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Bild Produktnummer Bestandteil (USD) Menge ECAD Menge Verfügbar Gewicht (kg) Mfr Serie Paket Produktstatus Biebstemperatur Montagetyp Paket / Herbst Grundproduktnummer Eingabetyp Technologie Kraft - Max LEEFERANTENGERATEPAKET Datenblatt ROHS -STATUS FeuchtigitesempfindlichKeit (MSL) Status Erreichen Andere Namen Eccn Htsus Standardpaket Konfiguration FET -Typ Testedingung ABTROPFEN SIE ZUR Quellspannung (VDSS) Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C Antriebsspannung (Maximale RDS an, min RDS EINS) Rds on (max) @ id, vgs Vgs (th) (max) @ id Gate Ladung (qg) (max) @ vgs VGS (max) Eingangskapazität (CISS) (max) @ vds FET -Fungion Leistungsdissipation (max) IGBT -Typ Spannung - Zusammenbruch des Sammlers Emitter (max) Strom - Sammler (IC) (max) Strom - Sammler Gepulst (ICM) VCE (ON) (max) @ vge, IC Energie Wechseln Torladung TD (EIN/AUS) BEI 25 ° C Spannung - Breakdown (V (BR) GSS) Strom - Drain (IDSS) @ VDS (VGS = 0) Spannung - Cutoff (VGS OFF) @ id Strom - Sammler Cutoff (max) Ausfluss - rds (on) Transistortyp VCE -Sättigung (max) @ ib, ic Geilstromverstärkung (HFE) (min) @ ic, vce Frequenz - übergang
FQAF6N80 Fairchild Semiconductor FQAF6N80 1.6000
RFQ
 ECAD 892 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3 Full Pack MOSFET (Metalloxid) To-3Pf Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 360 N-Kanal 800 V 4.4a (TC) 10V 1,95OHM @ 2,2a, 10 V. 5 V @ 250 ähm 31 NC @ 10 V ± 30 v 1500 PF @ 25 V. - - - 90W (TC)
FDFS2P103 Fairchild Semiconductor FDFS2P103 0,4300
RFQ
 ECAD 29 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Soic (0,154 ", 3,90 mm Breit) MOSFET (Metalloxid) 8-soic Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.500 P-Kanal 30 v 5.3a (ta) 4,5 V, 10 V. 59mohm @ 5.3a, 10V 3v @ 250 ähm 8 NC @ 5 V ± 25 V 528 PF @ 15 V Schottky Diode (Isolier) 900 MW (TA)
BC850BMTF Fairchild Semiconductor BC850BMTF 0,0600
RFQ
 ECAD 102 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 310 MW SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0075 3.000 45 V 100 ma 15NA (ICBO) Npn 600mv @ 5ma, 100 mA 200 @ 2MA, 5V 300 MHz
FDU6680 Fairchild Semiconductor FDU6680 0,6000
RFQ
 ECAD 82 0.00000000 Fairchild Semiconductor Powertrench® Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch TO-251-3 Kurze Leads, ipak, to-251aaa MOSFET (Metalloxid) I-Pak Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.800 N-Kanal 30 v 12a (ta), 46a (TC) 4,5 V, 10 V. 10mohm @ 12a, 10V 3v @ 250 ähm 18 NC @ 5 V. ± 20 V 1230 PF @ 15 V - - - 3,3 W (TA), 56 W (TC)
FJA3835TU Fairchild Semiconductor FJA3835TU 0,6100
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch TO-3P-3, SC-65-3 80 w To-3p Herunterladen ROHS3 -KONFORM Ear99 8541.29.0075 30 120 v 8 a 100 µA (ICBO) Npn 500mv @ 300 mA, 3a 120 @ 3a, 4V 30 MHz
FQI2N30TU Fairchild Semiconductor FQI2N30TU 0,4100
RFQ
 ECAD 7 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch To-262-3 lange leitet, i²pak, to-262aaa MOSFET (Metalloxid) I2pak (to-262) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.000 N-Kanal 300 V 2.1a (TC) 10V 3,7OHM @ 1,05A, 10 V. 5 V @ 250 ähm 5 NC @ 10 V ± 30 v 130 PF @ 25 V. - - - 3.13W (TA), 40 W (TC)
2N5639 Fairchild Semiconductor 2N5639 0,3200
RFQ
 ECAD 21 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -65 ° C ~ 150 ° C (TJ) K. Loch Bis-226-3, Bis 92-3 (to-226aa), Leads 310 MW To-92 (to-226) Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 2.000 N-Kanal 30 v 10pf @ 12v (VGS) 35 V 25 mA @ 20 V 60 Ohm
SGR15N40LTF Fairchild Semiconductor SGR15N40LTF - - -
RFQ
