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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Eingabetyp | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | Konfiguration | FET -Typ | Testedingung | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min RDS EINS) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Reverse Recovery Time (TRR) | IGBT -Typ | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Gepulst (ICM) | VCE (ON) (max) @ vge, IC | Energie Wechseln | Torladung | TD (EIN/AUS) BEI 25 ° C | Spannung - Breakdown (V (BR) GSS) | Strom - Drain (IDSS) @ VDS (VGS = 0) | Spannung - Cutoff (VGS OFF) @ id | Strom - Sammler Cutoff (max) | Ausfluss - rds (on) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang | Ausflussbasis (R1) | Ausfluss - Emitterbasis (R2) |
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![]() | Si9934dy | 0,2400 | ![]() | 22 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI9934 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 5.000 | 2 p-kanal (dual) | 20V | 5a (ta) | 50mohm @ 5a, 4,5 V. | 1,5 V @ 250 ähm | 16nc @ 4,5V | 1015PF @ 10V | - - - | |||||||||||||||||||||||||||
![]() | Si4920dy | 0,3700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | SI4920 | MOSFET (Metalloxid) | 900 MW (TA) | 8-soic | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0095 | 2.500 | 2 n-kanal (dual) | 30V | 6a (ta) | 28mohm @ 6a, 10V | 3v @ 250 ähm | 13nc @ 5v | 830pf @ 15V | Logikpegel -tor | |||||||||||||||||||||||||||
![]() | HGTG12N60C3D | - - - | ![]() | 8136 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -40 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | HGTG12N60 | Standard | 104 w | To-247-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | Reichweiite Betroffen | Ear99 | 0000.00.0000 | 1 | - - - | 42 ns | - - - | 600 V | 24 a | 96 a | 2,2 V @ 15V, 15a | 380 µJ (EIN), 900 µJ (AUS) | 48 NC | - - - | |||||||||||||||||||||||||
![]() | 2SC5200Rtu | 2.1300 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -50 ° C ~ 150 ° C (TJ) | K. Loch | To-264-3, to-264aa | 150 w | To-264-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 250 V | 17 a | 5 µA (ICBO) | Npn | 3v @ 800 mA, 8a | 55 @ 7a, 5v | 30 MHz | ||||||||||||||||||||||||||||||
![]() | MMBF4119 | - - - | ![]() | 9163 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 225 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | N-Kanal | 3PF @ 10V | 40 v | 200 µa @ 10 V | 2 V @ 1 na | ||||||||||||||||||||||||||||||||
![]() | IRFR9110TF | 0,3200 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | Dpak | Herunterladen | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 2.000 | P-Kanal | 100 v | 3.1a (TC) | 10V | 1,2OHM @ 1,9a, 10 V. | 4v @ 250 ähm | 8.7 NC @ 10 V. | ± 20 V | 290 PF @ 25 V. | - - - | 25W (TC) | ||||||||||||||||||||||||||
![]() | Fdme430nt | 0,2200 | ![]() | 34 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-Powerufdfn | MOSFET (Metalloxid) | Mikrofet 1,6x1.6 Dünn | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 5.000 | N-Kanal | 30 v | 6a (ta) | 40mohm @ 6a, 4,5 V. | 1,5 V @ 250 ähm | 9 NC @ 4,5 V. | ± 12 V | 760 PF @ 15 V | - - - | 700 MW (TA) | |||||||||||||||||||||||||||
![]() | FDB9403 | 2.3100 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDB940 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 800 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | Fjv3101rlimtf | 0,0200 | ![]() | 192 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 3.000 | ||||||||||||||||||||||||||||||||||||||||||
![]() | HUF75637S3 | 1,5000 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | HUF75637 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | Fjy4002r | 0,0500 | ![]() | 860 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | Oberflächenhalterung | SC-89, SOT-490 | Fjy400 | 200 MW | SOT-523F | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 3.000 | 50 v | 100 ma | 100NA (ICBO) | PNP - VoreInensmen | 300 mV @ 500 µA, 10 mA | 30 @ 5ma, 5v | 200 MHz | 10 Kohms | 10 Kohms | ||||||||||||||||||||||||||||
![]() | FDPF035N06B | 1.1400 | ![]() | 178 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | FDPF035 | - - - | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8542.39.0001 | 1 | - - - | |||||||||||||||||||||||||||||||||||||||
![]() | Fqpf2n80ydtu | 1.1400 | ![]() | 725 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Vollpackung, Geformete-Leads | MOSFET (Metalloxid) | To-220F-3 (Y-Forming) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 800 V | 1,5a (TC) | 10V | 6.3OHM @ 750 mA, 10V | 5 V @ 250 ähm | 15 NC @ 10 V | ± 30 v | 550 PF @ 25 V. | - - - | 35W (TC) | |||||||||||||||||||||||||||||
