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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | VCE (ON) (max) @ vge, IC | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FMG2G300US60E | 35.8700 | ![]() | 5324 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr ha | 892 w | Standard | 19 Uhr ha | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2 | Halbbrücke | - - - | 600 V | 300 a | 2,7 V @ 15V, 300A | 250 µA | NEIN | |||||||||||||||||||||
![]() | Fqpf13n10 | 0,6100 | ![]() | 146 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 100 v | 8.7a (TC) | 10V | 180 MOHM @ 4,35A, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 25 V | 450 PF @ 25 V. | - - - | 30W (TC) | ||||||||||||||||||
![]() | FDPF20N50ft | 1.0000 | ![]() | 6889 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 500 V | 20A (TC) | 10V | 260MOHM @ 10a, 10V | 5 V @ 250 ähm | 65 NC @ 10 V | ± 30 v | 3390 PF @ 25 V. | - - - | 38,5W (TC) | |||||||||||||||||||
![]() | KSD1408OTU | 1.0000 | ![]() | 9824 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 25 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 80 v | 4 a | 30 µA (ICBO) | Npn | 1,5 V @ 300 Ma, 3a | 70 @ 500 mA, 5V | 8MHz | ||||||||||||||||||||||
![]() | FQAF28N15 | 0,8000 | ![]() | 473 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 150 v | 22a (TC) | 10V | 90 MOHM @ 11A, 10V | 4v @ 250 ähm | 52 NC @ 10 V | ± 25 V | 1600 PF @ 25 V. | - - - | 102W (TC) | ||||||||||||||||||
![]() | SI3441DV | - - - | ![]() | 2419 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | P-Kanal | 20 v | 3,5a (TA) | 2,5 V, 4,5 V. | 80MOHM @ 3,5A, 4,5 V. | 1,5 V @ 250 ähm | 10 NC @ 4,5 V. | ± 8 v | 779 PF @ 10 V. | - - - | 800 MW (TA) | ||||||||||||||||
![]() | FDP8443 | 1.2300 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 40 v | 20A (TA), 80A (TC) | 10V | 3,5 MOHM @ 80A, 10V | 4v @ 250 ähm | 185 NC @ 10 V. | ± 20 V | 9310 PF @ 25 V. | - - - | 188W (TC) | ||||||||||||||||||
![]() | KSH45H11TF | 1.0000 | ![]() | 4431 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | KSH45 | 1,75 w | D-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 2.000 | 80 v | 8 a | 10 µA | PNP | 1v @ 400 mA, 8a | 40 @ 4a, 1V | 40 MHz | |||||||||||||||||||
![]() | Fqu3n40TU | 0,5300 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 70 | N-Kanal | 400 V | 2a (TC) | 10V | 3,4ohm @ 1a, 10V | 5 V @ 250 ähm | 7,5 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | ||||||||||||||||||
![]() | BC81825MTF | 0,0300 | ![]() | 289 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 310 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 25 v | 800 mA | 100na | Npn | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||
![]() | Fqu2n60ctltu | 0,3400 | ![]() | 5705 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 5 | N-Kanal | 600 V | 1,9a (TC) | 10V | 4.7ohm @ 950 mA, 10V | 4v @ 250 ähm | 12 NC @ 10 V | ± 30 v | 235 PF @ 25 V. | - - - | 2,5 W (TA), 44W (TC) | ||||||||||||||||
![]() | FDV302p | - - - | ![]() | 8849 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FDV30 | MOSFET (Metalloxid) | SOT-23 | Herunterladen | 0000.00.0000 | 1 | P-Kanal | 25 v | 120 Ma (TA) | 2,7 V, 4,5 V. | 10OHM @ 200 Ma, 4,5 V. | 1,5 V @ 250 ähm | 0,31 NC @ 4,5 V. | -8v | 11000 PF @ 10 V | - - - | 350 MW (TA) | |||||||||||||||||||
![]() | Fqu4n50TU | 0,7000 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 5.040 | N-Kanal | 500 V | 2.6a (TC) | 10V | 2,7OHM @ 1,3a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 2,5 W (TA), 45W (TC) | ||||||||||||||||||
![]() | FDMA1023PZ | - - - | ![]() | 3139 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA1023 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 3.7a | 72mohm @ 3,7a, 4,5 V. | 1,5 V @ 250 ähm | 12nc @ 4,5V | 655PF @ 10V | Logikpegel -tor | ||||||||||||||||||||
![]() | FDMB3800N | - - - | ![]() | 6599 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | FDMB3800 | MOSFET (Metalloxid) | 750 MW | 8-mlp, Mikrofet (3x1.9) | Herunterladen | Ear99 | 8542.39.0001 | 587 | 2 n-kanal (dual) | 30V | 4.8a | 40mohm @ 4,8a, 10V | 3v @ 250 ähm | 5.6nc @ 5v | 465PF @ 15V | Logikpegel -tor | ||||||||||||||||||||
