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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Cutoff (max) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang Ausflussbasis (R1) Ausfluss - Emitterbasis (R2)
FJC1386QTF Fairchild Semiconductor FJC1386qtf 0,1000
RFQ
 ECAD 3 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) Oberflächenhalterung To-243aa 500 MW SOT-89-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 3.144 20 v 5 a 500NA (ICBO) PNP 1v @ 100 mA, 4a 120 @ 500 mA, 2V - - -
BCX799 Fairchild Semiconductor BCX799 0,0200
RFQ
 ECAD 3616 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet - - - K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 - - - Nicht Anwendbar Ear99 0000.00.0000 370 45 V 500 mA 10na PNP 600 mV @ 2,5 mA, 100 mA 80 @ 10ma, 1V - - -
BC337-25 Fairchild Semiconductor BC337-25 - - -
RFQ
 ECAD 9755 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92 Herunterladen Nicht Anwendbar 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.21.0075 1 45 V 800 mA 100na Npn 700 mv @ 50 mA, 500 mA 160 @ 100 mA, 1V 100 MHz
FQD4N25TM Fairchild Semiconductor Fqd4n25tm 0,2600
RFQ
 ECAD 27 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 250 V 3a (TC) 10V 1,75OHM @ 1,5A, 10 V. 5 V @ 250 ähm 5.6 NC @ 10 V ± 30 v 200 PF @ 25 V. - - - 2,5 W (TA), 37W (TC)
FDZ202P Fairchild Semiconductor FDZ202p 0,2700
RFQ
 ECAD 152 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 12-WFBGA MOSFET (Metalloxid) 12-bga (2x2,5) Herunterladen Rohs Nick Konform Ear99 8541.29.0095 3.000 P-Kanal 20 v 5.5a (TA) 2,5 V, 4,5 V. 45mohm @ 5,5a, 4,5 V. 1,5 V @ 250 ähm 13 NC @ 4,5 V. ± 12 V 884 PF @ 10 V. - - - 2W (TA)
FCU4300N80Z Fairchild Semiconductor FCU4300N80Z 0,6000
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor Superfet® II Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen Ear99 8542.39.0001 1 N-Kanal 800 V 1,6a (TC) 10V 4.3OHM @ 800 mA, 10 V. 4,5 V @ 160 ähm 8.8 NC @ 10 V ± 20 V 355 PF @ 100 V - - - 27,8W (TC)
BC369 Fairchild Semiconductor BC369 1.0000
RFQ
 ECAD 8168 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 625 MW To-92 (to-226) Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.000 20 v 1 a 10 µA (ICBO) PNP 500mv @ 100 mA, 1a 85 @ 500 mA, 1V 65 MHz
FQI6N50TU Fairchild Semiconductor FQI6N50TU 0,6100
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 500 V 5.5a (TC) 10V 1,3OHM @ 2,8a, 10V 5 V @ 250 ähm 22 NC @ 10 V. ± 30 v 790 PF @ 25 V. - - - 3.13W (TA), 130 W (TC)
FQU1N80TU Fairchild Semiconductor Fqu1n80TU - - -
RFQ
 ECAD 9472 0.00000000 Fairchild Semiconductor QFET® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen Ear99 8542.39.0001 1 N-Kanal 800 V 1a (TC) 10V 20ohm @ 500 mA, 10V 5 V @ 250 ähm 7.2 NC @ 10 V ± 30 v 195 PF @ 25 V. - - - 2,5 W (TA), 45W (TC)
FQPF12N60T Fairchild Semiconductor FQPF12N60T 1.0500
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 N-Kanal 600 V 5.8a (TC) 10V 700 MOHM @ 2,9a, 10V 5 V @ 250 ähm 54 NC @ 10 V ± 30 v 1900 PF @ 25 V. - - - 55W (TC)
FQA34N20L Fairchild Semiconductor Fqa34n20l 1.3900
RFQ
 ECAD 669 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 MOSFET (Metalloxid) To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 30 N-Kanal 200 v 34a (TC) 5v, 10V 75mohm @ 17a, 10V 2v @ 250 ähm 72 NC @ 5 V. ± 20 V 3900 PF @ 25 V. - - - 210W (TC)
FDMS7578 Fairchild Semiconductor FDMS7578 - - -
RFQ
 ECAD 7144 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn MOSFET (Metalloxid) 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 N-Kanal 25 v 17a (ta), 28a (TC) 4,5 V, 10 V. 5.8mohm @ 17a, 10V 3v @ 250 ähm 25 NC @ 10 V ± 20 V 1625 PF @ 13 V. - - - 2,5 W (TA), 33W (TC)
BDX33B Fairchild Semiconductor BDX33B 0,5500
RFQ
 ECAD 1555 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -65 ° C ~ 150 ° C (TJ) K. Loch To-220-3 70 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 407 80 v 10 a 500 ähm NPN - Darlington 2,5 V @ 6ma, 3a 750 @ 3a, 3v - - -
KSB744YSTU Fairchild Semiconductor KSB744YSTU 0,1200
RFQ
 ECAD 6388 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-225aa, to-126-3 1 w To-126-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0075 1.918 45 V 3 a 1 µA (ICBO) PNP 2v @ 150 mA, 1,5a 160 @ 500 mA, 5V 45 MHz
BC638TF Fairchild Semiconductor BC638TF 0,0200
RFQ
 ECAD 3031 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 1 w To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 1.695 60 v 1 a 100NA (ICBO) PNP 500 mv @ 50 mA, 500 mA 40 @ 150 mA, 2V 100 MHz
FDS8934A Fairchild Semiconductor FDS8934a 0,6700
RFQ
