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Bild | Produktnummer | Bestandteil (USD) | Menge | ECAD | Menge Verfügbar | Gewicht (kg) | Mfr | Serie | Paket | Produktstatus | Biebstemperatur | Montagetyp | Paket / Herbst | Grundproduktnummer | Technologie | Kraft - Max | LEEFERANTENGERATEPAKET | Datenblatt | ROHS -STATUS | FeuchtigitesempfindlichKeit (MSL) | Status Erreichen | Eccn | Htsus | Standardpaket | FET -Typ | ABTROPFEN SIE ZUR Quellspannung (VDSS) | Strom - Kontinuierlicher Abfluss (ID) @ 25 ° C | Antriebsspannung (Maximale RDS an, min rds an) | Rds on (max) @ id, vgs | Vgs (th) (max) @ id | Gate Ladung (qg) (max) @ vgs | VGS (max) | Eingangskapazität (CISS) (max) @ vds | FET -Fungion | Leistungsdissipation (max) | Spannung - Zusammenbruch des Sammlers Emitter (max) | Strom - Sammler (IC) (max) | Strom - Sammler Cutoff (max) | Transistortyp | VCE -Sättigung (max) @ ib, ic | Geilstromverstärkung (HFE) (min) @ ic, vce | Frequenz - übergang |
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![]() | IRFR220BTM | 0,1800 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 8541.29.0095 | 1.760 | N-Kanal | 200 v | 4.6a (TC) | 10V | 800 MOHM @ 2,3a, 10V | 4v @ 250 ähm | 16 NC @ 10 V | ± 30 v | 390 PF @ 25 V. | - - - | 2,5 W (TA), 40 W (TC) | ||||||||||
![]() | KSP06TA-FS | - - - | ![]() | 1406 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | Bis-226-3, Bis 92-3 (to-226aa), Leads | 625 MW | To-92-3 | - - - | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 1 | 80 v | 500 mA | 100na | Npn | 250mv @ 10 mA, 100 mA | 50 @ 100 mA, 1V | 100 MHz | ||||||||||||||
![]() | MJD340 | - - - | ![]() | 9109 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | -65 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 1,56 w | Dpak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | 300 V | 500 mA | 100 µA | Npn | - - - | 30 @ 50 Ma, 10 V | - - - | ||||||||||||||||
![]() | FDMC15N06 | - - - | ![]() | 1274 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-MLP (3,3x3,3) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 55 v | 2,4a (TA), 15a (TC) | 10V | 900mohm @ 15a, 10V | 4v @ 250 ähm | 11,5 NC @ 10 V. | ± 20 V | 350 PF @ 25 V. | - - - | 2,3 W (TA), 35 W (TC) | |||||||||||||
![]() | TIP115TU | 0,4500 | ![]() | 940 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | To-220-3 | 2 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | 60 v | 2 a | 2ma | PNP - Darlington | 2,5 V @ 8ma, 2a | 1000 @ 1a, 4V | - - - | ||||||||||||||||
![]() | FDMA8884 | 1.0000 | ![]() | 6776 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 6-WDFN Exponierte Pad | MOSFET (Metalloxid) | 6-microfet (2x2) | Herunterladen | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 6,5a (TA), 8a (TC) | 4,5 V, 10 V. | 23mohm @ 6.5a, 10V | 3v @ 250 ähm | 7,5 NC @ 10 V | ± 20 V | 450 PF @ 15 V | - - - | 1,9W (TA) | |||||||||||||
![]() | FQB44N10TM | 1.0000 | ![]() | 8553 | 0.00000000 | Fairchild Semiconductor | QFET® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D²pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 100 v | 43,5a (TC) | 10V | 39mohm @ 21.75a, 10V | 4v @ 250 ähm | 62 NC @ 10 V | ± 25 V | 1800 PF @ 25 V. | - - - | 3,75W (TA), 146W (TC) | |||||||||||||
![]() | FDMS0348 | 0,2100 | ![]() | 63 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powerwdfn | MOSFET (Metalloxid) | 8-mlp (5x6) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 30 v | 14A (TA), 35A (TC) | 4,5 V, 10 V. | 7mohm @ 14a, 10V | 3v @ 250 ähm | 26 NC @ 10 V | ± 20 V | 1590 PF @ 15 V | - - - | 2,5 W (TA), 50 W (TC) | |||||||||||||
