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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | Eingang | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Andere Namen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Strom - Sammler Cutoff (max) | NTC Thermistor | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FQI5N80TU | 0,8000 | ![]() | 993 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 800 V | 4.8a (TC) | 10V | 2,6OHM @ 2,4a, 10 V. | 5 V @ 250 ähm | 33 NC @ 10 V. | ± 30 v | 1250 PF @ 25 V. | - - - | 3.13W (TA), 140W (TC) | |||||||||||||||||||||||||
![]() | FMG2G300US60E | 35.8700 | ![]() | 5324 | 0.00000000 | Fairchild Semiconductor | - - - | Kasten | Veraltet | -40 ° C ~ 150 ° C (TJ) | Chassis -berg | 19 Uhr ha | 892 w | Standard | 19 Uhr ha | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2 | Halbbrücke | - - - | 600 V | 300 a | 2,7 V @ 15V, 300A | 250 µA | NEIN | ||||||||||||||||||||||||||||
![]() | HGTG11N120CND | - - - | ![]() | 3823 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 298 w | To-247 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 960 V, 11A, 10OHM, 15 V. | 70 ns | Npt | 1200 V | 43 a | 80 a | 2,4 V @ 15V, 11a | 950 µJ (EIN), 1,3mj (AUS) | 100 nc | 23ns/180ns | ||||||||||||||||||||||||||
![]() | HUF75645S3S | 0,8700 | ![]() | 375 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 100 v | 75a (TC) | 10V | 14mohm @ 75a, 10V | 4v @ 250 ähm | 238 NC @ 20 V | ± 20 V | 3790 PF @ 25 V. | - - - | 310W (TC) | |||||||||||||||||||||||||
![]() | FQP4N50 | 0,2700 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Nicht Anwendbar | UnberÜHrt Ereichen | 2156-FQP4N50-600039 | 1 | N-Kanal | 500 V | 3.4a (TC) | 10V | 2,7OHM @ 1,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 460 PF @ 25 V. | - - - | 70W (TC) | |||||||||||||||||||||||||
![]() | FGA40T65UQDF | 1,9000 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 231 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | 400 V, 40a, 6OHM, 15 V. | 89 ns | Npt | 650 V | 80 a | 120 a | 1,67 V @ 15V, 40a | 989 µj (EIN), 310 µJ (AUS) | 306 NC | 32ns/271ns | ||||||||||||||||||||||||||
![]() | IRFS240B | 0,7200 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 200 v | 12,8a (TC) | 10V | 180mohm @ 6.4a, 10V | 4v @ 250 ähm | 58 NC @ 10 V | ± 30 v | 1700 PF @ 25 V. | - - - | 73W (TC) | |||||||||||||||||||||||
![]() | NDH8302p | 0,4400 | ![]() | 66 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-TSOP (0,130 ", 3,30 mm Breit) | NDH8302 | MOSFET (Metalloxid) | 800 MW (TA) | Supersot ™ -8 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | 2 p-kanal (dual) | 20V | 2a (ta) | 130 MOHM @ 2A, 4,5 V. | 1V @ 250 ähm | 11nc @ 4,5V | 515PF @ 10V | - - - | ||||||||||||||||||||||||
![]() | IRFR210BTM | 0,2200 | ![]() | 17 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 2.500 | N-Kanal | 200 v | 2.7a (TC) | 10V | 1,5OHM @ 1,35A, 10V | 4v @ 250 ähm | 9.3 NC @ 10 V | ± 30 v | 225 PF @ 25 V. | - - - | 2,5 W (TA), 26W (TC) | |||||||||||||||||||||||
![]() | FQA7N90 | 1.4900 | ![]() | 939 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 900 V | 7.4a (TC) | 10V | 1,55 Ohm @ 3,7a, 10 V | 5 V @ 250 ähm | 59 NC @ 10 V | ± 30 v | 2280 PF @ 25 V. | - - - | 198W (TC) | |||||||||||||||||||||||||
![]() | HUF75339G3 | 1.1300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 300 | N-Kanal | 55 v | 75a (TC) | 10V | 12mohm @ 75a, 10V | 4v @ 250 ähm | 130 NC @ 20 V | ± 20 V | 2000 PF @ 25 V. | - - - | 200W (TC) | |||||||||||||||||||||||||
![]() | KSC3569Ytu | 1.0000 | ![]() | 6299 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | 15 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | 400 V | 2 a | 10 µA (ICBO) | Npn | 1v @ 100 mA, 500 mA | 40 @ 100 Ma, 5V | - - - | |||||||||||||||||||||||||||||
![]() | FCPF2250N80Z | 1.5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 216 | N-Kanal | 800 V | 2.6a (TC) | 10V | 2,25OHM @ 1,3a, 10 V. | 4,5 V @ 260 ähm | 14 NC @ 10 V | ± 20 V | 585 PF @ 100 V | - - - | 21.9W (TC) | ||||||||||||||||||||||||||
![]() | FDS6682 | - - - | ![]() | 4662 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 14a (ta) | 4,5 V, 10 V. | 7,5 MOHM @ 14A, 10V | 3v @ 250 ähm | 31 NC @ 5 V. | ± 20 V | 2310 PF @ 15 V | - - - | 1W (TA) | ||||||||||||||||||||||||||