 ECAD 52 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) FDS89 MOSFET (Metalloxid) 900 MW 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.500 2 p-kanal (dual) 20V 4a 55mohm @ 4a, 4,5 V. 1V @ 250 ähm 28nc @ 5v 1130pf @ 10v Logikpegel -tor
TN2219A Fairchild Semiconductor TN2219A 0,2500
RFQ
 ECAD 5260 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 1 w To-226-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 902 40 v 1 a 10NA (ICBO) Npn 1v @ 50 mA, 500 mA 100 @ 150 mA, 10V - - -
FDP75N08A Fairchild Semiconductor FDP75N08A - - -
RFQ
 ECAD 9431 0.00000000 Fairchild Semiconductor Unifet ™ Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen Ear99 8542.39.0001 1 N-Kanal 75 V 75a (TC) 10V 11mohm @ 37,5a, 10V 4v @ 250 ähm 104 NC @ 10 V ± 20 V 4468 PF @ 25 V. - - - 137W (TC)
BDW94 Fairchild Semiconductor Bdw94 0,3700
RFQ
 ECAD 2 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-220-3 80 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 200 45 V 12 a 1ma PNP - Darlington 3v @ 100 mA, 10a 750 @ 5a, 3v - - -
FDZ663P Fairchild Semiconductor FDZ663p 0,2700
RFQ
 ECAD 60 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 4-XFBGA, WLCSP MOSFET (Metalloxid) 4-WLCSP (0,8x0,8) Herunterladen Verkäfer undefiniert UnberÜHrt Ereichen 2156-FDZ663P-600039 1 P-Kanal 20 v 2.7a (TA) 1,5 V, 4,5 V. 134mohm @ 2a, 4,5 V. 1,2 V @ 250 ähm 8,2 NC @ 4,5 V. ± 8 v 525 PF @ 10 V. - - - 1,3W (TA)
KSA1175YBU Fairchild Semiconductor KSA1175YBU 0,0200
RFQ
 ECAD 4544 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 Kurzkörper 250 MW To-92s Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 9.954 50 v 150 Ma 100NA (ICBO) PNP 300mv @ 10 mA, 100 mA 120 @ 1ma, 6v 180 MHz
FQPF2N30 Fairchild Semiconductor Fqpf2n30 0,2900
RFQ
 ECAD 4 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-220-3 Full Pack MOSFET (Metalloxid) To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 300 V 1.34a (TC) 10V 3,7OHM @ 670 mA, 10V 5 V @ 250 ähm 5 NC @ 10 V ± 30 v 130 PF @ 25 V. - - - 16W (TC)
FDS6162N3 Fairchild Semiconductor FDS6162N3 1.7600
RFQ
 ECAD 33 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-so Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 20 v 21a (ta) 2,5 V, 4,5 V. 4,5 MOHM @ 21A, 4,5 V. 1,5 V @ 250 ähm 73 NC @ 4,5 V. ± 12 V 5521 PF @ 10 V - - - 3W (TA)
KSD1408YTU Fairchild Semiconductor KSD1408Ytu 0,5000
RFQ
 ECAD 13 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv 150 ° C (TJ) K. Loch To-220-3 Full Pack 25 w To-220f-3 Herunterladen Ear99 8542.39.0001 598 80 v 4 a 30 µA (ICBO) Npn 1,5 V @ 300 Ma, 3a 120 @ 500 mA, 5V 8MHz
BC558CTA Fairchild Semiconductor BC558CTA 0,0200
RFQ
 ECAD 1606 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 500 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 11.189 30 v 100 ma 15NA (ICBO) PNP 650 mv @ 5ma, 100 mA 420 @ 2MA, 5V 150 MHz
FQD3N40TM Fairchild Semiconductor FQD3N40TM 0,3200
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor QFET® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 400 V 2a (TC) 10V 3,4ohm @ 1a, 10V 5 V @ 250 ähm 7,5 NC @ 10 V ± 30 v 230 PF @ 25 V. - - - 2,5 W (TA), 30W (TC)
FDB8160-F085 Fairchild Semiconductor FDB8160-F085 1.4000
RFQ
 ECAD 9 0.00000000 Fairchild Semiconductor Automotive, AEC-Q101, Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab FDB816 MOSFET (Metalloxid) To-263ab Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) Reichweiite Betroffen Ear99 8541.29.0095 1 N-Kanal 30 v 80A (TC) 10V 1,8 MOHM @ 80A, 10V 4v @ 250 ähm 243 NC @ 10 V ± 20 V 11825 PF @ 15 V - - - 254W (TC)
FDMS8095AC Fairchild Semiconductor FDMS8095AC - - -
RFQ
 ECAD 4842 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powerwdfn FDMS8095 MOSFET (Metalloxid) 2.3W 8-mlp (5x6), Power56 Herunterladen Ear99 8542.39.0001 1 N und p-kanal 150 v 6.2a, 1a 30mohm @ 6.2a, 10V 4v @ 250 ähm 30nc @ 10v 2020pf @ 75V - - -
FJX4004RTF Fairchild Semiconductor FJX4004RTF 0,0500
RFQ
 ECAD 9275 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet Oberflächenhalterung SC-70, SOT-323 FJX400 200 MW SC-70-3 (SOT323) Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 971 50 v 100 ma 100NA (ICBO) PNP - VoreInensmen 300 mV @ 500 µA, 10 mA 68 @ 5ma, 5v 200 MHz 47 Kohms 47 Kohms
BC547A Fairchild Semiconductor BC547A 0,0200
RFQ
 ECAD 15 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 500 MW To-92-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 15.076 45 V 100 ma 15NA (ICBO) Npn 600mv @ 5ma, 100 mA 110 @ 2MA, 5V 300 MHz
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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