 ECAD 2207 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -40 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 SGR15 Standard 45 w To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.000 - - - Graben 400 V 130 a 8v @ 4,5 V, 130a - - - - - -
HUFA76633S3ST Fairchild Semiconductor HUFA76633S3ST 1.0100
RFQ
 ECAD 22 0.00000000 Fairchild Semiconductor Ultrafet ™ Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 800 N-Kanal 100 v 39a (TC) 4,5 V, 10 V. 35mohm @ 39a, 10V 3v @ 250 ähm 67 NC @ 10 V ± 16 v 1820 PF @ 25 V. - - - 145W (TC)
FDW2512NZ Fairchild Semiconductor FDW2512NZ 0,5500
RFQ
 ECAD 213 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-TSSOP (0,173 ", 4,40 mm Breit) FDW25 MOSFET (Metalloxid) 1.6W 8-tssop Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 2 n-kanal (dual) 20V 6a 28mohm @ 6a, 4,5 V. 1,5 V @ 250 ähm 12nc @ 4,5V 670PF @ 10V Logikpegel -tor
FDN361AN Fairchild Semiconductor Fdn361an - - -
RFQ
 ECAD 8410 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 MOSFET (Metalloxid) SOT-23-3 Herunterladen ROHS3 -KONFORM Ear99 8541.21.0095 3.000 N-Kanal 30 v 1,8a (ta) 4,5 V, 10 V. 100MOHM @ 1,8a, 10 V. 3v @ 250 ähm 4 NC @ 5 V. ± 20 V 220 PF @ 15 V - - - 500 MW (TA)
FDZ209N Fairchild Semiconductor Fdz209n 0,8700
RFQ
 ECAD 20 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 12-WFBGA MOSFET (Metalloxid) 12-bga (2x2,5) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 3.000 N-Kanal 60 v 4a (ta) 5v 80Mohm @ 4a, 5V 3v @ 250 ähm 9 NC @ 5 V ± 20 V 657 PF @ 30 V - - - 2W (TA)
FDMS7680 Fairchild Semiconductor FDMS7680 - - -
RFQ
 ECAD 1255 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn MOSFET (Metalloxid) 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 14a (ta), 28a (TC) 4,5 V, 10 V. 6,9 MOHM @ 14A, 10V 3v @ 250 ähm 28 NC @ 10 V ± 20 V 1850 PF @ 15 V - - - 2,5 W (TA), 33W (TC)
FGA50S110P Fairchild Semiconductor FGA50S110P 1.5400
RFQ
 ECAD 45 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch TO-3P-3, SC-65-3 Standard 300 w To-3pn Herunterladen Ear99 8542.39.0001 1 - - - TRABENFELD STOPP 1100 v 50 a 120 a 2,6 V @ 15V, 50A - - - 195 NC - - -
J112 Fairchild Semiconductor J112 - - -
RFQ
 ECAD 4979 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen 0000.00.0000 27 N-Kanal - - - 35 V 5 ma @ 15 V 1 V @ 1 µA 50 Ohm
FDMS7692A Fairchild Semiconductor FDMS7692A - - -
RFQ
 ECAD 9891 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn MOSFET (Metalloxid) 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 N-Kanal 30 v 13,5a (TA), 28a (TC) 4,5 V, 10 V. 8mohm @ 13a, 10V 3v @ 250 ähm 22 NC @ 10 V. ± 20 V 1350 PF @ 15 V - - - 2,5 W (TA), 27W (TC)
J113 Fairchild Semiconductor J113 1.0000
RFQ
 ECAD 3356 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) K. Loch To-226-3, bis 92-3 (to-226aa) 625 MW To-92-3 Herunterladen 0000.00.0000 1 N-Kanal - - - 35 V 2 ma @ 15 v 500 mV @ 1 µA 100 Ohm
FDB029N06 Fairchild Semiconductor FDB029N06 4.1400
RFQ
 ECAD 5 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-263-3, d²pak (2 Leitete + Tab), to-263ab MOSFET (Metalloxid) D2pak (to-263) Herunterladen Ear99 8542.39.0001 79 N-Kanal 60 v 120a (TC) 10V 3.1MOHM @ 75A, 10V 4,5 V @ 250 ähm 151 NC @ 10 V ± 20 V 9815 PF @ 25 V. - - - 231W (TC)
FDD4141 Fairchild Semiconductor FDD4141 - - -
RFQ
 ECAD 3202 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen 0000.00.0000 1 P-Kanal 40 v 10.8a (TA), 50A (TC) 4,5 V, 10 V. 12.3mohm @ 12.7a, 10V 3v @ 250 ähm 50 nc @ 10 v ± 20 V 2775 PF @ 20 V - - - 2,4W (TA), 69W (TC)
FDMS3606S Fairchild Semiconductor FDMS3606s - - -
RFQ
 ECAD 7384 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung 8-Powertdfn FDMS3606 MOSFET (Metalloxid) 1W 8-PQFN (5x6) Herunterladen Ear99 8542.39.0001 1 2 N-Kanal (Dual) Asymmetrisch 30V 13a, 27a 8mohm @ 13a, 10V 2,7 V @ 250 ähm 29nc @ 10v 1785PF @ 15V Logikpegel -tor