![]() | FDMS8350L | 2.1700 | ![]() | 981 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power56 | Herunterladen | Rohs Nick Konform | Verkäfer undefiniert | 2156-FDMS8350L | Ear99 | 8541.29.0095 | 139 | N-Kanal | 40 v | 47A (TA), 290a (TC) | 4,5 V, 10 V. | 0,85 MOHM @ 47A, 10 V. | 3v @ 250 ähm | 242 NC @ 10 V | ± 20 V | 17500 PF @ 20 V | - - - | 2,7W (TA), 113W (TC) | ||||||||||||||||
![]() | FQI17N08TU | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 16,5a (TC) | 10V | 115mohm @ 8.25a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 450 PF @ 25 V. | - - - | 3.13W (TA), 65W (TC) | ||||||||||||||||||
![]() | BD678As | 0,2800 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 14 w | To-126-3 | Herunterladen | Verkäfer undefiniert | UnberÜHrt Ereichen | 2156-BD678AS-600039 | 1 | 60 v | 4 a | 500 ähm | PNP - Darlington | 2,8 V @ 40 Ma, 2a | 750 @ 2a, 3v | - - - | ||||||||||||||||||||||
![]() | FQPF6N40CF | 0,6400 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 400 V | 6a (TC) | 10V | 1ohm @ 3a, 10 V | 4v @ 250 ähm | 20 nc @ 10 v | ± 30 v | 625 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||
![]() | BC32825 | 0,0500 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 6.662 | 25 v | 800 mA | 100na | PNP | 700 mv @ 50 mA, 500 mA | 160 @ 100 mA, 1V | 100 MHz | ||||||||||||||||||||||
![]() | MPSA55 | - - - | ![]() | 7335 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92 (to-226) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | 60 v | 500 mA | 100na | PNP | 250mv @ 10 mA, 100 mA | 100 @ 100 mA, 1V | 50 MHz | ||||||||||||||||||||||
![]() | Fdn371n | 1.0000 | ![]() | 3691 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | FDN371 | MOSFET (Metalloxid) | Supersot-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | N-Kanal | 20 v | 2,5a (TA) | 2,5 V, 4,5 V. | 50 MOHM @ 2,5A, 4,5 V. | 1,5 V @ 250 ähm | 10.7 NC @ 4.5 V. | ± 12 V | 815 PF @ 10 V. | - - - | 500 MW (TA) | |||||||||||||||
![]() | MMBT2907AK | 1.0000 | ![]() | 1193 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | - - - | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 3.000 | 60 v | 600 mA | 10NA (ICBO) | PNP | 1,6 V @ 50 Ma, 500 mA | 100 @ 150 mA, 10V | 200 MHz | ||||||||||||||||||||||
![]() | 2N5771 | 1.0000 | ![]() | 2770 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 1 | 15 v | 200 ma | 10na | PNP | 600mv @ 5ma, 50 mA | 50 @ 10ma, 300mV | - - - | ||||||||||||||||||||||
![]() | FQA7N80C | 1.0100 | ![]() | 25 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 800 V | 7a (TC) | 10V | 1,9OHM @ 3,5a, 10V | 5 V @ 250 ähm | 35 NC @ 10 V | ± 30 v | 1680 PF @ 25 V. | - - - | 198W (TC) | ||||||||||||||||||
![]() | BC559B | - - - | ![]() | 3228 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 30 v | 100 ma | 15NA (ICBO) | PNP | 650 mv @ 5ma, 100 mA | 200 @ 2MA, 5V | 150 MHz | ||||||||||||||||||||||
![]() | HUF76407D3S | 0,2100 | ![]() | 19 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 60 v | 12a (TC) | 4,5 V, 10 V. | 92mohm @ 13a, 10V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | ||||||||||||||||||
![]() | FQAF19N20L | 1.0900 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3 Full Pack | MOSFET (Metalloxid) | To-3Pf | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 360 | N-Kanal | 200 v | 16a (TC) | 5v, 10V | 140Mohm @ 8a, 10V | 2v @ 250 ähm | 35 NC @ 5 V. | ± 20 V | 2200 PF @ 25 V. | - - - | 85W (TC) | ||||||||||||||||||
![]() | BD14010s | 1.0000 | ![]() | 6439 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | 1,25 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 250 | 80 v | 1,5 a | 100NA (ICBO) | PNP | 500 mv @ 50 mA, 500 mA | 63 @ 150 mA, 2V | - - - | ||||||||||||||||||||||
![]() | FDS4080N3 | 1.6600 | ![]() | 39 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-so | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 40 v | 13a (ta) | 10V | 10.5MOHM @ 13A, 10V | 5 V @ 250 ähm | 40 nc @ 10 v | ± 20 V | 1750 PF @ 20 V | - - - | 3W (TA) |
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