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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | FDC6310p | - - - | ![]() | 9172 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6310 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 2.2a | 125mohm @ 2,2a, 4,5 V. | 1,5 V @ 250 ähm | 5.2nc @ 4.5V | 337PF @ 10V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FDMS7692A | - - - | ![]() | 9891 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 13,5a (TA), 28a (TC) | 4,5 V, 10 V. | 8mohm @ 13a, 10V | 3v @ 250 ähm | 22 NC @ 10 V. | ± 20 V | 1350 PF @ 15 V | - - - | 2,5 W (TA), 27W (TC) | ||||||||||||||||||||||||||
![]() | HUF75345p3_NS2552 | 1.0000 | ![]() | 4961 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||||||||
![]() | BC547CBU | 0,0400 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 8,266 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | ||||||||||||||||||||||||||||||
![]() | FCP260N60E | 1.6600 | ![]() | 200 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 200 | N-Kanal | 600 V | 15a (TC) | 10V | 260 MOHM @ 7,5A, 10V | 3,5 V @ 250 ähm | 62 NC @ 10 V | ± 20 V | 2500 PF @ 25 V | - - - | 156W (TC) | ||||||||||||||||||||||||||
![]() | FDD8896-F085 | 0,4500 | ![]() | 973 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 17a (ta), 94a (TC) | 4,5 V, 10 V. | 5.7mohm @ 35a, 10V | 2,5 V @ 250 ähm | 60 nc @ 10 v | ± 20 V | 2525 PF @ 15 V | - - - | 80W (TC) | ||||||||||||||||||||||||||
![]() | J113 | 1.0000 | ![]() | 3356 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | 0000.00.0000 | 1 | N-Kanal | - - - | 35 V | 2 ma @ 15 v | 500 mV @ 1 µA | 100 Ohm | ||||||||||||||||||||||||||||||||
![]() | Fqpf2n80ydtu | 1.1400 | ![]() | 725 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 800 V | 1,5a (TC) | 10V | 6.3OHM @ 750 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 550 PF @ 25 V. | - - - | 35W (TC) | ||||||||||||||||||||||||||
![]() | FDS6298 | 0,5200 | ![]() | 265 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 574 | N-Kanal | 30 v | 13a (ta) | 4,5 V, 10 V. | 9mohm @ 13a, 10V | 3v @ 250 ähm | 14 NC @ 5 V | ± 20 V | 1108 PF @ 15 V | - - - | 3W (TA) | ||||||||||||||||||||||||||
![]() | FDMS3606s | - - - | ![]() | 7384 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | FDMS3606 | MOSFET (Metalloxid) | 1W | 8-PQFN (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 N-Kanal (Dual) Asymmetrisch | 30V | 13a, 27a | 8mohm @ 13a, 10V | 2,7 V @ 250 ähm | 29nc @ 10v | 1785PF @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | FGA50S110P | 1.5400 | ![]() | 45 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | Standard | 300 w | To-3pn | Herunterladen | Ear99 | 8542.39.0001 | 1 | - - - | TRABENFELD STOPP | 1100 v | 50 a | 120 a | 2,6 V @ 15V, 50A | - - - | 195 NC | - - - | |||||||||||||||||||||||||||
![]() | FCH76N60N | 15.1300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8541.29.0095 | 20 | N-Kanal | 600 V | 76a (TC) | 10V | 36mohm @ 38a, 10V | 4v @ 250 ähm | 285 NC @ 10 V | ± 30 v | 12385 PF @ 100 V | - - - | 543W (TC) | ||||||||||||||||||||||||||
![]() | J105 | - - - | ![]() | 9982 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | - - - | 25 v | 500 mA @ 15 V | 4,5 V @ 1 µA | 3 Ohm | |||||||||||||||||||||||||||||||
![]() | 2N7002va | 0,2800 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | 2N7002 | MOSFET (Metalloxid) | 250 MW | SOT-563F | Herunterladen | Ear99 | 8541.21.0095 | 1.078 | 2 n-kanal (dual) | 60 v | 280 Ma | 7.5OHM @ 50 Ma, 5V | 2,5 V @ 250 ähm | - - - | 50pf @ 25v | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | ISL9N7030BLS3ST | 0,7300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | To-263ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 800 | N-Kanal | 30 v | 75a (TC) | 4,5 V, 10 V. | 9mohm @ 75a, 10V | 3v @ 250 ähm | 68 NC @ 10 V. | ± 20 V | 2600 PF @ 15 V | - - - | 100 W (TC) | |||||||||||||||||||||||