![]() | HUF75329D3 | 0,6100 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | K. Loch | TO-251-3 Kurze Leads, ipak, to-251aaa | MOSFET (Metalloxid) | I-Pak | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.800 | N-Kanal | 55 v | 20A (TC) | 10V | 26mohm @ 20a, 10V | 4v @ 250 ähm | 65 NC @ 20 V | ± 20 V | 1060 PF @ 25 V. | - - - | 128W (TC) | ||||||||||||
![]() | FCPF260N65FL1 | 1.1400 | ![]() | 3 | 0.00000000 | Fairchild Semiconductor | FRFET®, Superfet® II | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 650 V | 15a (TC) | 10V | 260 MOHM @ 7,5A, 10V | 5v @ 1,5 mA | 60 nc @ 10 v | ± 20 V | 2340 PF @ 100 V | - - - | 36W (TC) | |||||||||||||
![]() | 2N7002t | - - - | ![]() | 2887 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | Oberflächenhalterung | SC-89, SOT-490 | 2N7002 | MOSFET (Metalloxid) | SOT-523F | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0095 | 3.000 | N-Kanal | 60 v | 115 Ma (TA) | 5v, 10V | 7.5OHM @ 50 Ma, 5V | 2v @ 250 ähm | ± 20 V | 50 PF @ 25 V. | - - - | 200 MW (TA) | ||||||||||||
![]() | FCPF36N60NT | 5.9800 | ![]() | 67 | 0.00000000 | Fairchild Semiconductor | Supremos ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 600 V | 36a (TC) | 10V | 90 Mohm @ 18a, 10V | 4v @ 250 ähm | 112 NC @ 10 V | ± 30 v | 4785 PF @ 100 V | - - - | - - - | |||||||||||||
![]() | KST43MTF | 0,0400 | ![]() | 6639 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-236-3, sc-59, SOT-23-3 | 350 MW | SOT-23-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 6.000 | 200 v | 500 mA | 100NA (ICBO) | Npn | 500 mv @ 2MA, 20 mA | 40 @ 30 ma, 10V | 50 MHz | ||||||||||||||
![]() | RFP8P10 | 0,2700 | ![]() | 29 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220ab | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | P-Kanal | 100 v | 8a (TC) | 10V | 400mohm @ 8a, 10V | 4v @ 250 ähm | ± 20 V | 1500 PF @ 25 V. | - - - | 75W (TC) | |||||||||||
![]() | KSA1156OSTU | - - - | ![]() | 6420 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Aktiv | 150 ° C (TJ) | K. Loch | To-225aa, to-126-3 | KSA1156 | 1 w | To-126-3 | Herunterladen | ROHS3 -KONFORM | 1 (unbegrenzt) | UnberÜHrt Ereichen | Ear99 | 0000.00.0000 | 162 | 400 V | 500 mA | 100 µA (ICBO) | PNP | 1v @ 10 mA, 100 mA | 60 @ 100 Ma, 5V | - - - | |||||||||||||
![]() | Fqi1p50TU | 1.0000 | ![]() | 6883 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-262-3 lange leitet, i²pak, to-262aaa | MOSFET (Metalloxid) | I2pak (to-262) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 1.000 | P-Kanal | 500 V | 1,5a (TC) | 10V | 10.5OHM @ 750 mA, 10V | 5 V @ 250 ähm | 14 NC @ 10 V | ± 30 v | 350 PF @ 25 V. | - - - | 3.13W (TA), 63W (TC) | ||||||||||||
![]() | HUFA76419S3S | 0,8300 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Ultrafet ™ | Rohr | Veraltet | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 400 | N-Kanal | 60 v | 29a (TC) | 4,5 V, 10 V. | 35mohm @ 29a, 10V | 3v @ 250 ähm | 28 NC @ 10 V | ± 16 v | 900 PF @ 25 V. | - - - | 75W (TC) | ||||||||||||
![]() | FDP4030L | 0,6800 | ![]() | 6 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -65 ° C ~ 175 ° C (TJ) | K. Loch | To-220-3 | MOSFET (Metalloxid) | To-220-3 | Herunterladen | Rohs Nick Konform | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.29.0095 | 1 | N-Kanal | 30 v | 20A (TC) | 10V | 55mohm @ 4,5a, 10V | 2v @ 250 ähm | 18 NC @ 10 V. | ± 20 V | 365 PF @ 15 V | - - - | 37,5W (TC) | ||||||||||
![]() | 2SD1619T-TD-E-FS | 0,1100 | ![]() | 46 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 1 (unbegrenzt) | Verkäfer undefiniert | Ear99 | 8541.21.0075 | 1.000 | ||||||||||||||||||||||||||