![]() | TIP49 | 0,4500 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 40 w | To-220-3 | Herunterladen | Ear99 | 8541.29.0095 | 1 | 350 V | 1 a | 1ma | Npn | 1v @ 200 Ma, 1a | 30 @ 300 mA, 10V | 10 MHz | |||||||||||||||||||||||||||||||||
![]() | FDS6298 | 0,5200 | ![]() | 265 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Soic (0,154 ", 3,90 mm Breit) | MOSFET (Metalloxid) | 8-soic | Herunterladen | Ear99 | 8542.39.0001 | 574 | N-Kanal | 30 v | 13a (ta) | 4,5 V, 10 V. | 9mohm @ 13a, 10V | 3v @ 250 ähm | 14 NC @ 5 V | ± 20 V | 1108 PF @ 15 V | - - - | 3W (TA) | |||||||||||||||||||||||||||||
![]() | HUF75345p3_NS2552 | 1.0000 | ![]() | 4961 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||||
![]() | BC547CBU | 0,0400 | ![]() | 10 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0075 | 8,266 | 45 V | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | |||||||||||||||||||||||||||||||||
![]() | FDC6310p | - - - | ![]() | 9172 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-23-6 Dünn, TSOT-23-6 | FDC6310 | MOSFET (Metalloxid) | 700 MW | Supersot ™ -6 | Herunterladen | Ear99 | 8542.39.0001 | 1 | 2 p-kanal (dual) | 20V | 2.2a | 125mohm @ 2,2a, 4,5 V. | 1,5 V @ 250 ähm | 5.2nc @ 4.5V | 337PF @ 10V | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | FCP260N60E | 1.6600 | ![]() | 200 | 0.00000000 | Fairchild Semiconductor | Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 200 | N-Kanal | 600 V | 15a (TC) | 10V | 260 MOHM @ 7,5A, 10V | 3,5 V @ 250 ähm | 62 NC @ 10 V | ± 20 V | 2500 PF @ 25 V | - - - | 156W (TC) | |||||||||||||||||||||||||||||
![]() | J105 | - - - | ![]() | 9982 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | Ear99 | 8541.21.0095 | 1 | N-Kanal | - - - | 25 v | 500 mA @ 15 V | 4,5 V @ 1 µA | 3 Ohm | ||||||||||||||||||||||||||||||||||
![]() | FCH76N60N | 15.1300 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | MOSFET (Metalloxid) | To-247 | Herunterladen | Ear99 | 8541.29.0095 | 20 | N-Kanal | 600 V | 76a (TC) | 10V | 36mohm @ 38a, 10V | 4v @ 250 ähm | 285 NC @ 10 V | ± 30 v | 12385 PF @ 100 V | - - - | 543W (TC) | |||||||||||||||||||||||||||||
![]() | 2N7002va | 0,2800 | ![]() | 12 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | SOT-563, SOT-666 | 2N7002 | MOSFET (Metalloxid) | 250 MW | SOT-563F | Herunterladen | Ear99 | 8541.21.0095 | 1.078 | 2 n-kanal (dual) | 60 v | 280 Ma | 7.5OHM @ 50 Ma, 5V | 2,5 V @ 250 ähm | - - - | 50pf @ 25v | Logikpegel -tor | ||||||||||||||||||||||||||||||
![]() | FDP3632 | - - - | ![]() | 3103 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 12a (TA), 80A (TC) | 6 V, 10V | 9mohm @ 80a, 10V | 4v @ 250 ähm | 110 nc @ 10 v | ± 20 V | 6000 PF @ 25 V. | - - - | 310W (TC) | |||||||||||||||||||||||||||||
![]() | MMBF4093 | - - - | ![]() | 2715 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.21.0095 | 1 | N-Kanal | 16PF @ 20V | 40 v | 8 ma @ 20 v | 1 V @ 1 na | 80 Ohm | |||||||||||||||||||||||||||||||
![]() | FQA9P25 | - - - | ![]() | 5041 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | - - - | 0000.00.0000 | 1 | P-Kanal | 250 V | 10.5a (TC) | 10V | 620MOHM @ 5.25A, 10V | 5 V @ 250 ähm | 38 nc @ 10 v | ± 30 v | 1180 PF @ 25 V. | - - - | 150W (TC) | ||||||||||||||||||||||||||||||
![]() | FDMC8015L | 0,4100 | ![]() | 1325 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 40 v | 7a (ta), 18a (TC) | 4,5 V, 10 V. | 26mohm @ 7a, 10V | 3v @ 250 ähm | 19 NC @ 10 V | ± 20 V | 945 PF @ 20 V | - - - | 2,3 W (TA), 24 W (TC) | |||||||||||||||||||||||||||||
![]() | FGPF30N30 | 0,8500 | ![]() | 2 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | Standard | 46 w | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1 | - - - | - - - | 300 V | 80 a | 1,5 V @ 15V, 10a | - - - | 39 NC | - - - | ||||||||||||||||||||||||||||||
![]() | MPS6514 | 1.0000 | ![]() | 4526 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 625 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 25 v | 200 ma | 50na (ICBO) | Npn | 500mv @ 5ma, 50 mA | 150 @ 2MA, 10V | - - - | ||||||||||||||||||||||||||||||||
![]() | FGH75N60SFTU | - - - | ![]() | 1451 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-247-3 | Standard | 452 w | To-247 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | 400 V, 75A, 3OHM, 15 V. | Feldstopp | 600 V | 150 a | 225 a | 2,9 V @ 15V, 75A | 2,7MJ (EIN), 1MJ (AUS) | 250 NC | 26ns/138ns | |||||||||||||||||||||||||||||
![]() | HUF75344S3ST | 0,6700 | ![]() | 41 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Schüttgut | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 800 | N-Kanal | 55 v | 75a (TC) | 10V | 8mohm @ 75a, 10V | 4v @ 250 ähm | 210 NC @ 20 V | ± 20 V | 3200 PF @ 25 V. | - - - | 285W (TC) |
Täglich durchschnittliches RFQ -Volumen
Standardprodukteinheit
Weltweite Hersteller
Lagerlager