![]() | FCP400N80Z | - - - | ![]() | 1882 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 126 | N-Kanal | 800 V | 14a (TC) | 10V | 400MOHM @ 5.5A, 10V | 4,5 V @ 1,1 Ma | 56 NC @ 10 V | ± 20 V | 2350 PF @ 1 V. | - - - | 195W (TC) | ||||||||||||||||||||||||||
![]() | FDP55N06 | - - - | ![]() | 6365 | 0.00000000 | Fairchild Semiconductor | Unifet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 60 v | 55a (TC) | 10V | 22mohm @ 27.5a, 10V | 4v @ 250 ähm | 37 NC @ 10 V. | ± 25 V | 1510 PF @ 25 V. | - - - | 114W (TC) | ||||||||||||||||||||||||||
![]() | RFD3055LESM | 0,2600 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1,255 | N-Kanal | 60 v | 11a (TC) | 5v | 107mohm @ 8a, 5V | 3v @ 250 ähm | 11.3 NC @ 10 V | ± 16 v | 350 PF @ 25 V. | - - - | 38W (TC) | |||||||||||||||||||||||||
![]() | FDMA3028n | 1.0000 | ![]() | 1705 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-VDFN-Exponiertebad | FDMA3028 | MOSFET (Metalloxid) | 700 MW | 6-microfet (2x2) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 n-kanal (dual) | 30V | 3.8a | 68mohm @ 3,8a, 4,5 V. | 1,5 V @ 250 ähm | 5.2nc @ 5v | 375PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FQI17N08TU | 0,5100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 80 v | 16,5a (TC) | 10V | 115mohm @ 8.25a, 10V | 4v @ 250 ähm | 15 NC @ 10 V | ± 25 V | 450 PF @ 25 V. | - - - | 3.13W (TA), 65W (TC) | |||||||||||||||||||||||||
![]() | HUF76013P3 | 0,2900 | ![]() | 5 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 20 v | 20A (TC) | 5v, 10V | 22mohm @ 20a, 10V | 3v @ 250 ähm | 17 NC @ 10 V | ± 20 V | 624 PF @ 20 V | - - - | 50W (TC) | |||||||||||||||||||||||||
![]() | FQP2P25 | - - - | ![]() | 3576 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 750 | P-Kanal | 250 V | 2.3a (TC) | 10V | 4OHM @ 1,15a, 10 V. | 5 V @ 250 ähm | 8,5 NC @ 10 V | ± 30 v | 250 PF @ 25 V. | - - - | 52W (TC) | |||||||||||||||||||||||||
![]() | FDS6294 | 0,4500 | ![]() | 27 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | FDS62 | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 13a (ta) | 4,5 V, 10 V. | 11.3mohm @ 13a, 10V | 3v @ 250 ähm | 14 NC @ 5 V | ± 20 V | 1205 PF @ 15 V | - - - | 3W (TA) | |||||||||||||||||||||||||
![]() | FQD3N40TF | 0,3700 | ![]() | 26 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 2.000 | N-Kanal | 400 V | 2a (TC) | 10V | 3,4ohm @ 1a, 10V | 5 V @ 250 ähm | 7,5 NC @ 10 V | ± 30 v | 230 PF @ 25 V. | - - - | 2,5 W (TA), 30W (TC) | |||||||||||||||||||||||||
![]() | TIP115 | 1.0000 | ![]() | 4881 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-220-3 | TIP115 | 2 w | To-220ab | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | 60 v | 2 a | 2ma | PNP - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | ||||||||||||||||||||||||||
![]() | IRFU024ATU | - - - | ![]() | 1398 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | IRFU024 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | 1 | - - - | ||||||||||||||||||||||||||||||||||||||
![]() | FQP5N30 | 0,4400 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | N-Kanal | 300 V | 5.4a (TC) | 10V | 900MOHM @ 2,7a, 10V | 5 V @ 250 ähm | 13 NC @ 10 V | ± 30 v | 430 PF @ 25 V. | - - - | 70W (TC) | |||||||||||||||||||||||||
![]() | FDU8780 | 0,2900 | ![]() | 81 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 75 | N-Kanal | 25 v | 35a (TC) | 4,5 V, 10 V. | 8,5 MOHM @ 35A, 10V | 2,5 V @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1440 PF @ 13 V | - - - | 50W (TC) | |||||||||||||||||||||||||
![]() | FDZ1827NZ | 0,1200 | ![]() | 20 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-XFBGA, WLCSP | FDZ1827 | MOSFET (Metalloxid) | 2W (TA) | 6-WLCSP (1,3x2,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (dual) gemeinsame Abfluss | 20V | 10a (ta) | 13mohm @ 1a, 4,5 V. | 1,2 V @ 250 ähm | 24nc @ 10v | 2055PF @ 10V | - - - | |||||||||||||||||||||||||||
![]() | KSC839cyta | 0,0200 | ![]() | 6430 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 250 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 1,957 | 30 v | 100 ma | 100NA (ICBO) | Npn | 400mv @ 1ma, 10 mA | 120 @ 2MA, 12V | 200 MHz | |||||||||||||||||||||||||||||
![]() | Fdd13an06a0_nl | - - - | ![]() | 6377 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 60 v | 9,9a (TA), 50A (TC) | 6 V, 10V | 13,5 MOHM @ 50A, 10V | 4v @ 250 ähm | 29 NC @ 10 V | ± 20 V | 1350 PF @ 25 V. | - - - | 115W (TC) |
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