![]() | FQPF12N60T | 1.0500 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 Full Pack | MOSFET (Metalloxid) | To-220f-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 50 | N-Kanal | 600 V | 5.8a (TC) | 10V | 700 MOHM @ 2,9a, 10V | 5 V @ 250 ähm | 54 NC @ 10 V | ± 30 v | 1900 PF @ 25 V. | - - - | 55W (TC) | ||||||||||||
![]() | BDX33B | 0,5500 | ![]() | 1555 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | -65 ° C ~ 150 ° C (TJ) | K. Loch | To-220-3 | 70 w | To-220-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 407 | 80 v | 10 a | 500 ähm | NPN - Darlington | 2,5 V @ 6ma, 3a | 750 @ 3a, 3v | - - - | ||||||||||||||||
![]() | KSC5047TU | 0,5700 | ![]() | 1 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | 100 w | To-3pn | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 450 | 50 v | 15 a | 100 µA (ICBO) | Npn | 500mv @ 120 mA, 5a | 40 @ 5a, 5V | - - - | ||||||||||||||||
![]() | FQB25N33TM-F085 | 1.8900 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | Automobil, AEC-Q101 | Schüttgut | Veraltet | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | To-263-3, d²pak (2 Leitete + Tab), to-263ab | MOSFET (Metalloxid) | D2pak (to-263) | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 330 V | 25a (TC) | 10V | 230mohm @ 12.5a, 10V | 5 V @ 250 ähm | 75 NC @ 15 V | ± 30 v | 2010 PF @ 25 V | - - - | 3.1W (TA), 250 W (TC) | |||||||||||||
![]() | Fqa7n80 | 1.4200 | ![]() | 780 | 0.00000000 | Fairchild Semiconductor | QFET® | Rohr | Veraltet | -55 ° C ~ 150 ° C (TJ) | K. Loch | TO-3P-3, SC-65-3 | MOSFET (Metalloxid) | To-3p | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.29.0095 | 30 | N-Kanal | 800 V | 7.2a (TC) | 10V | 1,5OHM @ 3,6a, 10 V. | 5 V @ 250 ähm | 52 NC @ 10 V | ± 30 v | 1850 PF @ 25 V. | - - - | 198W (TC) | ||||||||||||
![]() | FDMC7570S | 1.4600 | ![]() | 4 | 0.00000000 | Fairchild Semiconductor | Powertrench®, SyncFet ™ | Schüttgut | Aktiv | -55 ° C ~ 150 ° C (TJ) | Oberflächenhalterung | 8-Powertdfn | MOSFET (Metalloxid) | Power33 | Herunterladen | Ear99 | 8542.39.0001 | 1 | N-Kanal | 25 v | 27a (TA), 40A (TC) | 4,5 V, 10 V. | 2mohm @ 27a, 10V | 3V @ 1ma | 68 NC @ 10 V. | ± 20 V | 4410 PF @ 13 V | - - - | 2,3 W (TA), 59W (TC) | |||||||||||||
![]() | BC548CBU | 0,0200 | ![]() | 5245 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 8.500 | 30 v | 100 ma | 15NA (ICBO) | Npn | 600mv @ 5ma, 100 mA | 420 @ 2MA, 5V | 300 MHz | ||||||||||||||||
![]() | MJD350 | 1.0000 | ![]() | 5452 | 0.00000000 | Fairchild Semiconductor | - - - | Rohr | Veraltet | - - - | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | 15 w | Dpak | Herunterladen | Rohs Nick Konform | Ear99 | 8541.29.0095 | 75 | 300 V | 500 mA | 100 µA | PNP | - - - | 30 @ 50 Ma, 10 V | - - - | ||||||||||||||||
![]() | FDN3401 | - - - | ![]() | 1526 | 0.00000000 | Fairchild Semiconductor | * | Schüttgut | Aktiv | - - - | Nicht Anwendbar | 3 (168 Stunden) | Verkäfer undefiniert | 3.000 | ||||||||||||||||||||||||||||
![]() | FDD8878 | 0,4900 | ![]() | 30 | 0.00000000 | Fairchild Semiconductor | Powertrench® | Schüttgut | Aktiv | -55 ° C ~ 175 ° C (TJ) | Oberflächenhalterung | To-252-3, dpak (2 Leitet + Tab), SC-63 | MOSFET (Metalloxid) | To-252, (d-pak) | Herunterladen | Ear99 | 8542.39.0001 | 611 | N-Kanal | 30 v | 11a (ta), 40a (TC) | 4,5 V, 10 V. | 15mohm @ 35a, 10V | 2,5 V @ 250 ähm | 26 NC @ 10 V | ± 20 V | 880 PF @ 15 V | - - - | 40W (TC) | |||||||||||||
![]() | BC307 | 0,0500 | ![]() | 8 | 0.00000000 | Fairchild Semiconductor | - - - | Schüttgut | Veraltet | 150 ° C (TJ) | K. Loch | To-226-3, bis 92-3 (to-226aa) | 500 MW | To-92-3 | Herunterladen | ROHS3 -KONFORM | Ear99 | 8541.21.0075 | 2.000 | 45 V | 100 ma | 15na | PNP | 500 mV @ 5ma, 100 mA | 120 @ 2MA, 5V | 130 MHz |
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