FQH44N10-F133 Fairchild Semiconductor FQH44N10-F133 - - -
RFQ
 ECAD 4726 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-247-3 MOSFET (Metalloxid) To-247 - - - 2156-FQH44N10-F133 1 N-Kanal 100 v 48a (TC) 10V 39mohm @ 24a, 10V 4v @ 250 ähm 62 NC @ 10 V ± 25 V 1800 PF @ 25 V. - - - 180W (TC)
FDP023N08B-F102 Fairchild Semiconductor FDP023N08B-F102 - - -
RFQ
 ECAD 3201 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 - - - 2156-FDP023N08B-F102 1 N-Kanal 75 V 120a (TC) 10V 2,35 MOHM @ 75A, 10V 3,8 V @ 250 ähm 195 NC @ 10 V. ± 20 V 13765 PF @ 37,5 V. - - - 245W (TC)
FDD5N50TF Fairchild Semiconductor FDD5N50TF 0,2900
RFQ
 ECAD 1986 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.29.0095 100 N-Kanal 500 V 4a (TC) 10V 1,4ohm @ 2a, 10 V. 5 V @ 250 ähm 15 NC @ 10 V ± 30 v 640 PF @ 25 V. - - - 40W (TC)
HUFA76445P3 Fairchild Semiconductor HUFA76445P3 0,9900
RFQ
 ECAD 518 0.00000000 Fairchild Semiconductor Ultrafet ™ Rohr Veraltet -55 ° C ~ 175 ° C (TJ) K. Loch To-220-3 MOSFET (Metalloxid) To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 400 N-Kanal 60 v 75a (TC) 4,5 V, 10 V. 6,5 MOHM @ 75A, 10V 3v @ 250 ähm 150 NC @ 10 V. ± 16 v 4965 PF @ 25 V. - - - 310W (TC)
FDD6682 Fairchild Semiconductor FDD6682 0,9500
RFQ
 ECAD 28 0.00000000 Fairchild Semiconductor Powertrench® Schüttgut Veraltet -55 ° C ~ 175 ° C (TJ) Oberflächenhalterung To-252-3, dpak (2 Leitet + Tab), SC-63 MOSFET (Metalloxid) To-252, (d-pak) Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 2.500 N-Kanal 30 v 75A (TA) 4,5 V, 10 V. 6,2 Mohm @ 17a, 10V 3v @ 250 ähm 31 NC @ 5 V. ± 20 V 2400 PF @ 15 V - - - 71W (TA)
IRFNL210BTA Fairchild Semiconductor IRFNL210BTA 0,1100
RFQ
 ECAD 556 0.00000000 Fairchild Semiconductor * Schüttgut Aktiv IRFNL210 - - - - - - Nicht Anwendbar 1 (unbegrenzt) Verkäfer undefiniert Ear99 8542.39.0001 1 - - -
MMBTA14 Fairchild Semiconductor MMBTA14 - - -
RFQ
 ECAD 7671 0.00000000 Fairchild Semiconductor - - - Schüttgut Aktiv -55 ° C ~ 150 ° C (TJ) Oberflächenhalterung To-236-3, sc-59, SOT-23-3 350 MW SOT-23-3 Herunterladen ROHS3 -KONFORM 1 (unbegrenzt) UnberÜHrt Ereichen Ear99 8541.210075 3.000 30 v 1.2 a 100NA (ICBO) NPN - Darlington 1,5 V @ 100 µA, 100 mA 20000 @ 100ma, 5V 125 MHz
BDW93 Fairchild Semiconductor Bdw93 0,5200
RFQ
 ECAD 1 0.00000000 Fairchild Semiconductor - - - Schüttgut Veraltet 150 ° C (TJ) K. Loch To-220-3 80 w To-220-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 1.200 45 V 12 a 1ma NPN - Darlington 3v @ 100 mA, 10a 750 @ 5a, 3v - - -
KSC5039FTU Fairchild Semiconductor KSC5039ftu 0,6000
RFQ
 ECAD 951 0.00000000 Fairchild Semiconductor - - - Rohr Veraltet 150 ° C (TJ) K. Loch To-220-3 Full Pack 30 w To-220f-3 Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 50 400 V 5 a 10 µA (ICBO) Npn 1,5 V @ 500 Ma, 2,5a 10 @ 300 mA, 5V 10 MHz
FQAF5N90 Fairchild Semiconductor FQAF5N90 1.1200
RFQ
 ECAD 1764 0.00000000 Fairchild Semiconductor QFET® Rohr Veraltet -55 ° C ~ 150 ° C (TJ) K. Loch TO-3P-3 Full Pack MOSFET (Metalloxid) To-3Pf Herunterladen ROHS3 -KONFORM Ear99 8541.29.0095 220 N-Kanal 900 V 4.1a (TC) 10V 2,3OHM @ 2,05A, 10 V. 5 V @ 250 ähm 40 nc @ 10 v ± 30 v 1550 PF @ 25 V. - - - 90W (TC)
  • Daily average RFQ Volume

    2000+

    Täglich durchschnittliches RFQ -Volumen

  • Standard Product Unit

    30.000.000

    Standardprodukteinheit

  • Worldwide Manufacturers

    2800+

    Weltweite Hersteller

  • In-stock Warehouse

    15.000 m2

    Lagerhaus

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AD9208BBPZ-3000

196-LFBGA Expositionspad

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