![]() | FDFC3N108 | 0,4100 | ![]() | 98 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | MOSFET (Metalloxid) | Supersot ™ -6 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 20 v | 3a (ta) | 2,5 V, 4,5 V. | 70 Mohm @ 3a, 4,5 V. | 1,5 V @ 250 ähm | 4,9 NC @ 4,5 V. | ± 12 V | 355 PF @ 10 V. | Schottky Diode (Isolier) | - - - | |||||||||||||||||||||||||
![]() | SGR20N40LTM | 1.2500 | ![]() | 2783 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -40 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | SGR20 | Standard | 45 w | To-252, (d-pak) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | - - - | Graben | 400 V | 150 a | 8v @ 4,5 V, 150a | - - - | - - - | |||||||||||||||||||||||||||
![]() | Fdn363n | 0,1700 | ![]() | 53 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | MOSFET (Metalloxid) | Supersot ™ -3 | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 100 v | 1a (TC) | 6 V, 10V | 240MOHM @ 1a, 10V | 4v @ 250 ähm | 5.2 NC @ 10 V | ± 20 V | 200 PF @ 25 V. | - - - | 500 MW (TC) | |||||||||||||||||||||||
![]() | FDMC15N06 | - - - | ![]() | 1274 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 55 v | 2,4a (TA), 15a (TC) | 10V | 900mohm @ 15a, 10V | 4v @ 250 ähm | 11,5 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,3 W (TA), 35 W (TC) | ||||||||||||||||||||||||||
![]() | FQB44N10TM | 1.0000 | ![]() | 8553 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 43,5a (TC) | 10V | 39mohm @ 21.75a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 3,75W (TA), 146W (TC) | ||||||||||||||||||||||||||
![]() | FCPF260N65FL1 | 1.1400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 15a (TC) | 10V | 260 MOHM @ 7,5A, 10V | 5v @ 1,5 mA | 60 nc @ 10 v | ± 20 V | 2340 PF @ 100 V | - - - | 36W (TC) | ||||||||||||||||||||||||||
![]() | TIP115TU | 0,4500 | ![]() | 940 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 60 v | 2 a | 2ma | PNP - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | |||||||||||||||||||||||||||||
![]() | FDMA8884 | 1.0000 | ![]() | 6776 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 6,5a (TA), 8a (TC) | 4,5 V, 10 V. | 23mohm @ 6.5a, 10V | 3v @ 250 ähm | 7,5 NC @ 10 V | ± 20 V | 450 PF @ 15 V | - - - | 1,9W (TA) | ||||||||||||||||||||||||||
![]() | FDMS0348 | 0,2100 | ![]() | 63 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-mlp (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 14A (TA), 35A (TC) | 4,5 V, 10 V. | 7mohm @ 14a, 10V | 3v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1590 PF @ 15 V | - - - | 2,5 W (TA), 50 W (TC) | ||||||||||||||||||||||||||
![]() | IRFR220BTM | 0,1800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.760 | N-Kanal | 200 v | 4.6a (TC) | 10V | 800 MOHM @ 2,3a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 30 v | 390 PF @ 25 V. | - - - | 2,5 W (TA), 40 W (TC) | |||||||||||||||||||||||
![]() | MJD340 | - - - | ![]() | 9109 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | Dpak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | 300 V | 500 mA | 100 µA | Npn | - - - | 30 @ 50 Ma, 10 V | - - - | |||||||||||||||||||||||||||||
![]() | KSP06TA-FS | - - - | ![]() | 1406 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | |||||||||||||||||||||||||||
![]() | HUF75329D3 | 0,6100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 55 v | 20A (TC) | 10V | 26mohm @ 20a, 10V | 4v @ 250 ähm | 65 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | |||||||||||||||||||||||||
![]() | PN5434 | 0,1500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 350 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 2.000 | N-Kanal | 30pf @ 10v (VGS) | 25 v | 30 mA @ 15 V | 1 V @ 3 na | 10 Ohm | ||||||||||||||||||||||||||||||
![]() | 2N7002t | - - - | ![]() | 2887 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | 2N7002 | MOSFET (Metalloxid) | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 60 v | 115 Ma (TA) | 5v, 10V | 7.5OHM @ 50 Ma, 5V | 2v @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 200 MW (TA) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerlager