFQ
ECAD 81 0.00000000 Fairchild Semiconductor Powertrench® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 75 N-Kanal 25 v 35a (TC) 4,5 V, 10 V. 8,5 MOHM @ 35A, 10V 2,5 V @ 250 ähm 29 NC @ 10 V ± 20 V 1440 PF @ 13 V - - - 50W (TC)
FDZ1827NZ Fairchild Semiconductor FDZ1827NZ 0,1200
RFQ
ECAD 20 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 6-XFBGA, WLCSP FDZ1827 MOSFET (Metalloxid) 2W (TA) 6-WLCSP (1,3x2,3) Herunterladen Ear99 8542.39.0001 1 2 N-Kanal (dual) gemeinsame Abfluss 20V 10a (ta) 13mohm @ 1a, 4,5 V. 1,2 V @ 250 ähm 24nc @ 10v 2055PF @ 10V - - -
KSC839CYTA Fairchild Semiconductor KSC839cyta 0,0200
RFQ
ECAD 6430 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 250 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1,957 30 v 100 ma 100NA (ICBO) Npn 400mv @ 1ma, 10 mA 120 @ 2MA, 12V 200 MHz
FDD13AN06A0_NL Fairchild Semiconductor Fdd13an06a0_nl - - -
RFQ
ECAD 6377 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 1 N-Kanal 60 v 9,9a (TA), 50A (TC) 6 V, 10V 13,5 MOHM @ 50A, 10V 4v @ 250 ähm 29 NC @ 10 V ± 20 V 1350 PF @ 25 V. - - - 115W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus